• The Journal of Advanced Prosthodontics
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• 제10권1호
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• pp.73-78
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• 2018

PURPOSE. The purpose of this study was to analyze the effects of two different implant surface treatments on initial bone connection by comparing the Removal Torque Values (RTQs) at 7 and 10 days after chemically modified, sandblasted, large-grit and acid-etched (modSLA), and Laser-etched (LE) Ti implant placements. MATERIALS AND METHODS. Twenty modSLA and 20 LE implants were installed on the left and right tibias of 20 adult rabbits. RTQs were measured after 7 and 10 days in 10 rabbits each. Scanning electron microscope (SEM) photographs of the two implants were observed by using Quanta FEG 650 from the FEI company (Hillsboro, OR, USA). Analyses of surface elements and components were conducted using energy dispersive spectroscopy (EDS, Horiba, Kyoto, Japan). RESULTS. The mean RTQs were $12.29{\pm}0.830$ and $12.19{\pm}0.713$ Ncm after 7 days (P=.928) and $16.47{\pm}1.324$ and $16.17{\pm}1.165$ Ncm after 10 days (P=.867) for LE and modSLA, respectively, indicating no significant inter-group differences. Pore sizes in the LE were $40{\mu}m$ and consisted of numerous small pores, whereas pore sizes in the modSLA were $5{\mu}m$. In the EDS analysis, Ti, O, and C were the only three elements found in the LE surfaces. Na, Ca, Cl, and K were also observed in modSLA, in addition to Ti, O, and C. CONCLUSION. The implants showed no significant difference in biomechanical bond strength to bone in early-stage osseointegration. LE implant can be considered an excellent surface treatment method in addition to the modSLA implant and can be applied to the early loading of the prosthesis clinically.

• 대한치과보철학회지
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• 제35권2호
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• pp.385-399
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• 1997

The purpose of this experiment was to determine the effects of etching with a Nd : YAG Laser on dentin, or porcelain surface on the bond strength with composite resin. The dentin specimens were devided into the following 4 groups. D1 : No treatment D2 : Etched with 10% phosphoric acid D3 : Laser etchded with 1W, 20PPs D4 : Laser etched with 2W, 20PPS The procelain specimens were devided into the following 4 groups. P1 : diamond roughened P2 : etched with HF acid P3 : Laser etched with 2W, 20PPS P4 : Laser etched with 3W, 20PPS All specimens were veneered with resin. One half of the specimens were stored in $37^{\circ}C$ water for one day and the other half were thermocycled 1000 times at temperature of $5^{\circ}C\;to\;55^{\circ}C$ at 20 seconds intervals. After that, the bonding strength of composite resin to the dentin and porcelain was measured. The surface treated state and fractured state were observed with SEM. The following results were obtained. 1. In the dentin specimens, the bond strength of group D2 was highter than that of groups D1 and D3 in the case of the specimens stored in $37^{\circ}C$ water for one day, there was a statistically significant difference between group D2 and D1, D3 (P<0.05). The bonding strength of the specimens that were thermocycled decreased in the following order : group D2,D4,D3 and then D1. 2. In the porcelain specimens, the bonding strength of groups P1,P2 were higher than that of group P3 in the case of the specimens stored in $37^{\circ}C$ water for one day (P<0.05). The bonding strength of the specimens of being thermocycled decreased in the following order : group P2,P1,P4 and then P3. 3. The groups of high bond strength had a rougher surface and a high level of microporosity with SEM findings.

• The Journal of Advanced Prosthodontics
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• 제8권3호
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• pp.235-240
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• 2016

PURPOSE. In this study, the aim of this study was to evaluate the effect of implant surface treatment on cell differentiation of osteoblast cells. For this purpose, three surfaces were compared: (1) a modified SLA (MSLA: sand-blasted with large grit, acid-etched, and immersed in 0.9% NaCl), (2) a laser treatment (LT: laser treatment) titanium surface and (3) a laser and acid-treated (LAT: laser treatment, acid-etched) titanium surface. MATERIALS AND METHODS. The MSLA surfaces were considered as the control group, and LT and LAT surfaces as test groups. Alkaline phosphatase expression (ALP) was used to quantify osteoblastic differentiation of MC3T3-E1 cell. Surface roughness was evaluated by a contact profilometer (URFPAK-SV; Mitutoyo, Kawasaki, Japan) and characterized by two parameters: mean roughness (Ra) and maximum peak-to-valley height (Rt). RESULTS. Scanning electron microscope revealed that MSLA (control group) surface was not as rough as LT, LAT surface (test groups). Alkaline phosphatase expression, the measure of osteoblastic differentiation, and total ALP expression by surface-adherent cells were found to be highest at 21 days for all three surfaces tested (P<.05). Furthermore, ALP expression levels of MSLA and LAT surfaces were significantly higher than expression levels of LT surface-adherent cells at 7, 14, and 21 days, respectively (P<.05). However, ALP expression levels between MSLA and LAT surface were equal at 7, 14, and 21 days (P>.05). CONCLUSION. This study suggested that MSLA and LAT surfaces exhibited more favorable environment for osteoblast differentiation when compared with LT surface, the results that are important for implant surface modification studies.

• 대한치과보철학회지
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• 제57권4호
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• pp.335-341
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• 2019

목적:불산과 염산/ 황산을 두 번 사용하는 임플란트 표면처리 방식은 선반가공한 표면에 비하여 강한 결합력을 보이지만 두 번 산처리하는 방식은 티타늄의 피로도를 야기시켜 미소균열을 야기시킬 수 있으므로, 염산으로 한번 산처리하는 방식이 비슷한 결합력을 가진다면 단순하고 효율적인 산처리 방식이 될 수 있다. 재료 및 방법: 9개의 지름 3.75, 길이 4 mm의 두 번 처리 방식의 임플란트와 같은 크기의 한 번 처리 방식의 임플란트를 토끼의 경골에 심어서, 10일 후에 회전제거력, 거칠기, 젖음각도를 측정하였다. 결과: 두 번 처리 방식과 한 번 처리 방식의 회전제거력은 차이가 없었고 (P = .995). 두 번 처리군의 거칠기는 $0.93{\mu}m$, 한 번 처리는 $0.84{\mu}m$이었다 (P = .170). 평균젖음각은 두 번 처리는 $99^{\circ}$, 한 번 처리는 $98^{\circ}$ 이었다 (P = .829). 각 변수 모두 두 그룹의 차이는 없었다. 결론:산으로 한번 처리하거나 두 번 처리 하거나 두 그룹의 회전제거력, 거칠기, 평균젖음각의 차이는 없었기 때문에 종래의 dual acid treatment보다 한번 처리하여도 유용한 것으로 보여진다.

• 한국전기전자재료학회논문지
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• 제24권1호
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• pp.64-69
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• 2011

Super-hydrophobic properties have been achieved on the rf-sputtered polytetrafluoroethylene(PTFE) films deposited on etched aluminum surfaces. The microstructural evolution created after etching has been investigated by FESEM. The water contact angle over $160^{\circ}$ can be achieved on the rf-sputtered ultra-tihn PTFE film less than 10 nm coated on aluminum surface etched with 7 wt.%, 12.5 wt.%, and 15 wt.% HCl concentration for 12 min. XPS analysis have revealed the presence of a large quantity of $-CF_3$ and $-CF_2$ groups in the rf-sputtered PTFE films that effectively can reduce the surface energy of etched aluminum. The presence of patterned morphology along with the low surface energy at the rf-sputtered PTFE coating makes the aluminum surface with high super-hydrophobic property.

• Transactions on Electrical and Electronic Materials
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• 제15권3호
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• pp.164-169
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• 2014

We investigated the etching characteristics of $HfAlO_3$ thin films in $O_2/Cl_2/Ar$ and $O_2/BCl_3/Ar$ gas, using a high-density plasma (HDP) system. The etch rates of the $HfAlO_3$ thin film obtained were 30.1 nm/min and 36 nm/min in the $O_2/Cl_2/Ar$ (3:4:16 sccm) and $O_2/BCl_3/Ar$ (3:4:16 sccm) gas mixtures, respectively. At the same time, the etch rate was measured as a function of the etching parameter, namely as the process pressure. The chemical states on the surface of the etched $HfAlO_3$ thin films were investigated by X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched $HfAlO_3$ thin films. These surface analyses confirm that the surface of the etched $HfAlO_3$ thin film is formed with nonvolatile by-product. Also, Cl-O can protect the sidewall due to additional $O_2$.

• Transactions on Electrical and Electronic Materials
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• 제13권6호
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• pp.287-291
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• 2012

We investigated the etching characteristics of TaN thin films in an $O_2/BCl_3/Cl_2/Ar$ gas using a high density plasma (HDP) system. A maximum etch rate of the TaN thin films and the selectivity of TaN to $SiO_2$ were obtained as 172.7 nm/min and 6.27 in the $O_2/BCl_3/Cl_2/Ar$ (3:2:18:10 sccm) gas mixture, respectively. At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. The chemical states on the surface of the etched TaN thin films were investigated using X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched TaN thin films. These surface analyses confirm that the surface of the etched TaN thin film is formed with the nonvolatile by-product.

• Journal of Electrical Engineering and information Science
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• 제2권5호
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• pp.108-113
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• 1997

In this paper, the optimum condition of (110) Si etching with the potassium hydroxide(KOH) etchant is presented. Although several researches on (110) Si anisotropic etching have been studied, there has been lack of effects of mask quality and etching conditions on the selectivity and the roughness o the etched surface. Three kinds of masks (film, emulsion and E-beam mask) were used in order to verify the effect of etching properties. Anisotropic bulk etching depends on the crystalline orientation and the concentration and temperature of the etchant. In order to investigate the effect of etching conditions on selectivity and the roughness of the etched surface, the concentration of the etchant was varied from 35 to 45 per cent in weight with increments by 5 per cent and the temperature was changed from 70 to 90$^{\circ}C$ with increments by 10$^{\circ}C$. The combination of the temperature of 70$^{\circ}C$ and the concentration of 40wt.% was found to be the optimum etching condition for high selectivity. Etched surfaces show minimum surfaces show minimum surface roughness at a temperature of 80$^{\circ}C$ and a concentation of 40wt.%. Comb structures with various comb widths were fabricated and the lengths of the combs wree measured with several etching time durations. A micro comb structure 525$\mu\textrm{m}$ high was fabricated for MEMS application.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.114-119
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• 2000

Etch characteristics of SF6/CI2 electron cyclotron resonance (ECR) plasmas have been investigated. Surface reaction of gas plasma with polysilicon was also analysed using X-ray photoelectron spectroscopy (XPS). At the same time, the relationship between surface reaction and the etched profile of polysilicon was examined using XPS. The etch rate of polysilicon and oxide increases with increasing flow rate of SF6 in the SF6/CI2 gas mixture, and tis selectivity also increase also increase. It was also found that as increasing flow rate of SF6 in the SF6/CI2 gas mixture, the atomic% of chlorine detected at surface region decrease, but F and S contents increase. At the same time, when the mixing ratio of SF6 gas increases, the anisotropy of etched polysilicon is sharply decreased in the 0%~10% range of the SF6 mixing ratio, but is rarely varied in the range over 10%, in spite of the large variations in flow rates. It can be explained that the bonding of S-Si due to SiSx(x$\leq$2) compound formed on the etched surface suppress the formation of Si-Cl and 'or Si-F bonding in the silicon etching.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.84-87
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• 2001

In this study, $CeO_2$ thin films were etched with a $CF_4/Ar$ gas combination in inductively coupled plasma (ICP), The maximum etch rate of $CeO_2$ thin films is $270{\AA}/min$under $CF_4/(CF_4+Ar)$ of 0.2, 600 W/-200 V, 15 mTorr, and $25^{\circ}C$. The selectivities of $CeO_2$ to PR and SBT are 0.21, 0.25. respectively. The surface reaction of the etched $CeO_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F, Compounds such as $Ce-F_x$ are remains on the surface of $CeO_2$ thin films. Those products can be removed by Ar ion bombardment effect, The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of $Ce-F_x$ thin films. The etch profile of over-etched $CeO_2$ films with the $0.5 {\mu}m$ line was approximately $65^{\circ}$.