• 한국기계가공학회지
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• 제19권10호
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• pp.8-15
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• 2020

The diffusion cell method is the main technique employed for the in vitro diffusion test of transdermal drug delivery preparations. Most existing transdermal diffusion devices use a water bath heating structure and direct current motor magnetic stirrer. However, these devices are confronted with problems, such as large volume, incompatible vertical and horizontal diffusion cells, few diffusion cell sets, and poor reliability. To overcome these deficiencies, the system adopts a dry heating method and uses a rotating magnetic field generated by the electromagnetic stirrer to drive the magnetic stirrer. Accordingly, the resulting device is characterized by a simple structure and small volume, convenient operation, compatible vertical and horizontal diffusion cells, and numerous diffusion cell sets. The reliability and practicability of the system is verified by the in vitro percutaneous permeability test of the bisoprolol patch.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.782-784
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.70.2-70.2
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• 2007

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.38.2-38.2
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• 2007

• Journal of Electrical Engineering and Technology
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• 제11권1호
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• pp.93-99
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• 2016

The present study aims to increase the amount of surface flux by changing the magnetic directions of a spherical magnet (NdFeB) consisting of four poles. For this purpose, the magnetic directions of quartile spherical slices constituting the spherical magnet are manipulated and their three-dimensional analyses are carried out by using finite-element method via Maxwell environment. The analysis of the magnetic quartile spheres with four different magnetic directions are compared to the each other, and then the quartile sphere with the best surface flux distribution is suggested for rotor structure. It is clear emphasized that the induced torque of the spherical motor, in which such a rotor is used, will be improved as well.

• 제어로봇시스템학회논문지
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• 제12권4호
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• pp.358-363
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• 2006

This paper demonstrates a new non-contact electronic joystick using single hall sensor which detects a horizontal vector of the magnetic field. Furthermore, in this paper, it is mathematically modeled that nonlinear characteristics between the output of hall sensor and the movement of joystick bar. The dynamic horizontal vector of magnetic flux is detected by the hall sensor while a permanent magnet is rotated with the joystick bar, which has two dimension detecting area. Using the nonlinear adjustment equations, the output signals of hall sensor have been linearized to give higher accuracy in the two dimension movement. Finally, through the real experiments, it is showed that the single hall sensor structure mechanism is superior to the dual sensor structure in sensing the two-dimensional motion without offset.

• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.92-98
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• 2015

The magnetoelectric characteristics on layered Ni-PZT-Ni, Co, Fe composites by epoxy bonding for magnetic field sensor were investigated in the low-frequency range. The ME coefficient of Ni-PZT-Ni, Ni-PZT-Co and Ni-PZT-Fe composites reaches a maximum of $200mV/cm{\cdot}Oe$ at $H_{dc}=110$ Oe, $106mV/cm{\cdot}Oe$ at $H_{dc}=90$ Oe and $87mV/cm{\cdot}Oe$ at $H_{dc}=160$ Oe, respectively. A trend of ME charateristics on Ni-PZT-Co, Ni-PZT-Fe composites was similar to that of Ni-PZT-Ni composites. The ME output voltage shows linearly proportional to ac field $H_{ac}$ and is about 0~150 mV at $H_{ac}$=0~7 Oe and f=110 Hz in the typical Ni-PZT-Ni sample. The frequency shift effect due to the load resistance $R_L$ shows that the frequency range for magnetic field sensor application can be modulated with appropriate load resistance $R_L$. This sample will allow for a low-magnetic ac field sensor in the low-frequency (near f=110 Hz).

• 한국자기학회지
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• 제19권3호
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• pp.81-84
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• 2009

상관효과 U가 전자구조와 자성에 미치는 영향을 검토하기 위하여 대표적 자성물질인 철의 덩어리, 단층 및 사슬 구조에 대해 연구하였다. 이를 위하여 U = 3 eV로 택하여, 총 퍼텐셜 보강 평면파동 에너지 띠 방법을 이용하여 LDA+U 및 GGA+U 근사 하에 전자구조 계산을 수행하였다. 비교를 위하여 LDA 및 GGA를 이용한 계산도 수행하였다. 그 결과 U의 효과를 포함시켰을 때 덩어리 철의 경우 자기모멘트가 $0.3{\mu}_B$ 증가하여 실험값이나 LDA 및 GGA 계산에 비해 과다하게 계산되는 것으로 나타났으나, 단층이나 사슬의 경우는 그렇게 큰 차이를 보이지 않았다. 이로부터 전자구조 계산 시대상 계에 따라 U의 효과를 적절히 고려하여야 함을 알았다.

• Journal of Magnetics
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• 제9권4호
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• pp.116-120
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• 2004

Hexagonal barium-ferrite ($BaFe_{12}O_{19}$, magnetoplumbite structure; BaM) film with perpendicularly c-axis orientation was successfully deposited on (100) silicon substrates with an MgO (111) underlayer by rf diode sputtering and in-situ heating at $920^{\circ}C$. The magnetic and structural properties of 0.27 ${\mu}m$ thick BaM films on MgO (111) underlayers were compared to films of the same thickness deposited onto single-crystal MgO (111) and c-plane ($000{\ell}$) sapphire ($Al_2O_3$) substrates by vibrating sample magnetometry (VSM), x-ray diffractometer (XRD), and atomic force microscopy (AFM). The thickness dependence of MgO (111) underlayers on silicon wafer was found to have a large effect on both magnetic and structural properties of the BaM film. The thickness of 15 nm MgO (111) underlayers produced BaM films with almost identical magnetic and structural properties as the single-crystal substrates; this can be explained by the lower surface roughness for thinner underlayer thicknesses. The magnetization saturation ($M_s$) and the ratio $H_{cII}/H_{c{\bot}}$ for the BaM film with a 15 nm MgO (111) underlayer is 217 emu/cc and 0.24, respectively. This is similar to the results for the BaM films deposited on the single-crystal MgO (111) and sapphire substrates of 197 emu/cc and 0.10, 200 emu/cc and 0.12, respectively. Therefore, the proposed MgO (111) underlayer can be used in many applications to promote c-axis orientation without the cost of expensive substrates.

• 한국자기학회지
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• 제22권6호
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• pp.228-233
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• 2012

한 고체의 자성은 원자가 전자의 양자역학적 상태에 의해 결정되는데, 스핀편극 각도분해 광전자 분광학(SP-ARPES)은 고체안의 전자상태를 조사할 수 있는 가장 강력한 방법으로 어떤 물질의 자성을 이해하는 데에 많은 도움을 준다. 본고에서는 SP-ARPES 방법에 대한 간락한 소개와 이를 통해 얻을 수 있는 물리적 정보에 대해 기술한다.