• 한국재료학회지
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• 제28권12호
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• pp.709-713
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• 2018

To improve the etch rate of $Si_3N_4$ thin film, $H_2SiF_6$ is added to increase etching rate by more than two times. $SiO_3H_2$ is gradually added to obtain a selectivity of 170: 1 at 600 ppm. Moreover, when $SiO_3H_2$ is added, the etching rate of the $SiO_2$ thin film increases in proportion to the radius of the wafer. In $Si_3N_4$ thin film, there is no difference in the etching rate according to the position. However, in the $SiO_2$ thin film, the etching rate increases in proportion to the radius. At the center of the wafer, the re-growth phenomenon is confirmed at a specific concentration or above. The difference in etch rates of $SiO_2$ thin films and the reason for regrowth at these positions are interpreted as the result of the flow rate of the chemical solution replaced with fresh solution.

• Tribology and Lubricants
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• 제39권6호
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• pp.244-249
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• 2023

This paper presents a comprehensive analysis of the impact of surface roughness on the friction and wear properties of SUS 321, an austenitic stainless steel variant produced using the laser powder bed fusion (LPBF) technique, which is a prevalent additive manufacturing method. After the LPBF fabrication, the specimens go a heat treatment process aimed at alleviating residual stress. Subsequently, they are polished extensively to achieve a refined and smooth surface. To deliberately introduce controlled variations in surface roughness, an etching process is employed. This multi-step method encompassed primary etching in a 3M hydrochloric acid solution, followed by secondary etching in a 35 wt% ferric chloride solution, with varying durations applied to different specimens. A comprehensive evaluation of the surface characteristics ensued, employing precise techniques such as surface roughness measurements and meticulous assessments of water droplet contact angles. Following the surface treatment procedures, a series of friction tests are performed to explore the tribological behavior of the etched specimens. This in-depth investigation reached its peak by revealing valuable insights. It clarified a strong correlation between intentionally altered surface roughness, achieved through etching processes, and the resulting tribological performance of LPBF-fabricated SUS 321 stainless steel. This significantly advances our grasp of material behavior in tribological applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• 한국정보전자통신기술학회논문지
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• 제9권2호
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• pp.155-161
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• 2016

본 논문은 광 도움 전기화학적 식각으로 나노갭 트렌치 구조를 형성하고 이를 이용해서 정전 용량형 가속도 센서를 설계하고 제작한 것에 대한 연구이다. 정전 용량형 가속도 센서의 감도를 증가시키기 위해 스프링에 연결된 관성질량과 연결된 전극과 감지전극 사이의 간격을 좁혀 커패시턴스의 변화량을 증가시키고 있다. 이를 실현시키기 위해 광-도움 전기화학적 식각을 이용하였고 ANSYS 프로그램을 이용하여 구조해석을 실시하여 $1mm{\times}mm$ 크기의 초소형 정전 용량형 가속도 센서를 설계하였다. 광-도움 전기화학적 식각의 실험 변수인 빛의 세기, dc 전압, 용액의 조성, 피치 등을 고려하여 가속도 센서는 제작 되었다. 최적 공정 조건은 dc전압 2V, Blue LED 20mA, 49wt%HF:DMF:D.I.Water=1:20:10, 피치 $20{\mu}m$이며, 폭 344nm, 깊이 $11.627{\mu}m$의 나노갭 트렌치가 형성되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.86-86
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• 2012

The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

• 공업화학
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• 제27권1호
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• pp.101-109
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• 2016

기존의 불산을 대체할 수 있는 평판디스플레이용 유리의 식각용액을 개발하고자 진행하였다. 본 연구과정을 통해 제안된 불산 대체 유리 식각용액은 산성불화암모늄 18~19 wt%, 황산 24~25 wt%, 물 45~46 wt%, 황산염 4~5 wt%, 규불화염 7~8 wt%로 구성되며, 사용된 식각용액의 재사용 시 보충용액으로서 해당조성의 식각용액을 전체의 5% 되게 보충함으로서 효과적으로 지속적으로 재사용이 가능하다. 개발된 식각용액은 $30^{\circ}C$에서 $5{\mu}m/min$ 이상의 식각속도를 나타내며, 반복 재사용 시에도 초기 식각액 전체 질량의 5% 추가로 보충함으로서 식각속도는 $0.1{\mu}m/min$ 이하로 편차로 식각속도가 안정적으로 유지되었다. 이 식각공정을 통해 얻어진 평판디스플레이용의 유리의 표면 상태는 Pin hole, Dimple 등이 발견되지 않는 양호한 품질을 나타내었다.

• Corrosion Science and Technology
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• 제8권3호
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• pp.93-102
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• 2009

The direct-current electroetching of high purity aluminum in hot aqueous-chloride solution produces a high density of micrometer-wide tunnels whose walls are made up of the {100} planes and penetrate aluminum in the <100> directions at rates of micrometer per second. In the process of the alternating-current pitting of aluminum, cathodic polarization plays an important role in the nucleation and growth of the pits during the subsequent polarization. The direct-current tunnel etching and alternating-current etching of aluminum are basically related to the formation of poorly crystallized or amorphous passive films. If the passive film forms on the wall, a natural misfit exists between the film and the aluminum substrate, which in turn gives rise to stress in both the film and the substrate. Even though the amorphous films do not have directed properties, their stresses are influenced by the substrate orientation. The films on elastically soft substrate are likely to be less stressed and more stable than those on elastically hard substrate. The hardest and softest planes of aluminum are the {111} and {100} planes, respectively. Therefore, the films on the {111} substrates are most likely to be attacked, and those on the {100} substrates are least likely to be attacked. For the tunnel etching, it follows that the tunnel walls tend to consist of the {100} planes. Meanwhile, the tunnel tip, where active corrosion takes place, tend to be made of four closely packed {111} planes in order to minimize the surface energy, which gives rise to the <100> tunnel etching.

• 한국정보통신학회논문지
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• 제14권6호
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• pp.1465-1468
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• 2010

습식 식각은 식각용액으로서 화학용액을 사용하는 공정으로 반응물이 기판표면에서 화학반응을 일으켜 표면을 식각하는 과정이다. 습식 식각 시 수${\mu}m$의 해상도를 얻기 위해서는 그 부식액의 조성이나, 에칭시간, 부식액의 온도 등을 고려하여야 한다. 본 실험에서 사용한 금속은 Cr, Al, ITO 로 모두 DC sputter 방법을 사용해서 증착하여 사용하였다. Cr박막은 $1300{\AA}$ 정도의 두께를 사용하였고, ITO (Indium Tin Oxide) 박막은 가시광 영역에서 투명하고 (80% 이상의 transmittance), 저저항 (Sheet Resistance : $50\;{\Omega}/sq$ 이하) 인 박막을 사용하였으며, 신호선으로 주로 사용되는 Al등의 증착조건에 따른 wet etching 특성을 조사하였다.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.61-64
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• 2007

V-groove device was fabricated for precision coupling of planar optical splitter and optical fibers. V-groove was made through select wet etching of Si wafer by using KOH solution. Etching rate and surface roughness were checked, changing KOH composition(10, 20, 30, 33, 40 wt.%) and etching temperature (50, 60, 70, $80^{\circ}C$) to fabricate V-groove device effectively. Etching rate was the fastest as $1.84\;{\mu}m/min$ in case of etching by 20 wt.% KOH on $80^{\circ}C$, surface roughness was the best in case of etching by 33 wt. % KOH on $80^{\circ}C$.