• 제목/요약/키워드: energy resolution

검색결과 1,091건 처리시간 0.032초

Sputtering of Solid Surfaces at Ion Bombardment

  • Kang, Hee-Jae
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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    • pp.20-20
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    • 1998
  • I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

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트렌치 표면에서의 RIE 식각 손상 회복 (RIE induced damage recovery on trench surface)

  • 이주욱;김상기;배윤규;구진근
    • 한국진공학회지
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    • 제13권3호
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    • pp.120-126
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    • 2004
  • 트렌치 소자 제조시 게이트 산화막 성장과 내압 강하의 원인이 되는 식각손상 회복과 코너 영역의 구조를 개선하기 위해 수소 분위기 열처리를 하였다. 열처리시 수소 원자에 의한 환원 반응을 이용하여 표면 에너지가 높은 코너 영역에서는 원자들의 이동에 의한 결정면 재배열, 산화막 측벽에서의 실리콘 원자 적층, 표면 거칠기의 개선 효과 등을 전자현미경 관찰을 통해 확인하였다. 실리콘 원자의 이동을 방해하는 식각 후 잔류 산화막을 수소 가스의 환원성 분위기에서 열처리함으로써 표면 에너지를 낮추는 방향으로 원자의 이동이 일어나 concave 영역, 즉 트렌치 bottom corner에서는 (111), (311) 결정면 재분포 현상이 일어남을 확인할 수 있었다. 또한 convex comer에서의 원자 이동으로 인해 corner 영역에서는 (1111) 면의 step 들이 존재하게 되고 원자 이동에 의해 산화막 측벽에 이르러 이동된 원자의 적층이 일어나며, 이는 열처리시 표면 손상 회복이 원자이동에 의함을 나타낸다. 이러한 적층은 표면 상태가 깨끗할수록 정합성을 띄어 기판과 일치하는 에피 특성을 나타내고 열처리 온도가 높을수록 표면 세정 효과가 커져 식각손상 회복효과가 커지며, 이를 이용하여 이후의 산화막 성장시 균일한 두께를 코너영역에서 얻을 수 있었다

Low-temperture Synthesis of CdTe/Te Core-shell Hetero-nanostructures by Vapor-solid Process

  • 송관우;김태훈;배지환;이재욱;박민호;양철웅
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.580-580
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    • 2012
  • Heterostructures has unique and important properties, which may be helpful for finding many potential applications in the field of electronic, thermoelectric, and optoelectronic devices. We synthesized CdTe/Te core-shell heterostructures by vapor-solid process at low temperatures using a quartz tube furnace. Two step vapor-solid processes were employed. First, various tellurium structures such as nanowires, nanorods, nanoneedles, microtubes and microrods were synthesized under various deposition conditions. These tellurium nanostructures were then used as substrates in the second step to synthesize the CdTe/Te core-shell heterostructures. Using this method, various sizes, shapes and types of CdTe/Te core-shell structures were fabricated under a range of conditions. These structures were analysed by scanning electron microscopy, high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. The vapor phase process at low temperatures appears to be an efficient method for producing a variety of Cd/Te hetero-nanostructures. In addition, the hetero-nanostructures can be tailored to the needs of specific applications by deliberately controlling the synthetic parameters.

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Reset-first Resistance Switching Mechanism of HfO2 Films Based on Redox Reaction with Oxygen Drift-Diffusion

  • Kim, Jong-Gi;Lee, Sung-Hoon;Lee, Kyu-Min;Na, Hee-Do;Kim, Young-Jae;Ko, Dae-Hong;Sohn, Hyun-Chul
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.286-287
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    • 2012
  • Reset-first resistive switching mechanism based on reduction reaction in HfO2-x with oxygen drift-diffusion was studied. we first report that the indirect evidence of local filamentary conductive path formation in bulk HfO2 film with local TiOx region at Ti top electrode formed during forming process and presence of anion-migration at interface between electrode and HfO2 during resistive switching through high resolution transmission electron microscopy (HRTEM), electron disperse x-ray (EDX), and electron energy loss spectroscopy (EELS) mapping. Based on forming process mechanism, we expected that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing process. First-reset resistive switching in above $350^{\circ}C$ annealed Ti/HfO2 film was exhibited and the redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was observed with high angle annular dark field (HAADF) - scanning transmission electron microscopy (STEM), EDX and x-ray photoelectron spectroscopy. Therefore, we demonstrated that the migration of oxygen ions at interface region under external electrical bias contributed to bipolar resistive switching behavior.

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2009년 봄철 황사 단일 입자의 광물학 몇 혼합상태 (Single-Particle Mineralogy and Mixing State of Asian Dust, Spring, 2009)

  • 정기영;최호정;권석기
    • 한국광물학회지
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    • 제24권3호
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    • pp.225-234
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    • 2011
  • 2009년 3월 17일 채집된 황사 총시료(TSP)의 개별 입자에 대하여, 고분해 주사전자현미경 및 에너지분산 X선 분광분석을 이용한 광물학적 특성 및 혼합상태 분석을 실시하였다. 황사 입자들 중, 석영, 사장석, K-장석, 각섬석, 흑운모, 백운모, 녹니석, 방해석 등은 비교적 조립질 입자로 산출되며, 이들 입자는 앓은 극미립 일라이트질 점토광물 층으로 피복되어 있다. 극미립 점토광물 입자들은 또한 개별 점토 덩어리를 형성한다. 조립질 방해석 외에 나노섬유 방해석들이 개별적으로 또는 집합체로 큰 입자를 피복하거나 점토광물과 함께 덩어리를 형성한다. 입자의 주 광물에 따라 광물학적 분류를 실시하고 빈도를 구하였다. 이번 TSP의 단일입자 광물학적 특성 및 혼합상태는 기존의 $PM_{10}$ 분석 결과와 거의 차이가 없었다.

Protein Expression Analysis of Halobacillus dabanensis $D-8^T$ Subjected to Salt Shock

  • Feng De Qin;Zhang Bo;Lu Wei Dong;Yang Su Sheng
    • Journal of Microbiology
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    • 제44권4호
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    • pp.369-374
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    • 2006
  • To investigate the mechanism of salt tolerance of gram-positive moderately halophilic bacteria, two-dimensional gel electrophoresis (2-D PAGE) was employed to achieve high resolution maps of proteins of Halobacillus dabanensis $D-8^T$. Approximately 700 spots of proteins were identified from these 2-D PAGE maps. The majority of these proteins had molecular weights between 17.5 and 66 kDa, and most of them were distributed between the isoelectric points (pI) 4.0 and 5.9. Some protein spots were distributed in the more acidic region of the 2-D gel (pI <4.0). This pattern indicated that a number of proteins in the strain $D-8^T$ are acidic. To understand the adaptation mechanisms of moderately halophilic bacteria in response to sudden environmental changes, differential protein profiles of this strain were investigated by 2-D PAGE and $Imagemaster^{TM}$ 2D Platinum software after the cells were subjected to salt shock of 1 to 25% salinity for 5 and 50 min. Analysis showed 59 proteins with an altered level of expression as the result of the exposure to salt shock. Eighteen proteins had increased expression, S proteins were induced, and the expression of 33 proteins was down-regulated. Eight of the up-regulated proteins were identified using MALDI-TOF/MS and MASCOT, and were similar to proteins involved in signal transduction, proteins participating in energy metabolism pathways and proteins involved in stress.

가스크로마토그래피에 依한 微量元素分析 (A New Gas-Chromatograghic Method of Organic Elemental Analysis)

  • 김유선;손연수;최규원
    • 대한화학회지
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    • 제8권4호
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    • pp.188-191
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    • 1964
  • 微量元素分析用 燃燒爐 內에서 內部酸化劑(酸化銀과 二酸化 망간의 混合物)와 함께 有機試料를 헤륨 氣流下에서 燃燒시키고 發生한 물은 칼슘카바이드管에 通하여 아세틸렌으로 變換시킨다. 二酸化炭素와 아세틸렌을 molecular sieve 5A 管에 室溫에서 吸着시킨 후 $340^{\circ}C$까지 溫度${\cdot}$프로그탬法으로 脫着시켜 실리카켈管을 通하여 分別流出시키고 熱傳導式 檢知器로 $CO_2$$C_2H_2$를 定量하는 方法을 發展시켰다. 벤조酸을 標準物質로 하여 作成한 檢量線을 使用하여 各種 有機試料中의 炭素 및 水素含量을 分析한 結果 平均誤差가 炭素의 경우 ${\pm}0.5%$, 水素인 경우${\pm}0.33%$ 이었다.

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Stretch가 없는 수직 시간차 보정 (Stretch-free Normal Moveout Correction)

  • 편석준
    • 지구물리와물리탐사
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    • 제20권4호
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    • pp.232-240
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    • 2017
  • NMO보정은 탄성파 반사법 자료처리의 핵심적인 과정이고, AVO분석을 위해 가장 중요한 자료처리 단계이다. 그러나 NMO보정이 갖고 있는 근본적인 문제인 stretch 현상은 겹쌓기 단면의 품질을 저해하고 AVO분석의 신뢰성을 떨어뜨린다. 이 문제점을 해결하기 위해서 일반적으로 뮤팅을 수행하지만 stretch가 없는 NMO보정 기술을 적용한다면 먼거리 벌림 자료의 활용도가 높아진다. 이 논문에서는 먼저 NMO보정의 개념과 방법, 그리고 stretch 현상의 원인 및 특성에 대해 설명한다. Stretch 현상에 대한 직관적인 이해를 위해 단순화된 모형반응에 대한 NMO보정을 보여주고, 정량적인 이해를 위해 NMO보정에 대한 이론 식을 설명한다. Stretch를 제거하는 뮤팅에 대해 설명함으로써 기존 방법의 한계점과 새로운 해결책에 대한 필요성에 대해 논한다. Stretch가 없는 NMO보정 기법은 여러 가지 종류가 있는데 여기서는 역산 이론에 의해 이를 구현하는 방법을 사용하였다. 마지막으로 역산 기법을 통해 구현한 stretch가 없는 NMO보정을 합성자료와 현장자료에 적용하여 실제 성능을 확인해 보았다.

Bubbly, Slug, and Annular Two-Phase Flow in Tight-Lattice Subchannels

  • Prasser, Horst-Michael;Bolesch, Christian;Cramer, Kerstin;Ito, Daisuke;Papadopoulos, Petros;Saxena, Abhishek;Zboray, Robert
    • Nuclear Engineering and Technology
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    • 제48권4호
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    • pp.847-858
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    • 2016
  • An overview is given on the work of the Laboratory of Nuclear Energy Systems at ETH, Zurich (ETHZ) and of the Laboratory of Thermal Hydraulics at Paul Scherrer Institute (PSI), Switzerland on tight-lattice bundles. Two-phase flow in subchannels of a tight triangular lattice was studied experimentally and by computational fluid dynamics simulations. Two adiabatic facilities were used: (1) a vertical channel modeling a pair of neighboring sub-channels; and (2) an arrangement of four subchannels with one subchannel in the center. The first geometry was equipped with two electrical film sensors placed on opposing rod surfaces forming the subchannel gap. They recorded 2D liquid film thickness distributions on a domain of $16{\times}64$ measuring points each, with a time resolution of 10 kHz. In the bubbly and slug flow regime, information on the bubble size, shape, and velocity and the residual liquid film thickness underneath the bubbles were obtained. The second channel was investigated using cold neutron tomography, which allowed the measurement of average liquid film profiles showing the effect of spacer grids with vanes. The results were reproduced by large eddy simulation + volume of fluid. In the outlook, a novel nonadiabatic subchannel experiment is introduced that can be driven to steady-state dryout. A refrigerant is heated by a heavy water circuit, which allows the application of cold neutron tomography.

Investigation of the Scanning Tunneling Microscopy Image, the Stacking Pattern and the Bias-voltage Dependent Structural Instability of 2,2'-Bipyridine Molecules Adsorbed on Au(111) in Terms of Electronic Structure Calculations

  • Suh, Young-Sun;Park, Sung-Soo;Kang, Jin-Hee;Hwang, Yong-Gyoo;Jung, D.;Kim, Dong-Hee;Lee, Kee-Hag;Whangbo, M.-H.
    • Bulletin of the Korean Chemical Society
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    • 제29권2호
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    • pp.438-444
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    • 2008
  • A self-assembled monolayer of 2,2'-bipyridine (22BPY) molecules on Au(111) underwent a structural phase transition when the polarity of a bias voltage was switched in scanning tunneling microscopy (STM) experiments. The nature of two bright spots representing each 22BPY molecule on Au(111) in the high-resolution STM images was identified by calculating the partial density plots for a monolayer of 22BPY molecules adsorbed on Au(111) using tight-binding electronic structure calculations. The stacking pattern of the chains of 22BPY molecules on Au(111) was explained by examining the intermolecular interactions between the 22BPY molecules based on first principles electronic structure calculations for a 22BPY dimer, (22BPY)2. The structural instability of the 22BPY molecule arrangement caused by a change in the bias voltage switch was investigated by estimating the adsorbate-surface interaction energy using a point-charge approximation for Au(111).