• Journal of Power Electronics
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• 제7권2호
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• pp.146-158
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• 2007

A multi-pulse GTO based voltage source converter (VSC) topology together with a fundamental frequency switching mode of gate control is a mature technology being widely used in static synchronous compensators (STATCOMs). The present practice in utility/industry is to employ a high number of pulses in the STATCOM, preferably a 48-pulse along with matching components of magnetics for dynamic reactive power compensation, voltage regulation, etc. in electrical networks. With an increase in the pulse order, need of power electronic devices and inter-facing magnetic apparatus increases multi-fold to achieve a desired operating performance. In this paper, a competitive topology with a fewer number of devices and reduced magnetics is evolved to develop an 18-pulse, 2-level $\pm$ 100MVAR STATCOM in which a GTO-VSC device is operated at fundamental frequency switching gate control. The inter-facing magnetics topology is conceptualized in two stages and with this harmonics distortion in the network is minimized to permissible IEEE-519 standard limits. This compensator is modeled, designed and simulated by a SimPowerSystems tool box in MATLAB platform and is tested for voltage regulation and power factor correction in power systems. The operating characteristics corresponding to steady state and dynamic operating conditions show an acceptable performance.

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.109-113
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• 2020

A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower R_DS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys' process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.

• 전력전자학회논문지
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• 제6권5호
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• pp.400-409
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• 2001

대용량 승압형 응용을 위한 새로운 위상천이 병렬입력/직렬출력 듀얼 컨버터가 제안된 바 있다. 제안된 컨버터는 종래의 펄스 폭 변조(PWM) 방식의 병렬입력/직렬출력 듀얼 컨버터에 비해 낮은 스위치 전압 스트레스를 보여 저 손실의 소자를 사용할 수 있으므로 높은 효율을 보인다. 또한, 출력 캐패시터의 실효(RMS) 전류 스트레스가 낮고 입력 전류와 출력 전압의 맥동이 작으며, 제어 입력에 대한 출력 전압의 동역학(dynamics)이 빠른 장점이 있다. 본 논문에서는 제안된 컨버터의 정상상태 동작을 심도 있게 분석하고 그 수학적 모델 및 정상상태 해를 제시하며, 제안된 컨버터의 특징을 종래의 PWM 방식의 컨버터와의 비교를 통해 정량적으로 분석한다. 또한, 제안된 회로의 동작, 특성 및 유효성을 검증하기 위해 800W급 24-350Vdc 사양의 시작품으로부터의 실험 결과를 제시한다.

• 한국멀티미디어학회논문지
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• 제10권3호
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• pp.348-357
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• 2007

제한된 전원으로 동작해야 하는 센서 노드의 수명 연장을 위하여, 에너지 효율적인 센서 노드의 동작에 대한 많은 연구가 진행되었다. 그들 중에는 주기적으로 무선 송수신 모듈을 활성화 / 비활성화 하면서 정보전달을 위하여 인접 노드가 깨어나는 시점에 대한 정보를 필요로 하는 기법들이 존재한다. 클락 동기는 이러한 기법들에서 무선 송수신 모듈의 활성화 / 비활성화 스케줄링을 위하여 필수적인 요소이다. 본 논문에서는 센서 망에서 전역 클락 동기를 위하여 제안된 비동기 평균 알고리즘을 기반으로 주기적인 무신 송수신 모듈 활성화 / 비활성화 기법에서의 클락 동기 방법을 제안한다. 구체적으로 본 논문은 (1) 초기 자율적인 망 구성 시점에 필요한 신속한 클락 동기 방법과 (2) 에너지 소모를 최소화한 주기적인 클락 동기 방법 및 (3) 두 가지 동기 방법들 간의 전환 시점 판단 방법을 제안한다. 시뮬레이션을 통하여 제안한 방법의 클락 오차 범위와 교환되는 메시지 수를 분석한다.