• Title/Summary/Keyword: electronic and magnetic structure

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A Study of Characteristic of Electrical-magnetic and Neutron Diffraction of Long-wire High-superconductor for Reducing Energy Losses

  • Jang, Mi-Hye
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.6
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    • pp.265-272
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    • 2008
  • In this paper, AC losses of long wire Bi-2223 tapes with different twist pitch of superconducting core were fabricated, measured and analyzed. These samples produced by a powder-in-tube method are multi-filamentary tape with Ag matrix. Also, it's produced by non-twist. The critical current measurement was carried out under the environment in Liquid nitrogen and in zero field by 4-prob method. And the Magnetic measurement was carried out under the environment of applied time-varying transport current by transport method. From experiment, the susceptibility measurements were conducted while cooling in a magnetic field. Flux loss measurements were conducted as a function of ramping rate, frequency and field direction. The AC flux loss increases as the twist-pitch of the tapes decreased, in agreement with the Norris Equation. Neutron-diffraction measurements have been carried out investigate the crystal structure, magnetic structures, and magnetic phase transitions in Bi-2223([Bi, Pb]:Sr:Ca:Cu:O).

Nanocomposite magnetic powder materials using mechanochemical Synthesis

  • Soh, Dae-Wha;Mofa, N.N.;Keteguenov, T.A.;Mansurov, Z.A.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.585-587
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    • 2002
  • The materials showing high structure dispersity are developed on the quartz base and they are obtained by mechano-chemical technology. Depending on the processing conditions and subsequent applications the materials produced by mechano-chemical reaction show concurrently magnetic, dielectric and electrical properties. The obtained magnetic-electrical powders classified by aggregate complex of their features as segnetomagnetics, contain a dielectric material as a canγing nucleus, particularly the quartz on that surface one or more layers of different compounds are synthesized having thickness up to 10~50 nm and showing magnetic, electrical and other properties.

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Fabrication of a SOI hall sensor using Si-wafer direct bonding technology and its characteristics (실리콘기판 직접접합기술을 이용한 SOI 홀 센서의 제작과 그 특성)

  • 정귀상
    • Electrical & Electronic Materials
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    • v.8 no.2
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    • pp.165-170
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    • 1995
  • This paper describes the fabrication and characteristics of a Si Hall sensor fabricated on a SOI (Si-on-insulator) structure. The SOI structure was formed by SDB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall sensor. The Hall voltage and sensitivity of the implemented SDB SOI Hall sensors showed good linearity with respect to the applied magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall sensor was average 600V/A.T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10.mu.m. Moreover, this sensor can be used at high-temperature, high-radiation and in corrosive environments.

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Properties of CoCrTa Thin Film Introduce Two Step methode and Amorphous Si Under Layer for Perpendicular Magnetic Recording Media (Two Step방식과 아몰퍼스 Si 하지층 도입에 따른 수직자기기록 매체용 CoCrTa 박막의 특성 평가)

  • Park, Won-Hyo;Kim, Kyung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.550-552
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    • 2003
  • We prepared $Co_{77}Cr_{20}Ta_3$ Magnetic layer for perpendicular magnetic recording media with introduce Two-step methode and Amorphous Si Underlayer on slide glass substrate. The thickness of magnetic layer were 100nm, and Underlayer were varied from 5 to 100 nm. The multi layer Properties of crystal structure were examined with XRD. Prepared thin films showed improvement of dispersion angle of c-axis orientation ${\Delta}{\theta}_{50}$ caused by inserting Buffer-layer and amorphous Si underlayer.

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Magnetic Characteristics of an InSb Hall Device of Multilayerd Structure (다충구조 InSb 홀소자의 제작과 특성)

  • 이우선;김상용;서용진;박진성;김창일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.8
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    • pp.681-687
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    • 2000
  • Magnetic Characteristics of an InSb hall device of multilayered structures were investigated. For the measurement of electrical properties of the hall device InSb thin films fabricated with series and parallel multilayers wee evaporated. Hall coefficient hall mobility carrier density and hall voltage were measured as a function of the intensity of magnetic field. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$ 60 minutes. Resistance of ohmic contact was increased linearly due to increasing current. Hall voltages at 0.01 T showed 5$\times$10$^{-4}$ [V] and $1.5\times$10$^{-3}$ [V]. Some of device fabrication technique and analysis of magnetic characteristics were discussed.

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Mechanical and thermodynamic stability, structural, electronics and magnetic properties of new ternary thorium-phosphide silicides ThSixP1-x: First-principles investigation and prospects for clean nuclear energy applications

  • Siddique, Muhammad;Iqbal, Azmat;Rahman, Amin Ur;Azam, Sikander;Zada, Zeshan;Talat, Nazia
    • Nuclear Engineering and Technology
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    • v.53 no.2
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    • pp.592-602
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    • 2021
  • Thorium compounds have attracted immense scientific and technological attention with regard to both fundamental and practical implications, owing to unique chemical and physical properties like high melting point, high density and thermal conductivity. Hereby, we investigate the mechanical and thermodynamic stability and report on the structural, electronic and magnetic properties of new silicon-doped cubic ternary thorium phosphides ThSixP1-x (x = 0, 0.25, 0.5, 0.75 and 1). The first-principles density functional theory procedure was adopted within full-potential linearized augmented plane wave (FP-LAPW) method. The exchange and correlation potential terms were treated within Generalized-Gradient-Approximation functional modified by Perdew-Burke-Ernzerrhof parameterizations. The proposed compounds showed mechanical and thermodynamic stable structure and hence can be synthesized experimentally. The calculated lattice parameters, bulk modulus, total energy, density of states, electronic band structure and spin magnetic moments of the compounds revealed considerable correlation to the Si substitution for P and the relative Si/P doping concentration. The electronic and magnetic properties of the doped compounds rendered them non-magnetic but metallic in nature. The main orbital contribution to the Fermi level arises from the hybridization of Th(6d+5f) and (Si+P)3p states. Reported results may have potential implications with regard to both fundamental point of view and technological prospects such as fuel materials for clean nuclear energy.

Electronic Structure and Half-Metallicity in the Zr2RuZ (Z = Ga, In, Tl, Ge, Sn, and Pb) Heusler Alloys

  • Eftekhari, A.;Ahmadian, F.
    • Journal of the Korean Physical Society
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    • v.73 no.9
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    • pp.1370-1376
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    • 2018
  • The electronic structures, magnetic properties and half-metallicity in $Zr_2RuZ$ (Z = Ga, In, Tl, Ge, Sn, and Pb) alloys with $AlCu_2Mn-$ and $CuHg_2Ti$-type structures were investigated using first-principles density functional theory (DFT) calculations. The calculations showed that $Zr_2RuIn$, $Zr_2RuTl$, $Zr_2RuSn$, and $Zr_2RuPb$ compounds with $CuHg_2Ti$-type structures were half-metallic ferromagnets with half-metallic band gaps of 0.18, 0.24, 0.22, and 0.27 eV, respectively. The half-metallicity originated from d-d and covalent hybridizations between the transition metals Zr and Ru. The total magnetic moments of the $Zr_2RuZ$ (Z = In, Tl, Sn, and Pb) compounds with $CuHg_2Ti$-type structures were integer values of $1{\mu}B$ and $2{\mu}B$, which is in agreement with Slater-Pauling rule ($M_{tot}=Z_{tot}-18$). Among these compounds, $Zr_2RuIn$ and $Zr_2RuTl$ were half-metals over relatively wide regions of the lattice constants, indicating that these two new Heusler alloys are ideal candidates for use in spintronic devices.

Influence of a Magnetic Field on High voltage Discharge Plasma Area for Carbon Nitride Film Deposition (질환탄소 박막 증착 시 고전압 방전 플라즈마에 가한 자장의 영향)

  • 김종일;배선기
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.2
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    • pp.184-189
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    • 2002
  • Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with/without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increased of a crystallite size int he films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. The surface morphology of the films with a deposition time of 2 hours was studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

Design and Fabrication of Printed Circuit Board (PCB) Integrated Energy Harvester (PCB 일체형 에너지 하베스터의 설계 및 제작)

  • Min, Chul Hong;Kim, Tae Seon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.11
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    • pp.846-851
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    • 2013
  • Recently, energy harvesting technologies are considered as the great alternatives to reduce the dependency on secondary batteries. In this paper, we proposed PCB type energy harvester which can be directly integrated with other electronic components on same board. To form the three dimensional coil structure, two PCBs with patterned metal lines are solder bonded. For magnetic induction, inside of coil structure was filled with magnetic substance and rotary motioned external magnets are applied to near the harvester. The effects of metal wire width on PCB, thickness of magnetic substance, and frequency of rotary motion on energy harvesting performance are analyzed by computer simulation and experiments. Experimental results showed 29.89 ${\mu}W$ of power generation performance at the frequency of 5.2 Hz and it is shown that designed harvester can be effectively applied on vibration environment with very limited frequency.

The Electronic Structure Calculations for Hexagonal Multiferroic Materials (다중강전자 상태를 가진 육방정계물질의 전자구조 계산)

  • Park, Key-Taeck
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.152-155
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    • 2007
  • We have studied electronic structures and magnetic properties of $YMnO_3,\;ScManO_3$ with hexagonal structure using Full Potential Linearized Augmented Plane Wave (FLAPW) method based on LSDA method. LSDA calculation results show that multiferroic $YMnO_3$ shows energy gap due to hexagonal symmetry and magnetic interaction. Because of insulating gap and small Y ion, $YMnO_3$ shows magnetic and ferroelectric state. However, $ScMnO_3$ does not show the energy gap because of strong hybridization of Mn-O for LSDA calculation. We confirmed the stability of multiferroic state for $YMnO_3\;and\;ScManO_3$ using total energy calculations. The antiferromagnetic and ferroelectric states have the lowest energy about 100 meV.