• Korean Journal of Materials Research
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• v.15 no.3
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• pp.195-201
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• 2005

The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.770-775
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• 2002

We present the band lineups of G $e_{1-}$x S $n_{x}$ G $e_{1-}$y S $n_{y(001)}$ heterostructures for the new devices. The energy gap of the bulk G $e_{1-}$x S $n_{x}$ alloy is calculated by taking into account the Vegard's law. The change of the energy gap due to the strain is understood in terms of the deformation Potential theory The valence band offset is obtained from the average bond energy model, where the changes of the band offset due to alloy compositions and strain are included. It is found that Ge/G $e_{1-}$y S $n_{y(001)}$ heterostructure has a staggered lineup type for 0$\leq$0.06 and a straddling one for 0.06$\leq$0.26. Meanwhile, Ge/G $e_{l-y}$ S $n_{y(001)}$ heterostructure has a staggered lineup type for 0$\leq$0.19 and a broken-gap one for 0.19$\leq$0.26. As a result, the various type of the G $e_{1-}$x S $n_{x}$ G $e_{1-}$y S $n_{y(001)}$ heterostructure can be applied for the useful device.evice.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.305-305
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• 2013

태양전지는 무기태양전지와 유기태양전지 등이 연구 되고 있는데 [1] 그 중 유기물질의 장점(높은 수율, solution phase processing, 저비용으로 전력 생산)과 무기재료의 장점(높은 전자 이동도, 넓은 흡수 범위, 우수한 환경 및 열 안정성)을 융합함으로써 장기적 구조안정성의 확보와 광전변환의 고 효율화를 동시에 달성하기 위한 유기무기 하이브리드 태양전지가 최근 큰 관심을 끌고 있다[2]. 본 연구에서는 hybrid photovoltaics에 유기물 MDMO-PPV와 전도성 고분자 PEDOT:PSS를 무기물 GaN 위에 spin coating 하여 두께에 다른 효율을 측정하였다. 유기물 MDMO-PPV는 p-형으로 클로로벤젠, 톨루엔과 같은 유기 용매에 잘 녹으며 HOMO 5.33eV, LUMO 2.97eV, energy band gap 2.4eV이며 99.5%의 순도 물질을 사용하였다. 또한 정공 수송층(hole transport layer, HTL)으로 PEDOT:PSS를 사용하였으며, HOMO 5.0eV, LUMO 3.6eV, energy band gap 1.4eV를 가지며 증류수나 에탄올과 같은 수용성 용매에 잘 녹는 특성을 가지고 있다. 무기물은 III-V 족 물질 n-GaN(002)을 사용하였고 valence band energy 1.9eV, conduction band energy 6.3eV, energy band gap 3.4eV, 높은 전자 이동도와 높은 포화 속도, 광전자 소자에 유리한 광 전기적 특성을 가지고 있다. 기판으로는 GaN와 격자 부정합도와 열팽창계수 부정합도가 큰 Sapphire (Al2O3) 이종 기판을 사용하였다. 전극으로 Au를 사용하였으며 E-beam증착하였다. Reflector로서 Al를 thermal evaporator로 증착하였다 [3]. 실험 과정은 두께에 따른 효율을 알아보기 위해 MDMO-PPV를 900~1,500 rpm으로 spin coating 하였고, 열처리에 따른 효율을 알아보기 위해 열처리 온도 조건을 $110{\sim}170^{\circ}C$의 변화를 주었다. FE-SEM으로 표면과 단면을 관찰하였으며 J-V 특성을 알아보기 위해 각 샘플마다 solar simulator를 사용하여 측정하였고 그 결과를 논의하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.72.1-72.1
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• 2010

Thin film a-Si solar cells deposited by PECVD have many advantages compared to the traditional crystalline Si solar cells. They do not require expensive Si wafer, the process temperature is relatively low, possibility of scaling up for mass production, etc. In order to produce thin film solar cells, understanding the relationship between the material characteristics and deposition conditions is important. It has been reported by many groups that the band gap of the a-Si material and the deposition rate has an linear relationship, when RF power is used to control both. However, when the process pressure is changed in order to control the deposition rate and the band gap, a diversion from the well known linear relationship occurs. Here, we explain this diversion by the deposition condition crossing different plasma regions in the Paschen curve with a simple model. This model will become a guide to which condition a-Si thin films must be fabricated in order to get a high quality film.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.4
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• pp.402-406
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• 1988

The MgGa2Se4 single crystal for study of optical properties is for the first time grown by Bridgmna method. The crystal structure of grown MgGa2Se4 single crystal has the Rhomobohedral structure (R3m) and its lattice constant are a=3.950\ulcorner c=38.893\ulcornerin Hexagonal structure. The energy band structure of grown MgGa2Se4 single crystal structure has direct band gap and the optical energy gap measured from optical absorption in this crystal is 2.20eV at 290K. The temperature dependence of energy gap was given Eg(T)=Eg(O)-aT\ulcorner)B+T), from varshni equation, where Eg(O)=2.34eV, a=8.79x10**-4eV/and b=250K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.347-351
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• 2003

A p-$CdIn_2Te_4$ single crystal has been grown by the Bridgman method without a seed crystal in a tree-stage vertical electric furnace. From photocurrent measurements, it was found that three peaks, A, B, and C, corresponded to an intrinsic transition due to the band-to-band transition from the valence band states ${\Gamma}_7(A),\;{\Gamma}_6(B),\;and\;{\Gamma}_7(C)$ to the conduction band state ${\Gamma}_6$, respectively. Also, the valence band splitting of the $CdIn_2Te_4$ crystal has been confirmed by photocurrent spectroscopy. The crystal field splitting and the spin orbit splitting were obtained to be 0.2360 and 0.1119 eV, respectively. Also, the temperature dependence of the band gap energy of the $CdIn_2Te_4$ crystal has been driven as the following equation of $E_g(T)\;=E_g(0)\;-\;(9.43\;{\times}\;10^{-3})T^2/(2676\;+\;T)$. In this equation, the Eg(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band state A, B, and C, respectively. The band gap energy of the p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

• Current Applied Physics
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• v.18 no.12
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• pp.1583-1591
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• 2018

We analysed perovskite $CH_3NH_3PbI_{3-x}Cl_x$ inverted planer structure solar cell with nickel oxide (NiO) and spiroMeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.

• Proceedings of the KIEE Conference
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• 2000.07e
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• pp.56-59
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• 2000

$CdGaInS_4$ and $CdGaInS_4:Er^{3+}$ single crystals crystallized in the rhombohedral(hexagonal) structure. with lattice constants $a=3.913{\AA},\;c=37.245{\AA}$ for $CdGaInS_4$, and $a=3.899{\AA}$ and $c=36.970{\AA}$ for $CdGaInS_4:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct and indirect band gap. the direct and indirect energy gaps are found to be 2.771 and 2.503 eV for $CdGaInS_4$, and 2.665 and 2.479 eV for $CdGaInS_4:Er^{3+}$ at 10 K. The temperature dependence of the optical energy gap was well represented by the Varshni equation. In $CdGaInS_4$, the values of ${\alpha},\;{\beta}$ of the direct and the indirect energy gap were found to be $7.57{\times}10^{-4}eV/K$. $6.53{\times}10^{-4}eV/K$ and 240K. 197K. and the values of ${\alpha}$ and ${\beta}$ of the direct and the indirect energy gap in the $CdGaInS_4:Er^{3+}$ were given by $8.28{\times}10^{-4}eV/K,\;2.08{\times}10^{-4}eV/K$ and 425 K, 283 K, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.73-76
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• 2005

To widen the band gap of ZnO, we have investigated $Zn_{1-x}Mg_xO(ZMO)$ thin films prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$. From X-ray diffraction patterns, ZMO films show only the (0002) and (0004) diffraction peaks. It means that the flints have the wurtzite structure. Segregation of ZnO and MgO phases is found in the films with x=0.59. All the samples are highly transparent in the visible region and have a sharp absorption edge in the UV region. The shift of absorption edge to higher energy is observed in the films with higher Mg composition. The excitonic nature of the films is clearly appeared in the spectra for all alloy compositions. The optical band-gap ($E_g$) of ZMO films is obtained from the ${\alpha}^2$ vs Photon energy plot assuming ${\alpha}^2\;\propto$ (hv - $E_g$), where u is the absorption coefficient and hv is the photon energy. The value of $E_g$ increases up to 3.72 eV for the films with x=0.35. It is important to adjust Mg composition control for controlling the band-gap of ZMO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.121-122
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• 2007

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched sem-insulating GaAs(l00) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}l0^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155\;K)$.