• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.679-682
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• 1995

The observed high-field magnetization curves of $Sm_{2}Fe_{17}N_{3.0}$ at 4.2 K and 296 K are well reproduced by the calculation using the Sm-Fe exchange field $2\mu\textrm{B}H_{ex}\;=\;320\;K$ and two crystalline electric field parameters ${A_{0}}^{2}=\;-910\;K$ and ${A_{1}}^{0}=\;200\;K$. The calculation shows that during the magnetization process along the hard axis at 4.2 K, the Sm moment rotates toward the direction antiparallel to H when H < 110 kOe and then returns to the field direction with further increase of the field. At 296 K, the Sm moment rotates toward the direction antiparallel to H monotonously with increasing field and finally becomes antiparallel to H when $H{\geq}H_{A}=210\;kOe$. The particular magnetization process of the Sm moment can be explained by the field-induced noncollinear coupling between the spin and orbital moments of the Sm ion.

• Journal of Magnetics
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• v.10 no.3
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• pp.113-117
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• 2005

Some polycrystalline ferromagnetic mms are composed of continuously connected nanometer scale islands with random crystallite orientations. The nanometer perturbations of the mm introduce a large number of nearly degenerate local field configurations that are indistiguishable on a macroscopic scale. As a first step, this situation is modelled as a thin ferromagnetic disc coupled by exchange and dipole interactions to a homogeneous ferromagnetic plane, where the disc and plane have different easy axes. The model is solved to find the partial $N\acute{e}el$ domain walls that minimize the magnetic energy. The two solutions give a bistable configuration that, for appropriate geometries, provides an important microsopic ferromagnetic degree of freedom for the mm. These results are used to interpret recent measurements of exchange biased bilayer films.

• Journal of Magnetics
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• v.5 no.1
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• pp.23-25
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• 2000

We have investigated the effects of Ar and$O_2$-ion milling on the exchange coupling field ($H_{ex}$) and coercive field ($H_c$) at the interfaces between substrates and NiO/NiFe films, to understand the exchange biasing mechanism. The $O_2$-ion milling was successfully performed by means of the electron cyclotron resonance (ECR) process. We found that the local roughness gradient of the NiO surface increased by $O_2$-ion milling. The ratio of $H_{ex}/H_c$ increased from 0.87 to 1.77, whereas $H_c$ decreased by almost a half as a results of the ion milling. The decrease in $H_c$could be interpreted as due to the refinement of magnetic domain size, which arose from the increase of the local roughness gradient of the NiO surface. The decrease in low $H_c$, and increase in $H_{ex}$ in NiO spin valves by ECR-ion milling are in the right direction far use in magnetoresistance (MR) heads.

• Journal of the Korean Magnetics Society
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• v.25 no.4
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• pp.117-122
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• 2015

The holes with a diameter of $35{\mu}m$ inside the GMR-SV (giant magnetoresistance-spin valve) film were patterned by using the photolithography process and ECR (electron cyclotron resonance) Ar-ion milling. From the magnetoresistance curves of the GMR-SV film with holes measuring by 4-electrode method, the MR (magnetoresistance ratio) and MS (magnetic sensitivity) are almost same as the values of initial states. On other side hand, the $H_{ex}$ (exchange bias coupling field) and $H_c$ (coercivity) dominantly increased from 120 Oe and 10 Oe to 190 Oe and 41 Oe as increment of the number of holes inside GMR-SV film respectively. These results were shown to be attributed to major effect of EMD (easy magnetic domian) having a region positioned between two holes perpendicular to the sensing current. On the basis of this study, the fabrication of GMR-SV applying to the hole formation improved the magnetoresistance properties having the thermal stability and durability of bio-device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.351-356
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• 1995

A optical switch which on the LiNbO$_3$substrate is fabricated by using proton exchange method and self-alignet method. The annealing at 400[$^{\circ}C$] was carried out to control waveguide width and depth. A self-aligned method, which doesn\`t need the additional mask precesses, was applied to simplify the fabrication processes and to maximize efficiency of electric field application. The depths of the two annealed optical waveguides, which were measured by using ${\alpha}$-step, ware 1.435[K${\AA}$] and 1,380[K${\AA}$]. Using ${\alpha}$-step facility, we examined that the width of waveguides is increased from 5[$\mu\textrm{m}$] to 6.45[$\mu\textrm{m}$] and 6.3[$\mu\textrm{m}$] due to the annealing effects. The process of proton exchange was done at 400[$^{\circ}C$] for 60[min] and annealing process was done at 400[$^{\circ}C$] for 60[min]. The high speed optical modulator has very good figures of merits: the measured voltage of the input waveguide power is 3.5[V], the voltage of the coupling waveguide power is 3.9[mV], and -29.5[dB] crosstalk and 8[V] switching voltage were achieved.

• Journal of Magnetics
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• v.13 no.1
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• pp.11-18
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• 2008

This study examines a new macroscopic ferrimagnet, Co-TbN. This ferrimagnet, consisting of two metallic phases, Co and TbN, demonstrated the typical macroscopic ferrimagnet properties of a magnetic compensation point and a negative giant magnetoresistance (GMR). The Co-TbN system with 32% TbN composition showed 0.72% GMR in magnetic fields up to 8 kOe at room temperature and 9% GMR in 40 kOe at 250 K. In the Co-TbN system, GMR exhibited a different dependence on temperature from that of ordinary GMR materials whose negative magnetoresistance decreases with increasing temperature. In contrast to ordinary GMR materials whose negative magnetoresistance decreases with increasing temperature, the GMR effect in the Co-TbN system increased with increasing temperature, due to the increase of ferromagnetic alignment of the Co and TbN in the magnetic field caused by the decreased exchange coupling with increasing temperature.

• Journal of Magnetics
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• v.6 no.1
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• pp.19-22
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• 2001

Change of magnetic properties in CoCrPt/Ti perpendicular media with varying CoCrPt film thickness has been studied. As the CoCrPt film thickness increases from 25 nm, the Ms (saturation magnetization) increases rapidly at first and then more gradually. This Ms behavior is associated primarily with the formation of an "amorphous-like"reacted layer created by intermixing of CoCrPt and Ti at the CoCrPt/Ti interface and secondarily with a change of the Cr segregation mode with varying CoCrPt film thickness. Magnetic domain structure distinctively changes with increasing CsCrPt magnetic layer (ML) thickness. Also the strength of exchange coupling measured from the slope in the demagnetizing region of the M-H loop changes with ML thickness. The expansion of lattice parameters a and c at smaller film thickness suggests that the Cr segregation mode may be connected with the residual stress of the films. Finally, the negative nucleation field (Hn) shows a unique behavior with the change of strength of the exchange interaction.teraction.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.369-376
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• 2000

Change of magnetic properties in CoCrPt/Ti perpendicular media with varying CoCrPt films thickness has been studied. As CoCrPt films thickness increase, the Ms(magnetization saturation) drastically increases at thinner thickness and gradually increases with further increase in thickness from 25nm. This Ms behaviour is associated with primarily the formation of "amorphous-like" reacted layer by intermixing of CoCrPt and Ti at CoCrPt/Ti interface and secondarily change of Cr segregation mode with varying the CoCrPt films thickness. Magnetic domain structure distinctively changes with increasing CoCrPt magnetic layer(ML) thickness. Also the strength of exchange coupling measured from the slope in demagnetizing region in M-H loop changes with ML thickness. Details of the above magnetic properties will be discussed. The expansion of lattice parameters a and c at thinner thickness suggests that Cr segregation mode may be connected with the residual stress of the films. Finally, negative nucleation field(Hn) behaviour with the exchange slope will be reported.

• Journal of the Korean Magnetics Society
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• v.1 no.2
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• pp.31-36
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• 1991

Structural and compositional heterogeneities of sputter deposited, amorphous $Co_{87}Zr_{4}NB_{9}$ thin films were investigated using TEM and EDS with windowless detector. The films deposited with substrate bias and annealed in rotating magnetc field showed two amorphous phases of Co-rich region and (ZrNb)oxide-rich region, and revealed 'ultra-soft' magnetic properties. Revesible bias-responses and overdamped frequency responses, along with small Hc, Hk and Mr/Ms ratio, give the possibility of ultra-soft magnetic behavior fo CoZrNb thin films. We proposed the vortex type magnetization distribution in remanent state which was correlated with the thin film heterogeneity. Then, the ultra-soft characteristics of the compositionally heterogeneous films were explained by the spin vortices that minimized the total magnetostatic and exchange coupling energies.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.494-500
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• 2014

Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide ($SiO_2$) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: $350^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, and $600^{\circ}C$. All samples showed semiconducting behavior and exhibited n-channel TFT. Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.