• Journal of Microbiology and Biotechnology
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• v.22 no.2
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• pp.256-263
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• 2012

A strain of bacterium producing antifungal antibiotic was isolated and identification of the strain was attempted. We could identify the bacterium as being a Bacillus sp., based on morphological observation, physiological characteristics, and 16S rDNA sequence analysis, thus leading us to designate the strain as Bacillus sp. AH-E-1. The strain showed potent antibiotic activity against phytopathogenic and human pathogenic fungi by inducing mycelial distortion and swelling and inhibiting spore germination. The antibiotic metabolite produced by the strain demonstrated excellent thermal and pH (2-11) stability, but was labile to autoclaving. From these results, we could find a broader antifungal activity of Bacillus genus. Isolation and characterization of the active agent produced by the strain are under progress.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.285-285
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• 2013

Recently, hexagonal boron nitride (h-BN), which is III-V compound of boron and nitride by strong covalent sp2 bonds has gained great interests as a 2 dimensional insulating material since it has honeycomb structure with like graphene with very small lattice mismatch (1.7%). Unlike graphene that is semi-metallic, h-BN has large band gap up to 6 eV while providing outstanding properties such as high thermal conductivity, mechanical strength, and good chemical stability. Because of these excellent properties, hBN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Low pressure and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) methods have been investigated to synthesize h-BN by using ammonia borane as a precursor. Ammonia borane decomposes to polyiminoborane (BHNH), hydrogen, and borazine. The produced borazine gas is a key material that is a used for the synthesis of h-BN, therefore controlling the condition of decomposed products from ammonia borane is very important. In this paper, we optimize the decomposition of ammonia borane by investigating temperature, amount of precursor, and other parameters to fabricate high quality monolayer h-BN. Synthesized h-BN is characterized by Raman spectroscopy and its absorbance is measured with UV spectrophotometer. Topological variations of the samples are analyzed by atomic force microscopy. Scanning electron microscopy and Scanning transmission Electron microscopy are used for imaging and analysis of structures and surface morphologies.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.5
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• pp.97-105
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• 2008

The micro capacitors are passive elements necessary to electronic circuits and wireless portable PAN(personal area network) and Mobile Communications device modules in the baseband circuits in combination with another passive and active devices. As capacitance is proportionally increased with dielectric constant and electrode areas, in addition, inversely decreased the thickness of the dielectric material, thus thin film capacitors are generally seen as a preferable means to achieve high performance and thin film capacitors are used in a variety of functional circuit devices. In this paper, propose dielectric material as AIN(Aluminium nitride) to make micro thin film capacitor, and this capacitor has the MIM(metal-insulator-metal) structure. AIN thin films are widespread applied because they had more excellent properties such as chemical stability, high thermal conductivity, electrical isolation and so on. In addition, AIN films show low frequency response for baseband signal ranges, I-V and C-V electrical characterization of a thin film micro capacitor. The above experimental test and estimated results demonstrate that the thin film capacitor has sufficient and efficient functional performance to be the baseband range frequency of general electronics circuit and passive device applications.

• International Journal of Industrial Entomology and Biomaterials
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• v.45 no.2
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• pp.56-69
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• 2022

Silk is a unique natural biopolymer with outstanding biocompatibility, high mechanical strength, and superior optical transparency. Due to its excellent properties, silk has been widely reported as an ideal biomaterial for several biomedical applications. Recently, fluorescent silk protein, a variant of native silk, has been reported as a biophotonic material with the potential for bioimaging and biosensing. Despite the realization of fluorescent silk, the traditional degumming process of fluorescence silk is crude and often results in fluorescence loss. The loss of fluorescent properties is attributed to the sensitivity of silk fibroin to temperature and solvent concentration during degumming. However, there is no comprehensive information on the influence of these processing parameters on fluorescence evolution and decay during fluorescent silk processing. Therefore, we conducted a spectroscopic study on fluorescence decay as a function of temperature, concentration, and duration for fluorescent silk cocoon degumming. Sodium carbonate solution was tested for degumming the fluorescent silk cocoons with different concentrations and temperatures; also, sodium carbonate solution is combined with Alcalase enzyme and triton x-100 to find optimal degumming conditions. Additionally, we conducted a molecular dynamics study to investigate the fundamental effect of temperature on the stability of the fluorescent protein. We observed degumming temperature as the prime source of fluorescent intensity reduction. From the MD study, fluorescence degradation originated from the thermal agitation of fluorescent protein Cα atoms and fluctuations of amino acid residues located in the chromophore region. Overall, degumming fluorescent silk with sodium carbonate and Alcalase enzyme solution at 25 ℃ preserved fluorescence.

• Journal of the Korean Institute of Gas
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• v.26 no.5
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• pp.16-21
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• 2022

The reaction rate of a catalyst for producing hydrogen using the methanol steam reforming reaction was studied. It was prepared by impregnating copper, which is often used in methanol synthesis, as the main active metal, using hydrotalcite, which has excellent porosity and thermal stability, high specific surface area, weak Lewis acid point, and basicity, as a support. Activation energy and Pre-exponential factors were identified. In this study, the activation energy of the hydrotalcite catalyst impregnated with 20 wt% copper was calculated to be 97.4 kJ/mol and the Pre-exponential was 5.904 × 10¹⁰. Process simulation was performed using the calculated values and showed a similar tendency to the experimental results.

• Journal of IKEEE
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• v.27 no.1
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• pp.19-24
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• 2023

Since silicon having a band gap energy of about 1.12 eV are limited to a maximum operating temperature of less than 250 ℃, the sample with MIS structure based on the SiC substrate of wide-band gap energy was manufactured and the hydrogen response characteristics at high temperatures were investigated. The dielectric layer applied here is a tantalum oxide layer that is highly permeable to hydrogen gas and shows stability at high temperatures. It was formed by RTO at a temperature of 900 ℃ with tantalum. The thickness, depth profiles, and leakage current of the tantalum oxide layer were analyzed through TEM, SIMS, and leakage current characteristics. For the hydrogen gas response characteristics, the capacitance change characteristics were investigated in the temperature range from room temperature to 400 ℃ for hydrogen gas concentrations from 0 to 2,000 ppm. As a result, it was confirmed that the sample exhibited excellent sensitivity and a response time of about 60 seconds.

• Membrane Journal
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• v.33 no.3
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• pp.137-147
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• 2023

In this study, Br-PPO was developed by applying additive organic particles through a suspension polymerization synthesis method. The anion exchange membrane fuel cell system performance was evaluated using it to an anion exchange membrane. To improve the performance, organic ion exchange particles were prepared and added to the anion exchange membrane. Chemical structure analysis and synthesis were determined through FT-IR and NMR, and tensile strength and thermal stability were measured through TGA and UTM to determine whether it could be driven. Before the anion exchange membrane fuel cell test, the performance was evaluated by measuring the ion conductivity and ion exchange capacity. Finally, the Br-PPO-TMA-SDV (0.7%) anion exchange membrane with excellent ion conductivity and ion exchange capacity was introduced into the fuel cell system. Its performance was compared with FAA-3-50, a commercial membrane, to determine whether it could be introduced into a fuel cell system.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

• Journal of the Korean Society of Propulsion Engineers
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• v.21 no.1
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• pp.1-7
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• 2017

As a part of studies to lower the infrared (IR) emissivity from the surface of exhaust nozzle in the turbo jet engine, stainless steel plate was coated with copper particle/meta-aramid resin composites and the IR emissivity of the plate were investigated. Binders of filler particles based on synthetic polymers generally undergo thermal decomposition before $300^{\circ}C$. It was found that the meta aramid resin was thermally stable after the test at $320^{\circ}C$, confirming the excellent thermal stability. Contents of copper particles in the composites were varied from 0 to 70% by volume. It was observed that the copper particle/meta aramid resin composites showed good adhesion after the tests at $320^{\circ}C$. The specimen coated with the composite containing 50 vol% of copper particles showed the lowest IR emissivity, 0.6, at $320^{\circ}C$.