• Korean Journal of Materials Research
• /
• v.25 no.3
• /
• pp.125-131
• /
• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• Korean Journal of Materials Research
• /
• v.29 no.5
• /
• pp.328-335
• /
• 2019

Nb-doped $TiO_2$(NTO) coated NiCrAl alloy foam for hydrogen production is prepared using ultrasonic spray pyrolysis deposition(USPD) method. To optimize the size and distribution of NTO particles based on good physical and chemical stability, we synthesize particles by adjusting the weight ratio of the Nb precursor solution(5 wt%, 10 wt% and 15 wt%). The morphological, chemical bonding, and structural properties of the NTO coated NiCrAl alloy foam are investigated by X-ray diffraction(XRD), X-ray photo-electron spectroscopy(XPS), and Field-Emission Scanning Electron Microscopy(FESEM). As a result, the samples of controlled Nb weight ratio exhibit a common diffraction pattern at ${\sim}25.3^{\circ}$, corresponding to the(101) plane, and have chemical bonding(O-Nb=O) at 534 eV. The NTO particles with the optimum weight ratio of N (10 wt%) show a uniform distribution with a size of ~18.2-21.0 nm. In addition, they exhibit the highest corrosion resistance even in the electrochemical stability estimation. As a result, the introduction of NTO coated NiCrAl alloy foam by USPD improves the chemical stability of the NiCrAl alloy foam by protecting the direct electrochemical reaction between the foam and the electrolyte. Thus, the optimized NTO coating can be proposed for excellent protection of NiCrAl alloy foam for hydrocarbon-based steam methane reforming(SMR).

• Korean Journal of Materials Research
• /
• v.2 no.5
• /
• pp.360-365
• /
• 1992

Ga-doped polycrystalline ZnO films on glass substrates were prepared by sputtering the targets, which had been prepared by sintering discs consisting of ZnO powder and various amounts of G$a_2O_3$, to investigate the effects of gallium doping and sputtering conditions on electrical properties. Optimizing the RF power density, argon gas pressure and gallium content, transparent Ga-doped ZnO films with resistivity less than 1$0^{-3}$ohm-cm are obtained. Electron concentration of undoped and Ga-doped ZnO films are order of $10^{18}$, $10^{21}$/c$m^2$respectively. After heat treatment in air and $N_2atmosphere, $ the resistivity of Ga-doped ZnO films increases by about two orders of magnitude. The optical transmission is above 80% in the visible range and the optical band widens as the Ga content increases.

• Advances in materials Research
• /
• v.12 no.3
• /
• pp.179-192
• /
• 2023

We have studied the structural and optical properties of the non-doped and Co 0.08 at.%, Co 0.02 at.%, and Co 0.11 at.% doped ZnO nanorods (NRs) synthesized using the simple low-temperature chemical bath deposition (CBD) method at 95℃ for 2 hours. The scanning electron microscope (SEM) images confirmed the morphology of the ZnO NRs are affected by Co incorporation. As observed, the Co 0.08 at.% doped ZnO NRs have a larger dimension with an average diameter of 153.4 nm. According to the International Centre for Diffraction Data (ICDD) number #00-036-1451, the x-ray diffraction (XRD) pattern of non-doped and Co-doped ZnO NRs with the preferred orientation of ZnO NRs in the (002) plane possess polycrystalline hexagonal wurtzite structure with the space group P63mc. Optical absorbance indicates the Co 0.08 at.% doped ZnO NRs have stronger and blueshift bandgap energy (3.104 ev). The room temperature photoluminescence (PL) spectra of ZnO NRs exhibited excitonicrelates ultraviolet (UV) and defect-related green band (GB) emissions. By calculating the UV/GB intensity, the Co 0.08 at.% is the proper atomic percentage to have fewer intrinsic defects. We predict that Co-doped ZnO NRs induce a blueshift of near band edge (NBE) emission due to the Burstein-Moss effect. Meanwhile, the redshift of NBE emission is attributed to the modification of the lattice dimensions and exchange energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.3
• /
• pp.147-151
• /
• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• Journal of Korean Vacuum Science & Technology
• /
• v.6 no.2
• /
• pp.101-104
• /
• 2002

Er doped SiOx films have been synthesized by ion beam assisted deposition (IBAD). The morphology and microstructure of films and their annealing behaviors have been examined by using scanning electron microscopy and x-ray diffraction. The composition and properties of films have been systematically investigated.

• Journal of the Korean Ceramic Society
• /
• v.29 no.4
• /
• pp.319-327
• /
• 1992

Sb-doped SnO2 films were formed on Corning glass 7059 substrate by chemical vapor deposition using simulataneous hydrolysis of SnCl4 and SbCl5. Fairly good transparent conducting film with a low resistivity of ~6$\times$10-4{{{{ OMEGA }}cm and high average optical transparency above ~85% in the range of visible light was obtained at the deposition condition of 50$0^{\circ}C$ and input-gas ratio, [Psbcl5/Psncl4] of 0.05. Film conductivity was improved without loosing optical transparency at light doping of Sb and found to be due to the increase of electron concentration. However, high doping of Sb into SnO2 film largely deteriorated conductivity, optical transparency and crystallinity of the film.

• Carbon letters
• /
• v.19
• /
• pp.40-46
• /
• 2016

Nitrogen-atom doped graphene oxide was considered to prevent the dissolution of polysulfide and to guarantee the enhanced redox reaction of sulfur for good cycle performance of lithium sulfur cells. In this study, we used urea as a nitrogen source due to its low cost and easy preparation. To find the optimum urea content, we tested three different ratios of urea to graphene oxide. The morphology of the composites was examined by field emission scanning electron microscope. Functional groups and bonding characterization were measured by X-ray photoelectron spectroscopy. Electrochemical properties were characterized by cyclic voltammetry in an organic electrolyte solution. Compared with thermally reduced graphene/sulfur (S) composite, nitrogen-doped graphene/S composites showed higher electroactivity and more stable capacity retention.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.191-191
• /
• 2003

가시광선영역에서 높은 광학적 투명도를 갖는 n-type 반도체인 ZnO 박막은 넓은 범위에서 응용되고 있다. 현재 ZnO 박막의 특성 향상을 위하여 여러 원소(Al, Ga)의 도핑을 시도하고 있다. 특히 Al-doped ZnO 박막은 sol-gel dip coating에 의해서도 높은 전기전도도와 투과율로 활발히 연구되고 있다 본 논문에서는 여러 도핑농도를 갖는 Al-doped ZnO 박막이 sol-gel dip coating법에 의해 준비되었다. Al-doped ZnO 박막은 zinc acetate [Zn($CH_3$COO$_2$)ㆍ2$H_2O$] powder 와 여러 도핑농도를 갖는 aluminum nitrate (Al(NO$_3$)$_3$ㆍ9$H_2O$) powder를 알코올에 용해하여 $H_2O$, Ethylene glycol, Ethylene diamine 등을 첨가하여 제조하였다 XRD와 SEM (Scanning electron microscope)이 막의 상형성 분석을 위해 이용되었으며, 가시광선 영역 투과율(UV/VIS spectrophotometer)과 표면전기저항(four point probe)이 주요 특성으로 분석되었다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1050-1053
• /
• 2006

We fabricated white organic light emitting diodes consisting of three emitting layers of red-emitting DCM2 doped ${\alpha}-NPD$, blue-emitting DPVBi and green-emitting C545T doped Alq3. By optimizing the thickness of the hole-transport layer of ${\alpha}-NPD$ and the electron-transport layer of Alq3, efficient white OLEDs were obtained with a luminous efficiency of 4.40lm/W at luminance of $1000cd/m^2$, and a max-imum luminance of $51,939cd/m^2$