• ETRI Journal
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• 제37권2호
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• pp.348-358
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• 2015

Mobile devices have been widespread and become very popular with connectivity to the Internet, and a lot of desktop PC applications are now aggressively ported to them. Unfortunately, mobile devices are often vulnerable to malicious attacks due to their common usage and connectivity to the Internet. Therefore, the demands on the development of mobile security systems increase in accordance with advances in mobile computing. However, it is very hard to run a security program on a mobile device all of the time due the device's limited computational power and battery life. To overcome these problems, we propose a novel mobile security scheme that migrates heavy computations on mobile devices to cloud servers. An efficient data transmission scheme for reducing data traffic between devices and servers over networks is introduced. We have evaluated the proposed scheme with a mobile device in a cloud environment, whereby it achieved a maximum speedup of 13.4 compared to a traditional algorithm.

• 한국통신학회논문지
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• 제38A권6호
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• pp.504-511
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• 2013

본 논문은 지적재산권 보호를 위한 방안으로 적응형 알고리즘 기반의 초소형 전자소자 탐지 기법을 제안한다. 전자소자를 탐지하는 기본 원리는 분류기의 송신기에서 특정 기본 주파수의 전파가 은닉된 물체로 전파되면, 물체로부터 반사되어 수신기로 들어오는 2차 및 3차 고조파의 크기를 분류기가 비교함으로써 판별하게 된다. 하지만, 측정 과정에서 발생하는 잡음 및 전자파의 간섭으로 인해 분류의 성능이 저하되므로, 이러한 환경에서도 은닉된 전자소자를 적응적으로 판별하기 위해 Fuzzy c-Means 클러스터링 알고리즘과 ${\kappa}$-Nearest Neighbor 분류 알고리즘을 복합적으로 이용하는 방안을 제시한다. 모의실험 결과, 제안 기법이 잡음 및 전자파 간섭 환경에서도 적응적으로 전자소자 잘 탐지할 수 있었으며, 이에 따라 지적재산권을 효율적으로 보호할 수 있을 것으로 기대된다.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.638-644
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• 2010

We have carry out numerical simulation of the electric-optical characteristics of organic light emitting diodes with gradient-doped emitting layer which were reported to be effective in improving luminous efficiency and lifetime. In this paper, the basic structure is comprised of ITO/NPB/$Alq_3$:C545T[%]/$Alq_3$/LiF/Al, six devices by separating the emitting layer of $Alq_3$:C545T[%] were studied. As the result, the uniformly-doped devices exhibited superior luminous efficiency-current density characteristics over conventional undoped device. In the case of gradient-doped devices, electric-optical characteristics were improved similar to uniformed-doped devices, unusually the distribution of traped-charge density in the OLED devices was shown as the staircase.

• ETRI Journal
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• 제32권2호
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• pp.319-326
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• 2010

Photonics offers a solution to data communication between logic devices in computing systems; however, the integration of photonic components into electronic chips is rather limited due to their size incompatibility. Dimensions of photonic components are therefore being forced to be scaled down dramatically to achieve a much higher system performance. To integrate these nano-photonic components, surface plasmon-polaritons and/or energy transfer mechanisms are used to form plasmonic chips. In this paper, the operating principle of plasmonic waveguide devices is reviewed within the mid-infrared spectral region at the 2 ${\mu}m$ to 5 ${\mu}m$ range, including lossless signal propagation by introducing gain. Experimental results demonstrate that these plasmonic devices, of sizes approximately half of the operating free-space wavelengths, require less gain to achieve lossless propagation. Through optimization of device performance by means of methods such as the use of new plasmonic waveguide materials that exhibit a much lower minimal loss value, these plasmonic devices can significantly impact electronic systems used in data communications, signal processing, and sensors industries.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 센서 박막재료
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• pp.43-46
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• 2001

The ZnO devices using semiconductor properties, to include $MnO_2$, $Y_2O_3$ and other material, was fabricated by $Sb_2O_3$ mol ratio from 1 to 4 [mol%]. The non-linearity factor was calculated by setting current to be $1[mA/cm^2]$ and $10[mA/cm^2]$. The spinel structure was fonned by $Sb_2O_3$ addition and it was depressed the ZnO grain formation. The grain growing was controlled by spinel structure that has improved the non-linearity factors. The breakdown voltage characteristics of semiconductor devices to increase with $Sb_2O_3$ was increased in voltage-current. The non-linearity value of ZnO semiconductor devices was 45 over.

• Transactions on Electrical and Electronic Materials
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• 제6권4호
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• pp.140-143
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• 2005

Carbon Nanotube(CNTs) counter electrode is a promising alternative to Platinum counter electrode for dye sensitized solar cells (DSSCs). In this study, CNT counter electrodes having different visible light transmittance were prepared on fluorine-doped tin oxide (FTO) glass surface by spray coating method. Microstructural images show that there are CNT-tangled region coated on FTO glass counter electrodes. Using such CNT counter electrodes and screen printed $TiO_2$ electrodes, DSSCs were assembled and its I-V characteristics have been studied and compared. Light energy conversion efficiency of DSSCs increased with decreasing in light transmittance of CNT counter electrode. Efficiency of DSSCs having CNT counter electrode is compatible to that of Pt counter electrode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.178-181
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• 2001

The organic light-emitting devices (OLEDs) based on fluorescence have low efficiencies due to the requirement of spin-symmetry conservation. By using the phosphorescent material, the internal quantum efficiency can reach 100 %, compared to 25 % in the case of the fluorescent material. Thus, the phosphorescent OLEDs have recently been extensively studied and showed higher internal quantum efficiencies then the conventional OLEDs. In this study, we investigated the characteristics of the phosphorescent OLEDs, with the green emitting phosphor, Ir(ppy)$_3$ (tris(2-phenylpyridine)iridium). The devices with a structure of ITO/TPD/Ir(PPy)$_3$ doped in the host material/BCP/Alq$_3$/Li:Al/Al were fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of Ir(PPy)$_3$ and the host materials, we fabricated several devices and investigated the device characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.243-246
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• 2001

Thyristor devices have 3-dimensional complicated structure and were sensitive to temperature characteristics. Therefore, it was difficult to optimize thyristor devices design. We have to consider many design parameter to characterize, and trade-off relations. The important parameters to design thyristor devices are cathode structure, effective line width, cathode-emitter shunt structure, gate structure, doping profile and carrier lifetime. So, we must consider that these design parameters were not acted separately. However, there are many difficulties to determine optimized design parameters by experiment. So, We used specific design software to design thyristor devices, and estimated the thyristor devices characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.214-217
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• 2002

The internal quantum efficiency of organic light emitting devices(OLEDs) using fluorescent organic materials is limited within 25% because of the triplet excitons which can hardly emit light. So there has been considerable interest in finding ways to obtain light emission from triplet excitons. One approach has been to add phosphorescent compounds to one of the layers in OLEDs. Then triplet excitons can transfer to these phosphorescent molecules and emit light. In this study, multilayer OLEDs with phosphorescent emitter, Iridium complexes were prepared. The devices with a structure of ITO/TPD/Ir complex doped in the host material/Alq3/Li:Al/Al were fabricated, and its electrical and optical characteristics were studied. Using various Ir complexes and the host materials, we fabricated several devices and investigated the device characteristics.

• 한국안전학회지
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• 제15권4호
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• pp.62-68
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• 2000

Static electricity in electronics manufacturing plants causes the economic loss, yet it is one of the least understood and least recognized effects haunting the industry today. Today's challenge in semiconductor devices is to achieve greater functional density pattern and to miniaturize electronic systems of being more fragile by electrostatic discharges(ESD) phenomena. As the use of automatic handling equipment for static-sensitive semiconductor components is rapidly increased, most manufacturers need to be more alert to the problem of ESD. One of the most common causes of electrostatic damage is the direct transfer of electrostatic charge from the human body or a charged material to the static-sensitive devices. To evaluate the ESD hazards by charged human body and devices, in this paper, characteristics of electrostatic attenuation in domestic semiconductor devices is investigated and the voltage to cause electronic component failures is investigated by field-induced charged device model(FCDM) tester. The FCDM simulator provides a fast and inexpensive test that faithfully represents ESD hazards in plants. Also the results obtained in this paper can be used for the prevention of semiconductor failure from ESD hazards.