• 제목/요약/키워드: electroplated Au

검색결과 24건 처리시간 0.046초

CMOS 이미지 센서용 Au 플립칩 범프의 초음파 접합 (Ultrasonic Bonding of Au Flip Chip Bump for CMOS Image Sensor)

  • 구자명;문정훈;정승부
    • 마이크로전자및패키징학회지
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    • 제14권1호
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    • pp.19-26
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    • 2007
  • 본 연구의 목적은 CMOS 이미지 센서용 Au 플립칩 범프와 전해 도금된 Au 기판 사이의 초음파 접합의 가능성 연구이다. 초음파 접합 조건을 최적화하기 위해서, 대기압 플라즈마 세정 후 접합 압력과 시간을 달리하여 초음파 접합 후 전단 시험을 실시하였다. 범프의 접합 강도는 접합 압력과 시간 변수에 크게 좌우되었다. Au 플립칩 범프는 상온에서 성공적으로 하부 Au 도금 기판과 접합되었으며, 최적 조건 하에서 접합 강도는 약 73 MPa이었다.

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금 합금 도금층의 접촉저항에 미치는 합금원소의 종류 및 Thermal Aging의 영향 (Effect of Alloying Elements and Thermal Aging on the Contact Resistance of Electroplated Gold Alloy Layers)

  • 이지웅;손인준
    • 한국표면공학회지
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    • 제46권6호
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    • pp.235-241
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    • 2013
  • In this study, the effects of alloying elements and thermal aging on the contact resistance of electroplated gold alloy layers were investigated by surface analysis using X-ray photoelectron spectroscopy (XPS). The contact resistance of Au-Ag alloy was lower than that of Au-Ni or Au-Co alloy after thermal aging. The XPS results show that nickel and oxygen present as nickel oxides such as NiO and $Ni_2O_3$ on the surface of gold layers after thermal aging. The increase in the contact resistance after thermal aging is attributable to the nickel oxide layer formed on the surface of the gold layers. The content of nickel diffused from the underlayer during the thermal aging was high in the order of Au-Co, Au-Ni and Au-Ag alloy because the area of grain boundary was large in the order of Au-Ag, Au-Ni and Au-Co alloy.

Au-Fe합금 도금층의 접촉저항에 미치는 Fe함량의 영향 (Effect of Fe content on the contact resistance of electroplated Au-Fe alloy layers)

  • 박현순;손인준
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2015년도 추계학술대회 논문집
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    • pp.350-350
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    • 2015
  • 본 연구는 Fe함량에 따른 Au-Fe합금 도금층의 접촉저항을 알아보는 것이 목적이다. 이를 위해 Fe함량을 다르게 하여 Au-Fe합금 도금층을 가진 시편을 제작하고 열처리를 실시한 후 접촉저항을 비교하였다. 그 결과 Fe함량이 증가할수록 접촉저항이 증가하는 것을 알 수 있었다.

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연성인쇄회로기판 상에 Au 스터드 플립칩 범프의 초음파 접합 (Ultrasonic Bonding of Au Stud Flip Chip Bump on Flexible Printed Circuit Board)

  • 구자명;김유나;이종범;김종웅;하상수;원성호;서수정;신미선;천평우;이종진;정승부
    • 마이크로전자및패키징학회지
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    • 제14권4호
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    • pp.79-85
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    • 2007
  • 본 연구의 목적은 OSP, 전해 Au과 무전해 Ni/Au로써 표면처리를 달리한 연성회로기판 상에 Au 스터드 플립칩 범프의 초음파 접합 가능성을 연구하는 것이었다. Au 스터드 범프는 표면처리 방법에 상관없이 성공적으로 연성회로기판의 패드 상에 초음파 접합되었다 접합 강도는 접합 시간에 민감하게 영향을 받았다. 접합 시간이 길어짐에 따라 접합 강도는 증가하였으나, 2초 이상의 접합 시간에서는 이웃 범프끼리 단락되는 bridge 현상이 발생하였다. 최적 접합조건은 OSP 처리된 가판상에 0.5초간 초음파 접합하는 것이었다.

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도금전류밀도 및 도금액 온도에 따른 비시안계 Au 범프의 표면 형상과 높이 분포도 (Surface Morphology and Thickness Distribution of the Non-cyanide Au Bumps with Variations of the Electroplating Current Density and the Bath Temperature)

  • 최은경;오태성
    • 마이크로전자및패키징학회지
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    • 제13권4호
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    • pp.77-84
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    • 2006
  • 도금전류밀도와 도금액 온도에 따른 비시안계 Au 범프의 표면 거칠기 및 웨이퍼 레벨에서 Au 범프의 높이 분포도를 분석하였다. $3mA/cm^{2}$$5mA/cm^{2}$에서 도금한 Au 범프는 $40^{\circ}C$$60^{\circ}C$의 도금액 온도에 무관하게 $80{\sim}100nm$의 낮은 표면 거칠기를 나타내었다. $8mA/cm^{2}$로 도금시 $40^{\circ}C$에서 도금한 Au 범프는 표면 거칠기가 800nm 정도로 크게 증가하였으나, $60^{\circ}C$에서 형성한 Au 범프는 $80{\sim}100nm$의 표면 거칠기를 나타내었다. 도금전류밀도가 $3mA/cm^{2}$에서 $8mA/cm^{2}$로 증가함에 따라 웨이퍼 레벨에서 Au 범프의 높이 편차가 증가하였으며, 도금액 온도가 $40^{\circ}C$보다 $60^{\circ}C$일 때 웨이퍼 레벨에서 더 균일한 범프 높이의 분포도를 얻을 수 있었다.

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BGA 및 Flip Chip 패키지의 볼전단 특성에 미치는 시험변수의 영향 (Effect of Test Parameter on Ball Shear Properties for BGA and Flip Chip Packages)

  • 구자명;정승부
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2005년도 춘계학술발표대회 개요집
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    • pp.19-21
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    • 2005
  • The ball shea. tests for ball grid array (BGA) and flip chip packages were carried out with different displacement rates to find out the optimum condition of the displacement rate for this test. The BGA packages consisted of two different kinds of solder balls (eutectic Sn-37wt.%Pb and Sn-3.5wt.%Ag) and electroplated Au/Ni/Cu substrate, whereas the flip chip package consisted of electroplated Sn-37Pb solder and Cu UBM. The packages were reflowed up to 10 times, or aged at 443 K up to 21 days. The variation of the displacement rate resulted in the variations of the shear properties such as shear force, displacement rate at break, fracture mode and strain rate sensitivity. The increase in the displacement rate led to the increase of the shear force and brittleness of solder joints.

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MEMS 공정 제작방법에 의한 솔레노이드형 여자 코일과 검출코일을 사용한 마이크로 플럭스게이트 센서 (MEMS-BASED MICRO FLUXGATE SENSOR USING SOLENOID EXCITATION AND PICK-UP COILS)

  • 나경원;박해석;심동식;최원열;황준식;최상인
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.172-176
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    • 2002
  • This paper describes a MEMS-based micro-fluxgate magnetic sensing element using Ni$\_$0.8/Fe$\_$0.2/ film formed by electroplating. The micro-fluxgate magnetic sensor composed of a thin film magnetic core and micro-structured solenoids for the pick-up and the excitation coils, is developed by using MEMS technologies in order to take advantage of low-cost, small size and lower power consumption in the fabrication. A copper with 20um width and 3um thickness is electroplated on Cr(300${\AA}$)/Au(1500${\AA}$) films for the pick-up(42turn) and the excitation(24turn) coils. In order to improve the sensitivity of the sensing element, we designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. An electroplated permalloy film with the thickness of 3 $\mu\textrm{m}$ is obtained under 2000Gauss to induce magnetic anisotropy. The magnetic core has the high DC effective permeability of ∼1,100 and coercive field of -0.1Oe. The fabricated sensing element using rectangular-ring shaped magnetic film has the sensitivity of about 150V/T at the excitation frequency of 2MHz and the excitation voltage of 4.4Vp-p. The power consumption is estimated to be 50mW.

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무연 도금 솔더의 특성 연구: Sn-Cu 및 Sn-Pb 범프의 비교 (Study on the Characteristics of Electroplated Solder: Comparison of Sn-Cu and Sn-Pb Bumps)

  • 정석원;정재필
    • 한국표면공학회지
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    • 제36권5호
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    • pp.386-392
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    • 2003
  • The electroplating process for a solder bump which can be applied for a flip chip was studied. Si-wafer was used for an experimental substrate, and the substrate were coated with UBM (Under Bump Metallization) of Al(400 nm)/Cu(300 nm)Ni(400 nm)/Au(20 nm) subsequently. The compositions of the bump were Sn-Cu and eutectic Sn-Pb, and characteristics of two bumps were compared. Experimental results showed that the electroplated thickness of the solders were increased with time, and the increasing rates were TEX>$0.45 <\mu\textrm{m}$/min for the Sn-Cu and $ 0.35\mu\textrm{m}$/min for the Sn-Pb. In the case of Sn-Cu, electroplating rate increased from 0.25 to $2.7\mu\textrm{m}$/min with increasing current density from 1 to 8.5 $A/dm^2$. In the case of Sn-Pb the rate increased until the current density became $4 A/dm^2$, and after that current density the rate maintains constant value of $0.62\mu\textrm{m}$/min. The electro plated bumps were air reflowed to form spherical bumps, and their bonded shear strengths were evaluated. The shear strength reached at the reflow time of 10 sec, and the strength was of 113 gf for Sn-Cu and 120 gf for Sn-Pb.

MEMS 공정 제작방법에 의한 솔레노이드형 여자 코일과 검출코일을 사용한 마이크로 플럭스게이트 센서 (MEMS-based Micro Fluxgate Sensor Using Solenoid Excitation and Pick-up Coils)

  • 나경원;박해석;심동식;최원열;황준식;최상언
    • 한국전기전자재료학회논문지
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    • 제16권2호
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    • pp.120-124
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    • 2003
  • This paper describes a MEMS-based micro-fluxgate magnetic sensing element using Ni$\_$0.8/Fe$\_$0.2/ film formed by electroplating. The micro-fluxgate magnetic sensor composed of a thin film magnetic core and micro-structure solenoids for the pick-up and the excitation coils, is developed by using MEMS technologies in order to take advantage of low-cost, small size and lower power consumption in the fabrication. A copper with 20${\mu}$m width and 3${\mu}$m thickness is electroplated on Cr (300${\AA}$) / Au (1500${\AA}$) films for the pick-up (42turn) and the excitation (24turn) coils. In order to improve the sensitivity of the sensing element, we designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. An electroplated permalloy film with the thickness of 3${\mu}$m is obtained under 2000 gauss to induce magnetic anisotropy. The magnetic core has the high DC effective permeability of ~1,100 and coercive field of ~0.1 Oe. The fabricated sensing element using rectangular-ring shaped magnetic film has the sensitivity of about 150 V/T at the excitation frequency of 2 MHz and the excitation voltage of 4.4 V$\_$p p/. The power consumption is estimated to be 50mW.