• Journal of the Korea Institute of Military Science and Technology
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• v.1 no.1
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.149-152
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• 2012

$Cu(In,Ga)Se_2$ (CIGS) is one of the most promising photovoltaic materials because of large conversion efficiency which has been achieved with an optimum Ga/(In+Ga) composition in $CuIn_{1-x}Ga_xSe_2$ (X~0.3). The Ga/(In+Ga) content is important to determine band gap, solar cell performances and carrier behaviors at grain boundary (GB). Effects of Ga/(In+Ga) content on physical properties of the CIGS layers have been extensively studied. In previous research, it is reported that GB is not recombination center of CIGS thin-film solar cells. However, GB recombination and electron-hole pair behavior studies are still lacking, especially influence of with different X on CIGS thin-films. We obtained the GB surface potential, local current and I-V characteristic of different X (00.7 while X~0.3 showed higher potential than 100 mV on GBs. Higher potential on GBs appears positive band bending. It can decrease recombination loss because of carrier separation. Therefore, we suggest recombination and electron-hole behaviors at GBs depending on composition of X.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.5
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• pp.800-805
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• 2017

The accelerated thermal ageing of CSPE (chlorosulfonated polyethylene) was carried out for 16.82, 50.45, and 84.09 days at $110^{\circ}C$, equivalent to 20, 60, and 100 years of ageing at $50^{\circ}C$ in nuclear power plants, respectively. As the accelerated thermally aged years increase, the insulation resistance and resistivity of the CSPE decrease, and the capacitance, relative permittivity and dissipation factor of those increase at the measured frequency, respectively. As the accelerated thermally aged years and the measured frequency increase, the phase degree of response voltage vs excitation voltage of the CSPE increase but the phase degree of response current vs excitation voltage decrease, respectively. As the accelerated thermally aged years increase, the apparent density, glass transition temperature and the melting temperature of the CSPE increase but the percent elongation and % crystallinity decrease, respectively. The differential temperatures of those are $0.013-0.037^{\circ}C$ and, $0.034-0.061^{\circ}C$ after the AC and DC voltages are applied to CSPE-0y and CSPE-20y, respectively; the differential temperatures of those are $0.011-0.038^{\circ}C$ and $0.002-0.028^{\circ}C$ after the AC and DC voltages are applied to CSPE-60y and CSPE-100y, respectively. The variations in temperature for the AC voltage are higher than those for the DC voltage when an AC voltage is applied to CSPE. It is found that the dielectric loss owing to the dissipation factor($tan{\delta}$) is related to the electric dipole conduction current. It is ascertained that the ionic (electron or hole) leakage current is increased by the partial separation of the branch chain of CSPE polymer as a result of thermal stress due to accelerated thermal ageing.

• Journal of Korean Society on Water Environment
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• v.32 no.1
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• pp.46-51
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• 2016

In this study, we synthesized a combination of graphene oxide (GO) and titanium dioxide (TiO₂) and confirm that GO can be used for CO₂ photoreduction. TiO₂ exhibited highly efficient combination with other conventional electric charges generated by these paration phenomenon for suppression of hole-electron recombination. This improved the efficiency of CO₂ photoreduction. The synthetic form of GO-TiO₂ used in this study was agraphene sheet surrounded by TiO₂ powder. Efficiency and stability were enhanced by combination of GO and TiO₂. In a CO₂ photoreduction experiment, the highest CO conversion rate was 0.652 μmol/g·h in GO10-TiO₂ (2.3-fold that of pure TiO₂) and the highest CH₄ production rate was 0.037 μmol/g·h in GO0.1-TiO₂ (2.4-fold that of pure TiO₂). GO enhances photocatalytic efficiency by functioning as a support and absorbent, and enabling charge separation. With increasing GO concentration, the CH₄ level decreases to~45% due to decreased transfer of electrons. In this study, TiO₂ together with GO yielded a different result than the normal doping effect and selective CO₂ photoreduction.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.316-316
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• 2010

Thin films spin-coated from solvent solutions are characterized by solution parameters and spin-coating process. In this study, performance characteristics of polymer solar cells were investigated with changing solution parameters such as solvent and additives. The phase-separation between polymer and fullerene is needed to make the percolation pathway for better transportation of hole and electron in polymer solar cells. For this reason, cooperative effects of solvent mixtures adding additives with distinct solubility have been studied recently. In this study, chlorobezene, 1, 2-dichlorbenzene, and chloroform were used as solvent. 1, 8-diiodoctaned and 1, 8-octanedithiol were used as additives and were added into poly(3-hexylthiophene-2, 5-diyl)/[6, 6]-phenyl C61 butyric acid methyl ester (P3HT/PCBM) blends. Pre-patterned ITO glass was cleaned using ultrasonication in mixed solvent with ethyl alcohol, isopropyl alcohol and acetone. PEDOT:PSS was spin-coated on to the ITO substrate at 3000rpm and was baked at $120^{\circ}C$ for 10min on the hotplate. The prepared solution was spin-coated at 1000rpm and the spin-coated thin film was dried in the Petri dishes. Al electrode was deposited on the thin film by thermal evaporation. The devices were annealed at $120^{\circ}C$ for 30min. By adding 2.5 volume percent of additives into the chlorobenzene from that bulk heterojunction films consisting of P3HT/PCBM, the power efficiency (AM 1.5G conditions) was increased from 2.16% to 2.69% and 3.12% respectively. We have investigated the effect of additives in P3HT/PCBM blends and the film characteristics and the film characteristics including J-V characteristics, absorption, photoluminescence, X-ray diffraction, and atomic force microscopy to mainly depict the morphology control by doping additives.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.145-145
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• 2011

Light-emitting diodes (LEDs) based on III-nitrides compound semiconductors have achieved a high performance device available for display and illumination sector. However, the conventional c-plane oriented LED structures are still showing several problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. The QCSE results in spatial separation of electron and hole wavefunctions in quantum wells, thereby decreasing the internal quantum efficiency and red-shifting the emission wavelength. Due to demands for improvement of device performance, nonpolar structure has been attracting attentions, since the quantum wells grown on nonpolar templates are free from the QCSE. However, current device performance for nonpolar LEDs is still lower than those for conventional LEDs. In this study, we discuss the potential possibilities of nonpolar LEDs for commercialization. In this study, we characterized current-light output power relation of the a-plane InGaN/GaN LEDs structures with the variation of quantum well structures. On-wafer electroluminescence measurements were performed with short pulse (10 us) and low duty factor (1 %) conditions applied for eliminating thermal effects. The well and barrier widths, and indium compositions in quantum well structures were changed to analyze the efficiency droop phenomenon.

• Applied Microscopy
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• v.46 no.1
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• pp.37-44
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• 2016

In this study $TiO_2$/reduced graphene oxide ($TiO_2/rGO$) bipyramid with tunable nanostructure was fabricated by two-step solvothermal process and subsequent heat-treatment in air. The as-synthesized anatase $TiO_2$ nanocrystals possessed morphological bipyramid with exposed dominantly by (101) facets. Polyethylenimine was utilized during the combination of $TiO_2$ and graphene oxide (GO) to tune the surface charge, hindering the restack of graphene during solvothermal process and resulting in 1 to 5 layers of rGO wrapped on $TiO_2$ surface. After a further calcination, a portion of carbon quantum dots (CQDs) with a diameter about 2 nm were produced owing to the oxidizing and cutting of rGO on $TiO_2$. The as-prepared $TiO_2/rGO$ hybrid showed a highly photocatalytic activity, which is about 3.2 and 7.7 times enhancement for photodegradation of methyl orange with compared to pure $TiO_2$ and P25, respectively. We assume that the improvement of photocatalysis is attributed to the chemical bonding between rGO/CQDs and $TiO_2$ that accelerates photogenerated electron-hole pair separation, as well as enhances light harvest.

• Journal of Microbiology and Biotechnology
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• v.28 no.6
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• pp.957-967
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• 2018

A novel $g-C_3N_4$/ZnO/stellerite (CNZOS) hybrid photocatalyst, which was synthesized by coupled hydro thermal-thermal polymerization processing, was applied as an efficient visible-light-driven photocatalyst against Staphylococcus aureus. The optimum synthesized hybrid photocatalyst showed a sandwich structure morphology with layered $g-C_3N_4$ (doping amount: 40 wt%) deposited onto micron-sized ZnO/stellerite particles (ZnO average diameter: ~18 nm). It had a narrowing band gap (2.48 eV) and enlarged specific surface area ($23.05m^2/g$). The semiconductor heterojunction effect from ZnO to $g-C_3N_4$ leads to intensive absorption of the visible region and rapid separation of the photogenerated electron-hole pairs. In this study, CNZOS showed better photocatalytic disinfection efficiency than $g-C_3N_4/ZnO$ powders. The disinfection mechanism was systematically investigated by scavenger-quenching methods, indicating the important role of $H_2O_2$ in both systems. Furthermore, $h^+$ was demonstrated as another important radical in oxidative inactivation of the CNZOS system. In respect of the great disinfection efficiency and practicability, the CNZOS heterojunction photocatalyst may offer many disinfection applications.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.5
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• pp.819-824
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• 2016

The accelerated thermal aging of CSPE (chlorosulfonated polyethylene) was carried out for 33.64 and 67.27 days at 110[$^{\circ}C$], equivalent to 40 and 80 years of aging at 50[$^{\circ}C$], respectively. These samples were referred to as CSPE-0y, CSPE-40y and CSPE-80y, respectively. As the accelerated thermally aged years of the CSPE increase, the insulation resistance[$\Omega$] at 20[Hz], 500[Hz], and 2[KHz], and the percent elongation [%EL] of the CSPE decrease. However, the dissipation factor($tan{\delta}$) at 20[Hz], 500[Hz], and 2[KHz], the apparent density[$g/cm^3$], the glass transition temperature and the melting temperature of the CSPE were increased. The period of time that the voltage has to be applied until electric breakdown of the CSPE-0y is longer than that of the CSPE-40y, and the CSPE-80y, but the dielectric strength of the CSPE-80y is lower than that of the CSPE-0y and the CSPE-40y. The differential temperatures after the AC and DC voltages are applied to CSPE-0y, CSPE-40y and CSPE-80y are 0.026~0.028[$^{\circ}C$], 0.030~0.042[$^{\circ}C$], 0.018~0.045[$^{\circ}C$], respectively. The variations of temperature for the AC voltage are higher than those for the DC voltage when an AC voltage is applied to CSPE-0y, CSPE-40y and CSPE-80y. It is found that the dielectric loss owing to the dissipation factor[$tan{\delta}$] is related to the electric dipole conduction current. It is ascertained that the ionic (electron or hole) leakage current is increased by the separation of the branch chain of CSPE polymer from the main chain of the polyethylene as a result of thermal stress due to accelerated thermal aging as well as by conducting ions such as $Na^+$, $Cl^-$, $Mg^{2+}$, $SO_4^{2-}$, $Ca^{2+}$ and $K^+$ after seawater soaking.