• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.61-66
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• 2012

Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.5-9
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• 2008

Cordierite has a very low thermal expansion coefficient, but has problem that it has a weak mechanical strength and is apt to be attacked by acid such as sulfur for using as a diesel particulate filter support. The physical properties of $ZrTiO_4$ modified with $SiO_2,\;Al_2O_3$, MoOx, $Cr_2O_3\;and\;Nb_2O_5$ were investigated with XRD, SEM, UTM and thermal expansion, etc. in this paper. $ZrTiO_4$ powder was synthesized as a monoclinic structure with processes that starting materials of $TiO_2\;and\;ZrO_2$ were mixed with ball mill and calcined above $1240^{\circ}C$ for 3 hr. Additive modified $ZrTiO_4$ specimens for flexural strength and thermal expansion measurement were obtained by mixing $ZrTiO_4$ powder with additives, pressing and firing at $1300^{\circ}C$ for 3 hr. The porosity of additive modified $ZrTiO_4$ decreased monotonically with increasing additive content by 5 wt% regardless of additive types and saturated for further increase of additive by 10wt. The flexural strength of $Al_2O_3$ (5, 10 wt%) modified $ZrTiO_4$ shows a large increase, but that of other additives modified $ZrTiO_4$ decreased. The thermal expansion coefficient of additive modified $ZrTiO_4$ except $Nb_2O_5$ decreased continuously with the content of additive. In particular, the lowest thermal expansion coefficient of $ZrTiO_4$ was obtained for the additive of $SiO_2$.

• Journal of the Korean Electrochemical Society
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• v.10 no.4
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• pp.283-287
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• 2007

KIER has been developing the anode-supported flat tubular solid oxide fuel cell unit bundle for the intermediate temperature($700{\sim}800^{\circ}C$) operation. Anode-supported flat tubular cells have Ni/YSZ cermet anode support, 8 moi.% $Y_2O_3$ stabilized $ZrO_2(YSZ)$ thin electrolyte, and cathode multi-layer composed of Sr-doped $LaSrMnO_3(LSM)$, LSM-YSZ composite, and $LaSrCoFeO_3(LSCF)$. The prepared anode-supported flat tubular cell was joined with ferritic stainless steel cap by induction brazing process. Current collection for the cathode was achieved by winding Ag wire and $La_{0.6}Sr_{0.4}CoO_3(LSCo)$ paste, while current collection for the anode was achieved by using Ni wire and felt. For making stack, the prepared anode-supported flat tubular cells with effective electrode area of $90\;cm^2$ connected in series with 12 unit bundles, in which unit bundle consists of two cells connected in parallel. The performance of unit bundle in 3% humidified $H_2$ and air at $800^{\circ}C$ shows maximum power density of $0.39\;W/cm^2$ (@ 0.7V). Through these experiments, we obtained basic technology of the anode-supported flat tubular cell and established the proprietary concept of the anode-supported flat tubular cell unit bundle.

• Journal of Oral Medicine and Pain
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• v.32 no.3
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• pp.283-292
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• 2007

In several treatment modalities for snoring and obstructive sleep apnea (OSA), oral appliances mainly including mandibular advancement appliance (MAA) and tongue retaining device (TRD) are recognized as a non-invasive, reversible alternative with favorable results. Tongue bulb is a major component of TRD which prevents the tongue from approaching the posterior wall of the pharynx and can be combined with MAA. Determination of tongue bulb size for the patient is important for therapeutic effect, but frequently needs time-consuming work. For effective fabrication and standardization of tongue bulbs, this study aimed to categorize tongue bulb size for healthy young men and to examine its relation with maximum retention force and with physical parameters including tongue-related variables. 36 non-snoring, asymptomatic young men with normal occlusion were voluntarily participated in this study (mean age: $24.47{\pm}2.58$ years). Experimental procedures consisted of prefabrication of tongue bulb set (20 types with a width of 27-36mm and thickness of 8 and 10 mm), determination of tongue bulb size and the maximum retention force for each subject, and measurement of physical parameters including body mass index (BMI), neck circumference and width, thickness and length of tongue. This study showed that there was significant difference of retention force among the bulb size-related groups both in upright and supine position (p<0.05) and that retention force increased with bulb size. Correlation of tongue bulb size with physical parameters was not clearly verified and there was no significant difference in retention force between upright and supine positions. Based on our results, it can be suggested that retention force relates with tongue bulb size, ultimately with tongue volume. A further study needs to be performed in the patients with snoring and OSA.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1046-1054
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• 2001

Effects of B$_2$O$_3$and CuO addition on the microwave dielectric properties of the PbWO$_4$-TiO$_2$ceramics were investigated in order to use this material as an LTCC material for fabrication of a multilayered RF passive components module. We found that PbWO$_4$could be used as an LTCC material because of its low sintering temperature (8$50^{\circ}C$) and fairy good microwave dielectric properties($\varepsilon$$_{r}$=21.5, Q$\times$f$_{0}$=37200 GHz and $\tau$$_{f}$ =-31 ppm/$^{\circ}C$). In order to stabilize $\tau$$_{f}$ of PbWO$_4$, TiO$_2$was added to the PbWO$_4$and the mixture was sintered at 8$50^{\circ}C$. A near zero $\tau$$_{f}$ value (+0.2 ppm/$^{\circ}C$) was obtained with 8.7 mol% TiO$_2$addition. $\varepsilon$r and Q$\times$f$_{0}$ values were 22.3 and 21400 GHz, respectively. It was believed that the decrement of Q$\times$f$_{0}$ value with TiO$_2$addition was resulted from increasing grain boundary. In order to improve Q$\times$f$_{0}$, various amounts of B$_2$O$_3$and CuO were added to the 0.913PbWO$_4$-0.087TiO$_2$mixture. The optimum amount of CuO was 0.05 wt%. At this addition, the 0.913PbWO$_4$-0.087TiO$_2$ceramic showed $\varepsilon$$_{r}$=23.5, $\tau$$_{f}$ =-2.2ppm/$^{\circ}C$, and Q$\times$f$_{0}$=32900 GHz after sintered at 8$50^{\circ}C$. In case of B$_2$O$_3$addition, the optimum amount range was 1.0~2.5 wt% at which we could obtain following results; $\varepsilon$$_{r}$=20.3~22.1, Q$\times$f$_{0}$=48700~54700 GHz, and $\tau$$_{f}$ =+2.4~+8.2ppm/$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• The Journal of Korean Academy of Prosthodontics
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• v.47 no.2
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• pp.148-155
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• 2009

Statement of problem: The interest in all-ceramic restorations has increased as more techniques have become available. With the introduction of machinable dental ceramics and CAD/CAM systems there is a need to evaluate the quality levels of these new fabrication techniques. Purpose: This study is to evaluate the crown fidelity(absolute marginal discrepancy and internal gap) of various zirconia-based all-ceramic crowns fabricated with different CAD/CAM(computer-assisted design/computer-assisted manufacturing) systems and conventional cast metal-ceramic crowns. Material and methods: A resin tooth of lower right second premolar was prepared. After an impression was taken, one metal master die was made. Then 40 impressions of metal master dies were taken for working dies. 10 crowns per each system were fabricated using 40 working dies. Metal-ceramic crowns were cast by using the conventional method, and Procera, Lava, and Cerec inLab crowns were fabricated with their own CAD/CAM manufactruing procedures. The vertical marginal discrepancies and internal gaps of each crown groups were measured on a metal master die without a luting agent. The results were statistically analyzed using the one-way ANOVA and Tukey's HSD test. Results: 1. Vertical marginal discrepancies were $50.6{\pm}13.9{\mu}m$ for metal-ceramic crowns, $62.3{\pm}15.7{\mu}m$ for Procera crowns, $45.3{\pm}7.9{\mu}m$ for Lava crowns, and $71.2{\pm}2.0{\mu}m$ for Cerec inLab crowns. 2. The Internal gaps were $52.6{\pm}10.1{\mu}m$ for metal-ceramic crowns, $161.7{\pm}18.5{\mu}m$ for Procera crowns, $63.0{\pm}10.2{\mu}m$ for Lava crowns, and $73.7{\pm}10.7{\mu}m$ for Cerec inLab crowns. Conclusion: 1. The vertical marginal discrepancies of, 4 crown groups were all within the clinically acceptable range($120{\mu}m$). 2. The internal gaps of LAVA, Cerec inlab, and metal-ceramic crowns were within clinically acceptable range except Procera crown($140{\mu}m$).

• The Journal of Korean Academy of Prosthodontics
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• v.58 no.3
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• pp.177-184
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• 2020

Purpose: The purpose of this study was to compare and evaluate the tensile bond strength of chairside reline resin to denture base resin fabricated by different methods (subtractive manufacturing, additive manufacturing, and conventional heat-curing). Materials and methods: Denture base specimens were fabricated as cuboid specimens with a width of 25 mm × length 25 mm × height 3 mm by subtractive manufacturing (VITA VIONIC BASE), additive manufacturing (NextDent Base) and conventional heat-curing (Lucitone 199). After storing the specimens in distilled water at 37℃ for 30 days and drying them, they were relined with polyethyl methacrylate (PEMA) chairside reline resin (REBASE II Normal). The subtractive and additive manufacturing groups were set as the experimental group, and the heat-curing group was set as the control group. Ten specimens were prepared for each group. After storing all bound specimens in distilled water at 37℃ for 24 hours, the tensile bond strength between denture bases and chairside reline resin was measured by a universal testing machine at a crosshead speed of 10 mm/min. The fracture pattern of each specimen was analyzed and classified into adhesive failure, cohesive failure, and mixed failure. Tensile bond strength, according to the fabrication method, was analyzed by 1-way ANOVA and Bonferroni's method (α=.05). Results: Mean tensile bond strength of the heat-curing group (2.45 ± 0.39 MPa) and subtractive manufacturing group (2.33 ± 0.39 MPa) had no significant difference (P>.999). The additive manufacturing group showed significantly lower tensile bond strength (1.23 ± 0.36 MPa) compared to the other groups (P<.001). Most specimens of heat-curing and subtractive manufacturing groups had mixed failure, but mixed failure and adhesive failure showed the same frequency in additive manufacturing group. Conclusion: The mean tensile bond strength of the subtractive manufacturing group was not significantly different from the heat-curing group. The additive manufacturing group showed significantly lower mean tensile bond strength than the other two groups.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.1
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• pp.77-88
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• 2000

In this paper, the 3-mode variable gain high power amplifier for a transmitter of INMARSAT-B operating at L-band(1626.5-1646.5 MHz) was developed. This SSPA can amplify 42 dBm in high power mode, 38 dBm in medium power mode and 36 dBm in low power mode for INMARSAT-B. The allowable errol sets +1 dBm as the upper limit and -2 dBm as the lower limit, respectively. To simplify the fabrication process, the whole system is designed by two parts composed of a driving amplifier and a high power amplifier. The HP's MGA-64135 and Motorola's MRF-6401 were used for driving amplifier, and the ERICSSON's PTE-10114 and PTF-10021 for the high power amplifier. The SSPA was fabricated by the RP circuits, the temperature compensation circuits and 3-mode variable gain control circuits and 20 dB parallel coupled-line directional coupler in aluminum housing. In addition, the gain control method was proposed by digital attenuator for 3-mode amplifier. Then il has been experimentally verified that the gain is controlled for single tone signal as well as two tone signals. In this case, the SSPA detects the output power by 20 dB parallel coupled-line directional coupler and phase non-splitter amplifier. The realized SSPA has 41.6 dB, 37.6 dB and 33.2 dB for small signal gain within 20 MHz bandwidth, and the VSWR of input and output port is less than 1.3:1. The minimum value of the 1 dB compression point gets more than 12 dBm for 3-mode variable gain high power amplifier. A typical two tone intermodulation point has 36.5 dBc maximum which is single carrier backed off 3 dB from 1 dB compression point. The maximum output power of 43 dBm was achieved at the 1636.5 MHz. These results reveal a high power of 20 Watt, which was the design target.

• The Journal of Korean Society for Radiation Therapy
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• v.16 no.2
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• pp.19-24
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• 2004

Introduction : The Vaginal, the urethra, the vulva and anal cancer avoid the many dose to femur head and the additional treatment is necessary in inguinal LN. The partial transmission block to use inguinal LN addition there is to a method which it treats and produce partial transmission block a method and the MLC which to it analyzes. Material & Methode : The Inguinal the LN treatment patient partial transmission it used block and the MLC in the object and with solid water phantom with the patient it reappeared the same depth. In order to analyze the error of the junction the EDR2 (Extended dose range, the Kodak and the U.S) it used the Film and it got film scanner it got the beam profile. The partial transmission block and the MLC bias characteristic, accuracy and stability of production for, it shared at hour and comparison it analyzed. Result : The partial the transmission block compares in the MLC and the block production is difficult and production hour also above 1 hours. The custom the block the place where it revises the error of the junction is a difficult problem. If use of the MLC the fabrication will be break and only the periodical calibration of the MLC it will do and it will be able to use easily. Conclusion : The Inguinal there is to LN treatment and partial transmission block and the MLC there is efficiency of each one but there is a place where the junction of block for partial transmission block the production hour is caught long and it fixes and a point where the control of the block is difficult. like this problem it transfers with the MLC and if it treats, it means the effective treatment will be possible.