• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.128.1-128.1
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• 2016

Nitrided-metal gates on the high-${\kappa}$ dielectric material are widely studied because of their use for sub-20nm semiconductor devices and the academic interest for the evanescent states at the Si/insulator interface. Issues in these systems with the Si substrate are the electron mobility degradation and the reliability problems caused from N defects that permeates between the Si and the $SiO_2$ buffer layer interface from the nitrided-gate during the gate deposition process. Previous studies proposed the N defect structures with the gap states at the Si band gap region. However, recent experimental data shows the possibility of the most stable structure without any N defect state between the bulk Si valence band maximum (VBM) and conduction band minimum (CBM). In this talk, we present a new type of the N defect structure and the electronic structure of the proposed structure by using the first-principles calculation. We find that the pair structure of N atoms at the $Si/SiO_2$ interface has the lowest energy among the structures considered. In the electronic structure, the N pair changes the eigenvalue of the silicon-induced gap state (SIGS) that is spatially localized at the interface and energetically located just above the bulk VBM. With increase of the number of N defects, the SIGS gradually disappears in the bulk Si gap region, as a result, the system gap is increased by the N defect. We find that the SIGS shift with the N defect mainly originates from the change of the kinetic energy part of the eigenstate by the reduction of the SIGS modulation for the incorporated N defect.

• KIEAE Journal
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• 제15권3호
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• pp.37-42
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• 2015

Purpose: Apartment is a typical residential type in Korea. In the past, apartment types were very monotonous. But today, the types of complex are changed because personal needs have been diversified and personalized. In order to meet those needs, construction companies are constructing various types of apartments. The more apartment types are diverse, the more the energy problems are taken place. So, the purpose of this study is to solve the problem of energy gap in the same complex through improving the thermal transmittance of wall. Method: Heating energy consumption of Building Energy Efficiency Rating System and heating energy usage of apartment show a similar trend on the graph. In order to identify the best position of heating energy consumption difference reduction, we change the building's U-value of front, back, side walls. Result: In the A complex, maximum and minimum heating energy consumption building's shapes are flat. the best efficiency is side U-value change and the worst is front change. In the E complex, maximum heating energy consumption building's shape is tower and minimum building shape is flat. Consequently, the front and back wall performance change was little effect to reduce energy gap, while the change of side wall's U-value show the great reduction between building's energy consumptions.

• 대한전기학회논문지:전력기술부문A
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• 제49권7호
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• pp.359-364
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• 2000

This paper is introducing a newly developed spark-gap switch with dual trigger system, into which the current from the voltage source is injected along with the test sequence during the synthetic testing of high voltage circuit-breaker. The currently-used spark gap switch is narrow in operating range due to the use of the method of triggering energy being injected by single way. As a result, the frequent happening of misoperation has greatly reduced the test quality and test efficiency and has required the cost of maintenance excessively. In this study, accordingly, in order to basically remove these problems, another triggering system is installed to the opposite direction on the existing triggering system; attaching the same time and the same rising time of pulse wave as on the existing system, so that at a comparatively trigger gap distance from the main electrode(the gap can be operated at 60% of self-break voltage, while at 80% in the current system), the main electrode has been enabled to be closed by the development of spark gap switch with dual trigger system.

• Bulletin of the Korean Chemical Society
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• 제35권9호
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• pp.2738-2742
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• 2014

Geometry relaxation effects on the formation of benzene excimer were investigated by means of ab initio calculation at SOS-CIS($D_0$)/aug-cc-pVDZ level. In the case of T-shaped dimer configuration, intermolecular interactions in the excited states are found to be nearly the same as those in the ground state and structural deformations are limited within a single molecule; the geometry relaxation effects are then negligible and singlet-triplet energy gap remains constant. As for face-to-face eclipsed dimer, on the other hand, both molecules undergo structural change. As a result, intermolecular interactions in the excited states are significantly different than those in the ground state. Although the intermolecular distances obtained from potential energy curve calculation with frozen molecular structures are in qualitative agreement, the excited-state binding energies are notably overestimated with respect to those at optimized structures. In particular, the effects are calculated to be larger in $T_1$ state and hence singlet-triplet energy gap, which reduces markedly in this configuration, is underestimated without relaxation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.305.2-305.2
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• 2016

Tin monosulfide (SnS) is one promising candidate absorber material which replace the current technology based on cadmium telluride (CdTe) and copper indium gallium sulfide selenide (CIGS) for its suitable optical band gap, high absorption coefficient, earth-abundant, non-toxic and cost-effective. During past years work, thin film solar cells based on SnS films had been improved to 4.36% certified efficiency. In this study, Tin monosul fide was obtained by atomic layer deposition (ALD) using the reaction of Tetrakis (dimethylamino) tin (TDMASn, [(CH3)2N]4Sn) and hydrogen sulfide (H2S) at low temperatures (100 to 200 oC). The direct optical band gap and strong optical absorption of SnS films were observed throughout the Ultraviolet visible spectroscopy (UV VIS), and the properties of SnS films were analyzed by sanning Electron Microscope (SEM) and X-Ray Diffraction (XRD).

• 대한전기학회논문지
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• 제41권9호
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• pp.1085-1094
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• 1992

A variable-spacing cesium thermionic energy conversion test station is designed and fabricated for the study of power generation. The diode is in the form of a guard-ringed plane-parallel geometry in which a polycrystalline rhenium emitter of 2 cmS02T area faces a radiation-cooled polycrystalline rhenium collector of 1.9 cmS02T area. The emission of plasma from heated refractory electrode metal is the driving reaction in the direct conversion of heat to electricity by thermionic energy conversion. The plasma is produced from electrons and positive ions formed simultaneously by thermionic emission and surface ionization of cesium atoms incident on the hot emitter from the cesium vapor in the diode. And high plasma density causes plasma multiplication within the gap due to volume ionization that results in high power output. The variation of the saturation current of a Knudsen converter is investigated at an emitter-collector gap of 0.1 mm and an emitter temperatures. A maximum power output of 13.47 watta/cmS02T is observed at a collector temperature of 963 K and a cesium reservoir temperature of 603 K.

• 한국진공학회지
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• 제3권2호
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• pp.227-233
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• 1994

CuAlGeSe4 및 CuAlGeSe4 ; Co2+ 결정을 고순도의 성분원소로부터 합성하고 서냉법으로 결정을 성장시켰다. 이들결정은 chalcopyrite 결정구조를 갖고 있으며 직접전이형 energy gap 구조를 갖고 286K에서 energy gap은 CuAlGeSe4 결정의 경우는 2.394eV이며 CuAlGeSe4 ; Co2+ 결정의 경우는 2.302 eV로 주어졌다. CuAlGeSe4 : Co2+ 결정에서 cobalt에 의한 불순물 광흡수 peak들은 12243, 7002, 3890 cm-1에서 나타났으며 이 peak들은 CuAlGeSe4 : Co2+ 결정의 Td symmetry site에 위치한 Co2+ ion의 energy 준위사이의 전자전이에 의한 optical absorption임을 규명했다.

• 대한전자공학회논문지
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• 제26권11호
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• pp.1814-1818
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• 1989

The crystals of ZnGa2S4 and ZnGa2S4:Co(2mole%) were synthesized from high-purity (99.999%) elements of Zinc, Gallium, and sulfur. The crystal structure of these crystals belong to a tetragonal system with layer type and the lattice constants are a =5.35\ulcorner c=10.43\ulcornerfor ZnGa2S4: Co(2 mole%) crystal at 298\ulcorner. The optical absorption spectra of these compounds were obtained through reflectance measurements using a 60 mm diameter intergrating sphere. The optical energy gaps are 3.18eV for ZnGa2S4 and 2.60eVfor ZnGa2S4:L Co(2mole%)at 298\ulcorner, respectively.

• 한국세라믹학회지
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• 제33권12호
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• pp.1353-1364
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• 1996

Recently semiconductor doped glasses have attracted attention as nonlinear optical materials because of their large third order nonlinear optical properties. The transparent and homogeneous CdS-doped SiO2 glass thin films were obtained by the dip=coating process of the sol-gel method. Thin films were consisted of glasses containing CdS microcrystallites which were formed by dissolved Cd2+ and S2- ions in a SiO2 matrix solutions. A subsequent thermal treatment of this samples led the formation of colloidal agglomerates and finally of microcrystallites. The size of CdS microcrystallites was about 4 to 15 nm after thermal treatments at various heating conditions. From the optical absorption spectra of the CdS-doped SiO2 glass films it was found that the absorption edge was blue-shifted compared with that of the bulk CdS crystal(~2, 4 eV) and that the amount of energy shift was inversely proportional to the crystal size. And the band gap energy increased with the decrease in crystallite size indicating that the quantum size effects occured.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.188-194
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• 1998

The GaSe:$Er^{3+}$(5mol%) single crystals grown by the Bridgman technique displayed a direct energy gap at 1.79 eV and an indirect energy gap of 1.62 eV at 300 ${\circ}^$K. Also an optical absorption peak by impurity was found at 6505 $cm^{-1}$. The peak identified the origin of the electronic transitions to be between the energy levels of $Er^{3+}$ ions.