Degradation Characteristics by Hot Carrier Injection of nchannel MOSFET with Gate- $n^{-}$ S/D Overlapped Structure
(게이트와 $n^{-}$ 소스/드레인 중첩구조를 갖는 n 채널 MOSFET의 핫캐리어 주입에의한 소화특성)
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- Journal of the Korean Institute of Telematics and Electronics A
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- v.30A no.2
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- pp.36-45
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- 1993