• Journal of Information Display
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• 제13권4호
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• pp.151-157
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• 2012

A simple method of fabricating out-coupling structures was demonstrated via solution-processing to enhance light extraction from organic light-emitting diodes (OLEDs). Scattering layers were easily obtained by spin-coating an $SiO_2$ sol solution that contained $TiO_2$ particles. By introducing the scattering layer and the solution-processible corrugated structure as internal and external extraction layers, the OLEDs showed increased external quantum efficiency without a change in the electroluminescence spectrum compared to conventional devices. Using these solution-processible out-coupling structures, nearly all-solution-processed OLEDs with enhanced light extraction could be fabricated. The light extraction enhancement is attributed to the suppression by the out-coupling structures of the light-trapping that arose at the interface of the glass substrate and the air.

• ETRI Journal
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• 제33권1호
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• pp.32-38
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• 2011

We investigated the light-emitting performances of blue phosphorescent organic light-emitting diodes, known as PHOLEDs, by incorporating an N,N'-dicarbazolyl-3,5-benzen interlayer between the hole transporting layer and emitting layer (EML). We found that the effects of the introduced interlayer for triplet exciton confinement and hole/electron balance in the EML were exceptionally dependent on the host materials: 9-(4-tert-butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole, 9-(4-tert-butylphenyl)-3,6-ditrityl-9H-carbazole, and 4,4'-bis-triphenylsilanyl-biphenyl. When an appropriate interlayer and host material were combined, the peak external quantum efficiency was greatly enhanced by over 21 times from 0.79% to 17.1%. Studies on the recombination zone using a series of host materials were also conducted.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1407-1410
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• 2007

This work reports on three primary color fluorescent white organic light emitting diode (WOLED) with simple device structure where only a part of the hole transporting layer was doped with dye. The maximum luminance of the device reaches $35000\;cd/m^2$ at a drive voltage below 11V and external quantum efficiency of the device is above 1% in the wide range of luminance from 10 to $35000\;cd/m^2$ and reaches its highest 1.6% at $500\;cd/m^2$. The chromaticity coordinate shift of the device is negligible in this wide range of luminance. The blue shift of emission color with an increase of current density was attributed to the narrowing of recombination zone width with raise of current density.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1042-1045
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• 2006

The electrical and optical properties of electrophosphorescent organic light-emitting diodes (OLEDs) with modified hole blocking layer (HBL) were investigated. Well-known 2,9-dimethyl-4,7- diphenyl-1,10-phenanthroline (BCP) HBL is mixed with electrophosphorescent host material (4,4'-N,N'- dicarbazole-biphenyl: CBP) or electrophosphorescent dopant material (fac-tris(2-phenylpyridine) iridium: $Ir(ppy)_3$) or both. The highest external quantum efficiency was obtained in the device with $BCP-CBP-Ir(ppy)_3$ mixed HBL and we attribute this result to the additional charge recombination in mixed-HBL.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1619-1622
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• 2005

The ultra thin hole injection layer (HIL) was deposited on an indium-tin-oxide (ITO) anode by using an ion beam assisted d eposition (IBAD) for the fabrication of an polymeric electroluminescence device for the first time. The device with the HIL deposited by IBAD has higher external quantum efficiency than the device with the HIL by conventional thermal evaporation. It is found that the deposited HIL by IBAD has high surface coverage on ITO anode in a few nm regions because the HIL prepared has high adatom mobility by ion beam energy.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.914-916
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• 2003

Novel red organic electroluminescent (EL) dye, RED was developed for an application to the emission layer of EL device. Well known red material DCJTB was also used for comparison. Two kinds of devices were fablicated; one is ITO/ CuPc / TPD / 0.5% RED-1 in Alq3/ Alq3/ Li20/ Al and the other is ITO/ CuPc /TPD / 0.5% DCJTB in Alq3/Alq3/ Li20 / Al. External quantum efficiency of the EL device with RED was two times higher than that of the device with DCJTB. The maximum EL peak was detected at 635nm in the RED EL device.

• ETRI Journal
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• 제28권5호
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• pp.555-560
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• 2006

A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of $190^{\circ}C$, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.

• ETRI Journal
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• 제31권6호
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• pp.642-646
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• 2009

Highly efficient white phosphorescent organic light-emitting diodes with a mixed-host structure are developed and the device characteristics are studied. The introduction of a hole-transport-type host (N, N'-dicarbazolyl-3-3-benzen (mCP)) into an electron-transport-type host (m-bis-(triphenylsilyl)benzene (UGH3)) as a mixed-host emissive layer effectively achieves higher current density and lower driving voltage. The peak external quantum and power efficiency with the mixed-host structure improve up to 18.9% and 40.9 lm/W, respectively. Moreover, this mixed-host structure device shows over 30% enhanced performance compared with a single-host structure device at a luminance of 10,000 $cd/m^2$ without any change in the electroluminescence spectra.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.493-496
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• 2009

We report the EL property of blue and blue-violet emitting materials with anthracene moiety as well as a new core structure containing indenopyrazine. Non-doped device using one of indenopyrazine core derivatives was found to exhibit excellent blue-violet color purity of (0.173, 0.063), and narrow emission band of 42nm FWHM. One of anthracene core derivatives with bulky side group also exhibits excellent color coordinates (0.156, 0.088) and an external quantum efficiency of 7.18%.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.91-94
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• 2017

AThe effect of localized surface plasmon on silicon substrates was studied using silver nanoparticles. The nanoparticles were formed by self-arrangement through the surface energy using rapid thermal annealing (RTA) technique after the thin nanolayer of silver was deposited by thermal evaporation. By the theoretical calculation based on Mie scattering and dielectric function of air, indium tin oxide (ITO), and silver, the strong peak of scattering cross section of silver nanoparticles was found at 358 nm for air, and 460 nm for ITO, respectively. Accordingly, the strong suppression of reflectance under the condition of induced light of $30^{\circ}$ occurred at the specific wavelength which is almost in accordance with peak of scattering cross section. When the external quantum efficiency was measured using silicon solar cells with silver nanoparticles, there was small enhancement peak near the 460 nm wavelength in which the light was resonated between silver nanoparticles and ITO.