• 제목/요약/키워드: ferrite films

검색결과 89건 처리시간 0.041초

Preparation of$Ni_xFe_{3-x}O_4$ Films by the Ferrite Plating and Their Magnetic Properties (페라이트 도금법에 의한 $Ni_xFe_{3-x}O_4$ 박막의 제조와 자기적 성질)

  • 하태욱;이정식;김일원
    • Journal of the Korean Magnetics Society
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    • 제8권5호
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    • pp.295-299
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    • 1998
  • The magnetic thin films can be prepared without vacuum process and under the low temperature(<100 $^{\circ}C$) by ferrite plating. We have performed ferrite plating of $Ni_xFe_{3-x}O_4$ (x=0.162~0.138) films on cover glass at the substrate temperature 80 $^{\circ}C$ and pH range of the oxidizing solution, 7.1~8.8. the crystal structure of the samples has been identified as a single phase of polycrystal spinel structure by x-ray diffraction technique. The deposition rate and the grain size of the film increased with the pH of oxidizing solution. The coercive force (H_C)$ decreased with the pH of oxidizing solution.

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Characteristics in the Deposition of Mn-Zn Ferrite Thin Films by Ion Beam Sputtering Using a Single Ion Source (단일 이온원을 사용하는 이온빔 스퍼터링법에 의한 Mn-Zn 페라이트 박막의 증착 기구)

  • Jo, Hae-Seok;Ha, Sang-Gi;Lee, Dae-Hyeong;Hong, Seok-Gyeong;Yang, Gi-Deok;Kim, Hyeong-Jun;Kim, Gyeong-Yong;Yu, Byeong-Du
    • Korean Journal of Materials Research
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    • 제5권2호
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    • pp.239-245
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    • 1995
  • Mn-Zn ferrite thin films were deposited on $SiO_2(1000 \AA)/Si(100)$ by ion beam sputtering using a single ion source. A mosaic target consisting of a single crystal(ll0) Mn-Zn ferrite with a Fe metal strip on it was used. As-deposited films without oxygen gas flow have a wiistite structure due to oxygen deficiencies, which originated from the extra metal atoms sputtered from the metal strips during deposition. The as-deposited films with oxygen gas flow, however, have a spinel structure with (111) preferred orientation. The crystallization of thin films was maximized at the ion beam extraction voltage of 2.lkV, at which the deposited films are bombarded appropriately by the energetic secondary ions reflected from the target. As the extraction voltage increased or decreased from the optimum value, the crystallinity of thin films becomes poor owing to a weak and severe bombardment of the secondary ions, respectively. Crystallization due to the bombardment of the secondary ions was also maximized at the beam incidence angle of $55^{\circ}$. The as-deposited ferrite thin films with a spinel structure showed ferrimagnetism and had an in-plane magnetization easy axis.

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The Manufacturing and Properties of Spinel Ferrite Film In Aqueous Solution (수용액에서의 스피넬형 자성박막의 제작과 그 특성)

  • Kim, M.H.;Jang, K.U.;Choi, M.K.
    • Proceedings of the KIEE Conference
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    • 대한전기학회 1999년도 추계학술대회 논문집 전문대학교육위원 P
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    • pp.4-6
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    • 1999
  • We have performed spin-spray ferrite plating of $Fe_{3-x}Zn_xO_4$($X=0.47{\sim}0.97$) films in the temperature region T=85[$^{\circ}C$]. A reaction solution and an oxidizing solution were supplied to a reaction chamber by supply pumps. The Zn composition X in the $Fe_{3-x}Zn_xO_4$ Film increases as the content of $ZnCl_2$ increase, from X=0.47 at O.05[g/l] to X=0.97 at 0.15[g/l]. All the films are polycrystalline with no preferential orientation, and the magnetization exhibits no definite anisotropy. Grain size in the films increases as X increases, reaching 0.98[${\mu}m$] at X=0.97.

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Magnetic Properties of Fe3-x MnxO4 Thin Films by FMR

  • Kim, Ki-Hyeon;Kim, Young-Ho;Ha, Tae-Wook;Lee, Jeong-Sik;Park, Mann-Jang
    • Journal of Magnetics
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    • 제2권2호
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    • pp.38-41
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    • 1997
  • Spinel ferrite thin films Fe3-x MnxO4 (x=0.000, 0.006, 0.0010, 0.015, 0.023) were prepared on the coverglass by ferrite plating technique. To investigate the uniaxial anisotrpy of the samples, the saturation and effective magnetization of the thin films were measured by VSM(vibrating sample magnetometer) and FMR(ferromagnetic resonance) measurements respectively. The spectroscopic splitting g factor were estimated from the ferromagnetic resonance curves. For x=0.000, 0.006, the effective magnetization was measured of temperatures form T=77 K to T=300 K. The results were analyzed in terms of Bloch's law Ms(T) = Ms(0) (1-BT3/2-CT5/2). The Bloch coefficient B, C were determined by fitting. Ms(0) was obtained by extrapolating Meff to 0 K. From this result, the spin wave stiffness constants D was also determined.

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The Role of (111)MgO Underlayer in Growth of c-axis Oriented Barium Ferrite Films

  • Erickson, D.W.;Hong, Y.K.;Gee, S.H.;Tanaka, T.;Park, M.H.;Nam, I.T.
    • Journal of Magnetics
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    • 제9권4호
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    • pp.116-120
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    • 2004
  • Hexagonal barium-ferrite ($BaFe_{12}O_{19}$, magnetoplumbite structure; BaM) film with perpendicularly c-axis orientation was successfully deposited on (100) silicon substrates with an MgO (111) underlayer by rf diode sputtering and in-situ heating at $920^{\circ}C$. The magnetic and structural properties of 0.27 ${\mu}m$ thick BaM films on MgO (111) underlayers were compared to films of the same thickness deposited onto single-crystal MgO (111) and c-plane ($000{\ell}$) sapphire ($Al_2O_3$) substrates by vibrating sample magnetometry (VSM), x-ray diffractometer (XRD), and atomic force microscopy (AFM). The thickness dependence of MgO (111) underlayers on silicon wafer was found to have a large effect on both magnetic and structural properties of the BaM film. The thickness of 15 nm MgO (111) underlayers produced BaM films with almost identical magnetic and structural properties as the single-crystal substrates; this can be explained by the lower surface roughness for thinner underlayer thicknesses. The magnetization saturation ($M_s$) and the ratio $H_{cII}/H_{c{\bot}}$ for the BaM film with a 15 nm MgO (111) underlayer is 217 emu/cc and 0.24, respectively. This is similar to the results for the BaM films deposited on the single-crystal MgO (111) and sapphire substrates of 197 emu/cc and 0.10, 200 emu/cc and 0.12, respectively. Therefore, the proposed MgO (111) underlayer can be used in many applications to promote c-axis orientation without the cost of expensive substrates.

Influences of Oxygen Partial Pressure and Annealing Time on Microstructure and Magnetic Properties of Hexagonal Barium-Ferrite Thin Films (Hexagonal Barium-Ferrite 박막의 미세구조와 자기적 특성에 미치는 산소분압과 열처리 시간의 영향)

  • 김웅수;김동현;남인탁;홍양기
    • Journal of the Korean Magnetics Society
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    • 제10권6호
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    • pp.285-290
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    • 2000
  • BaM thin films were prepared by using RF magnetron sputtering system at room temperature, and then successively annealed to crystallize at 850$\^{C}$ using RTA. The structure and magnetic properties of post-annealed BaM films have been investigated using XRD and VSM, respectively. The dependences of partial oxygen gas pressure (Po2) on the characteristics of BaM films were investigated. Although mixing of spinel and BaM phase only was identified in 0.5 mTorr oxygen partial pressure, BaM phase only was identified in the range from 1 to 3 mTorr oxygen partial pressure. The saturation magnetization and perpendicular coercivity of BaM thin films decreases with increase of Po2 in the range of Pot between 0.5 and 3 mTorr.

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