• Title/Summary/Keyword: external quantum efficiency

Search Result 202, Processing Time 0.027 seconds

Performance of Organic light-emitting diode by various surface treatments of indium tin oxide (Indium tin oxide 기판의 표면처리에 따른 유기 발광다이오드의 특성)

  • Kim, Sun-Hyuk;Han, Jeong-Whan
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.39 no.9
    • /
    • pp.1-10
    • /
    • 2002
  • We have done various treatments of indium tin oxide (ITO) surface for organic light-emitting diodes (OLEDs), and investigated the surface states by different surface treatments using atomic force microscopy (AFM) and Auger electron spectroscopy (AES). We have fabricated OLEDs deposited by ultra-high vacuum molecular beam deposition system and studied the characteristics of the OLEDs. We have observed the dramatical improvement of the performance of OLEDs fabricated on ITO substrates treated by $O_2$ plasma treatment reduces the carbon comtamination of ITO surfaces and increases the work function of ITO.

Electroluminescence Characteristics of a New Green-Emitting Phenylphenothiazine Derivative with Phenylbenzimidazole Substituent

  • Ahn, Yeonseon;Jang, Da Eun;Cha, Yong-Bum;Kim, Mansu;Ahn, Kwang-Hyun;Kim, Young Chul
    • Bulletin of the Korean Chemical Society
    • /
    • v.34 no.1
    • /
    • pp.107-111
    • /
    • 2013
  • A new green-emitting material with donor-acceptor architecture, 3,7-bis(1'-phenylbenzimidazole-2'-yl)-10-phenylphenothiazine (BBPP) was synthesized and its thermal, optical, and electroluminescent characteristics were investigated. Organic light-emitting diodes (OLEDs) with four different multilayer structures were prepared using BBPP as an emitting layer. The optimized device with the structure of [ITO/2-TNATA (40 nm)/BBPP (30 nm)/TPBi (30 nm)/Alq3 (10 nm)/LiF (1 nm)/Al (100 nm)] exhibited efficient green emission. Enhanced charge carrier balance and electron mobility in the organic layers enabled the device to demonstrate a maximum luminance of 31,300 cd/$m^2$, a luminous efficiency of 6.83 cd/A, and an external quantum efficiency of 1.62% with the CIE 1931 chromaticity coordinates of (0.21, 0.53) at a current density of 100 mA/$cm^2$.

Characteristics of phosphorescent OLEDs and flexible OLED fabricated indium-zinc-tin-oxide anode (IZTO 애노드를 이용하여 제작한 인광 OLED 및 플랙시블 OLED 특성)

  • Choi, Kwang-Hyuk;Bae, Jung-Hyeok;Moon, Jong-Min;Jeong, Jin-A;Kim, Han-Ki;Kang, Jae-Wook;Kim, Jang-Joo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.06a
    • /
    • pp.399-400
    • /
    • 2007
  • In this work, we have investigated the characteristics of the phosphorescent OLED and flexible OLED fabricated on IZTO/glass and IZTO/PET anode film grown by magnetron sputtering, respectively. Electrical and optical characteristics of amorphous IZTO/glass anode exhibited similar to commercial ITO anode even though it was deposited at room temperature. In addition, the amorphous IZTO anode showed higher work function than that of the commercial ITO anode after ozone treatment for 10 minutes. Furthermore, a phosphorescent OLED fabricated on amorphous IZTO anode film showed improved current-voltage-luminance characteristics, external quantum efficiency and power efficiency in contrast with phosphorescent OLED fabricated on commercial ITO anode film. This indicates that IZTO anode is promising alternative anode materials for anode in OLEDs and flexible OLEDs.

  • PDF

Optimization and improvement about DSSCs efficiency as thickness of TiO2 photoelectrode with Al back-reflector

  • Lee, Yong-Min;Hwang, Gi-Hwan;Seo, Hyeon-Jin;Choe, Hyeon-Ji;Lee, Yul-Hui;Kim, Dong-In;Nam, Sang-Hun;Bu, Jin-Hyo
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2015.08a
    • /
    • pp.243.1-243.1
    • /
    • 2015
  • To replace the based on silicon solar cells, the third generation solar cells, Dye-sensitized solar cells (DSSCs), is low fabrication than silicon solar cells, environmentally friendly and can be applied to various field. For this reason, the DSSCs have been continuously researched. But DSSCs have one drawback that is the low power conversion efficiency (PCE) than silicon solar cells. To solve the problem, we used the backr-eflector the Al foil that can be easily obtained from the surrounding in order to improve the efficiency of the DSSCs. Easily detachable Al foil back-reflector increases the photocurrent by enhancing the harvesting light because the discarded light is reused. It also leads to enhance the power conversion efficiency (PCE). In addition, we compared with the efficiency of the DSSCs that is applied and does not be applied with back-reflector according to the thickness of the TiO2 photoelectrode. When the back-reflector is applied to DSSCs, the photocurrent is increased. It leads to affect the efficiency. We used to solar simulator and Electrochemical Impedance Spectroscopy (EIS) to confirm the PCE and resistance. The DSSCs were also measured by External Quantum effect (EQE). At the same time, FE-SEM and XRD were used to confirm the thickness of layer and crystal structural of photoelectrode.

  • PDF

Improvement of Outcoupled Light Efficiency of Organic Light-emitting Diodes with a Use of Microlens Array (마이크로 렌즈 어레이를 이용한 유기 발광 소자의 광추출 효율 향상에 관한 연구)

  • Kim, Hye Sook;Hwang, Deok Hyeon;Hong, Jin Woong;Song, Min Jong;Han, Wone Keun;Kim, Tae Wan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.27 no.5
    • /
    • pp.307-311
    • /
    • 2014
  • Because of a waveguiding effect and total internal reflection caused by a difference in refractive indices, only 20% of generated light is emitted to the air and the rest is trapped or absorbed in the device. An improvement of outcoupled efficiency of organic light-emitting diodes was studied using a microlens array. Mold of microlens array was fabricated by using photo-lithography with the AZ9260 photoresist, and the microlens array was formed onto the glass substrate using the UV curing agent named ZPU13-440. Device structure consists of microlens/glass/ITO/TPD/$Alq_3$/LiF/Al. It was found that there is an improvement of external quantum efficiency by about 20% at the same current density for the device with the microlens array compared to that of the reference one. Simulated outcoupled efficiency shows the improvement by about 20% for the device with the microlens array compared to that of the reference one. These results are consistent with the experimental ones.

Emission Characteristics of White Organic Light-Emitting Diodes Using Ultra Wide Band-gap Phosphorescent Material (Ultra Wide Band-gap 인광체를 이용한 백색 OLED의 발광 특성)

  • Chun, Hyun-Dong;Na, Hyunseok;Choo, Dong Chul;Kang, Eu-Seok;Yang, Jae-Woong;Ju, Sung-Hoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.25 no.11
    • /
    • pp.910-915
    • /
    • 2012
  • We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. The best blue emitting OLED and red emitting OLED characteristics were obtained at a concentration of 12 vol.% FIrpic and 1 vol.% $Bt_2Ir$(acac) in UGH3, respectively. And the optimum thickness of the total emitting layer was 25 nm. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue/red, blue/red, red/blue and co-doping emitting layer structures were fabricated using a host-dopant system. In case of white PHOLEDs with co-doping structure, the best efficiency was obtained at a structure UGH3: 12 vol. % FIrpic: 1 vol.% $Bt_2Ir$(acac) (25 nm). The maximum brightness, current efficiency, power efficiency, external quantum efficiency, and CIE (x, y) coordinate were 13,430 $cd/m^2$, 40.5 cd/A, 25.3 lm/W, 17 % and (0.49, 0.47) at 1,000 $cd/m^2$, respectively.

Electrical and Optical Properties of OLEDs Depending on the Layer Change of HIL Teflon-AF and EIL Li2CO3 (정공주입층재료 Teflon-AF와 전자주입층재료 Li2CO3의 층수 변화에 따른 유기발광다이오드의 전기·광학적 특성)

  • Kwang, Yong-Gil;Hong, Jin-Woong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.27 no.1
    • /
    • pp.50-55
    • /
    • 2014
  • It was firstly found in 1st group element. Recently, it has been reported on the improvement of efficiency of the OLEDs by introducing thin layer of some carbonate materials of alkali metal. In order to improve the efficiency of OLEDs which is one of the next generation displays, we have studied the electrical characteristics of the device depending on the thickness ratio of the hole-injection layer to the electron-injection layer. Teflon-AF was used as the hole-injection material, and alkali-metal carbonates of $Li_2CO_3$ were used as the electron-injection materials. To obtain a proper thickness ratio, we manufactured. Four types of devices with the thickness ratio of HIL to EIL were made to be 1 : 4, 2 : 3, 3 : 2, and 4 : 1. The results of electrical and optical properties showed that the device with the thickness ratio of 4 : 1 is the most excellent result. In addition, to prepare a four-layer device by inserting the ${\alpha}$-NPD is a hole transporting material was compared with three-layer element. As a result, the maximum luminance, the maximum luminous efficiency, maximum external quantum efficiency of about 124 [%], 164 [%], 106 [%] improve was confirmed.

Effect of Stepwise Doping on Performance of Green Phosphorescent Organic Light-Emitting Diodes (단계적 도핑구조에 따른 녹색 인광 유기발광 다이오드의 성능에 미치는 효과에 관한 연구)

  • Hwang, Kyo-Min;Lee, Song-Eun;Lee, Seul-Bee;Yoon, Seung-Soo;Kim, Young-Kwan
    • Journal of the Korean Applied Science and Technology
    • /
    • v.32 no.1
    • /
    • pp.1-6
    • /
    • 2015
  • We investigated green phosphorescent organic light-emitting diodes with stepwise doping to improve efficiency roll-off and operational lifetime by efficient distribution of triplet excitons. The host material which was 4,4,N,N'-dicarbazolebiphenyl (CBP) of bipolar characteristic that can control the carrier in emitting layer (EML). When the EML devided into four parts with different doping concentration, each devices shows various efficiency roll-off and lifetime enhancement. The distribution of the carrier and excitons in the EML can be confirmed by using stepwise doping structure. The properties of device C exhibited luminous efficiency of 51.10 cd/A, external quantum efficiency of 14.88%, respectively. Lifetime has increased 73.70% compared to the reference device.

Solution Processed Hexaazatrinaphthylene derivatives as a efficient hole injection layer for phosphorescent organic light-emitting diodes (신규 용액공정 정공주입층 소재 Hexaazatrinaphthylene 유도체를 도입한 인광 유기전기발광소자)

  • Lee, Jangwon;Sung, Baeksang;Lee, Seung-Hoon;Yoo, Jae-Min;Lee, Jae-Hyun;Lee, Jonghee
    • Journal of IKEEE
    • /
    • v.24 no.3
    • /
    • pp.706-712
    • /
    • 2020
  • To improve light-emitting performance of green phosphorescent organic light-emitting diodes (OLEDs), we introduced new hole injection materials-hexaazatrinaphthylene (HATNA) derivatives as a solution processed hole injection layer (HIL). The HATNA derivative has a low the lowest unoccupied molecular orbital (LUMO) energy level, similar to the work function of Indium Tin Oxide (ITO), showing a different concept of hole injection mechanism. It was confirmed that the device efficiency of OLEDs using HATNA-HIL showed the improved external quantum efficiency from 10.8% to 15.6% and current efficiency from 32.7 cd/A to 42.7 cd/A due to the balance of electrons and holes in the emissive layer.

Investigation on the Electrical Characteristics of mc-Si Wafer and Solar Cell with a Textured Surface by RIE (플라즈마기반 표면 Texturing 공정에 따른 다결정 실리콘 웨이퍼 표면물성과 태양전지 동작특성 연구)

  • Park, Kwang-Mook;Jung, Jee-Hee;Bae, So-Ik;Choi, Si-Young;Lee, Myoung-Bok
    • Journal of the Korean Vacuum Society
    • /
    • v.20 no.3
    • /
    • pp.225-232
    • /
    • 2011
  • Reactive ion etching (RIE) technique for maskless surface texturing of mc-silicon solar wafers has been applied and succeed in fabricating a grass-like black-silicon with an average reflectance of $4{\pm}1%$ in a wavelength range of 300~1,200 nm. In order to investigate the optimized texturing conditions for mass production of high quantum efficiency solar cell Surface characteristics such as the spatial distribution of average reflectance, micrscopic surface morphology and minority carrier lifetime were monitored for samples from saw-damaged $15.6{\times}15.6\;cm^2$ bare wafer to key-processed wafers as well as the mc-Si solar cells. We observed that RIE textured wafers reveal lower average reflectance along from center to edges by 1% and referred the origin to the non-uniform surface structures with a depth of 2 times deeper and half-maximum width of 3 times. Samples with anti-reflection coating after forming emitter layer also revealed longer minority carrier lifetime by 40% for the edge compared to wafer center due to size effects. As results, mc-Si solar cells with RIE-textured surface also revealed higher efficiency by 2% and better external quantum efficiency by 15% for edge positions with higher height.