• Earthquakes and Structures
• /
• v.24 no.4
• /
• pp.247-258
• /
• 2023

Multiple pounding tuned rolling mass damper (MPTRMD) distributed in the cavity of voided slabs is proposed to passively control multi-story frame structures, which disperses the mass of the oscillator to multiple dampers so that the control device can be miniaturized without affecting the vibration control performance. The mechanism and the differential motion equations of the MPTRMD-controlled multi-degree-of-freedom system are derived based on the Lagrange principle. Afterward, this advanced RMD is applied to a simplified 20-floor steel frame to evaluate the seismic control performance in the numerical analysis. A four-storey frame structure equipped with MPTRMD is then taken for a shaking table test to verify its effectiveness of control performance. The pounding mechanism has been detailed studied numerically and experimentally as well. The numerical and experimental results show that the proposed damper is practically promising not only for its prominent control performance but also for its lightweight and space-saving. Additionally, the pounding mechanism influenced by the variable impact parameters exhibits a balance between the two effects of motional limitations and energy dissipation.

• Structural Engineering and Mechanics
• /
• v.81 no.2
• /
• pp.147-161
• /
• 2022

The Brace-Type Shear Fuse (BSF) device is a newly proposed steel damper with excellent cumulative ductility and stable energy dissipation. In consideration of the current situation where there are not many alternatives for transversal seismic devices used in long-span three-tower self-anchored bridges (TSSBs), this paper implements improved BSFs into the world's longest TSSB, named Jinan Fenghuang Yellow River Bridge. The new details of the BSF are developed for the TSSB, and the force-displacement hysteretic curves of the BSFs are obtained using finite element (FE) simulations. A three-dimensional refined finite element model for the research TSSB was established in SAP2000, and the effects of BSFs on dynamic characteristics and seismic response of the TSSB under different site conditions were investigated by the numerical simulation method. The results show that remarkable controlling effects of BSFs on seismic response of TSSBs under different site conditions were obtained. Compared with the case without BSFs, the TSSB installed with BSFs has mitigation ratios of the tower top displacement, lateral girder displacement, tower bending moment and tower shear force exceeding 95%, 78%, 330% and 346%, respectively. Meanwhile, BSFs have a sufficient restoring force mechanism with a minor post-earthquake residual displacement. The proposed BSFs exhibit good application prospects in long-span TSSBs.

• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.44 no.4
• /
• pp.373-379
• /
• 2016

The thermal control device for the periodic working component combined solid-liquid phase change material (PCM) with heat pipes is designed and numerically studied. Due to high latent heat and retaining constant temperature during melting process the component peak temperature, not withstanding small radiator size, is reduced. The warm-up heater power consumption to keep the minimum allowed temperature is also cut down since the accumulated thermal energy is released through the solidification. The thermal buffer mass (TBM) made of Al can give the similar effect but the mass and power consumption of warm-up heater should increase compared to PCM. The amount of PCM can be optimized depending on the component heat dissipation and on/off duty time.

• The Journal of the Convergence on Culture Technology
• /
• v.6 no.2
• /
• pp.521-527
• /
• 2020

Quantum-dot cellular automata (QCA) is a technology that attracts attention as a next-generation digital circuit design technology, and several digital circuits have been proposed in the QCA environment. Content-addressable memory (CAM) is a storage device that conducts a search based on information stored therein and provides fast speed in a special process such as network switching. Existing CAM cell circuits proposed in the QCA environment have a disadvantage in that a required area and energy dissipation are large. The CAM cell is composed of a memory unit that stores information and a match unit that determines whether or not the search is successful, and this study proposes an improved QCA CAM cell by designing the memory unit in a multi-layer structure. The proposed circuit uses simulation to verify the operation and compares and analyzes with the existing circuit.

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.4
• /
• pp.1-13
• /
• 2014

The paper gives an overview of the concepts, basic requirements, and trends regarding packaging technologies of power modules in hybrid (HEV) and electric vehicles (EV). Power electronics is gaining more and more importance in the automotive sector due to the slow but steady progress of introducing partially or even fully electric powered vehicles. The demands for power electronic devices and systems are manifold, and concerns besides aspects such as energy efficiency, cooling and costs especially robustness and lifetime issues. Higher operation temperatures and the current density increase of new IGBT (Insulated Gate Bipolar Transistor) generations make it more and more complicated to meet the quality requirements for power electronic modules. Especially the increasing heat dissipation inside the silicon (Si) leads to maximum operation temperatures of nearly $200^{\circ}C$. As a result new packaging technologies are needed to face the demands of power modules in the future. Wide-band gap (WBG) semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) have the potential to considerably enhance the energy efficiency and to reduce the weight of power electronic systems in EVs due to their improved electrical and thermal properties in comparison to Si based solutions. In this paper, we will introduce various package materials, advanced packaging technologies, heat dissipation and thermal management of advanced power modules with extended reliability for EV applications. In addition, SiC and GaN based WBG power modules will be introduced.

• Journal of the Microelectronics and Packaging Society
• /
• v.23 no.4
• /
• pp.87-92
• /
• 2016

The importance of heat dissipation for the electric device modules along the thickness direction is increasing. Two types of two-layered materials, metal-metal bonding and dielectric-metal bonding, have been fabricated by roll bonding process and a thermal diffusivity of the specimens was measured along the thickness direction. The thermal diffusivity of specimens with metal-metal bonding measured by light flash analysis (LFA) showed a same value independent on the direction of heat flow. However, the thermal diffusivity of specimens with dielectric-metal bonding showed a big difference of 17.5% when the direction of heat flow changed oppositely in the LFA process. The measured thermal diffusivity of specimens when the heat flows from metal to dielectric direction showed smaller value of 17.5% compared to the value when the heat flow from dielectric to metal direction. The difference in thermal diffusivity of specimens with dielectric-metal bonding dependence on direction of heat flow is due to the electron-phonon resistance that occurred transfer process of electron energy to phonon energy near the interface.

• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.2
• /
• pp.41-48
• /
• 2018

The quantitative interfacial adhesion energy measurement method of copper redistribution layer and WPR dielectric interface were investigated using $90^{\circ}$ peel test, 4-point bending test, double cantilever beam (DCB) measurement for FOWLP Applications. Measured interfacial adhesion energy values of all three methods were higher than $5J/m^2$, which is considered as a minimum criterion for reliable Cu/low-k integration with CMP processes without delamination. Measured energy values increase with increasing phase angle, that is, in order of DCB, 4-point bending test, and $90^{\circ}$ peel test due to increasing roughness-related shielding and plastic energy dissipation effects, which match well interfacial fracture mechanics theory. Considering adhesion specimen preparation process, phase angle, measurement accuracy and bonding energy levels, both DCB and 4-point bending test methods are recommended for quantitative adhesion energy measurement of RDL interface depending on the real application situations.

• Computational Structural Engineering
• /
• v.6 no.1
• /
• pp.127-135
• /
• 1993

This paper summarizes a study on the application of viscoelastic dampers as an energy dissipation device in the frame structure. It can be concluded that, even at high temperatures, the viscoelastically damped structure can achieve a significant reduction of structural response as compared to the case with no dampers added. Empirical formulae for estimating the dynamic properties of the viscoelastic damper are established based on the regression analysis using data obtained from component tests of the damper. The structural damping with added dampers can be satisfactorily estimated by the modal strain energy method and the derived empirical formulae. Numerical simulations using conventional modal analysis methods are also carried out to predict the dynamic response of viscoelastically damped structures under seismic excitations. Comparison between numerical simulations and test results shows very good agreement. Based on the above studies, a design procedure for viscoelastically damped structures is present . This design procedure fits naturally into the conventional structural design flow-chart by including damping ratio an additional design parameter.

• Journal of the Korea institute for structural maintenance and inspection
• /
• v.26 no.4
• /
• pp.1-10
• /
• 2022

In this study, to evaluate the possibility of using a steel spring as a displacement-dependent damping device, tensile loading and cyclic loading tests were performed. The main experimental variables were the type of steel (SAE9254 and SS275), the spring constant (700 N/mm, 1,000 N/mm, and 1,400 N/mm), and the presence or absence of heat treatment for SAE9254. As a result of the tensile test, the ratios of the measured spring constant to the design spring constant of the steel springs made with SAE9254 ranged from 1.08 to 1.13, while the ratios of the design spring constant and the measured spring constant of the steel springs made with SS275 ranged from 0.86 to 0.97. After yielding, the slope values of the load-displacement curve of the SAE9254 with/without heat treatment were about 240~251 N/mm and 92 N/mm, respectively, but the slope values of the load-displacement response of SS275 were almost zero. According to the uniaxial cyclic loading test results, all specimens were satisfied with three conditions for a displacement-dependent damping device in KDS 41 17 00 (2019): the maximum force and minimum force at zero displacement, the maximum force and minimum force at the maximum displacement, and the energy dissipation capacity. In addition, the equivalent damping ratios of steel springs made with SAE9254(non-heat treatment) and SS275 were approximately 2.8 times and 1.9 times greater, respectively, than that of steel springs made with SAE9254.

• Korean Journal of Materials Research
• /
• v.5 no.1
• /
• pp.96-103
• /
• 1995

This art~cle reports on the formation of T - Gate with O.1$\mu$m foot and 0.4$\mu$m head width at PMMA/P( MMA/MAA) resist structure using a 30KV electron beam lithography system. From the result of Monte Carlo simulation on PMMA/P( MMA/MAA)/GaAs, we obtain the dissipation energy ratio of forwardscattered electron and backscattered electron within 0.1$\mu$m scattering radius is 19.5 : 1 0.1$\mu$m T - gate has been formed with 30KV gaussian electron beam at a 440$\mu C/\textrm{cm}^2$ dosage. The gamma value of PMMA and P(MMA/MAA) at MIBK : IPA=l : 1 developer was 2.3. The overlay accuracy(3$\sigma$) from mix-andmatch of optical stepper and Ekeam lithography system for fabricating HEMT device is accomplished below 0.1$\mu$m.