• 한국전기전자재료학회논문지
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• 제36권1호
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• pp.88-92
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• 2023

The ferroelectricity in Hf_0.5Zr_0.5O₂ (HZO) thin films is one of the most interesting topics for next-generation nonvolatile memory applications. It is known that a crystallization process is required at a temperature of 400℃ or higher to form an orthorhombic phase that results in the ferroelectric properties of the HZO film. However, to realize the integration of ferroelectric HZO films in the back-end-of-line, it is necessary to reduce the annealing temperature below 400℃. This study aims to comprehensively analyze the ferroelectric properties according to the annealing temperature (350-500℃) and time (1-5 h) using a furnace as a crystallization method for HZO films. As a result, the ferroelectric behaviors of the HZO films were achieved at a temperature of 400℃ or higher regardless of the annealing time. At the annealing temperature of 350℃, the ferroelectric properties appeared only when the annealing time was sufficiently increased (4 h or more). Based on these results, it was experimentally confirmed that the optimization of the annealing temperature and time is very important for the ferroelectric phase crystallization of HZO films and the improvement of their ferroelectric properties.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.361-361
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• 2012

PZT (Pb(Zr,Ti)O3) thin films have been used widely in the MEMS application, due to their inherent ferroelectric and piezoelectric properties. Such ferroelectricity induces much higher dielectric constants compared to those of the nonperovskite materials. In this work, the PZT thin films were deposited onto Indium-Tin-oxide (ITO) substrates through the spin-coating of PZT sols. The deposited PZT thin films were characterized in terms of the electrical and optical properties with special emphases on conductivity and optical constants. The detailed analysis techniques incorporate the dc-based current-voltage characteristics for the electrical properties, spectroscopic ellipsometry for optical characterization, atomic force microscopy for surface morphology, X-ray Photoelectron Spectroscopy for chemical bonding, Energy-dispersive X-ray Spectrometry for chemical analyses and X-ray diffraction for crystallinity. The ferroelectric phenomena were confirmed using capacitance-voltage measurements. The integrated physical/chemical features are attempted towards energy-oriented applications applicable to next-generation high-efficiency power generation systems.

• 한국재료학회지
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• 제10권5호
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• pp.350-353
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• 2000

강유전성 액정 분자 배향을 위해 열방성 고분자 액정물질을 배향막으로 사용하고 그표면 morphology를 AFM(Atomic Forced Microscope)으로 관찰한 결과 잘 배향된 sample cell에서도 microgroove 구조가 나타나지 않았음을 관찰하였다. 잘 배향된 sample cell 23:1의 contrast ratio를 보이면서 memory 효과를 나타내었다. 또한 20V의 AC field로 안정화시키자 전형적인 stripe-shaped 무늬가 나타났다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.174-174
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• 2003

Highly (111)-oriented PZT [Pb(Zrl-xTix)O3] thin films in the Zr-rich rhombohedral phase-field were successfully fabricated on Pt(111)/Ti/SiO2/Si substrates by combining PLD method with sol-gel process. These highly (111)-oriented films can be used as model systems for polarized Raman scattering study of PZT in the rhombohedral-Phase field because the (111)-direction is the principal off-center axis of the rhombohedral ferroelectricity. For this purpose, we have fabricated PZT films employing two distinctive compositions : one with Zr/Ti = 90/10 (abbreviated as PZT90/10) and the other with Zr/Ti= 60/40 (PZT60/40). The PZT90/10 film belongs to the octahedrally distorted FR(LT) phase with a cell-doubled structure, whereas the PZT60/40 is in the high-temperature FR(HT) phase-field at room temperature. To clearly separate E(TO) phonon modes from Al(TO) modes of the (111)-oriented rhombohedral film, we have suitably devised Z(X,Y)Z and Z(X,X)Z backscattering geometries for E(TO) and Al (TO), respectively. The polarized scattering experiment demonstrated that both types of (111)-oriented rhombohedral films closely followed the Raman selection rule.

• 한국자기공명학회논문지
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• 제20권1호
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• pp.1-6
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• 2016

The proton NMR line widths and spin-lattice relaxation rates, $T_1^{-1}$, of ferroelectric $LiH_3(SeO_3)_2$, $Li_2SO_4{\cdot}H_2O$, and $LiN_2H_5SO_4$ single crystals were measured as a function of temperature. The line width measurements reveal rigid lattice behavior of all the crystals at low temperatures and line narrowing due to molecular motion at higher temperatures. The temperature dependences of the proton $T_1^{-1}$ for these crystals exhibit maxima, which are attributed to the effects of molecular motion by the Bloembergen - Purcell - Pound theory. The activation energies for the molecular motions of $^1H$ in these crystals were obtained. From these analysis, $^1H$ in $LiH_3(SeO_3)_2$ undergoes molecular motion more easily than $^1H$ in $LiN_2H_5SO_4$ and $Li_2SO_4{\cdot}H_2O$ crystals.

• Transactions on Electrical and Electronic Materials
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• 제15권2호
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• pp.60-65
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• 2014

This article explains the experimental results of ferroelectric polarization switching (FPS) of potassium nitrate ($KNO_3$) with different polymers such as polyvinylidene fluoride (PVDF) and polyvinyl fluoride (PVF) using simple melt-press techniques. To analyze the ferroelectric polarization switching in potassium nitrate ($KNO_3$) composite films at room temperature, we applied the Ishibashi and Takagi theory (based on Avrami model) to the switching current transient. To investigate the dimensionality of domain growth, the ferroelectric polarization switching current (FPS current) was observed from the square - wave bipolar signals across a resistance of $0.1k{\Omega}$ in series with the composite films. The existence of a switching current transient pulse confirmed the ferroelectricity and indicated the stability of the ferroelectric phase (phase III) of $KNO_3$ at room temperature. Polarization hysteresis (P-E) characteristics supported the prominent features of ferroelectric polarization switching in the composite films at room temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.668-671
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• 2001

The Sr$\_$0.8/Si$\_$2.4/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. With increasing post-annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], Bi-layered perovskite phase was crystallized above 650[$^{\circ}C$]. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}$C/$\textrm{cm}^2$], 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of 750[$^{\circ}C$] is 1.01${\times}$10$\^$-8/ A/$\textrm{cm}^2$ at 100[kV/cm]. The fatigue characteristics of SBT thin films did not change up to 10$\^$10/ switching cycles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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• pp.5-8
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_{2}O_{9}(SBT)$ thin films are deposited on Pt-coated electrode$(Pt/TiO_{2}/SiO_{2}/Si)$ using RF magnetron sputtering method. With increasing annealing tempera ture from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The dielectric constant is 213 at annealing temperature of $750[^{\circ}C]$ and dielectric loss have a stable value within 0.1. Leakage current density is $1.01{\times}10^{-8} A/cm^{2}$ at annealing temperature of $750[^{\circ}C]$ The fatigue characteristics of SBT thin films did not change up to $10^{10}$ switching cycles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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• pp.9-12
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)$ thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using RF magnetron sputtering method. With increasing post-annealing temperature from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}C/cm^{2}$] 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of $750[^{\circ}C]$ is $1.01{\times}10^{-8}A/cm^2$ at 100[kV/cm]

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.387-391
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• 2004

[ $(Bi_{1/2}Na_{1/2})TiO_3$ ](BNT) is considered to be an excellent candidate for the key material of lead-free piezoelectric ceramic due to properties of strong ferroelectricity with a relatively large remanent polarization $Pr=38{\mu}C/cm^2$, and a large coercive field, Ec=73KV/cm. In this study, electrical properties of pressure sensor using a $0.96Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3+0.04SrTiO_3+0.2wt%La_2O_3$ ceramics are investigated. Resonant frequency of pressure sensor was decreased with increasing pressure. However, its anti-resonant frequency was increased with increasing pressure.