• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.297-300
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• 2012

Lead-free (1-x)$(Na_{0.5}K_{0.5})NbO_3-xLiNbO_3$, i.e., NKN-LNx (x=0.0, 0.1, 0.2, 0.3, 0.4 mol) was prepared using the conventional solid state reaction method. The effects of LN mixing on the ferroelectric properties of NKN-LNx ceramics were studied using a dielectric constant and P-E (Polarization-electric field) measurements. Ferroelectricity was observed in the composition for x approximately varying between 0.0 and 0.4. Minimum remanent polarization $2P_r=5C/cm^2$ was achieved in the composition for x = 0.2. The ferroelectric phase transition temperature $T_C$ increased with increasing LN content. The ferroelectric phase transition of NKN-LNx ($x{\geq}0.1$) is a second-order phase transition, and that of NKN-LNx ($x{\leq}0.2$) is a first-order phase transition. These results indicate that the ferroelectric phase transition temperature of NKN-LNx change from that of second-order to weak first-order phase transition according to the LN content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.541-545
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• 1998

(PZT, PST, PT)/ YBCO structured have been grown on single crystal $LaAlO_3$ using in-situ Nb:YAG pulsed laser deposition technique. The optimum conditions of fabrication for high quality films have been established under various oxygen pressure. TBCO was used as a metallic electrode for polarizing ferroelectric thin fillms. Lattice mismatch of these materials were found to be with in 3%. As a result XRD patterns and rocking curves, (PZT, PST, PT)/ YBCO multiayered thin films on $LaAlO_3$ substrates showed preferred orientation to c-axis. For invastigation on electrical properties of ferroelectric thin films, remanent polaiztion $P_r$ and coercive field $E_c$ were measured for three samples. At each optimum condition, they showed the values of P_r=60 \mu C/cm^2 and E_c=240kV/ cm for PT, 30\mu C/cm^2 and 105kV/cm for PZT, 1.5\mu C/cm^2$ and 15kV/cm for PST. Frequency dependence of dielectric properties of ferroelectric thin fillms was also investigated. As a result, it showed the frequency dependence was relatively small in the range of 10Hz~10kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.290-291
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• 2006

The effect of praseodymium substitution on the ferroelectric properties of $Bi_4Ti_3O_{12}$ thin films have been investigated. Ferroelectric Pr-substituted $Bi_4Ti_3O_{12}$ thin films were fabricated by chemical solution deposition onto Pt/Ti/$SiO_2$/Si substrates. The structure and morphology of the films were analyzed using Xray diffraction, and scanning electron microscopy, respectively. About 200-nm-thick BPT films grown at $720^{\circ}C$ exhibited a polycrystalline structure and showed excellent ferroelectric properties with a remanent polarization ($2P_r$) of $28.21\;{\mu}C/cm^2$ at an applied voltage of 5 V. The films a1so demonstrate fatigue-free behavior up to $10^{11}$ read/write switching cycles with 1 MHz bipolar pulses at an electric field of ${\pm}5\;V$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.88-92
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• 2023

The ferroelectricity in Hf_0.5Zr_0.5O₂ (HZO) thin films is one of the most interesting topics for next-generation nonvolatile memory applications. It is known that a crystallization process is required at a temperature of 400℃ or higher to form an orthorhombic phase that results in the ferroelectric properties of the HZO film. However, to realize the integration of ferroelectric HZO films in the back-end-of-line, it is necessary to reduce the annealing temperature below 400℃. This study aims to comprehensively analyze the ferroelectric properties according to the annealing temperature (350-500℃) and time (1-5 h) using a furnace as a crystallization method for HZO films. As a result, the ferroelectric behaviors of the HZO films were achieved at a temperature of 400℃ or higher regardless of the annealing time. At the annealing temperature of 350℃, the ferroelectric properties appeared only when the annealing time was sufficiently increased (4 h or more). Based on these results, it was experimentally confirmed that the optimization of the annealing temperature and time is very important for the ferroelectric phase crystallization of HZO films and the improvement of their ferroelectric properties.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.72-72
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.39.2-39
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.40.4-40
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• 1998

• Journal of the Korean Ceramic Society
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• v.49 no.3
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• pp.266-271
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• 2012

The effect of $Bi(Mg_{1/2}Sn_{1/2})O_3$ (BMS) modification on the crystal structure, ferroelectric and piezoelectric properties of $Bi_{1/2}(Na_{0.8}K_{0.2})_{1/2}TiO_3$ (BNKT) ceramics has been investigated. The BMS-substitution induced a transition from a ferroelectric (FE) tetragonal to a nonpolar pseudocubic phase, leading to degradations in the remnant polarization, coercive field, and piezoelectric coefficient $d_{33}$. However, the electric-field-induced strain was significantly enhanced by the BMS substitution-induced phase transition and reached a highest value of $S_{max}/E_{max}$ = 633 pm/V under an applied electric field of 6 kV/mm when the BMS content reached 6 mol%. The abnormal enhancement in strain was attributed to the field-induced transition of the pseudocubic symmetry to other asymmetrical structure, which was not clarified in this work.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.764-768
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• 2016

To investigate excess $Na^+$ effect, $Bi_{0.5}(Na_{0.78+x}K_{0.22})_{0.5}TiO_3$ ($0{\leq}x{\leq}0.05$) (BNKT) ceramics were prepared by using a conventional solid-state reaction method. The structure and ferroelectric properties of BNKT ceramics were characterized by XRD (X-ray diffraction) and polarization dependence by external electric field. Also, the temperature dependence of dielectric constant and loss were studied. From these results, it was found that appropriate excess $Na^+$ into BNKT ceramics compensate the volatility and induce dense ceramics. The enhanced piezoelectric coefficient (158 pC/N) and depolarization temperature ($202^{\circ}C$) were obtained for the x=0.01 composition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.445-451
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• 2022

Ultrasonic sensor is suitable as a next-generation autonomous driving assist device because its lower price compared to that of other sensors and its sensing stability in the external environment. Although Pb(Zr, Ti)O₃ (PZT)-relaxor ferroelectric system has excellent piezoelectric properties, the change in capacitance is large in the daily operating temperature range due to the low phase transition temperature. Recently, many studies have been conducted to improve the temperature stability of ferroelectric ceramics by controlling the grain size and crystal structure, so it is necessary to study the effect of the grain size on the piezoelectric properties and the temperature stability of PZT-relaxor ferroelectric system. In this study, the piezoelectric properties, phase transition temperature, and temperature coefficient of capacitance (TCC) of 0.9 Pb(Zr_1-xTi_x)O₃-0.1 Pb(Zn_1/3Nb_2/3)O₃ (PZT_x-PZN) ceramics with various grain sizes were investigated. PZT_x-PZN ceramics with larger grain size showed higher piezoelectric properties and temperature stability, and are expected to be suitable for ultrasonic devices in the future.