• Analytical Science and Technology
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• v.13 no.6
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• pp.775-780
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• 2000

The electrical conductivity of glass melter at high temperature has been measured. The conductivity is an important physical property for the research and the manufacturing process of glass. Because high temperature is an inconvenient situation to measure the conductivity of glass melter, we have made a platinum crucible and electrode and have measured the conductivity at high temperature. KCl solution, of which concentration is adjusted to the conductivity of glass melter, is used to get parameters of the conductivity cell. A measuring circuit is composed with an AC 1 kHz sine wave generator and an operational amplifier. The cell constants are determined from the measured voltages and the equivalent conductances of KCl solution. Various cells are tested to find a suitable shape for high temperature experiment. The results are compared by cell size, electrode depth, and cell configuration. The conductivity of the borosilicate melter is $0.053{\Omega}^{-1}cm^{-1}$ at $1,450^{\circ}C$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.2
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• pp.169-179
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• 1999

In this paper, a GaAs MESFET single-ended resistive mixer with high linearity and isolation is designed. The bias voltage of this mixer is applied only gate of GaAs MESFET to use the channel resistance. The LO is applied the gate and the RF is applied the drain through 7-pole hairpin bandpass filter to obtain the proper isolation thru LO-RF. The IF is extracted from the source with short circuit and lowpass filter. Using extracted equivalent circuits for LO and RF, conversion loss is calculated and compared with result of harmonic balance analysis. Measured conversion loss of this S-band down converter mixer is 8.2~10.5dB by considering the measured 3.0~3.4dB RF 7-pole hairpin bandpass filter loss and IP3in is 26.5dBm at Vg=-0.85~-1.0V in distortion performance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.12
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• pp.1269-1275
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• 2003

In this paper, nonradiative dielectric(NRD) rotman lens with a gap-coupled unidirectional dielectric radiator(UDR) has been designed. Gap-coupled UDR is structurally suitable for NRD rotman lens. We have optimized NRD rotman lens for minimizing side-lobe, and calculated design parameters of UDR such as length of resonator and distance of gap using an equivalent circuit model of an evanescent NRD guide. Experimental prototype of UDR is fabricated and measured at the center frequency of 38 GHz. The simulated S-parameter and far-field radiation beam pattern of UDR show good agreements with measured data. Finally, total beam pattern of NRD rotman lens of multi-beam feed has been obtained using a measured pattern of UDR and array factor of NRD rotman lens. The obtained beam pattern shows remarkably suppressed side-lobe.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.5
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• pp.452-461
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• 1997

In this paper, we present a computer-aided design(CAD) technique for minimizing the phase shift in microstrip PIN diode attenuators due to the junction capacitance in the equivalent circuit model of PIN diode. Microstrip PIN diode attenuators use the characteristics which the reactance of microstrip line changes from inductive to capacitive as the frequency sweeps across the band. Microstrip PIN diode attenuator designed utilizes the quarter-wavelength transmission line terminating with the half-moon radial stub, which is designed for negligible phase shifting effect over the intersted bandwidth. The attenuator has similar phase shift at 0 dB and 10 dB of attenuation within average $1.27^{\circ}$ between 1.2GHz and 1.9GHz. The input and output return losses between 1.4 GHz and 1.9 GHz are less than 10 dB over the attenuation range of 0 dB and 10 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.6
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• pp.876-885
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• 2000

A new and simple method is presented for determining the parasitic resistances of MESFET and HEMT from the measured S-parameters under normal active bias without depending on additional DC measurements or iteration or optimization process. The presented method is based on the fact that the difference between source resistance(Rs) and drain resistance(Rd) can be obtained from the measured Z-parameters under zero bias condition. It is possible to define the new internal device including intrinsic device and 3 parasitic resistances by elimination the parasitic inductances and capacitances from the measured S-parameters. Three parasitic resistances are calculated easily from the fact that the real parts of Yint,11 and Yint,12 of intrinsic Y-parameters are zero theoretically and the relations between S-,Z-, Y-matrices. The calculated parasitic resistances using the presented method and successively calculated equivalent circuit parameters give modeled S-parameters which are in good agreement with the measured S-parameters up to 400Hz.

• Journal of the Korean Society for Railway
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• v.15 no.2
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• pp.135-140
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• 2012

Interior Permanent Magnet Synchronous motors (IPMSM) with concentrated winding are superior to distributed winding in the power density point of view. But it causes huge amount of eddy current losses on the permanent magnet. This paper presents the optimal permanent magnet V-shape on the rotor of an interior permanent magnet synchronous motor to reduce the core losses and improve the performance. Each eddy current loss on permanent magnet has been investigated in detail by using FEM (Finite Element Method) instead of equivalent magnetic circuit network method in order to consider saturation and non-linear magnetic property. Simulation-based design of experiment is also applied to avoid large number of analyses according to each design parameter and consider expected interactions among parameters. Consequently, the optimal design to reduce the core loss on the permanent magnet while maintaining or improving motor performance is proposed by an optimization algorithm using regression equation derived and lastly, it is verified by FEM.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.37 no.4
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• pp.52-58
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• 2000

In this paper, the novel dielectric resonator bandpass filter for Korea personal communication service channel combiner is proposed. The equivalent circuit of the channel bandpass filter is derived using the lumped elements. Proposed channel bandpass filter provides compact size, low insertion loss, two attenuation poles in the stop band, and excellent temperature characteristics. Two channel filters are combined with proposed dielectric resonator filter configuration to implement the 2-channel combiner. Experimental results show the validity of the proposed dielectric resonator channel bandpass filter.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.10
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• pp.11-16
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• 2000

The SPICE model of the spiral inductor on silicon substrate which can be easily used for the RF IC design has been developed. In this proposed model the equivalent circuit element of the spiral inductor are defined by the layout and process parameters using the user-defined function and subcircuit of the SPICE. The total inductance is calculated using the subcircuit Li for the arbitrary turn i and the subcircuit Mij for two arbitrary turns. The model was verified by comparing the simulated data with the measured s-parameters, total inductance, and quality factor of the spiral inductor fabricated by the CMOS 0.8${\mu}m$ process. The proposed SPICE model of the spiral inductor is scalable and includes the effects of the silicon substrate.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.5
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• pp.567-577
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• 1998

When continuous and discontinuous microstrip is analyzed with FDTD(Finite Difference Time Domain) method, we used Berenger's 3D-PML as absorbing boundary condition, and IST(Inner Source Technique) was used for source excitation instead of front excitation that is existing method. In the case using IST, we have observed that analyzed characteristic is not affected by the reduced computational domain of the side and top face in which evanescent field and radiation field is exist. Also, if we control the position of the inner source, we could effectively reject the influence of the reflective wave by mean of imperfective boundary condition. In this paper, by using IST, we have calculated dispersive characteristic and characteristic impedance of the microstrip. And we have calculated magnitude and phase of the scattering coefficient, and obtained equivalent circuit of the open microstrip end.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.12
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• pp.1064-1071
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• 2015

In this paper, the electrical characteristics of interdigital capacitor with single-layer and multi-layer graphene were compared and analyzed in the microwave region. In equivalent circuit, a capacitor coupled with graphene showed the clear difference in electrical components such as resistance, inductance, and capacitance. In particular, for the capacitor with single-layer graphene, additional inductance and resistance occurred and the electrode resistance was also increased. Meanwhile, the self-resonance frequency of capacitor was shifted toward lower frequency region and its transmitted characteristic was considerably improved at frequency ranging from 0.4 to 4 GHz. The electrical characteristics of the capacitor with multi-layer graphene were somewhat different than the bare capacitor. In conclusion, we could confirm that single-layer graphene greatly influenced the electrical characteristics and performances of interdigital capacitor compared to multi-layer graphene.