• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.32.2-32.2
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.1058-1062
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• 1997

Development of laser induced chemical etching technologt with KrF laser are carried out in this study for micromachining of silicon wafer. The paper is devoted to experimental identification of excimer laser induced mechanism of silicon under chlorine pressures(0.02~500torr). Experimental results on pulsed KrF excimer laser etching of silicon in chorine atmosphere are presented. Etching rate dependency on laser fluence and chlorine pressure are discussed on the basis of experimental analysis, it is concluded that accurate digital micro machining process of silicon wafer can achieved by KrF laser induced chemical etching technology.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.857-859
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• 2007

Durability of LCD glass, OA-10 and OA-21, to $SiCl_4$ and $SF_6$ gases was investigated. Reaction products are generated on the glass surface. The reaction products are reduced by changing the etching conditions. the durability of OA-10 and OA-21 to the dry etching gases is comparable.

• Restorative Dentistry and Endodontics
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• v.31 no.4
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• pp.263-268
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• 2006

Recently, self-etching adhesive system has been introduced to simplify the clinical bonding proce- dures. It is less acidic compared to the phosphoric acid, thus there is doubt whether this system has enough bond strength to enamel. The purpose of this study was to investigate the influence of additional etching on the adhesion of resin composite to enamel. Ninety extracted bovine permanent anterior teeth were used. The labial surfaces of the crown were ground with 600-grit abrasive paper under wet condition. The teeth were randomly divided into six groups of 15 teeth each. Clearfil SE $Bond^{\circledR},\;Adper^{TM}$ Prompt L-Pop and Tyrian $SPE^{TM}$ were used as self-etching primers. Each self-etching primers were applied in both enamel specimens with and without additional etching. For additional etching groups, enamel surface was pretreated with 32% phosphoric acid (UNI-ETCH, Bisco, Inc., Schaumburg, IL. USA). Hybrid resin composite Clearfil AP-X, (Kuraray Co., Ltd., Osaka, Japan) was packed into the mold and light-cured for 40 seconds. Twenty-four hours after storage, the specimens were tested in shear bond strength. The data for each group were subjected to independent t - test at p < 0.01 to make comparisons among the groups. In Clearfil SE $Bond^{\circledR}$, shear bond strength of additional etching group was higher than no additional etching group (p < 0.01). In $Adper^{TM}$ Prompt L-Pop and Tyrian SPE, there were no significant difference between additional etching and non-etching groups (p > 0.01). In conclusion, self-etching adhesive system with weak acid seems to have higher bond strength to enamel with additional etching, while self-etching adhesive system with strong acid seems not.

• Journal of the korean academy of Pediatric Dentistry
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• v.30 no.1
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• pp.143-152
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• 2003

The aims of the present study was to observe resin tag of the resin/enamel, dentin interface produced by self-etching adhesive systems and evaluate effect of additional acid etching on resin tag formation. Three self-etching primer(SE bond, AQ bond and L Pop) and an one bottle adhesive(Single bond) were used. Flat occlusal enamel and dentin disks were obtained from extracted human molars. A total of 20 surfaces were collected and divided into four groups of 5 samples. One-half of each specimen in each group was etched with 35% phosphoric acid prior to the application of each adhesive system, with the second half being kept unetched. Subsequently, resin composite was placed and polymerized. The samples were sliced and immersed into HCl and NaOCl solutions, followed by drying and sputter coating for examination with a SEM. The results were as follows; 1. Additional etching side of dentin displayed longer and thicker resin tag than unetched side in all self-etching adhesive groups. 2. In enamel, additional etching side displayed deeper and more distinct etching pattern than unetched side except L Pop. There is no difference between etched and unetched enamel in L Pop. The results obtained suggest the self-etching adhesive did not etch enamel and penetrate into dentinal tubule as deeply as did additional etching. Further research should include the evaluation of the relationship of boding strength, microleakage and resin tag morphology.

• Applied Chemistry for Engineering
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• v.24 no.1
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• pp.67-71
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• 2013

$FeCl_3$ has been used as an etchant for metal etching such as Fe, Cu, and Al. In the process of metal etching, $Fe^{3+}$ is reducted to $Fe^{2+}$ and the etching rate becomes slow and etching efficiency decreased. Waste $FeCl_3$ etchant needs to be regenerated because of its toxicity and treatment cost. In this work, HCl was initially mixed with the waste $FeCl_3$ and then, strong oxidants, such as $O_2$ and $H_2O_2$, were added into the mixed solution to regenerate the waste etchant. During successive etching and regeneration processes, oxygen-reduction potential (ORP) was continuously measured and the relationship between ORP and etching capability was investigated. Regenerated etchant using a two vol% HCl of the total etchant volume and a very small amount of $H_2O_2$ was very effective in recovering etching capability. During the etching-regeneration process, the same oxygen-reduction potential variation cannot be repeated every cycle since concentrations of $Fe^{2+}$ and $Fe^{3+}$ ions were continuously changed. It suggested that the control of etching-regeneration process based on the etching time becomes more efficient than that of the process based on oxygen reduction potential changes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.241-241
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• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

• Restorative Dentistry and Endodontics
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• v.32 no.4
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• pp.365-376
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• 2007

The purpose of this study was to evaluate the effect of different etching times on microtensile bond strength (${\mu}TBS$) to dentin both initial and after thermocycling with 3 different types of total-etching adhesives. Fifty four teeth were divided into 18 groups by etching times (5, 15, 25 sec), adhesives types (Scotchbond Multipurpose (SM), Single Bond (SB), One-Step (OS)) and number of thermocycling (0, 2,000 cycles). Flat dentin surfaces were prepared on mid-coronal dentin of extracted third molars. After exposed fresh dentin surfaces were polished with 600-grit SiC papers, each specimen was acid-etched with 35% phosphoric acid (5, 15, 25 sec) and bonded with 3 different types of total etching adhesives respectively. Then, hybrid composite Z-250 was built up. Half of them were not thermocycled (control group) and the ethers were subjected to 2,000 thermocycle (experimental group). They were sectioned occluso-gingivally into $1.0\;{\times}\;1.0\;mm^2$ composite-dentin beams and tested with universal testing machine at a crosshead speed of 1.0 mm/min. Within limited data of this study, the results were as follows 1. There was no statistically significant difference in ${\mu}TBS$ between the thermocycled and non-thermocycled groups, except for both SM and SB etched for 25 sec. 2. In thermocycled SM and SB groups, bond strength decreased by extended etching time. In total etching systems, adhesive durability for dentin could be affected by type of solvents in adhesive and etching time. Especially, extended etching time may cause deteriorate effects on bond strength when ethanol-based adhesive was used.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.449-455
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• 1997

The anisotropic etching behavior of single crystal silicon were studied in aqueous KOH solution. N-type (100) oriented single crystal silicon wafers were used for the study, and the $SiO_2$ layer, whose etching rate is known to be much slower than that of silicon in the KOH solution, was used as a mask for the silicon etching. The silicon etching rate and the etching properties are shown to be a function of etchant temperature uniformity, circulation speed, and circulation direction of the etchant as well as the etchant concentration and the temperature. The etching rate is increased as the temperature is increased from $10\mu \textrm{m}/hr$ to $250\mu \textrm{m}/hr$ in the range of $50^{\circ}C~105^{\circ}C$. Hillock density and height is observed to be correlated with the etchant concentration and the etch temperature. The variation of the hillock density was explained by the ratio between the etching rate of (100) orientation and that of (111) orientation.