• Journal of Magnetics
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• v.16 no.2
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• pp.83-87
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• 2011

The vortex-driven magnetization process of micron-sized, exchange-coupled square elements with composition of $Ni_{80}Fe_{20}$ (12 nm)/$Ir_{20}Mn_{80}$ (5 nm) is investigated. The exchange-bias is introduced by field-cooling through the blocking temperature (TB) of the system, whereby Landau-shaped vortex states of the $Ni_{80}Fe_{20}$ layer are imprinted into the $Ir_{20}Mn_{80}$. In the case of zero-field cooling, the exchange-coupling at the ferromagnetic/antiferromagnetic interface significantly enhances the vortex stability by increasing the nucleation and annihilation fields, while reducing coercivity and remanence. For the field-cooled elements, the hysteresis loops are shifted along the cooling field axis. The loop shift is attributed to the imprinting of displaced vortex state of $Ni_{80}Fe_{20}$ into $Ir_{20}Mn_{80}$, which leads to asymmetric effective local pinning fields at the interface. The asymmetry of the hysteresis loop and the strength of the exchange-bias field can be tuned by varying the strength of cooling field. Micromagnetic modeling reproduces the experimentally observed vortex-driven magnetization process if the local pinning fields induced by exchange-coupling of the ferromagnetic and antiferromagnetic layers are taken into account.

• Journal of the Korean Magnetics Society
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• v.14 no.4
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• pp.127-130
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• 2004

Magnetic properties and thermal stability by exchange biased perpendicular magnetic anisotropy in (Pd/Co)$_{N}$FeMn multilayer deposited by do magnetron sputtering system are investigated. We measured the perpendicular magnetization curves of (Pd(0.8nm)/Co(0.8nm)$_{5}$FeMn multilayer as function of FeMn thickness and annealing temperature. As FeMn thickness increases from 0 to 21nm, the perpendicular exchange bias(Hex) obtained 127 Oe at FeMn thickness 15nm. As the annealing temperature increases to 24$0^{\circ}C$, the E$_{ex}$ increased from 115 Oe to 190 Oe and disappeared exchange biased perpendicular magnetic anisotropy effect at 33$0^{\circ}C$.

• Journal of the Korean Magnetics Society
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• v.12 no.1
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• pp.24-29
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• 2002

It was observed that exchange bias field was increased with smooth surface and better ${\gamma}$-FeMn formation. Sputtering conditions were varied for the control of the surface roughness and ${\gamma}$-FeMn formation. From the results of Cu deposition as underlayer, it was found that ${\gamma}$-FeMn formation was closely related with the thickness of underlayer. After heat treatment, exchange bias field was increased over three times. This improvement was likely that the crystallites of ${\gamma}$-FeMn were well formed. In Co/Cu/Co/FeMn spin valve structure, magnetoresistance was increased over 1.4 times through the heat treatment. This was due to the disappearance of Co/Cu intermixed dead layer and removal of defect, and this was examined by AES analysis.

• Molecules and Cells
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• v.39 no.7
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• pp.550-556
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• 2016

During meiosis, exchange of DNA segments occurs between paired homologous chromosomes in order to produce recombinant chromosomes, helping to increase genetic diversity within a species. This genetic exchange process is tightly controlled by the eukaryotic RecA homologs Rad51 and Dmc1, which are involved in strand exchange of meiotic recombination, with Rad51 participating specifically in mitotic recombination. Meiotic recombination requires an interaction between homologous chromosomes to repair programmed double-strand breaks (DSBs). In this study, we investigated the budding yeast meiosis-specific proteins Hop2 and Sae3, which function in the Dmc1-dependent pathway. This pathway mediates the homology searching and strand invasion processes. Mek1 kinase participates in switching meiotic recombination from sister bias to homolog bias after DSB formation. In the absence of Hop2 and Sae3, DSBs were produced normally, but showed defects in the DSB-to-single-end invasion transition mediated by Dmc1 and auxiliary factors, and mutant strains failed to complete proper chromosome segregation. However, in the absence of Mek1 kinase activity, Rad51-dependent recombination progressed via sister bias in the $hop2{\Delta}$ or $sae3{\Delta}$ mutants, even in the presence of Dmc1. Thus, Hop2 and Sae3 actively modulate Dmc1-dependent recombination, effectively progressing homolog bias, a process requiring Mek1 kinase activation.

• Analytical Science and Technology
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• v.8 no.4
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• pp.597-601
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• 1995

The transfer of chloride ion across an anion exchange membrane (AEM) was investigated by cyclic voltammetry (CV) and electrochemical impedance spectra. In CV experiment, when the size of the hole in membrane was much smaller than the distance between membrane holes, the Cl anion transfer showed steady state voltammetric behavior. Each hole in membrane can be regarded as a microelectrode and the membrane was equivalent to a microelectrode array in this condition. When the hole in membrane was large or the distance between membrane holes was small, the CV curve of the Cl anion transfer across membrane showed peak shape, which attributed to linear diffusion. In ac impedance measurement, the impedance spectrum of the membrane system was composed of two semicircles at low de bias, corresponding to the bulk characteristics of the membrane and the kinetic process of ion transfer, respectively. The bulk membrane resistance increases with increasing dc bias and only one semicircle was observed at higher dc bias. The parameters related to kinetic and membrane properties were discussed.

• Journal of the Korean Magnetics Society
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• v.26 no.2
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• pp.50-54
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• 2016

We analyzed the angular dependence of ferromagnetic resonance linewidth in exchange coupled CoFe/MnIr bilayers. The maximum and minimum linewidth was observed in the easy and hard direction of unidirectional anisotropy by exchange coupling, respectively, and it was well agreed with the angular dependence of exchange bias field. The maximum linewidth was due to the twist of CoFe magnetization near CoFe/MnIr interface from direction of pinned MnIr spin to direction of applied magnetic field. While, minimum linewidth more higher than that of CoFe was related to rotatable anisotropy field, and explained by easy axis distribution of MnIr grains.

• Journal of Electrochemical Science and Technology
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• v.12 no.3
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• pp.358-364
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• 2021

In this study, an anion exchange membrane water electrolysis (AEMWE) cell was operated for ~1000 h at a voltage bias of 1.95 V. Impedance spectra were regularly measured every ~ 100 h, and changes in the ohmic and non-ohmic resistance were traced as a function of time. While there was relatively little change in the I-V curves and the total cell resistance during the long-term test, we observed various electrochemical phenomena in the cell: 1) initial activation with a decrease in both ohmic and non-ohmic resistance; 2) momentary and non-permanent bubble resistance (non-ohmic resistance) depending on the voltage bias, and 3) membrane degradation with a slight increase in the ohmic resistance. Thus, the regular test protocol used in this study provided clear insights into the performance degradation (or improvement) mechanism of AEMWE cells.

• Journal of Electrochemical Science and Technology
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• v.13 no.3
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• pp.369-376
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• 2022

In this study, the stability of an anion exchange membrane water electrolyzer (AEMWE) cell was evaluated in an on-off cycling operation with respect to an applied electric bias, i.e., a current density of 500 mA cm^-2, and an open circuit. The ohmic and polarization resistances of the system were monitored during operation (~800 h) using electrochemical impedance spectra. Specific consideration was given to the ohmic resistance of the cell, especially that of the membrane under on-off cycling conditions, by consistently feeding the cell with KOH solution. Owing to an excess feed solution, a momentary increase in the polarization resistance was observed immediately after the open-circuit. The excess feed solution was mostly recovered by subjecting the cell to the applied electric bias. Stability tests on the AEMWE cell under on-off cycling with continuous feeding even under an open circuit can guarantee long-term stability by avoiding an irreversible increase in ohmic and polarization resistances.

• Journal of the Korean Magnetics Society
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• v.12 no.4
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• pp.143-148
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• 2002

We report an experimental evidence of coexistence of the strong and weak exchange couplings in unidirectional NiO/NiFe (antiferromagneticlferromagnetic) bilayer thin films. The exchange bias was measured by VSM and AMR techniques and then, analyzed into the strong and weak exchange couplings by means of a regression method. In NiO(60nm)/NiFe(10nm) film, the ratio of the weak exchange coupling field over the average exchange coupling field was found to be almost unchanged within it range from 0.2 to 0.4 irrespective to the strength of an applied field. However, the ratio increased among the samples with decreasing the average exchange coupling field due to the increment of the weak exchange coupling area.

• Journal of the Korean Magnetics Society
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• v.18 no.3
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• pp.98-102
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• 2008

Dependence of the exchange bias and coercivity as surface magnetic anisotropy and ferromagnet materials for $[Pd/Co]_N$ and $[Pd/Co,(CoFe)]_N$/FeMn multilayers with perpendicular magnetic anisotropy were investigated. The coercivity was proportionally increased to 670 Oe by increasing stack number N in Ta(2.1 nm)/[Pd(3.1/N)/$Co(1.2/N)]_N$/Ta(2.1) multilayers with perpendicular magnetic anisotropy. Also, the coercivity in exchange biased multilayer was tend to increased by increasing stack number N. But coercivity of each materials have been in order of Co (600 Oe), $Co_5Fe_5$ (520 Oe) and $Co_8Fe_2$ (320 Oe) as function of the ferromagnet materials. The other side, exchange force of each materials is 300 Oe when the reiteration layer number N is 3. In over number of reiteration layer 3, they maintained coercivity between 200 Oe and 300 Oe.