• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.150.1-150.1
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• 2014

Showerhead is used as a main part in the semiconductor equipment. The face plate flatness should remain constant and the cleaning performance must be gained to keep the uniformity level of etching or deposition in chemical vapor deposition process. High operating temperature or long period of thermal loading could lead the showerhead to be deformed thermally. In some case, the thermal deformation appears very sensitive to showerhead performance. This paper describes the methods for robust design using computational fluid dynamics. To reveal the influence of the post distribution on flow pattern in the showerhead cavity, numerical simulation was performed for several post distributions. The flow structure appears similar to an impinging flow near a centered baffle in showerhead cavity. We took the structure as an index to estimate diffusion path. A robust design to reduce the thermal deformation of showerhead can be achieved using post number increase without ill effect on flow. To prevent the showerhead deformation by heat loading, its face plate thickness was determined additionally using numerical simulation. The face plate has thousands of impinging holes. The design key is to keep pressure drop distribution on the showerhead face plate with the holes. This study reads the methodology to apply to a showerhead hole design. A Hagen-Poiseuille equation gives the pressure drop in a fluid flowing through such hole. The assumptions of the equation are the fluid is viscous-incompressible and the flow is laminar fully developed in a through hole. An equation can be expressed with radius R and length L related to the volume flow rate Q from the Hagen-Poiseuille equation, $Q={\pi}R4{\Delta}p/8{\mu}L$, where ${\mu}$ is the viscosity and ${\Delta}p$ is the pressure drop. In present case, each hole has steps at both the inlet and the outlet, and the fluid appears compressible. So we simplify the equation as $Q=C(R,L){\Delta}p$. A series of performance curves for a through hole with geometric parameters were obtained using two-dimensional numerical simulation. We obtained a relation between the hole diameter and hole length from the test cases to determine hole diameter at fixed hole length. A numerical simulation has been performed as a tool for enhancing showerhead robust design from flow structure. Geometric parameters for the design were post distribution and face plate thickness. The reinforced showerhead has been installed and its effective deposition profile is being shown in factory.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.324-325
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• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.319-322
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• 2003

To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

• Journal of Periodontal and Implant Science
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• 제32권3호
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• pp.523-537
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• 2002

The present study was performed to evaluate the effect of tetracycline - HCl on the change of implant surface microstructure according to application time. Implants with pure titanium machined surface, SLA surface and $TiO_2blasted$ surface were used. Implant surface was rubbed with 5Omg/ml tetracycline - HCl solution for ${\frac}{1}{2}$ min., 1 min., $1{\frac}{1}{2}$ min., 2 min., and 3min. respectively in the test group and with no conditioning in the control group. Then, the specimens were processed for scanning electron microscopic observation. The following results were obtained. 1. In the pure titanium machined surfaces, the control specimen showed a more or less rough machined surface composed of alternating positive and negative lines corresponding to grooves and ridges. After treatment, machining line was more pronounced for the control specimens. but in general, test specimens were similar to control. 2. In the SLA surfaces, the control specimen showed that the macro roughness was achieved by large-grit sandblasting. subsequently, the acid-etching process crated the micro roughness, which thus was superimposed on the macro roughness. 3. In the SLA surfaces, irrespective of the application time of 50mg/ml tetracycline-HCl solution, in general, test specimens were similar to control. 4. In the $TiO_2blasted$ surfaces the control specimen showed the rough surface with small pits. The irregularity of the $TiO_2blasted$ surfaces with 50mg/ml tetracycline-HCl solution was lessened and the flattened areas were wider relative to the application time of tetracycline - HCl solution. In conclusion, pure titanium machined surfaces and SLA surfaces weren't changed irrespective of the application time of tetracycline-HCl solution. And the $TiO_2blasted$ surfaces conditioned with tetracycline - HCl solution began to be changed from $1{\frac}{1}{2}$ min. This results are expected to be applied to the regenerative procedures for peri-implantitis treatment.

• 한국광학회지
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• 제3권4호
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• pp.258-265
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• 1992

저압화학기상증착법으로 Si 기판에 $P_{2}O_{5}-SiO_{2}$ 광도파박막계를 제작하였다. 제작된 박막의 광도파손실율은 1.65dB/cm이었으나 $1100^{\circ}C$에서 열처리한 뒤에는 0.1dB/cm 이하로 크게 감소하였다. 레이저 노광법과 활성이온식각법으로 광도파로를 제작하여 $1100^{\circ}C$에서 열처리하였다. 열처리 결과 도파로 코어의 모양은 사각형에서 반원형으로 바뀌었으며 0.6328$\mu$m에서 0.03dB/cm 그리고 1.53$\mu$m에서 0.04dB/cm의 낮은 도파손실율을 나타내었다. 도파로의 도파손실율이 감소하는 이유로는 고온 열처리과정에서 첫째 박막조직과 결합하여 광흡수를 일으키는 수소가 확산 방출되고 둘째 광산란을 일으키는 도파로의 거친 계면 및 박막조직이 재형성되며, 셋째 식각법으로 도파로를 만들때 생기는 도파로 코어의 거친 계면이 매끄럽게되어 도파광의 산란손실이 중어들기 때문으로 생각된다.

• 재활복지공학회논문지
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• 제11권2호
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• pp.133-141
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• 2017

하이브리드 음향센서 (hybrid acoustic sensor)는 음압 기반의 음향센서 (ECM)와 진동 기반의 가속도 센서(acceleration sensor)가 접목된 구조이다. 이는 음향센서의 저주파 대역 감도와 가속도 센서의 고주파 대역 감도를 결합하여 저주파에서 고주파 대역까지 광범위하게 음향을 포집할 수 있다. 본 논문에서는 하이브리드 음향센서에 사용되는 가속도 센서를 제안하였다. 가속도 센서는 음향신호에 의해 발생되는 고막의 진동을 포집한다. 제안된 가속도 센서의 사이즈는 고막의 해부학적 구조와 음향센서인 ECM의 규격을 고려하여 직경 3.2 mm로 결정하였다. 그리고 하이브리드 음향센서가 고감도 광대역 특성을 가지도록 하기 위해서는 가속도 센서의 공진 주파수는 3.5 kHz 부근에서 생성되는 것을 목표로 하였다. 가속도 센서를 구성하는 진동막은 수학적 모델과 유한요소 해석을 통하여 기하학적 구조를 도출하였다. 이를 바탕으로 화학적 식각공정을 이용하여 진동막을 제작하였다. 그리고 제작된 진동막의 주파수 특성을 확인하기 위하여 외력에 의한 진동 측정 실험을 수행하였고, 실험 결과 진동막의 기계적 공진은 3.4 kHz에서 발생되었다. 그러므로 제안한 가속도 센서는 하이브리드 음향센서에 유용하게 활용될 수 있을 것으로 판단된다.

• 마이크로전자및패키징학회지
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• 제12권2호
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• pp.111-119
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• 2005

직경 $75{\mu}m$ 높이 $90{\mu}m$및 $150{\mu}m$ 피치의 Cu via를 통한 삼차원 배선구조를 갖는 스택 시편을 deep RIE를 이용한 via hole 형성공정 , 펄스-역펄스 전기도금법에 의한 Cu via filling 공정, CMP를 이용한 Si thinning 공정, photholithography, 금속박막 스퍼터링, 전기도금법에 의한 Cu/Sn 범프 형성공정 및 플립칩 공정을 이용하여 제작하였다. Cu via를 갖는 daisy chain 시편에서 측정한 접속범프 개수에 따른 daisy chain의 저항 그래프의 기울기로부터 Cu/Sn 범프 접속저항과 Cu via 저항을 구하는 것이 가능하였다. $270^{\circ}C$에서 2분간 유지하여 플립칩 본딩시 $100{\times}100{\mu}m$크기의 Cu/Sn 범프 접속저항은 6.7 m$\Omega$이었으며, 직경 $75 {\mu}m$, 높이 $90{\mu}m$인 Cu via의 저항은 2.3m$\Omega$이었다.

• 전자공학회논문지SC
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• 제39권6호
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• pp.34-42
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• 2002

본 논문에서는 전압검출기에 사용되는 온도에 무관한 검출 전압원을 제안한다. 검출 전압원이 절대온도 영도(Zero degree)에서 실리콘 밴드갭 전압의 m배가 되도록 설계한다. 검출 전압원의 온도계수는 트랜지스터 이미터-베이스 사이의 서로 다른 면적을 가진 다이오드에 생성된 비선형 전압인 ${\Delta}V_{BE}$의 오목한 온도계수와 트랜지스터 순방향 전압인 $V_{BE}$의 볼록한 비선형 온도계수의 합으로 다이오드의 온도계수를 적절히 선택함으로서 거의 제로의 온도계수를 실현한다. 또한 검출 전압원의 값이 ${\Delta}V_{BE}$, $V_{BE}$ 멀티플라이어 회로 및 저항을 이용하여 변화될 수 있도록 설계하였다. 제안한 검출 전압원의 성능을 평가하기 위해, $6{\mu}m$ 바이폴러 기술로 조립된 1.9V용 IC를 제작하여 검출 전압원의 동작특성과 온도계수를 측정하였다. 또한 검출 전압원의 값이 공정에 의해 변화되는 요인을 줄이기 위해 트리밍 기술, 이온 임플란테이션과 이방성 에칭을 도입하였다. 제작된 IC에서 검출 전압원은 -30$^{\circ}C$~70$^{\circ}C$의 온도범위에서 29ppm/$^{\circ}C$의 안정된 온도계수를 얻을 수 있었다. 그리고 전압검출기의 소비전류는 1.9V 공급전압에서 $10{\mu}A$이다.

• Journal of Periodontal and Implant Science
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• 제35권4호
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• pp.921-937
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• 2005

Mechanical and chemical methods are the two ways to treat the implant surfaces. By using mechanical method, it is difficult to eliminate bacteria and by-products from the rough implant surface and it can also cause the structural change to the implant surface. Therefore, chemical method is widely used in order to preserve and detoxicate the implant surface more effectively. The purpose of this study is to evaluate the effect of tetracylcline- HCl on the change of implant surface microstructure according to application time. Implants with pure titanium machined surface, SLA surface and $TiO_2blasted$ surface were used in this study. Implant surface was rubbed with sponge soaked in 50mg/ml tetracycline - HCl solution for $\frac{1}{2}$ min., 1min., $1\frac{1}{2}$ min., 2 min., and $2\frac{1}{2}min.$ respectively in the test group and with no treatment in the control group. The sponge was soaked in every 30 seconds. Then, the specimens were processed for scanning electron microscopic observation. Based upon the analysis of photographs by three dentists who are not related with this study, the results were obtained as follows; 1. In the pure titanium machined surfaces, the control specimen showed a more or less rough machined surface composed of alternating positive and negative lines corresponding to grooves and ridges. After treatment, machining line was more pronounced for the control specimens. but in general, test specimens were similar to control. 2. In the SLA surfaces, the control specimen showed that the macro roughness was achieved by large-grit sandblasting. Subsequently, the acid-etching process created the micro roughness, which thus was superimposed on the macro roughness. Irrespective of the application time of 50mg/ml tetracycline - HCl solution, in general, test specimens were similar to control. 3. In the $TiO_2blasted$ surfaces, the control specimen showed the rough surface With small pits. The irregularity of the $TiO_2blasted$ surfaces with 50mg/ml tetracycline - HCl solution was lessened and the flattened areas got wider after 1 minute.