• Composites Research
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• v.34 no.1
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• pp.47-50
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• 2021

In this paper, the Curing process for Epoxy Molding Compound (EMC) Package was developed by comparing the performance of the EMC/Cu Bi-layer package manufactured by the conventional Hot Press process system and Carbon Nanotubes (CNT) Heater process system of the surface heating system. The viscosity of EMC was measured by using a rheometer for the curing cycle of the CNT Heater. In the EMC/Cu Bi-layer Package manufactured through the two process methods by mentioned above, the voids inside the EMC was analyzed using an optical microscope. In addition, the interfacial void and warpage of the EMC/Cu Bi-layer Package were analyzed through C-Scanning Acoustic Microscope and 3D-Digital Image Correlation. According to these experimental results, it was confirmed that there was neither void in the EMC interior nor difference in the warpage at room temperature, the zero-warpage temperature and the change in warpage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.9
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• pp.535-540
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• 2017

The changes in the electrical characteristics of CMOS ICs due to coupling with a narrow-band electromagnetic wave were analyzed in this study. A magnetron (3 kW, 2.45 GHz) was used as the narrow-band electromagnetic source. The DUT was a CMOS logic IC and the gate output was in the ON state. The malfunction of the ICs was confirmed by monitoring the variation of the gate output voltage. It was observed that malfunction (self-reset) and destruction of the ICs occurred as the electric field increased. To confirm the variation of electrical characteristics of the ICs due to the narrow-band electromagnetic wave, the pin-to-pin resistances (Vcc-GND, Vcc-Input1, Input1-GND) and input capacitance of the ICs were measured. The pin-to-pin resistances and input capacitance of the ICs before exposure to the narrow-band electromagnetic waves were $8.57M{\Omega}$ (Vcc-GND), $14.14M{\Omega}$ (Vcc-Input1), $18.24M{\Omega}$ (Input1-GND), and 5 pF (input capacitance). The ICs exposed to narrow-band electromagnetic waves showed mostly similar values, but some error values were observed, such as $2.5{\Omega}$, $50M{\Omega}$, or 71 pF. This is attributed to the breakdown of the pn junction when latch-up in CMOS occurred. In order to confirm surface damage of the ICs, the epoxy molding compound was removed and then studied with an optical microscope. In general, there was severe deterioration in the PCB trace. It is considered that the current density of the trace increased due to the electromagnetic wave, resulting in the deterioration of the trace. The results of this study can be applied as basic data for the analysis of the effect of narrow-band high-power electromagnetic waves on ICs.

• Analytical Science and Technology
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• v.18 no.1
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• pp.5-12
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• 2005

It has been established that soft error of high precision electronic circuits can be induced by alpha particles emitted from the naturally occurring radioactive impurities such as U, and Th. As the electronic circuits have recently become lower dimension and higher density, these alpha-particle emitting radioactive impurities have to be strictly controlled. The aim of this study is to develop of NAA (Neutron Activation Analysis) and gamma-spectrometry to improve the analytical sensitivity and precision of U and Th. A new NAA method has been established using the HTS (Hydrulic transfer system) irradiation facility which has been used to produce radioisotopes for industries and medicines instead of the PTS (pneumatic transfer system) irradiation facility which has been used in general NAA. When the ultratrace impurities have to be analyzed by NAA, background gamma-ray spectra induced from $^{222}Rn$ and its progenies in air is serious problem. This unstable background has been eliminated or stabilized by the use of a nitrogen purging system. Ultra trace amounts of U (0.1 ng/g) and Th (0.01 ng/g) in high purity silica used for EMC could be analyzed by the use of HTS-NAA and low background gamma-spectrometry.