• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.69-75
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• 2003

Cell transistor and data retention time characteristics were studied in 90 nm design rule 512M-bit DRAM, for the first time. And, the characteristics of cell transistor are investigated for different STI gap-fill materials. HDP oxide with high compressive stress increases the threshold voltage of cell transistor, whereas the P-SOG oxide with small stress decreases the threshold voltage of cell transistor. Stress between silicon and gap-fill oxide material is found to be the major cause of the shift of the cell transistor threshold voltage. If high stress material is used for STI gap fill, channel-doping concentration can be reduced, so that cell junction leakage current is decreased and data retention time is increased.

• Journal of Information Display
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• v.11 no.2
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• pp.49-51
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• 2010

Nanoimprint lithography (NIL) using ultraviolet (UV) rays is a technique in which unconventional lithographic patterns are formed on a substrate by curing a suitable liquid resist in contact with a transparent patterned mold, then releasing the freshly patterned material. Here, various solutions are introduced to achieve sufficient overlay accuracy and to overcome the technical challenges in resist patterning via UV imprinting. Moreover, resist patterning of all the layers in TFT and of the BM layer in CF was carried out using UV imprinting lithography to come up with a 12.1-inch TFT-LCD panel with a resolution of $1280{\times}800$ lines (125 ppi).

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.91-91
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.61.2-61.2
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• 2007

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2006.07a
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• pp.548-548
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• 2006

• 한국전기화학회:학술대회논문집
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• 2004.04a
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• pp.19-19
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• 2004

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.701-701
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• 2003

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2004.07a
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• pp.461-461
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• 2004

• Nuclear Engineering and Technology
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• v.56 no.7
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• pp.2799-2805
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• 2024

Energy-resolved neutron imaging is an effective way to investigate the internal structure and residual stress of materials. Different sample sizes have varying requirements for the detector's imaging field of view (FOV) and spatial resolution. Therefore, a dual-mode energy-resolved neutron imaging detector was developed, which mainly consisted of a neutron scintillator screen, a mirror, imaging lenses, and a time-stamping optical fast camera. This detector could operate in a large FOV mode or a high spatial resolution mode. To evaluate the performance of the detector, the neutron wavelength spectra and the multiple spatial resolution tests were conducted at CSNS. The results demonstrated that the detector accurately measured the neutron wavelength spectra selected by a bandwidth chopper. The best spatial resolution was about 20 ㎛ in high spatial resolution mode after event reconstruction, and a FOV of 45.0 mm × 45.0 mm was obtained in large FOV mode. The feasibility was validated to change the spatial resolution and FOV by replacing the scintillator screen and adjusting the lens magnification.

• ETRI Journal
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• v.35 no.3
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• pp.554-557
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• 2013

This letter presents a power amplifier (PA) with an on-chip power detector for 2.4-GHz wireless local area network application. The power detector consists of a clamp circuit, a diode detector, and a coupled line directional coupler. A series inductor for an output matching network in the PA is combined with a through line of the coupler, which reduces the coupling level. Therefore, the coupler employs a metamaterial-based transformer configuration to increase coupling. The amount of coupling is increased by 2.5 dB in the 1:1 symmetric transformer structure and by 4.5 dB from two metamaterial units along the coupled line.