• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1686-1690
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• 1989

Using the anisotropic etching characteristics of N2H4-H2O solutions, Si diaphragm was fabricated for the integrated sensors. The optimal composition and temperature of the etching solution in (100) Si etching process was established to be 50mol% N2H4 in H2O at 105\ulcorner\ulcorner for both higher etch rate (=2.6\ulcorner/min) and better surface quality of etched (100) planes. Based on the above optimal etching condition, the electrochemical etch-stop technique was employed to form n-type Si diaphragm having a thickness of 20\ulcorner and the thickness of diapragm could exactly be controlled to 20\ulcorner\ulcorner.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.109-112
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• 2002

The structural and optical features of Porous Silicon(PS) were investigated; the porous silicon was prepared by electrochemical etching of silicon wafers in HF solution. The morphologies and Photoluminescece(PL) features of the PS were investigated in terms of etching time, current density and aging conditions. The average pore diameter and pore depth were determined by current density and etching time, respectively. As-prepared PS exhibited the maximum PL peak at the wavelength of ∼ 450 nm. The degree of deviation from as-prepared PS during aging treatment seemed to depend on the microstructure as well as morphology of the PS. It is found that etching current density played an important role on the microstructural features of the PS.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1045-1048
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• 2003

In this paper, we studied plasma damage of MIS capacitor with $Al_2$O$_3$ dielectric film. Using capacitor pattern with the same area but different perimeters, we tried to separate etching damage mechanism and to optimize the dry etching process. After etching both metal and dielectric layer by the same condition, leakage current and C-V measurements were carried out for Pt/A1$_2$O$_3$/Si structures. The flatband voltage shift was appeared in the C-V plot, and it was caused by the variation of the fixed interface charge and the interface trapped charge. From I-V measurement, it was found the leakage current along the periphery could not be ignored. Finally, we established the process condition of RF power 300W, 100mTorr, Ar/Cl$_2$ gas 60sccm as an optimal etching condition.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.935-938
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• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.237-240
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• 2001

In this paper, we have presented processing technique about wet etching for silicon membrane construction formation. In order to make selective etching of backside silicon wafer, we used Si$_3$N$_4$ layer by PECVD(Plasma Enhanced Chemical Vapor Deposition). We have measured the surface thickness in backside silicon wafer after anisortropic wet etching with KOH:distilled water solutions. Through this experiment, we acquired the etching rate for 1.29${\mu}{\textrm}{m}$/min. The average rough of Si-membrane frontside and backside was 0.26${\mu}{\textrm}{m}$, 0.90${\mu}{\textrm}{m}$, respectively.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.5
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• pp.318-323
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• 2000

The planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD (chemical vapor deposition) was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate of diamond were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The threshold energy density from the experiment for etching of pure crystalline diamond was about $1.7J/cm^2$ and fairly matched the simulation value. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. When the angle of incidence was $80^{\circ}$ to the diamond surface normal, the peak-to-valley surface roughness was Significantly reduced from $20{\mu}m$ to $0.5{\mu}m$.

• Journal of Institute of Control, Robotics and Systems
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• v.4 no.4
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• pp.433-440
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• 1998

The purpose of this study is to provide an integrated process control system for plasma etching. The control system is designed to employ neural network for the modeling of plasma etching process and to utilize genetic algorithm to search for the appropriate selection of control input variables, and to provide a control chart to maintain the process output within a desired range in the real plasma etching process. The target equipment is the one operating in DRAM production lines. The result shows that the integrated system developed is practical value in the improved performance of plasma etching process.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.85-90
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• 1998

Reactive ion etching (RIE) of Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the could be used effectively to etch the Ta-Al alloy thin film. The etching rate of the thin film at a Ta content of 50 mol% was about 67$\AA$/min. No selectivity between the Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the etching rate of the SiO2 layer was 12 times faster than that of the Ta-Al alloy thin film. In addition, it was observed that photoresist of AZ5214 was more useful than Shiepley 1400-2 in RIE with the CF4 gas.

• Journal of the Korean institute of surface engineering
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• v.26 no.5
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• pp.271-279
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• 1993

Experiments on electorchemical etching of aluminum foils with high cubic textures were carried out in this study. Etching behaviours and pit shapes with respect to various conditions of eletrochemical etching were in-vestigated. When HCl and NaCl solutions were used as electrolytes, the highest capacitanes were observed in solutions of 1MHCl and 5M NaCl. It was foundd that capacitance was improved by addition of H2SO4 to HCl so-lution which is considered to be due to the suppression of oxide film formation on the aluminum surface. The homogeneous distribution of each pits obtained in the HCl solution, while the degree of weight loss was lowest in the Nacl solution. The best etching properties in 1M HCl solution were obtained at the etching condi-tions of 0.15 A/$\textrm{cm}^2$, 150sec and$ 90^{\circ}C$.

• Proceedings of the KACD Conference
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• 2003.11a
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• pp.618-618
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• 2003

The purpose of this study was to evaluate the etching effects and bond strength of total etching and self-etching adhesive system on unground enamel using scanning electron microscopy and microtensile bond strength test. The buccal coronal unground enamel from human extracted molars were prepared using low-speed deamond saw. Scotchbond Multi-Purpose(group CM), Clearfil SE Bond(group SE), or Adper Prompt L-pop(group LP) were applied to the prepared teeth, and resin compasite(Z-250) was built up incrementally. Resin tag formation were evaluated by scanning electron microscopy, after removal of enamel surface by acid dissolution and dehydration.(중략)