• Korean Chemical Engineering Research
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• 제52권2호
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• pp.272-277
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• 2014

본 연구는 인쇄회로기판(PCB) 제조 시 에칭공정에서 발생되는 구리이온($Cu^{+2}$)을 고농도로 함유한 황산 폐에칭액을 NF 막분리법을 사용하여 에칭액 회수와 구리이온 처리를 효율적으로 수행하기 위한 NF 막여과 공정의 운전조건을 설정하기 위한 기본 자료를 확보하는데 있다. 이를 위해 미국 Koch사의 SelRO MPS-34 4040 NF 막을 대상으로 구리이온을 고농도(5~30 g/L)로 함유한 모의 황산 폐에칭액의 cross-flow 나노여과 실험을 수행하여 투과 플럭스와 구리이온의 총괄 배제도를 측정하였다. 이 결과 투과 플럭스는 황산 폐에칭액 내 구리이온의 농도가 증가할수록, 황산 폐에칭액의 pH가 낮을수록 작아졌으며, 그 값은 최소 $4.5L/m^2{\cdot}h$에서 최대 $23L/m^2{\cdot}h$이었다. 황산 폐에칭액 내 구리이온의 총 배제도는 구리이온의 농도가 클수록, 용액의 pH가 낮을수록 그리고 폐에칭액의 순환유량이 작을수록 낮아졌으며, 황산 폐에칭액의 pH가 1 이상인 상태에서 70% 이상의 구리이온 배제가 가능하였다. NF 막을 12개월 동안 황산용액 내에 보관하여도 투과 플러스 와 구리이온 배제도의 유의한 변화가 없어 SelRO MPS-34 막모듈을 강산 조건에서 1년이상 막모듈의 교체 없이 산성 폐에칭액 처리에의 사용이 가능하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.398-400
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• 1998

In this paper, the etching studies for n-GaN were carried out using the wet chemical, the photo-enhanced-chemical, and the electro-chemical etching methods. The experimental results show that n-GaN is etched in diluted NaOH solution at room temperture and the etched thickness of NaOH and electron concentrations. Te etching rate of n-GaN samples with n.simeq.1*10$^{19}$ cm$^{-3}$ were used to compare the photo-enhanced-chemical etching with the electrochemical etching methods. The removed thickness was 680.angs./25min by the electrochemical etching methods. The removed thickness was 680 .angs./25min by the electrochemical etching method ad 784.angs./25min by the photoenhanced-chemical etching method. The patterns are 100.mu.m*100.mu.m rectangulars covered with SiO$_{2}$film. It is shown that the profile of etched side-wall of the pattern is vertical without dependance of the n-GaN orientations.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.117-122
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• 2001

In this paper, we report on photoelectrochemical etching process of 6H-SiC semiconductor wafer. The etching was performed in two-step process; anodization of SiC surface to form a deep porous layer and thermal oxidation followed by an HF dip. Etch rate of about 615${\AA}$/min was obtained during the anodization using a dilute HF(1.4wt% in H$_2$O) electrolyte with the etching potential of 3.0V. The etching rate was increased with the bias voltage. It was also found out that the adition of appropriate portion of H$_2$O$_2$ into the HF solution improves the etching rate. The etching process resulted in a higherly anisotropic etching characteristics and showed to have a potential for the fabrication of SiC devices with a novel design.

• 자원리싸이클링
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• 제14권3호
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• pp.48-54
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• 2005

FeCl$_3$용액으로 니켈프레임을 에칭하는 과정에서 발생한 폐액으로부터 철과 니켈을 분리, 회수하기 위해 용매추출과 환원실험을 수행했다. 추출제로 Alamine336을 사용하여 철과 니켈의 분리가 가능했으며, 유기상과 에칭폐액의 부피비가 7이상의 조건에서 99%의 철의 추출율을 얻었다. 0.01 M농도의 염산용액을 탈거액으로 사용하여 탈거액과 유기상의 부피비가 7인 조건에서 99%의 철 탈거율을 얻었다. 추출여액의 pH가 10.5이고 반응온도가 100$^{\circ}C$인 조건에서 환원제로 히드라진을 첨가하여 99%의 순도를 지닌 니켈 금속 분말을 얻었다. 용매추출과 화학환원을 이용하여 에칭폐액으로부터 니켈금속을 회수하고, 에칭액을 재생할 수도 있는 공정을 제시하였다.

• 한국자원리싸이클링학회:학술대회논문집
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• 한국자원리싸이클링학회 2004년도 춘계임시총회 및 제23회 학술대회
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• pp.218-226
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• 2004

Solvent extraction and stripping experiments were conducted to separate iron from a spent $FeCl_3$ etching solution containing nickel. In the extraction, PC88A, MIBK and Alamine336 were tested as an extractant in various diluents. Alamine336 salt in toluene led to the highest extraction percentage of iron. Stripping percentage of iron from the loaded organic by Alamine336 increased with decreasing HCl conentration of stripping solution and with increasing volume ratio of aqueous to organic. In the operation of bench scale mixer-settler, 7 extraction stage with 1.0M Alamine336 salt in toluene and 10 stripping stage with 0.01M HCl solution resulted in a stripped solution with 133g/L of iron and in a raffinate with most of nickel together with a small amount of iron when the flow rate ratio of organic to aqueous was 7.

• 한국세라믹학회지
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• 제43권1호
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• pp.33-37
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• 2006

For producing the fine ribs structure of plasma display panel, the metal ions of barrier materials during the etching process should be understood on the etching mechanism with etching conditions. Etching was done on bulk glasses of the $BaO_B_2O_3-ZnO$ system with $HNO_3$ solution at $40^{\circ}C$. The surface structure of glasses and ion dissolution were analyzed by ICP (Inductive Coupled Plasma measurement). The structure and surface of the etched bulk glass were investigated by using scanning electron microscopy and nanoindenter. As a result, Ba (3-35 ppm/min) and Zn (2-27 ppm/min) ions as major components were leached in the solution and the leached layers were found to be phosphor-rich surface layers. A decrease of the bridge oxygen and relative increase of non bridge oxygen in the etched glass were found by X-ray photoelectron spectroscopy.

• 한국세라믹학회지
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• 제48권1호
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• pp.80-85
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• 2011

The crystallization behavior and microstructural change of the glass-ceramics were analyzed as a function of concentration and etching time of the HF solution in order to enhance the degree of crystallinity induced by heterogeneous nucleation of glass of bottom ash containing 15 wt% $Li_2O$. The nucleation site seemed to be generated where the Si ion was eluted. The main crystal phases in the glass-ceramics fabricated in this study were $\beta$-spodumene and $Li_2SiO_3$. The specimens etched with HF of 0.5 vol% within 0~60 seconds showed increased crystalline peak intensities in XRD pattern with etching time compared to no-etched one. Also the crystal size and crystal occupancy in the glass matrix observed by SEM were increased with etching time. For the glass-ceramics etched with 1.0 and 2.0 vol% HF solution, the etching time over 10 s was not effective to increase the crystallinity. From this study, it was found that the glass-ceramics with the higher crystallinity could be obtained by HF-etching followed by heat treatment process, even though the nucleating agent or 2-stages thermal treatment process were not used.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.339-339
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• 2010

Photo-assisted wet chemical etching of GaN thin film was studied using KOH based solutions. A $2{\mu}m-2{\mu}m$ titanium line-and-space pattern was used as a etching mask. It is found that the etching characteristics of the GaN thin film is strongly dependent on the pattern direction by unisotropic property of KOH based solution. When the pattern was aligned to the [$11\bar{2}0$] directions, ($10\bar{1}n$)-facet is revealed constructing V-shaped sidewalls.

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1218-1223
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• 2004

Porous silicon materials have been shown to have bright prospects for applications in light emitting, solar cell, as well as light- and chemical-sensing devices. In this report, structures of porous silicon prepared by anodic etching in HF-based solution with various etching times were studied in detail by Atomic Force Microscopy and Small Angle X -ray Scattering technique using the high energy beam line at Pohang Light Source in Korea. The results showed the coexistence of the various pores with nanometer and submicrometer scales. For nanameter size pores, the mixed ones with two different shapes were identified: the larger ones in cylindrical shape and the smaller ones in spherical shape. Volume fractions of the cylindrical and the spherical pores were about equal and remained unchanged at all etching times investigated. On the whole uniform values of the specific surface area and of the size parameters of the pores were observed except for the larger specific surface area for the sample with the short etching time. The results implies that etching process causes the inner surfaces to become smoother while new pores are being generated. In all SAXS data at large Q vectors, Porod slope of -4 was observed, which supports the fact that the pores have smooth surfaces.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1974-1976
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• 1996

An electrostatically driven comb actuator with $525{\mu}m$ height was fabricated using (110) Si anisotropic etching in the Potassium Hydroxide(KOH) solution. The etch-rate and etch-rate ratio are strongly dependent on the weight % and temperature of KOH solution. We developed the optimal condition for the anisotropic etching on (110) wafer with varying these conditions. The force that the comb-drive actuator generates is inversely proportional to the distance of gap and proportional to the height of the comb electrodes. The electrodes must have the high aspect ratio. The (110) Si anisotropic etching is very useful to get a high aspect ratio structure.