• Restorative Dentistry and Endodontics
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• 제40권3호
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• pp.202-208
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• 2015

Objectives: This study determined the effect of the air-stream application time and the bonding technique on the dentin bond strength of adhesives with different solvents. Furthermore, the content and volatilization rate of the solvents contained in the adhesives were also evaluated. Materials and Methods:Three adhesive systems with different solvents (Stae, SDI, acetone; XP Bond, Dentsply De Trey, butanol; Ambar, FGM, ethanol) were evaluated. The concentrations and evaporation rates of each adhesive were measured using an analytical balance. After acid-etching and rinsing, medium occlusal dentin surfaces of human molars were kept moist (conventional) or were treated with 10% sodium hypochlorite for deproteinization. After applying adhesives over the dentin, slight air-stream was applied for 10, 30 or 60 sec. Composite cylinders were built up and submitted to shear testing. The data were submitted to ANOVA and Tukey's test (${\alpha}=0.05$). Results: Stae showed the highest solvent content and Ambar the lowest. Acetone presented the highest evaporation rate, followed by butanol. Shear bond strengths were significantly affected only by the factors of 'adhesive' and 'bonding technique' (p < 0.05), while the factor 'duration of air-stream' was not significant. Deproteinization of dentin increased the bond strength (p < 0.05). Stae showed the lowest bond strength values (p < 0.05), while no significant difference was observed between XP Bond and Ambar. Conclusions: Despite the differences in content and evaporation rate of the solvents, the duration of air-stream application did not affect the bond strength to dentin irrespective of the bonding technique.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 춘계학술발표회 초록집
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• pp.41-41
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• 2003

텅스텐(W)은 높은 thermal stability 와 process compatibility 및 우수한 corrosion r resistance 둥으로 integrated circuit (IC)의 gate 및 interconnection 둥으로의 활용이 대두되고 있으며, 차세대 thin film transistor liquid crystal display (TFT-LCD)의 gate 및 interconnection m materials 둥으로 사용되고 았다. 그러나, 이러한 장점을 가지고 있는 팅스텐 박막이 실제 공정상에 적용되가 위해서는 건식 식각이 주로 사용되는데, 이는 wet chemical 을 이용한 습식 식각을 사용할 경우 낮은 etch rate, line width 의 감소 및 postetch residue 잔류 동의 문제가 발생하기 때문이다. 또한 W interconnection etching 을 하기 위해서는 높은 텅스텐 박막의 etch rate 과 하부 layer ( (amorphous silicon 또는 poly-SD와의 높은 etch selectivity 가 필수적 이 라 할 수 있다. 그러 나, 지금까지 연구되어온 결과에 따르면 텅스탠과 하부 layer 와의 etch selectivity 는 2 이하로 매우 낮게 관찰되고 았으며, 텅스텐의 etch rate 또한 150nm/min 이하로 낮은 값을 나타내고 있다. 따라서 본 연구에서는 halogen-based inductively coupled plasma 를 이용하여 텅스텐 박막 식각시 여러 가지 첨가 가스에 따른 높은 텅스탠 박막의 etch rate 과 하부 layer 와의 높은 etch s selectivity 를 얻고자 하였으며, 그에 따른 식각 메커니즘에 대하여 알아보고자 하였다. $CF_4/Cl_2$ gas chemistry 에 첨 가 가스로 $N_2$와 Ar을 첨 가할 경 우 텅 스텐 박막과 하부 layer 간의 etch selectivity 증가는 관찰되지 않았으며, 반면에 첨가 가스로 $O_2$를 사용할 경우, $O_2$의 첨가량이 증가함에 따라 etch s selectivity 는 계속적으로 증가렴을 관찰할 수 있었다. 이는 $O_2$ 첨가에 따라 형성되는 WOF4 에 의한 텅스텐의 etch rates 의 감소에 비하여, $Si0_2$ 등의 형성에 의한 poly-Si etch rates 이 더욱 크게 감소하였기 때문으로 사료된다. W 과 poly-Si 의 식각 특성을 이해하기 위하여 X -ray photoelectron spectroscopy (XPS)를 사용하였으며, 식각 전후의 etch depth 를 측정하기 위하여 stylus p pmfilometeT 를 이용하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.78-79
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• 2007

In this study, chemical dry characteristics of silicon nitride layers were investigated in the $F_2/N_2/Ar$ remote plasma. A toroidal-type remote plasma source was used for the generation of remote plasmas. The effects of additive $N_2$ gas on the etch rates of various silicon nitride layers deposited using different deposition techniques and precursors were investigated by varying the various process parameters, such as the $F_2$ flow rate, the addition $N_2$ flow rate and the substrate temperature. The etch rates of the various silicon nitride layers at the room temperature were initially increased and then decreased with the $N_2$ flow increased, which indicates an existence of the maximum etch rates. The etch rates of the silicon oxide layers were also significantly increased with the substrate temperature increased. In the present experiments the $F_2$ gas flow, addition $N_2$ flow rate and the substrate temperature were found to be the critical parameters in determining the etch rate of the silicon nitride layers

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• 센서학회지
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• 제8권5호
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• pp.414-420
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• 1999

희생층을 제거하는 기술은 표면 마이크로머시닝 공정의 핵심기술중 하나이다. 그러나 희생층을 제거하는데 널리 쓰이는 BHF 용액을 포함한 HF 수용액은 희생층 제거시 금속층으로 쓰이는 알루미늄도 같이 식각하는 것으로 알려져 있다. 기존의 문헌에서 $NH_4F$:HF:glycerine=4:1:2의 비를 갖는 혼합 용액이 알루미늄과 PSG 간의 식각 선택비가 최적조건으로 제시되었지만 이 희생층 식각액 또한 상당한 알루미능 식각률을 가지고 있다. 본 논문에서는 HF, $NH_4F$, glycerine의 농도를 광범위하게 변화시켜 희생층 제거에 필요한 최적 혼합비를 개발하였으며 그 결과 $NH_4F$:HF:glycerine=2:1:4의 혼합비에서 약 7,700정도의 PSG와 Al의 식각 선택비를 가져 기존의 최적 식각 선택비보다 차수가 약 6배정도 향상된 희생층 식각액을 얻을 수 있었다. 이 조건에서 PSG의 식각률은 희생층 제거시 충분히 빠른 값인 약 $2.1\;{\mu}m/min$을 나타내었다. 이러한 개발된 희생층 식각액은 표면 마이크로머시닝 공정에서 알루미늄 금속 공정의 추가를 용이하게 한다.

• 한국정보전자통신기술학회논문지
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• 제16권5호
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• pp.217-222
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• 2023

본 논문은 제조공정이 단순하고, 공정시간도 매우 짧아 제조원가를 절감할 수 있는 고분자 유기하드마스크를 합성하는데 목적을 두었다. 승화 정제 장치를 통한 잔류금속을 측정한 결과, 9-Naphthalen-1-ylcarbazole(9-NC)은 4th zone에서 101.75ppb, 2-Naphthol(2-NA)은 5th zone에서 306.98ppb, 9-Fluorenone(9-F)는 4th zone에서 5th zone 사이에서 129.05ppb로 측정되었다. 그리고 합성된 유기하드마스크를 필터 시스템을 거친 후 잔류금속을 측정한 결과 9 ~ 7ppb 측정되었다. 또 열분석 변화를 측정한 결과, 2.78%로 감소하였고 분자량은 942로 측정되었고 탄소 함량은 89.74%이고 수율은 72.4%로 나타났다. 에칭 속도는 평균 18.22Å/s로 측정되었고 코팅 두께 편차는 평균 1.19로 측정되었다. 유기하드마스크의 입자크기가 0.2㎛ 이하에서는 입자가 존재하지 않았다. 코팅 속도를 1,000, 1,500, 1,800rpm으로 변화를 주어 코팅 두께를 측정한 결과, 수축률은 17.9에서 20.8%까지 측정되었고 코팅 결과 SiON과 접착력이 우수하고 유기하드마스크가 균일하게 도포되었음을 알 수 있었다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 추계학술대회
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• pp.1196-1200
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• 2004

Micropump is very useful component in micro/nano fluidics and bioMEMS applications. In this study, a bubble-powered micropump was fabricated and tested. The micropump consists of two-parallel micro line heaters, a pair of nozzle-diffuser flow controller and a 1 mm in diameter, 400 ${\mu}m$ in depth pumping chamber. The two-parallel micro line heaters with 20 ${\mu}m-width$ and 200 ${\mu}m-length$ were fabricated to be embedded in the silicon dioxide layer of a wafer which serves as a base plate for the micropump. The pumping chamber, the pair of nozzle-diffuser unit and microchannels including the liquid inlet and outlet port were fabricated by etching through another silicon wafer. A glass wafer (thickness of $525{\pm}15$ ${\mu}m$) having two holes of inlet and outlet ports of liquid serve as upper plate of the pump. Finally the silicon wafer of the base plate, the silicon wafer of pumping chamber and the glass wafer were aligned and bonded (Si-Si bonding and anodic bonding). A sequential photograph of bubble nucleation, growth and collapse was visualized by CCD camera. Clearly liquid flow through the nozzle during the period of bubble growth and slight back flow of liquid at the end of collapsing period can be seen. The mass flow rate was found to be dependent on the duty ratio and the operation frequency. As duty ratio increases, flow rate decreases gradually when the duty ratio exceeds 60%. Also as the operation frequency increases, the flow rate of the micropump decreases slightly.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2011년도 제37회 추계학술대회논문집
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• pp.247-253
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• 2011

본 논문에서는 항공기 탑재용 환경조절장치에 사용하기 위한 미세유로형 증발열교환기의 성능 특성에 관한 연구결과를 제시하였다. 미세유로형 증발열교환기는 가능한한 적은 양의 냉매로 고온부의 열량을 흡수할 수 있도록 저온부 냉매의 증발잠열을 이용하고 단위 체적당 열전달 면적의 극대화를 위해 미세유로를 이용하는 개념이다. 설계된 공기 및 냉각수 유로를 에칭을 통해 가공하고, 이들을 적층하여 브레이징으로 접합한 후 입출구 포트를 용접함으로써 열교환기를 제작하였다. 제작된 열교환기는 기본 성능시험을 통해 요구조건대로 설계/제작되었음을 확인하였고, 다양한 운용조건에 대한 성능 맵 시험을 수행하여 입구 공기온도, 공기 유량 및 냉각수 유량 변화에 따른 열교환 성능특성을 정량적으로 파악하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric $YMnO_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of $YMnO_3$ thin film is $300{\AA}/min$ at $Ar/Cl_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, YFx compounds were found on the surface of $YMnO_3$ thin film which is etched in $Ar/Cl/CF_{4}$ plasma. The etch profile of $YMnO_3$ film is improved by addition of $CF_4$ gas into the $Ar/Cl_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1849-1851
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• 1999

The PDP(Plasma Display Panel) barrier rib was fabricated by focused $Ar^+$ laser ($\lambda$=514nm) and Nd:YAG($\lambda$=532, 266 nm) laser irradiation. The depth of the etched groove increases with increasing a laser fluence. and decreasing a scan speed. Using the second harmonic of the Nd:YAG laser, the threshold laser fluence was $6.5mJ/cm^2$ for the sample of PDP barrier rib dried at $120^{\circ}C$. The thickness of $150{\mu}m$ of the sample on the glass was etched without any damage on the glass substrate by fluence of $19.5J/cm^2$. The barrier rib sample on hot plate was etched by Nd:YAG laser(532 nm) as increasing a temperature of the sample. In this case, the etch rate was $95{\mu}m/s$, $190{\mu}m/s$ at room temperature, $175^{\circ}C$ respectively.