• Electrical & Electronic Materials
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• v.9 no.8
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• pp.789-798
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• 1996

The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.

• Current Optics and Photonics
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• v.5 no.6
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• pp.597-605
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• 2021

An extended Fourier modal method (FMM) for optical dipole radiation in three-dimensional photonic structures is proposed. The core elements of the proposed FMM are the stable bidirectional scattering-matrix algorithm for modeling internal optical emission, and a novel optical-dipole-source model that prevents numerical errors induced by the Gibbs phenomenon. Through the proposed scheme, the FMM is extended to model a wide range of source-embedded photonic structures.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.682-685
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• 2002

In this paper, we defined necessary operations and functional blocks of a multiplexer for 3-D video systems and present our multiplexer design. We adopted the ITU-T's recommendation(H.222.0) to define the operations and functions of the multiplexer and explained the data structures and details of the design for multiview image processing. The data structure of TS(Transport Stream) and PES (Packetized Elementary Stream) in ITU-T Recommendation H.222.0 does not fit our multiview image processing system, because this recommendation is fur wide scope of transmission of non-telephone signals. Therefore, we modified these TS and PES stream structures. The TS is modified to DSS(3D System Stream) and PES is modified to SPDU(DSS Program Data Unit). We constructed the multiplexer through these modified DSS and SPDU. The number of multiview image channels is nine, and the image class employed is MPEG-2 SD(Standard Definition) level which requires a bandwidth of 2∼6 Mbps. The required clock speed should be faster than 54(= 6 ${\times}$ 9)㎒ which is the outer interface clock speed. The inside part of the multiplexer requires a clock speed of only 1/8 of 54㎒, since the inside part of the multiplexer operates by the unit of byte. we used ALTERA Quartus II and the FPGA verification for the simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.547-550
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• 2014

In this study, the electrical characteristics of the nickel (Ni)/carbon nanotube (CNT)/$SiO_2$ structures were investigated in order to analyze the mechanism of CNT in MOS device structures. We fabricated 4H-SiC MOS capacitors with or without CNTs. CNT was dispersed by isopropyl alcohol. The capacitance-voltage (C-V) and current-voltage (I-V) are characterized. Both devices were measured by Keithley 4200 SCS. The experimental flatband voltage ($V_{FB}$) shift was positive. Near-interface trap charge density ($N_{it}$) and negative oxide trap charge density ($N_{ox}$) value of CNT embedded MOS capacitors was less than that values of reference samples. Also, the leakage current of CNT embedded MOS capacitors is higher than reference samples. It has been found that its oxide quality is related to charge carriers and/or defect states in the interface of MOS capacitors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.345-348
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• 2012

The optical losses associated with the reflectance of incident radiation are among the most important factors limiting the efficiency of a solar cell. Therefore, photovoltaic cells normally require special surface structures or materials, which can reduce reflectance. In this study, nano-scale textured structures with anti-reflection properties were successfully formed on silicon. The surface of sicon wafer was etched by the inductively coupled plasma process using the gaseous mixture of $SF_6+O_2$. We demonstrate that the reflection characteristic has significantly reduced by ~0% compared with the flat surface. As a result, the power efficiency $P_{max}$ of the nano-scale textured silicon solar cell were enhanced up to 20%, which can be ascribed primarily to the improved light trapping in the proposed nano-scale texturing.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.250-255
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• 2007

The alloying effects on the electronic structures of Zinc are investigated using the relativistic $DV-X{\alpha}molecular$ orbital method in order to obtain useful information for alloy design. A new parameter which is the d obital energy level(Md) and the bonder order(Bo) of alloying elements in Zinc was introduced and used for prediction of the mechanical properties. The Md correlated with the atomic radius and the electronegativity of elements. The Bo is a measure of the strength of the covalent bond between M and X atoms. First-principles calculations of electronic structures were performed with a series of models composed of a MZn18 cluster and the electronic states were calculated by the discrete variational- $X{\alpha}method$ by using the program code SCAT. The central Zinc atom(M) in the cluster was replaced by various alloying elements. In this study energy level structures of pure Zinc and alloyed Zinc were calculated. From calculated results of energy level structures in MZn18 cluster, We found Md and Bo values for various elements of Zn. In this work, Md and Bo values correlated to the tensile strength for the Zn. These results will give some guide to design of zinc based alloys for high temperature applications and it is possible the excellent alloys design.

• Proceedings of the Korean Magnestics Society Conference
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• 1998.05a
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• pp.124-124
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• 1998

• Proceedings of the Korean Magnestics Society Conference
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• 1993.11a
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• pp.32-33
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• 1993

• Proceedings of the Korean Magnestics Society Conference
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• 1993.11a
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• pp.30-31
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• 1993

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.0114-115
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• 1995