• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.11
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• pp.3280-3286
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• 2009

In this paper, we designed and manufactured HD Switch Panel parts with micro-etched pattern. By using CAE analysis, we could predict weld-line positions and the amount of shrinkage during injection molding process. We measured the temperature distribution of the mold surface so that we could optimize the processing conditions such as mold temperature. In order to increase the transcription of micro-etched pattern, we applied the E-Mold technology and evaluated the effect of mold temperature on the surface quality. We concluded that the etched pattern was improved(more than 2.5$\to$1.5~1.7) through the measurement of surface gloss and the observation of both SEM and SPM images.

• Composites Research
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• v.34 no.6
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• pp.387-393
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• 2021

This paper investigated the electrical properties of multiwall carbon nanotube reinforced polydimethylsiloxane (CNT-PDMS) strain sensors with copper electrodes on the wet-etched surface. MWCNT-PDMS strain sensors were fabricated according to the wt% of MWCNT. Surfaces on the electrode area were wet-etched with various etching duration and silver epoxy adhesives were spread on the wet-etched surface. Finally, we attached the copper electrodes to the MWCNT-PMDS strain sensors. We checked the electric conductivities by the two-probe method and sensing characteristics under the cyclic loading. We observed the electric conductivity of MWCNT-PDMS strain sensors increased sharply and the scattering of the measured data decreased when the surface of the electrode area was wet-etched. Initial resistances of MWCNT-PDMS strain sensors were inversely proportion to wt% of MWCNT and the etching duration. However, the resistance changing rates under 30% strain increased as wt% of MWCNT and the etching duration increased. Decreasing rate of the electric resistance change after 100 repetitions was smaller when wt% of MWCNT was larger and the etching duration was short. This was due to the low initial resistance of the MWCNT-PMDS strain sensors by the wet-etching.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.551-556
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• 2001

In this work, the recovery of etching damage in the etched PZT thin film with $O_2$ annealing has been studied. The PZT thin films were etched as a function of Cl$_2$/Ar and additive CF$_4$ into Cl$_2$(80%) /Ar(20%). the etch rates of PZT thin films were 1600$\AA$/min at Cl$_2$(80%)/Ar(20%) and 1970 $\AA$/min at 30% additive Cf$_4$ into Cl$_2$(80%)/Ar(20%). In order to recover the characteristics of etched PZT thin films, the etched PZT thin films were annealed in $O_2$ atmosphere at various temperatures. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ annealing process. The improvement of ferroelectric behavior is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensities of Pb-O, Zr-O and Ti-O peak increase and the chemical residue peak is reduced by $O_2$ annealing. From the atomic force microscopy (AFM) images. it shows that the surface morphology of re-annealed PZT thin films after etching is improved.

• Korea-Australia Rheology Journal
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• v.19 no.3
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• pp.165-169
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• 2007

The light guide plate (LGP) of LCD-BLU (Liquid Crystal Display-Back Light Unit) is usually manufactured by forming numerous dots by etching process. However, the surface of those etched dots of LGP is very rough due to the characteristics of etching process, so that its light loss is relatively high due to the dispersion of light. Accordingly, there is a limit in raising the luminance of LCD-BLU. In order to overcome the limit of current etched-dot patterned LGP, micro-lens pattern was tested to investigate the possibility of replacing etched pattern in the present study. The micro-lens pattern fabricated by the modified LiGA with thermal reflow process was applied to the optical design of LGP. The attention was paid to the effects of different optical pattern type (i.e. etched dot, micro-lens). Finally, the micro-lens patterned LGP showed better optical qualities than the one made by the etched-dot patterned LGP in luminance.

• Journal of the Korean Society of Safety
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• v.16 no.2
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• pp.121-129
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• 2001

This paper demonstrates the development of optical temperature sensor based on the etched planar waveguide Bragg grating. Topics include design and fabrication of the etched planar waveguide Bragg grating, investigation of the grating reflection characteristics, and temperature measurement capabilities. The typical bandwidth and reflectivity of the surface etched grating has been ~0.2nm and ~7%, respectively, at a wavelength of ～1552nm. The temperature-induced wavelength change of the optical sensor is found to be slightly non-linear over ～20$0^{\circ}C$ temperature range. Theoretical models for the grating response of the sensor based on waveguide and plate deformation theories agree with experiments to within acceptable tolerance.

• Journal of the Korean institute of surface engineering
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• v.34 no.1
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• pp.10-16
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• 2001

Recently plasma etching research has been focused on the metal surfaces in the nuclear industry. In this study, surface etching reaction of metallic Co and Mo, principal contaminants in the spent nuclear components, in CF$_4$/O$_2$, gas plasma has been experimentally investigated to look into the applicability and the effectiveness of the technique for the surface decontamination. Experimental variables are $CF_4$/$O_2$ ratio and substrate temperature between 29$0^{\circ}C$ and 38$0^{\circ}C$. Experimental results Show that the optimum gas composition is 80%CF$_4$-20%$O_2$ and the metallic Co and Mo are etched out well enough in the temperatures range. Cobalt starts to be etched above $350^{\circ}C$ and the etching rate increases with increasing substrate temperature. Maximum rate achieved at 38$0^{\circ}C$ under 220 W r.f. plasma power is 0.06 $\mu\textrm{m}$/min. On the other hand, the metallic Mo is etched easily even at low temperature and the reaction rate drastically increases as the substrate temperature goes up. Highest rate obtained under the same conditions is $1.9\mu\textrm{m}$/min. OES (Optical Emission Spectroscopy) analysis reveals that the intensities of F atom and CO molecule reach maximum at the optimum gas composition, which demonstrates that the principal reaction mechanism is fluorination and/or carbonyl reaction. It is confirmed, therefore, that dry processing technique using reactive plasma is quite feasible and applicable for the decontamination of surface-contaminated parts or equipments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1078-1084
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• 2006

Impurity contamination induced by $CF_4\;and\;HBr/Cl_2/O_2$ plasma etching on Si surface was examined by using surface spectroscopes. XPS(x-ray photoelectron spectroscopy) surface analysis showed that F of 0.4 at % exists in the surface layer in the form of Si-F bonding but Br and Cl are below the detection limit $(0.1{\sim}1.0%)$ of the spectroscope. Static-SIMS(secondary ion mass spectrometry) surface analysis showed that the etched Si surface was contaminated with etching gas elements such as H, F, Cl and Br, and they existed to the depth of about $20{\sim}40nm$. The etched Si surface was treated with three different methods that were HF dip, thermal oxidation followed by HF dip and oxygen-plasma oxidation followed by HF dip. They showed an effect in reducing the impurity contamination and the oxygen-plasma oxidation followed by HF dipping method appears to be a little bit more effective.

• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.328-332
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• 2012

Etch rates of Si and high purity SiC have been compared for various fluorocarbon plasmas. The relative plasma resistance of SiC, which is defined as the etch rate ratio of Si to SiC, varied between 1.4 and 4.1, showing generally higher plasma resistance of SiC. High resolution X-ray photoelectron analysis revealed that etched SiC has a surface carbon content higher than that of etched Si, resulting in a thicker fluorocarbon polymer layer on the SiC surface. The plasma resistance of SiC was correlated with this thick fluorocarbon polymer layer, which reduced the reaction probability of fluorine-containing species in the plasma with silicon from the SiC substrate. The remnant carbon after the removal of Si as volatile etch products augments the surface carbon, and seems to be the origin of the higher plasma resistance of SiC.

• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.309-315
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• 2004

In the pressure sensor, about below 20 kPa, the center boss diaphragm structure is generally used, but it is hard to obtain the high sensitivity because the center boss structure is limited at the thickness and size of diaphragm with chip size. Therefore, this paper suggests that the Center boss structure has surface etched diaphragm using a stress concentration to improve the sensitivity. We carried out the simulation and fabrication applied new diaphragm design. In the result, the sensitivity is improved to 60% without the change of non-linearity (0.14%FS). So, the Center boss of surface etched diaphragm can be applied for the high sensitivity in the low-pressure sensor.

• Transactions of Materials Processing
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• v.13 no.3
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• pp.268-272
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• 2004

Transparent materials such as fused silica are widely utilized in optical and optoelectronics field because of its outstanding properties, such as transparency in a wide wavelength range, strong damage resistance for laser irradiation, and high thermal and chemical stability. In this study, we made a few micro patterns on the surface of fused silica plate using laser induced wet etching. KrF excimer laser was used as a light source. There were no burrs and micro cracks on the etched surface of fused silica and the flatness of the etched surface was fairly good. We investigated the influence of etchant upon the etch rate and quality in laser induced wet etching. Pyrene-acetone solution and toluene were used as etchant. In the side of etch rate, toluene solution was better than pyrene-acetone solution. But we made in wider range of energy density using pyrene-acetone solution. But pyrene-acetone solution gave us wider window of energy density for successful micro patterning.