• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.180-182
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• 2009

Two different wet etching solutions, NaOH 40% and Acid, were used for etching in tri-crystalline Silicon(Tri-Si) solar cell fabrication. The wafers etched in NaOH40% solution showed higher reflectance compared to the wafers etched in Acid solution after $SiN_x$ deposition. In light current-voltage results, the cells etched in Acid solution exhibited higher short circuit current and open circuit voltage than those of the cells etched in NaOH 40% solution. We have obtained 16.70% conversion efficiency in large area($156cm^2$) Tri-Si solar cells etched in Acid solution.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.319.1-319.1
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• 2016

Recently, the Al-doped ZnO (ZnO:Al) films are intensively used in thin film a-Si solar cell applications due to their high transmittance and good conductivity. The textured ZnO:Al films are used to enhance the light trapping in thin film solar cells. The wet etch process is used to texture ZnO:Al films by dipping in diluted acidic solutions like HCl or HF. During that process the glass substrate could be damaged by the acidic solution and it may be difficult to apply it for the inline mass production process since it has to be done outside the chamber. In this paper we report a new technique to control the surface morphology of RF-sputtered ZnO:Al films. The ZnO:Al films are textured with vaporized HF formed by the mixture of HF and H2SiO3 solution. Even though the surface of textured ZnO:Al films by vapor etching process showed smaller and sharper surface structures compared to that of the films textured by wet etching, the haze value was dramatically improved. We achieved the high haze value of 78% at the wavelength of 540 nm by increasing etching time and HF concentration. The haze value of about 58% was achieved at the wavelength of 800 nm when vapor texturing was used. The ZnO:Al film texture by HCl had haze ratio of about 9.5 % at 800 nm and less than 40 % at 540 nm. In addition to low haze ratio, the texturing by HCl was very difficult to control etching and to keep reproducibility due to its very fast etching speed.

• 한국재료학회지
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• 제29권3호
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• pp.155-159
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• 2019

Surface plasmon resonance is the resonant oscillation of conduction electrons at the interface between negative and positive permittivity material stimulated by incident light. In particular, when light transmits through the metallic microhole structures, it shows an increased intensity of light. Thus, it is used to increase the efficiency of devices such as LEDs, solar cells, and sensors. There are various methods to make micro-hole structures. In this experiment, micro holes are formed using a wet chemical etching method, which is inexpensive and can be mass processed. The shape of the holes depends on crystal facets, temperature, the concentration of the etchant solution, and etching time. We select a GaAs(100) single crystal wafer in this experiment and satisfactory results are obtained under the ratio of etchant solution with $H_2SO_4:H_2O_2:H_2O=1:5:5$. The morphology of micro holes according to the temperature and time is observed using field emission - scanning electron microscopy (FE-SEM). The etching mechanism at the corners and sidewalls is explained through the configuration of atoms.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1998년도 춘계학술발표회 초록집
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• pp.135-135
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• 1998

• 한국결정성장학회지
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• 제8권2호
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• pp.249-254
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• 1998

GaN계 재료의 습식 화학식각 특성과 광 화학 및 전기 화학 및 전기 화학 습식식각 특성을 연구하였다. n형 GaN는 상온에서 NaOH 수용액에 식각되었으며 식각두께는 식각시간에 선형적으로 증가하였다. 또 광 조사 및 전기 화학을 가할 경우 식각율은 수배로 증가하였으며, 식각율은 $1{\times}10^{19};cm^{-3}$의 전자농도를 갖는 시료에서 광 조사시 최대 164${\AA}$/min을 얻었다. n-GaN의 식각율은 GaN의 전자농도에 크게 의존하는 특성을 나타내었으며 이러한 식각과정을 논의하였다. $SiO_2$ 박막으로 덮여진 100${\mu}m{\times}100{\mu}m$ 모양의 옆 식각면은 방향성을 갖지 않고 수직하였으며, 넓은 면적에서 매우 평탄하였다.

• 멤브레인
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• 제19권4호
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• pp.317-323
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• 2009

본 연구는 전자 및 반도체 산업의 각종 에칭공정에서 발생되는 중금속 함유 산성 폐에칭액을 NF 막분리법을 이용하여 에칭액 회수와 중금속 처리를 효율적으로 수행하기 위한 NF 막공정의 운전조건을 설정하기 위한 기본 자료를 확보하는데 있다. 이를 위해 3가지 종류의 상용 NF 막(General Electric Co. Duraslick NF-4040 막, Dow Co. Filmtec LP-4040 막 및 Koch Co. SelRO MPS-34 4040 막)을 대상으로 $Pb^{+2}$ 중금속을 함유한 모의 질산 폐에칭액의 회분식(dead-end) 막여과 실험을 수행하여 폐에칭액의 투과 플럭스와 $Pb^{+2}$ 중금속 이온의 총괄 배제도를 측정하여 폐에칭액 처리에 우수한 NF 막을 선정하였다. 실험결과 질산용액에의 막 보관기간이 길수록, 질산용액의 pH가 낮을수록 산에 의한 막의 손상이 심해졌으며, 질산에 의한 막의 손상은 SelRO MPS-34 4040 < Duraslick NF-4040 < Filmtec LP-4040 막의 순서로 심하게 일어났다. 또한 질산용액에의 막 보관기간이 길수록, 질산용액의 pH가 낮을수록 $Pb^{+2}$ 이온의 배제도가 낮아졌으며, 배제도 값은 Duraslick NF-4040 막의 경우에는 95% 수준의 초기 배제도 값에서 질산용액에의 4달 보관 후에는 20% 수준으로, SelRO MPS-34 4040 막의 경우에는 초기 85% 수준에서 4달 후 65% 수준으로, Filmtec LP-4040 막의 경우에는 초기 90% 수준에서 4달 후 10% 이하 수준으로까지 감소하였다. 3종류의 상용 NF 막 중 내산성 용도로 개발된 SelRO MPS-34 4040 막이 중금속 함유 산성 폐에칭액의 재생에 가장 적합하였다.

• 자원리싸이클링
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• 제26권2호
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• pp.18-24
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• 2017

$FeCl_3$ 용액은 금속의 에칭용액으로 사용되며, 사용 후 발생하는 $FeCl_3$ 에칭폐액은 환경적, 경제적으로 문제를 지니기 때문에 에칭액을 재사용할 필요가 있다. 본 연구에서는 $FeCl_2$ 용액에 HCl을 첨가 한 후, 산화제로 $H_2O_2$를 첨가하여 용액 내 $Fe^{2+}$를 산화시켰으며, 산화과정에서 산화-환원전위(ORP)와 산화율 간의 관계를 조사하였다. ORP는 HCl과 $H_2O_2$의 농도가 증가함에 따라 증가하였으며, 산화가 진행되면서 점차 감소하여 Nernst 식과 일치하는 결과를 보였다. 또한 충분한 양의 HCl과 $H_2O_2$를 첨가하였을 경우, 약 99% 이상 산화가 이루어짐을 알 수 있었다.

• 한국재료학회지
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• 제20권11호
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• pp.617-622
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• 2010

We have studied methods to save Si source during the fabrication process of crystalline Si solar cells. One way is to use a thin silicon wafer substrate. As the thickness of the wafers is reduced, mechanical fractures of the substrate increase with the mechanical handling of the thin wafers. It is expected that the mechanical fractures lead to a dropping of yield in the solar cell process. In this study, the mechanical properties of 220-micrometer-solar grade Cz p-type monocrystalline Si wafers were investigated by varying saw-damage etching conditions in order to improve the flexural strength of ultra-thin monocrystalline Si solar cells. Potassium hydroxide (KOH) solution and tetramethyl ammonium hydroxide (TMAH) solution were used as etching solutions. Etching processes were operated with a varying of the ratio of KOH and TMAH solutions in different temperature conditions. After saw-damage etching, wafers were cleaned with a modified RCA cleaning method for ten minutes. Each sample was divided into 42 pieces using an automatic dicing saw machine. The surface morphologies were investigated by scanning electron microscopy and 3D optical microscopy. The thickness distribution was measured by micrometer. The strength distribution was measured with a 4-point-bending tester. As a result, TMAH solution at $90^{\circ}C$ showed the best performance for flexural strength.

• Restorative Dentistry and Endodontics
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• 제45권1호
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• pp.6.1-6.8
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• 2020

Objectives: This study investigated the effects of a hydrofluoric acid (HA; solution of hydrogen fluoride [HF] in water)-based smart etching (SE) solution at an elevated temperature on yttria-stabilized tetragonal zirconia polycrystal (Y-TZP) ceramics in terms of bond strength and morphological changes. Materials and Methods: Eighty sintered Y-TZP specimens were prepared for shear bond strength (SBS) testing. The bonding surface of the Y-TZP specimens was treated with 37% phosphoric acid etching at 20℃-25℃, 4% HA etching at 20℃-25℃, or HA-based SE at 70℃-80℃. In all groups, zirconia primers were applied to the bonding surface of Y-TZP. For each group, 2 types of resin cement (with or without methacryloyloxydecyl dihydrogen phosphate [MDP]) were used. SBS testing was performed. Topographic changes of the etched Y-TZP surface were analyzed using scanning electron microscopy and atomic force microscopy. The results were analyzed and compared using 2-way analysis of variance. Results: Regardless of the type of resin cement, the highest bond strength was measured in the SE group, with significant differences compared to the other groups (p < 0.05). In all groups, MDP-containing resin cement yielded significantly higher bond strength values than MDP-free resin cement (p < 0.05). It was also shown that the Y-TZP surface was etched by the SE solution, causing a large change in the surface topography. Conclusions: Bond strength significantly improved when a heated HA-based SE solution was applied to the Y-TZP surface, and the etched Y-TZP surface was more irregular and had higher surface roughness.

• Korean Chemical Engineering Research
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• 제50권2호
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• pp.211-216
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• 2012

염화제이철 수용액에 의한 스테인레스 강판의 식각반응에 관한 연구를 수행하였다. 식각액 교반속도, 식각온도, $Fe^{3+}$ 이온 농도, 식각액의 유리산도 및 비중 등 여러 공정변수가 식각속도에 미치는 영향에 대해 조사하였고, 그 결과, AK(aluminum-killed) 철, 크롬(chlomium) 강, 그리고 스테인레스 강(STS430J1L 합금)의 식각반응이 1차 반응식을 잘 따름을 알 수 있었다. 또한 식각액의 피로도(fatigue ratio)가 16% 이하로 유지되면 식각액 내에 슬러지가 발생하지 않으며, 식각된 강판의 표면거칠기 또한 좋아짐을 알 수 있었다. 본 연구에서 조사한 범위 내에서는, 식각액의 보메(Baume)가 증가하면 식각속도는 감소하나 유리산도가 식각속도에 미치는 영향은 미비함을 알 수 있었다. 한편 본 연구의 실험결과는 공정모델링을 통해 유도된 식각속도식의 계산결과와 잘 일치함을 알 수 있었다.