• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.24-27
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• 2000

Ferroelectric P $b_{0.99}$〔(Z $r_{0.6}$S $n_{0.4}$)$_{0.9}$ $Ti_{0.1}$〕$_{0.98}$N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on (L $a_{0.5}$S $r_{0.5}$)Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole％. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ were crystallized to a perovskite phase after rapid thermal annealing(RTA) The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 ％.0 ％.％.0 ％.0 ％.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.1-6
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• 2002

The preparation of 0.9PMN-0.1PT ceramics by the metal alkoxide method and the effect of excess $Mg(OC_2H_5)_2$, $Pb(CH_3COO)_2{\cdot}3H_2O$ are reported. The excess$ Mg(OC_2H5)_2$ addition signficantly affects the rate of perovskite phase formation in 0.9PMN-0.1PT ceramics. The sample by addition of 5 wt% excess $Mg(OC_2H5)_2$ sintered at $1150^{\circ}C$ for 1 hr obtained perovskite single phase and showed 98% of the theoretical density. The dielectric constant of the pellets sintered at $1150^{\circ}C$ was increased by the addition of 5 wt% excess $Mg(OC_2H_5)_2$ and had a maximum value of 15000 at 1 kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.370-375
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• 2001

PZT thin films (3500${\AA}$) ahve been prepared onto Pt/Ti/corning glass (1737) substrates with a RF magnetron sputtering system using Pb$\sub$1.50/(Zr$\sub$0.52/,Ti$\sub$0.48)O$_3$ ceramic target. We used two-step annealing techniques, PZT thin films were grown at a 300$^{\circ}C$ substrate temperature and then subjected to an RTA treatment. In case of 500$^{\circ}C$ RTA temperature show pyrochlore phase. The formation of Perovskite phase started above 600$^{\circ}C$ and PZT thin films generated (101) preferred orientation. As the RTA time and temperature increased, crystallization of PZT films were enhanced. The PZT capacitors fabricated at 650$^{\circ}C$ for 10 minutes RTA treatment showed remanent polarization 30 ${\mu}$C/$\textrm{cm}^2$, saturation polarization 42${\mu}$C/$\textrm{cm}^2$, coercive field 110kV/cm, leakage current density 2.83x10$\^$-7/A/$\textrm{cm}^2$, remanent polarization were decreased by 30% after 10$\^$9/ cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.286-293
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• 2000

In this paper we investigated the structural dielectric and piezoelectric properties of 0.03Pb(Sb$\_$1/2//Nb$\_$1/2/)-0.97Pb(Zr$\_$0.495//Ti$\_$0.505/)O$_3$+0.5 wt% excess PbO + wt% MnO(X=0, 0.1, 0.3, 0.5, 0.7) ceramics to develop the high-power piezoelectric transformer. The piezoelectric transformers with dimension of 27.5$\times$27.5$\times$2.5［mm$^3$］were fabricated and their electrical properties were measured. Maxima of piezoelectric properties such as electro-mechanical coupling factor of 0.534 and mechanical quality factor of 1487 were obtained for the PSN-PZT with 0.3wt% MnO. voltage step-up ratios of piezoelectric transformers at 500［Ω］and no load were 0.78, 12.82, respectively. The maximum efficiency of piezoelectric transformer was 98.6% at 800［Ω］. While the 14W fluorescent lamp were driven by the piezoelectric transformer for more than 20［min］, increment of temperature in the piezoelectric transformer was 7［$\^{C}$］.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1152-1157
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• 1998

The PZT films were deposited on the Pt/Ti/$SiO_2$/Si substrates using multi- target DC magnetron reactive sputtering. The perovskite single phase with the composition close to the stoichiometric one, was obtained even at high substrate temperature of $540^{\circ}C$ by 2-step method, which is that PZT film was deposited for a short time at low substrate temperature ($480^{\circ}C$) to promote the nucleation of perovskite phase by reducing the volatility of Pb oxide molecules, followed by the deposition at the elevated temperature to suppress the excess incorporation of Pb component in the PZT film. This two-step method, in combination with the RTA treatment, gives rise to good electrical properties of the deposited PZT films: remanent polarifaion,$18\mu$C/$\textrm{cm}^2$; coercive field, 45kV/cm; leakage current of 10$^{-4}$ A/$\textrm{cm}^2$ at high electric field of -500kV/cm.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.249-253
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• 1998

The influence of PbO additive on dielectric properties and sintering behavior of $(Pb_{0.46}Ca_{0.55})$ {$(Fe__1/2}Nb_{1/2}){0.9}Sn_{{0.1}$}$O_3$ ceramics has been investigated. The incorporation of a limited excess PbO ($\leq$2.0 wt. %) in the starting materials is quite beneficial for densification in the temperature range of 1150~$1175^{\circ}C$ in air. At a small doping level (0.8 wt. %) the ceramics prepared from powders calcined at $900^{\circ}C$ showed the best dielectric properties. The dielectric constants ($\varepsilon_r$) and Q.f were found to be 85.8~85.6 and 8530~8600 GHz, respectively. The temperature coefficient of resonant frequency ($\tau_f$) varied in the range of -2~4 $ppm/^{\circ}C$. Examination of the microstructure as well as analysis of the second phases in these materials revealed the presence of the pyrochlore-type phase which is detrimental to the dielectrics.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1488-1490
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• 1997

$(Pb_{1-x}La_x)Ti_{1-x/4}O_3$ (x=0, 0.02, 0.04, 0.06, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb,La)$TiO_3$ with excess Pb 10mol% was made and spin-coated on the Pt/Ti/$SiO_2$/Si substrate at 4000rpm for 30 seconds. Coated specimens were dried on the hot-plate at $350^{\circ}C$ for 10 min and sintered at $500{\sim}750^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6 at.%) thin films sintered at $650^{\circ}C$ were 884, $13.95{\mu}C/cm^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were $3.2{\times}10^{-8}\;C/cm^2K$, $1.02{\times}10^{-8}\;C{\cdot}cm/J$, $2.9{\times}10^{-11}\;C{\cdot}cm/J$, $0.29{\times}10^{-8}\;C{\cdot}cm/J$, respectively.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.249-252
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• 2011

We investigated the low firing of $Li_2CO_3$ added $0.2Pb(Mg_{1/3}Nb_{2/3})O_3$ - 0.3Pb($Fe_{1/2}Nb_{1/2}$) - $0.5Pb(Zr_{0.475}Ti_{0.525})O_3$ (PMN-PFN-PZT) ceramics and multilayer actuators (MLAs) using Ag inner electrodes. It was found that 0.1 wt% $Li_2CO_3$ was quite effective in lowering the sintering temperature of PMN-PFN-PZT ceramics from $1,100^{\circ}C$ down to $900^{\circ}C$ without deteriorating their piezoelectric ceramics ($d_{33}$ = 425 pC/N and $k_p$ = 61.9%). However, excess $Li_2CO_3$ up to 0.3 wt% brings about unwanted problems such as the formation of a $LiPbO_2$ secondary phase and subsequent degradation in the piezoelectric properties. Using 0.1 wt% $Li_2CO_3$ added PMN-PFN-PZT ceramics, MLAs with Ag inner electrodes were successfully fabricated, resulting in a normalized strain of 580 pm/V at an electric field of 1.5 kV/mm.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.242-247
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• 2000

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3(PNZST)$ thin films were deposited by RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3(LSCO)/Pt/Ti/SiO_2/Si$ substrate using a PNZST target with excess PbO of 10 mole%. The thin films deposited at substrate temperature of $500^{\circ}C$, and at RF power of 80W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at $650^{\circ}C$ for 10 seconds in air exhibited the good structures and electrical properties. The fabricated PNZST capacitor had a remanent polarization value of about $20\;{\mu}C/cm^2$ and coercive field of about 50 kV/cm. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.48-53
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• 2002

Ferroelectric $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{1-x}Ti_x]_{0.98}Nb_{0.02}O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3$(LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films with various composition ratio were investigated. The thin films deposited at the substrate temperature of $500^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA) at $650^{\circ}C$ for 10 seconds in air. A PNZST thin films with Ti of 10 mole% showed the good crystallinity and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about $20\;{\mu}C/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.