• Journal of the Korean Magnetics Society
• /
• v.10 no.5
• /
• pp.210-219
• /
• 2000

The magnetoresistance characteristics of FeN/Co/Cu/Co and FeN/Co/Cu/Co/Cu/Co/FeN multilayers using ferromagnetic iron-nitrides (FeN) has been studied. The microstructure of FeN film is the mixed ${\alpha}$-Fe and $\varepsilon$-Fe$_3$N phase on the condition that the flow rate of N$_2$ gas is over 0.4 sccm. The magnetoresistance effect is observed because of shape magnetic anisotropy induced by needle-shaped $\varepsilon$-Fe$_3$N phase. This magnetoresistance effect changes, because the degree that the shape magnetic anisotropy adheres to the adjacent Co pinned layer is varied according to the flow rate of N$_2$ gas and the thickness of FeN film. The best magnetoresistance effect is obtained on the condition that the thickness of Co free layer is 70 ${\AA}$ and the maximum MR ratio(%) value of 3.2% shows in the FeN(250 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/FeN(250 ${\AA}$) mutilayer film which is fabricated at the N, gas flow rate of 0.5 sccm and the FeN film thickness of 250 ${\AA}$. Four steps are observed in the magnetoresistance curve owing to this difference of coercive force, because respective magnetic layers in the multilayer possess different coercive forces. These effects observed in these mutilayer films can be expected to application to the memory device the same MRAM as can carry out simultaneously four signals.

• Journal of the Korean Magnetics Society
• /
• v.11 no.5
• /
• pp.211-216
• /
• 2001

Top synthetic spin valves wi th structure Ta/NiFe/CoFe/Cu/CoFe(Pl)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with SiO$_2$ of 1500 were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (Pl-P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the GMR properties and the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As thickness difference of pinned layer was decreased from +25 to -25 , MR ratio was decreased gradually. However, there was a dip zone indicating a big change of MR ratio around Pl = P2, which can be due to the large canting of pinned layers. The modified Neel model was suggested for the top synthetic spin valve to explain the interlayer coupling field according to the thickness change of ferromagnetic layers. The interlayer coupling field was decreased due to the magnetostatic coupling (orange peel coupling) as suggested by model. However, the interlayer coupling field was not explained at the dip zone by the modified Neel model. The deviation of modified Neel model at the dip zone could be due to the largely canting of the pinned layers as well, which depends on different thickness in synthetic antiferromagnetic structure.

• Journal of the Korean Magnetics Society
• /
• v.19 no.3
• /
• pp.85-88
• /
• 2009

Magnetic phases of polycrystalline $Ge_{1-x}Mn_x$ thin films were studied. The $Ge_{1-x}Mn_x$ thin films were grown at $400^{\circ}C$ by using a molecular beam epitaxy. The $Ge_{1-x}Mn_x$thin films were p-type and electrical resistivities were $4.0{\times}10^{-2}{\sim}1.5{\times}10^{-4}ohm-cm$. Based on the analysis of magnetic characteristics and microstructures, it was concluded that the ferromagnetic phase formed on the $Ge_{1-x}Mn_x/SiO_2$/Si(100) thin films was $Ge_3Mn_5$ phase which has about 310 K of Curie temperature. Moreover, the $Ge_{1-x}Mn_x$ thin film which had $Ge_3Mn_5$ phase showed the negative magnetoresistance to be about 9% at 20 K when the magnetic field of 9 T was applied.

• Progress in Superconductivity and Cryogenics
• /
• v.25 no.2
• /
• pp.10-13
• /
• 2023

High-T_C superconductivity (HTSC) has been the central issue in the field of condensed matter physics for decades. An essential part of the research on superconductivity is finding new exotic superconductors. It was recently suggested that Ir-substituted La_0.7Sr_0.3MnO₃ (LSMIO) is a new high-T_C superconductor. However, systematic studies to experimentally verify the superconductivity have not been done. Here, we report the growth processes of LSMIO thin films and their electrical transport properties. We observed a clear negative correlation between the intensity of the laser utilized for film deposition and the Curie temperature of the deposited film. We attributed this effect to the suppression of Sr concentration in the LSMIO films as the laser intensity increased. However, our LSMIO films show conventional ferromagnetism instead of HTSC. To realize the HTSC in LSMIO systems, further exploration of diverse compositions of LSMIO compounds is essential.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.20 no.8
• /
• pp.6-14
• /
• 2006

This paper is a study about a proper method of plasma generation to cleaning method and a high frequency power equipment circuit to generation of plasma that used cleaning of chamber for TFT-LCD PECVD. The high density plasma required for cleaning causes a possibility of high density plasma more than $1{\times}10^{11}[EA/cm^3]$. It apply a ferrite core of ferromagnetic body to a existing ICP form. In case of power transfer equipment on 400[kHz] high frequency to generation of plasma it makes certain a stable switching operation in condition of plasma through using a inverter form for general purpose HB. And it demonstrates the performance of power transfer equipment using methods of measurement which use a transformer of series combination the density of plasma and the rate of dissolution of $NF_3$ in condition of $A_r\;and\;NF_3$.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2003.06a
• /
• pp.60-61
• /
• 2003

Theoretical considerations on a giant magneto-impedance (GMI) effect in amorphous ribbons (i.e., thin films) have been made in terms of the expressions of effective permeability and impedance derived in the frame of classical electrodynamics and ferromagnetism. The dependence of GMI effect on the external do magnetic field (H$\_$ext/) and the frequency of alternating current are simulated and discussed in the knowledge of energy conversion consisting of the current energy loss, the ferromagnetic energy consumption, and the magnetic energy storage in the film. The obtained results are summarized as follow: (a) As frequency f< 20 ㎒, the real part of effective permeability (${\mu}$′) changes slightly. The peak of the ${\mu}$′curve always locates at H$\_$ext/=H$\_$ani/ - the anisotropy field. However, the peak value of ${\mu}$′ tends to increase with increasing frequency in the frequency range of 11-20 ㎒. (b) In the frequency range, f= 21-23 ㎒, a negative peak additionally appears. Meanwhile, both the positive and negative peak values rapidly increase with increasing frequency and their peak positions shift towards a high H$\_$ext/. (c) The positive peak value of ${\mu}$′ starts to decrease at f= 29 ㎒ and its negative peak does so at about 35 ㎒. Then, both peaks keep such a tendency and their peak positions move to high H$\_$ext/, as increasing frequency. (d) The dependence of the imaginary part of effective permeability (${\mu}$") on the external dc magnetic field and the frequency of the alternating field indicates that there is only one peak involved in ${\mu}$" for the whole frequency range. (e) The impedance vs. magnetic field curves at various frequencies show that there is a critical value of frequency around f= 18-19 ㎒ where the transition between two frequency regimes occurs; the one (low frequency) in which ${\mu}$′ predominantly contributes to the GMI effect and the other (high frequency) in which ${\mu}$" determines the GMI effect.

• Journal of the Korean Magnetics Society
• /
• v.25 no.2
• /
• pp.43-46
• /
• 2015

$Si(100){\backslash}200nm$ $SiO_2{\backslash}5nm$ $Ta{\backslash}5nm$ $MgO{\backslash}35nm$ $Fe_3O_4$ multi-layers were prepared by using RF-sputtering and ultra-high vacuum molecular beam epitaxy (UHV-MBE) techniques. After post-annealing the multi-layers at $500^{\circ}C$ for 1 hour under the high vacuum of ${\sim}1{\times}10^{-6}Torr$, we observed ferromagnetic properties at room temperature as well as the Verwey transition which is the typical features of magnetite crystals formed. We have carried out a comparative study of the effect of Ta buffered layer on the crystallinity and magnetic properties of $Fe_3O_4$ thin films prepared under different growth and annealing conditions.

• Journal of the Microelectronics and Packaging Society
• /
• v.8 no.4
• /
• pp.17-23
• /
• 2001

The 3-D Hall sensor has two horizontal magnetic field sensing parts ($\chi$, y components) and one vertical magnetic field sensing part (z component). For conventional, 3-D Hall sensor it is general that the sensitivity for $B_{z}$ is about 1/10 compared with those for $B_\chi$ or $B_y$. Therefore, in this work, we proposed 3-D Hall sensor with new structure. We have increased the sensitivity about 6 times to form the trench using anisotropic etching. And we have increased the sensitivity for the $B_z$ by 80% compared with those of $B_\chi$ and$B_y$ using deposition of the ferromagnetic thin films on the bottom surface of the wafer to concentrate the magnetic fluxes. When the input current was 3 mA, sensitivities of the fabricated sensor with Ni/Fe film for $B_\chi, B_y$ and $B_{z}$ were measured as 120.1 mV/T, 111.7 mV/T, 95.3 mV/T, respectively. The measured linearity of the sensor was within $\pm$3% of error.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.408-408
• /
• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• Journal of the Korean Magnetics Society
• /
• v.5 no.1
• /
• pp.48-53
• /
• 1995

The structure, magnetic properties and magnetoresistance phenorrena of Ag-Co nano-granular alloy films prepared by a thermal co-evaporation were studied. Supersaturated fee Ag-Co solid solution and fee Co clusters coexisted in the as-deposited state. As Co content increases from 20 to 55 at.% Co, the grain size of the Ag matrix decreases from 147 to $67{\AA}$, and the Co solubility in the Ag matrix increases from 2.5 to 6.7%. Ag-Co alloy films having composition below 25 at.% Co showed mainly superparamagnetic behavior and above that composition, they showed both paramagnetic and ferromagnetic l::ehavior in the as-deposited state. The maximum magnetoresistance of 19% at R. T. and 10 kOe was obtained in the as-deposited 30 at.% Co alloy film. Heat treatment did not improve the MR ratio tecause most of the Co was already precipitated in the as-deposited state.