• Title/Summary/Keyword: electronic and magnetic structure

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An Experimental Study on the Development of Electromagnetic Shielding Concrete Wall for Shielding High-altitude Electromagnetic Pulse (HEMP) (고고도 전자기파(HEMP)차폐를 위한 전자파 차폐 콘크리트 벽체 개발에 관한 실험적 연구)

  • Choi, Hyun-Jun;Kim, Hyung-Chul;Lim, Sang-Woo;Lee, Han-Seung
    • Journal of the Korea Concrete Institute
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    • v.29 no.2
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    • pp.169-177
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    • 2017
  • Rather than causing damage from heat, blast, and radiation of a regular nuclear weapon, recently, it is predicted that North Korea has been inventing high altitude electromagnetic pulse (HEMP) missile in order to incapacitate electronic equipment. HEMP shielding facility is used for military purpose today. Despite the electromagnetic shielding effects from high quality compression plates, problems may include such as the possibility of electromagnetic influx resulting in the welding of the compression plates, and difficulties and high cost of construction. Therefore, in this study, a high electrical conducting material was added to the concrete experimental subject to ensure the shielding effect through electromagnetic waves to for the concrete structure, instead of building a shielding facility separately for the structure. Also, among the experimental subjects, 100 ${\mu}m$ of Iron-Aluminum alloy metal spraying coat was applied to two types with the highest shielding effect, and to two types with the lowest shielding effect. The result of the experiment indicates that experimental subjects added with a high electrical conductivity material did not meet the minimum shielding criteria of MIL-STD-118-125-1 standard, but all the experimental material applied to the metal spraying coating satisfied the minimum shielding criteria. In conclusion, it is considered that 100 µm of Iron-Aluminum alloy metal spraying coat contains high efficiency in the HEMP shielding.

Aspect of the chief of state guard EMP (Electro Magnetic Pulse) protection system for the consideration (국가원수 경호적 측면에서의 EMP(Electro Magnetic Pulse) 방호 시스템에 대한 고찰)

  • Jung, Joo-Sub
    • Korean Security Journal
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    • no.41
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    • pp.37-66
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    • 2014
  • In recent years, with the development of computers and electronics, electronics and communication technology in a growing and each part is dependent on the cross-referencing makes all electronic equipment is obsolete due to direct or indirect damage EMP. Korea and the impending standoff North Korea has a considerable level of technologies related to the EMP, EMP weapons you already have or in a few years, the development of EMP weapons will complete. North Korea launched a long-range missile and conducted a nuclear test on several occasions immediately after, when I saw the high-altitude nuclear blackmail has been strengthening the outright offensive nuclear EMP attacks at any time and practical significance for the EMP will need offensive skills would improve. At this point you can predict the damage situation of Korea's security reality that satisfy the need, more than anything else to build a protective system of the EMP. The scale of the damage that unforeseen but significant military damage and socio-economic damage and fatalities when I looked into the situation which started out as a satellite communications systems and equipment to attack military and security systems and transportation, finance, national emergency system, such as the damage elsewhere. In General, there is no direct casualties reported, but EMP medical devices that rely on lethal damage to people who can show up. In addition, the State power system failure due to a power supply interruption would not have thought the damage would bring State highly dependent on domestic power generation of nuclear plants is a serious nuclear power plant accident in the event of a blackout phenomenon can lead to the plant's internal problems should see a forecast. First of all, a special expert Committee of the EMP, the demand for protective facilities and equipment and conduct an investigation, he takes fits into your budget is under strict criteria by configuring the contractors should be sifting through. He then created the Agency for verification of performance EMP protection after you have verified the performance of maintenance, maintenance, safety and security management, design and construction company organized and systematic process Guard facilities or secret communications equipment and perfect for the EMP, such as protective equipment maneuver system should take.

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DEVELOPMENT OF A LYMAN-α IMAGING SOLAR TELESCOPE FOR THE SATELLITE (인공위성 탑재용 자외선 태양카메라(LIST) 개발)

  • Jang, M.;Oh, H.S.;Rim, C.S.;Park, J.S.;Kim, J.S.;Son, D.;Lee, H.S.;Kim, S.J.;Lee, D.H.;Kim, S.S.;Kim, K.H.
    • Journal of Astronomy and Space Sciences
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    • v.22 no.3
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    • pp.329-352
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    • 2005
  • Long term observations of full-disk Lyman-o irradiance have been made by the instruments on various satellites. In addition, several sounding rockets dating back to the 1950s and up through the present have measured the $Lyman-{\alpha}$ irradiance. Previous full disk $Lyman-{\alpha}$ images of the sun have been very interesting and useful scientifically, but have been only five-minute 'snapshots' obtained on sounding rocket flights. All of these observations to date have been snapshots, with no time resolution to observe changes in the chromospheric structure as a result of the evolving magnetic field, and its effect on the Lyman-o intensity. The $Lyman-{\alpha}$ Imaging Solar Telescope(LIST) can provide a unique opportunity for the study of the sun in the $Lyman-{\alpha}$ region with the high time and spatial resolution for the first time. Up to the 2nd year development, the preliminary design of the optics, mechanical structure and electronics system has been completed. Also the mechanical structure analysis, thermal analysis were performed and the material for the structure was chosen as a result of these analyses. And the test plan and the verification matrix were decided. The operation systems, technical and scientific operation, were studied and finally decided. Those are the technical operation, mechanical working modes for the observation and safety, the scientific operation and the process of the acquired data. The basic techniques acquired through the development of satellite based solar telescope are essential for the construction of space environment forecast system in the future. The techniques which we developed through this study, like mechanical, optical and data processing techniques, could be applied extensively not only to the process of the future production of flight models of this kind, but also to the related industries. Also, we can utilize the scientific achievements which are obtained throughout the project And these can be utilized to build a high resolution photometric detectors for military and commercial purposes. It is also believed that we will be able to apply several acquired techniques for the development of the Korean satellite projects in the future.

Magnetism of Fe Monolayers on Nonmagnetic fcc Transition Metal (Cu, Rh, Pd, and Ag) (001) Surfaces (면심입방 금속(Cu, Rh, Pd, Ag) (001) 표면 위의 철 단층의 자성)

  • Yun, Won-Seok;Cha, Gi-Beom;Rho, Tae-Hwan;Han, Dong-Ho;Hong, Soon-Cheol
    • Journal of the Korean Magnetics Society
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    • v.19 no.5
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    • pp.165-170
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    • 2009
  • It is well-known that a meta-stable fcc bulk Fe has an antiferromagnetic (AFM) ground state and could be synthesized by growing Fe on a proper fcc metal substrate. In this study magnetism of Fe monolayers on nonmagnetic fcc transition metal (Cu, Rh, Pd, and Ag) (001) surfaces has been investigated using the all-electron full-potential linearized augmented plane wave method. The Fe monolayers on Rh(001) and Pd(001) surfaces were calculated to be stabilized in an AFM state, whereas the Fe monlayers on Cu(001) and Ag(001) surfaces are stabilized in a ferromagnetic (FM) state. Noting that Cu and Ag have the smallest and largest lattice constants and the fcc bulk Fe with a larger lattice constant is getting stabilized in a ferromagnetic state, it is unexpectable and interesting. The calculated magnetic moments of the Fe atoms on Cu, Rh, Pd, and Ag(001) surfaces are 2.811, 2.945, 2.987, and 2.990 $_{{\mu}B}$ in FM states and 2.624, 2.879, 2.922, and 3.001 $_{{\mu}B}$ in AFM states.

Synthesis and Characterization of Homobinuclear Complexes of UO2(VI), ZrO(IV) and Th(IV) ions with 3-Benzylidine/Furfurylidine/(Pyridyl/Thienyl-2'-methylene) imino-5-p-sulphonamido phenyl azo-2-thiohydantoins (3-Benzylidine/Furfurylidine/(Pyridyl/Thienyl-2'-methylene) imino-5-p-sulphonamido phenyl azo-2-thiohydantoins와 UO2(VI), ZrO(IV) 및 Th(IV) 이온의 동종이핵 착물에 대한 합성 및 특성)

  • Dash, D.C.;Mahapatra, A.;Naik, P.;Mohapatra, R.K.;Naik, S.K.
    • Journal of the Korean Chemical Society
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    • v.55 no.3
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    • pp.412-417
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    • 2011
  • A series of homobinuclear complexes of the type [$M_2L(NO_3)_n(H_2O)_m$] where M=$UO_2$(VI), ZrO(IV), Th(IV); L=3-benzylidine-imino-5-p-sulphonamido phenyl azo-2-thiohyatoin(bispt), 3-furfurylidine-imino-5-p-sulphonamido phenyl azo-2-thiohydantoin(fispt),3-pyridyl-2'-methylene-imino-5-p-sulphonamido phenyl azo-2-thiohydantoin(pmispt) and 3-thienyl-2'-methylene-imino-5-p-sulphoanamido phenyl azo-2-thiohydantoin(tmispt); n=8 for Th(IV) and 4 for others, m=4 for bispt and 3 for others have been synthesized and characterized on the basis of elemental analysis, thermal analysis, molar conductance, magnetic moment and spectroscopic data (IR, electronic and $^1H$-NMR). In the light of this information, the ligands can be visualized as tetradentate co-ordinating through azomethine nitrogen, carbonyl oxygen to one metal centre where as azo nitrogen and thioimido nitrogen to the other metal centre yielding homo binuclear complexes of the above composition. The fungi toxicity of the ligands & their zirconyl complexes against some fungal pathogen has been studied.

Synthesis and Characterization of UO2(VI), Th(IV), ZrO(IV) and VO(IV) Complexes with Schiff-Base Octaazamacrocyclic Ligands (Schiff-염기인 옥타아자-거대고리 리간드의 UO2(VI), Th(IV), ZrO(IV) 및 VO(IV) 착물 합성 및 특성)

  • Mohapatra, Ranjan Kumar;Dash, Dhruba Charan
    • Journal of the Korean Chemical Society
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    • v.54 no.4
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    • pp.395-401
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    • 2010
  • A series of macrocyclic complexes of the type [M(L/L')$(NO_3)_n$].$mH_2O$ and [VO(L/L')($SO_4$)].$2H_2O$, where L/L' is a Schiff base "3,4,10,11-tetraphenyl/tetramethyl-1,2,5,6,8,9,12,13-octaaza cyclotetradeca-2,4,9,11-tetraene-7,14-dithione" derived from thiocarbohydrazide (TCH), benzilmonohydrazone (BMH)/diacetylmonohydrazone (DMH) and carbon disulphide, M = $UO_2$ (VI), Th(IV) and ZrO(IV), n = 2, 4, m = 2, 3, have been synthesized via metal ion template methods. The complexes are characterized on the basis of elemental analysis, thermal analysis, molar conductivity, magnetic moment, electronic, infrared and $^1H$-NMR spectral studies. The ESR and cyclic voltammetry studies of the vanadyl complexes have been carried out. The results indicate that the VO(IV) ion is penta-coordinated yielding paramagnetic complexes; $UO_2$(VI) and ZrO(IV) ions are hexacoordinated where as Th(IV) ion is octa-coordinated yielding diamagnetic complexes of above composition.

Reduction of Chattering Error of Reed Switch Sensor for Remote Measurement of Water Flow Meter (리드 스위치 센서를 이용한 원격 검침용 상수도 계량기에서 채터링 오차 감소 방안 연구)

  • Ayurzana, Odgerel;Kim, Hie-Sik
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.44 no.4 s.316
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    • pp.42-47
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    • 2007
  • To reduce the chattering errors of reed switch sensors in the automatic remote measurement of water meter a reed switch sensor was analyzed and improved. The operation of reed switch sensors can be described as a mechanical contact switch by approximation of permanent magnet piece to generate an electrical pulse. The reed switch sensors are used mostly in measurement application to detect the rotational or translational displacement. To apply for water flow measurement devices, the reed switch sensors should keep high reliability. They are applied for the electronic digital type of water flow meters. The reed switch sensor is just mounted simply on the conventional mechanical type flow meter. A small magnet is attached on a pointer of the water meter counter rotor. Inside the reed sensor two steel leaf springs make mechanical contact and apart repeatedly as rotation of flow meter counter. The counting electrical contact pulses can be converted as the water flow amount. The MCU sends the digital flow rate data to the server using the wireless communication network. But the digital data is occurred difference or won by chattering noise. The reed switch sensor contains chattering error by it self at the force equivalent position. The vibrations such as passing vehicle near to the switch sensor installed location causes chattering. In order to reduce chattering error, most system uses just software methods, for example using filter algorithm and also statistical calibration methods. The chattering errors were reduced by changing leaf spring structure using mechanical characteristics.

New Approaches for Overcoming Current Issues of Plasma Sputtering Process During Organic-electronics Device Fabrication: Plasma Damage Free and Room Temperature Process for High Quality Metal Oxide Thin Film

  • Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.100-101
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    • 2012
  • The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

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