• Clean Technology
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• v.2 no.1
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• pp.47-52
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• 1996

The solvent extraction method was applied on a spent solution containing copper, which was produced in a printed circuit board process, to recover copper and to reuse the etching solution. Lix 64 N ($\alpha$-Hydroxyoxime + $\beta$-Hydroxybenzophenone Oxime) was used as a solvent. The acidic spent copper solution was mixed with and alkaline copper solution to pH=2. The solvent including 30 volume% of Lix 64 N extracted 17.1gr/l of copper from the mixed spent copper solution. In the continuous bench scale experiment, 4 stages for extraction, 2 stages for stripping and 4 stages for washing were used. Recovered copper was recycled as copper sulfate and the raffinate was reused as copper etchant. The percentage of copper recovery and the purity of copper sulfate were higher than 99.9%, respectively.

• Solar Energy
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• v.19 no.3
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• pp.125-131
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• 1999

This paper deals with a novel structure of poly-Si solar cell. A grain boundary(GB) of poly-Si acts as potential barrier and recombination center for photo-generated carriers. To reduce unwanted side effects at the GB of poly-Si, we employed physical GB removal of poly-Si using chemical solutions. Various chemical etchants such as Sirtl, Yang, Secco, and Schimmel were investigated for the preferential GB etching. Etch depth about 10 ${\mu}m$ was achieved by a Schimmel etchant. After a chemical etching of poly-Si, we used $POCl_3$ for emitter junction formation. This paper used an easy method of top electrode formation using a RF sputter grown ITO film. ITO films with thickness of 300 nm showed resistivity of $1.26{\times}10^{-4}{\Omega}-cm$ and overall transmittance above 80%. Using a preferential GB etching and ITO top electrode, we developed a new fabrication procedure of poly-Si solar cells. Employing optimized process conditions, we were able to achieve conversion efficiency as high as 16.6% at an input power of 20 $mW/cm^2$. This paper investigates the effects of process parameters: etching conditions, ITO deposition factors, and emitter doping densities in a poly-Si cell fabrication procedure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.796-803
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• 1998

Intrinsic and proximity gettering are popular processes to get higher cumulative production yield and usually adopt multi-step annealing and high energy ion implantation, respectively. In order to test the combined processed of these, high energy \ulcornerAs\ulcorner ion implantation and 2-step annealing process were adopted. After the ion implantation followed by 2-step annealing, the wafers were cleaved and etched with Wright etchant. The morphology of cross section on samples was inspected by FESEM. The concentration profile of As was measured by SRP. The location and type of secondary defects inspected by HRTEM were dependent on the 1st annealing temperatures. That is, a line of dislocation located at $1.5mutextrm{m}$ apart from the surface at $600^{\circ}C$ lst annealing was changed to some dislocation lines or loops nearby the surface at 100$0^{\circ}C$. The density of dislocation line was reduced but the size of the defects was enlarged as the temperature increased.

• Journal of the Semiconductor & Display Technology
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• v.10 no.1
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• pp.91-94
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• 2011

This paper presents light transmission efficiency by optical adhesive thickness between MLA and aperture layer and by aperture hole size. The gap between MLA and Aperture layer is adjusted by the shim. The more optical adhesive thickness increases, the better light transmission efficiency increases up to a point. After that, the light transmission efficiency decreases because stray lights cannot transmit through the aperture layer owing to cut-off by aperture layer. And as a result of light transmission efficiency with changing aperture hole size, the light transmission efficiency is proportional to area of aperture hole. The more specified process is made, the better data and sample will be got.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.309-317
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• 2000

Langasite is a promising new piezoelectric material for SAW filter application. Little was known until recently about the methods needed to mechanically polish and chemically polish/etch this material. In this experiment, polishing, slurry chemistry and chemical wet etching for langasite is described. Conventional quartz and LN ($LiNbO_3$) polishing methods did not produce satisfactory polished surfaces, and polishing with a colloidal silica slurries has shown to be most effective. The optimum condition was investigated by changing the slurry chemistry. As the planarization effect is very important in SAW filter applications, the examination of the effective particle number effect and the particle size effect was carried out. Z-cut langasite surface which had been polished with the colloidal silica slurries was etched in a variety of etchants. Conventional quartz etchants destroyed the polished surface. Other etchants formed a thin film on the surfaces. In this experiment, the reaction between langasite and a few etching solution was analysed. And an appropriate selective etchant solution for analyzing the defects was synthesized.

• Bulletin of the Korean Chemical Society
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• v.24 no.11
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• pp.1613-1617
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• 2003

In the phosphoric acid based etchant, the dissolution rates of Mo films were measured by microgravimetry and the corrosion potentials of Mo and Al were estimated by Tafel plot method with various concentrations of nitric acid. Dissolution rate of Mo increased with the nitric acid concentration and reached a limiting value at high concentration of nitric acid in ambient condition. Corrosion potentials of Mo and Al shifted to positive direction and the difference between potentials of both metals was about 1,100 mV and 1,200 mV with 1% and above 4% of $HNO_3$, respectively. For a Mo/Al bilayers, the dissolution rate inversion is the main reason for good taper angle in shower etching process. Taper angles are observed by scanning electron microscope (SEM) after wet etching process for Mo/Al layered films with different concentrations of $HNO_3$. In the etch side profile, it was found that Al corroded faster than Mo below 4% of $HNO_3$ in dip etching process, however, Mo corroded faster above 4%. Trend for variation of taper angle of etched side of Mo/Al layered film can be explained by considering the effect corrosion rates of both metals with various concentrations of $HNO_3$.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.17-21
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• 2016

EUV (Extreme Ultraviolet) pellicle which protects a mask from contamination became a critical issue for the application of EUV lithography to high-volume manufacturing. However, researches of EUV pellicle are still delayed due to no typical manufacturing methods for large-scale EUV pellicle. In this study, EUV pellicle membrane manufacturing method using not only KOH (potassium hydroxide) wet etching process but also a water bath was suggested for uniform etchant temperature distribution. KOH wet etching rates according to KOH solution concentration and solution temperature were confirmed and proper etch condition was selected. After KOH wet etching condition was set, $5cm{\times}5cm$ SiNx (silicon nitride) pellicle membrane with 80% EUV transmittance was successfully manufactured. Transmittance results showed the feasibility of wet etching method with water bath as a large-scale EUV pellicle manufacturing method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.365-370
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• 1998

We studied a electrical properties in GaAs/AlGaAs/InGaAs pseudomorphic high electron mobility transistors(PHEMT s) recessed by electron cyclotron resonance(ECR) plasma and wet etching. Using the $NH_4OH$ solution, a nonvolatile AlF$_3$layer formed on AlGaAs surface after selective gate recess is effectively eliminated. Also, we controlled threshold voltage($V_th$) using $H_3PO_4$ etchant. We have fabricated a device with 540 mS/mm maximum transconductance and -0.2 V threshold voltage by using $NH_4OH$ and $H_3PO_4$dip after ECR gate recessing. In a 2-finger GaAs PHEMT with a gate length of 0.2$\mu m$ and width of 100 $\mu m$, a current gain of 15 dB at 10 GHz and a maximum cutoff frequency of 58.9 GHz have been obtained from the measurement of current gain as a function of frequency at 12mA $I_{dss}$ and 2 V souce-drain voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.687-692
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• 2011

Hafnium oxide ($HfO_2$) was very advantageous for substitute material of gate on existing transistor. $HfO_2$ has been widely studied due to high contact with polysilicon and thermal stability and also, it is easily etched by using HF solution. In this study, $HfO_2$ and thermal oxide films were etched by wet etch method using chemical etchant. Etch rate of $HfO_2$ and thermal oxide was linearly increased with increasing concentration of HF and temperature but etch rate of $HfO_2$ was higher than thermal oxide due to $H^+$, $F^-$, and $HF_2^-$ ions at below 0.5% concentration of HF. And also, etch selectivity was improved by adding Hydrazine as additive.

• Resources Recycling
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• v.14 no.5 s.67
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• pp.40-44
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• 2005

The purified phosphoric acid was recovered from crude phosphoric acid with high contents of aluminium and molybdenum ions to reuse the acid as an etchant. In this work, solvent extraction was applied to recover the phosphoric acid from crude phosphoric acid. Phosphate was used as an extractant. Further cleaning and removing processes on the recovered phosphoric acid were conducted to eliminate the metallic ion impurities in the acid. The process parameters were successfully optimized, so that the finally purified acid contained less than 1 ppm of aluminium and molybdenum ion.