• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.304-305
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• 2013

We report a positive exchange bias (HE) in thinmultilayered filmscontaining nano-oxide layer. The positive HE, obtained for our system results from an antiferromagnetic coupling between the ferromagnetic (FM) CoFe and the antiferromagnetic (AFM) CoO layers, which spontaneously form on top of the nano-oxide layer (NOL). The shift in the hysteresis loop along the direction of thecooling field and the change in the sign of exchange bias are evidence of antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. Our calculation indicates that uncompensated oxygen moments in the NOL results in antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. One of the interesting features observed with our system is that it displays the positive HE even above the bulk Neel temperature (TN) of CoO. Although the positive HEsystem has a different AFM/FM interfacial spin structure compare to that of the negative HE one, the results of the angular dependence measurements show that the magnetization reversal mechanism can be considered within the framework of the coherent rotation model.

• Journal of Magnetics
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• 제11권2호
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• pp.77-82
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• 2006

The structure and magnetic properties of Fe-Ni films, deposited by DC magnetron sputtering on Si(111) wafer, have been studied. The spin wave stiffness constant is determined by Brillouin light scattering (BLS) and compared with the value obtained from magnetization measurements. The range of exchange interaction was determined as 0.4 atomic distances in the film deposited in a bias magnetic field, which is 1/2 that in the film grown in no bias magnetic field. The results show that the dimensions of exchange coupling increased by the sputtering in the magnetic field.

• Journal of Magnetics
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• 제15권1호
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• pp.17-20
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• 2010

The relationship between ferromagnet anisotropic magnetization and the antiferromagnet atomic spin configuration was investigated for various angles of the uniaxial deposition magnetic field of the FeMn layer in the Corning glass/Ta(5nm)/NiFe(7nm)/FeMn(25nm)/Ta(5nm) multilayer that was prepared by the ion beam sputter deposition. The exchange bias field ($H_{ex}$) obtained from the measurement of the easy-axis MR loop decreased to 40 Oe at the deposition field angle of $45^{\circ}$, and to 0 Oe at the angle of $90^{\circ}$. When the difference between the uniaxial axis between the ferromagnet NiFe and the antiferromagnet FeMn was $90^{\circ}$, the strong antiferromagnetic dipole moment of FeMn caused the weak ferromagnetic dipole moment of NiFe to rotate in the interface.

• 한국자기학회지
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• 제12권4호
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• pp.143-148
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• 2002

일축이방성을 부여한 NiO/NiFe 박막을 제작하고 이들의 강한 교환결합력과 약한 교환결합력의 분포에 대하여 조사하였다. 제작된 시편들의 교환결합력의 크기는 VSM 측정과 이방성자기저항측정을 통하여 확인하였으며, 회귀분석법을 통하여 두 교환결합력의 상호관계를 조사하였다. NiO(60nm)/NiFe(10nm)시편의 경우 전체 교환결합력 중에서 차지하는 약한 교환결합력의 크기는 외부인가자장의 크기에 관계없이 일정한 비율($\alpha$=0.2~0.4)을 나타내었고 이는 약한 교환결합을 하는 영역이 일정하게 존재함을 보여준다. 교환결합력의 크기가 서로 다른 시편의 경우는 교환결합력의 크기가 작을수록 전체 교환결합력 중에서 차지하는 약한 교환결합력의 크기가 컸으며, 교환결합력의 크기가 증가할수록 그 비율이 감소하였다. 이는 약한 교환결합을 하는 영역이 일정하게 존재한다고 가정할 경우 전체의 평균 교환결합력의 크기가 감소함에 따라 그 비율이 증가한 것으로 해석할 수 있다. 따라서 NiO/NiFe 박막에서 강한 교환결합을 하는 영역과 약한 교환결합을 하는 영역이 일정하게 존재함을 알 수 있다.

• 한국자기학회지
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• 제12권4호
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• pp.132-136
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• 2002

유리기관 위에 이온 빔 증착(ion beam deposition ; IBD)법으로 제작한 버퍼층(buffer layer) Si의 두께에 따른 ［NiFe/FeMn/NiFe］3층박막의 결정성과 교환결합세기(exchange bias field ; H$_{ex}$)를 조사하였다. 버퍼층 Si는 NiFe층을 fcc(111)로 매우 우세하게 초기에 결정성장 시켰다. Si/NiFe 위의 증착된 FeMn층은 ${\gamma}$-fcc(111)구조로 성장함에 따라 안정되고 큰 H$_{ex}$를 가졌고, 버퍼 110 Oe로 거의 일정하였으며, 상부 FeMn/NiFe 이중구조의 H$_{ex}$는 300 Oe까지 증가하였다. 버퍼층이 Ta일 경우와 비교해서 Si일 때 H$_{ex}$와 결정성이 향상되었다.이 향상되었다.

• Journal of Magnetics
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• 제16권2호
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• pp.83-87
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• 2011

The vortex-driven magnetization process of micron-sized, exchange-coupled square elements with composition of $Ni_{80}Fe_{20}$ (12 nm)/$Ir_{20}Mn_{80}$ (5 nm) is investigated. The exchange-bias is introduced by field-cooling through the blocking temperature (TB) of the system, whereby Landau-shaped vortex states of the $Ni_{80}Fe_{20}$ layer are imprinted into the $Ir_{20}Mn_{80}$. In the case of zero-field cooling, the exchange-coupling at the ferromagnetic/antiferromagnetic interface significantly enhances the vortex stability by increasing the nucleation and annihilation fields, while reducing coercivity and remanence. For the field-cooled elements, the hysteresis loops are shifted along the cooling field axis. The loop shift is attributed to the imprinting of displaced vortex state of $Ni_{80}Fe_{20}$ into $Ir_{20}Mn_{80}$, which leads to asymmetric effective local pinning fields at the interface. The asymmetry of the hysteresis loop and the strength of the exchange-bias field can be tuned by varying the strength of cooling field. Micromagnetic modeling reproduces the experimentally observed vortex-driven magnetization process if the local pinning fields induced by exchange-coupling of the ferromagnetic and antiferromagnetic layers are taken into account.

• Journal of Magnetics
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• 제16권2호
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• pp.97-100
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• 2011

Bilayers of soft NiFe (150 nm-420 nm) on hard Ni (150 nm) were prepared by electrodeposition. The process of magnetization reversal in the NiFe/Ni bilayers was then investigated. The hysteresis loop generated by a magnetization reversal of soft NiFe under a positive saturation state of a hard Ni layer shows a shift along the negative field axis, which is clear evidence for the exchange spring effect in the NiFe/Ni bilayers. The dependence of the coercive field $H_c$ and exchange bias field Hex on the thickness of the NiFe layer was also investigated. As the NiFe thickness increases from 150 nm to 420 nm, both $H_c$ and $H_{ex}$ decrease rapidly from $H_c$= 51.7 Oe and $H_{ex}$ = 12.2 Oe, and saturate to $H_c$ = 5.8 Oe and $H_{ex}$ = 3.5 Oe.

• 한국재료학회지
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• 제13권7호
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• pp.447-452
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• 2003

Effects of annealing and thickness of Co layer in Co/IrMn bilayers on the magnetic properties have been investigated. The highest interfacial exchange coupling energy($J_{K}$ = 0.12 erg/$\textrm{cm}^2$) was obtained for 10 nm Co layer thickness. Exchange bias field is inversely proportional to the magnetization, the thickness of the pinned layer, and the grain size of antiferromagnetic layer. Also it is related to the interfacial exchange energy difference, which is expected to depend on the surface roughness. These results almost agree with the random-field model of exchange anisotropy proposed by Malozemoff. Exchange bias field decreased slowly with increasing annealing temperature up to X$300^{\circ}C$. However, exchange bias field increased above $300^{\circ}C$.

• Journal of Magnetics
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• 제21권2호
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• pp.159-163
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• 2016

Antiferromagnet (AFM)/ferromagnet (FM) bilayer structures are widely used in the magnetic devices of sensor and memory applications, as AFM materials can induce unidirectional anisotropy of the FM material via exchange coupling. The strength of the exchange coupling is known to be sensitive to quality of the interface of the AFM/FM bilayers. In this study, we utilize proton irradiation to modify the interface structures and investigate its effect on the magnetic properties of AFM/FM structures, including the exchange bias and magnetic thermoelectric effect. The magnetic properties of IrMn/CoFeB structures with various IrMn thicknesses are characterized after they are exposed to a proton beam of 3 MeV and $1{\sim}5{\times}10^{14}ions/cm^2$. We observe that the magnetic moment is gradually reduced as the amount of the dose is increased. On the other hand, the exchange bias field and thermoelectric voltage are not significantly affected by proton irradiation. This indicates that proton irradiation has more of an influence on the bulk property of the FM CoFeB layer and less of an effect on the IrMn/CoFeB interface.

• 한국자기학회지
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• 제22권6호
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• pp.204-209
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• 2012

본 연구에서는 CoFe/MnIr 이중층 구조의 계면에 존재하는 비상보성 반강자성(AF) 스핀들에 의한 교환 결합 에너지 특성을 강자성 공명(FMR) 측정법을 이용하여 분석하였다. MnIr의 두께가 $t_{AF}$= 0, 3 및 10 nm 재료를 열처리한 한 후 이들 재료의 FMR 신호를 측정하였으며, $t_{AF}$= 0 nm 재료를 기준으로 하여 $t_{AF}$= 3 및 10 nm 재료의 교환 바이어스 자기장($H_{ex}$)과 회전 이방성 자기장($H_{ra}$)을 도출하였다. $300^{\circ}C$에서 열처리한 재료의 경우, $H_{ex}$과 $H_{ra}$의 합은 MnIr의 임계 두께에 무관하게 동일한 값을 보이는데, 이는 비상보성 AF 스핀들이 모두 한 방향으로 정열 되었음을 의미한다. 이들 결과로부터 비상보성 AF 스핀들 중에서 일부분은 CoFe/MnIr의 계면에 고정되어 $H_{ex}$로 발현되어 나타나고, 나머지 부분은 자기장의 방향에 따라서 회전하므로 $H_{ra}$로 발현되고 있음을 알 수 있었다. 따라서 교환 결합 에너지는 교환 바이어스 에너지 및 회전 이방성 에너지의 합으로 표현될 수 있음을 보였다.