• Title/Summary/Keyword: electron transport properties

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Kinetic Considerations on the Olivine Cathodes

  • Yamada Atsuo;Yonemura Masao;Takei Yuki;Sonoyama Noriyuki;Kanno Ryoji
    • 한국전기화학회:학술대회논문집
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    • 2003.11a
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    • pp.141-151
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    • 2003
  • The electrochemical activity of the olivine type $LiMPO_4$ (M=transition metals) cathodes strongly depends on various factors, e.g., the transition metal element M, perturbative doping of the supervalent cations into Li site, composite formation with conductive additives, state of charge/discharge, and particle size and its geometries, etc. This is, therefore, an important issue of interdisciplinary between electrochemistry and solid state science towards practical applications. In order to shed light on this interesting but complicated issue with the transport properties and crystallographic aspects, systematic discussion will be made with the review of our recent publications; (1) first principle derivation of the electronic structures, (2) crystallographic mapping of the selected solid solutions, (3) quantitative elucidation of the electron-lattice interaction, (4) spectroscopic detection of the local environment with Mossbauer and EXAFS, (5) synthetic optimization of the electrode composite, and (6) electrochemical evaluation of the reaction kinetics, particularly on M = Fe, Mn.

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Low-Temperature Solution Process of Al-Doped ZnO Nanoflakes for Flexible Perovskite Solar Cells

  • Nam, SeongSik;Vu, Trung Kien;Le, Duc Thang;Oh, Ilwhan
    • Journal of Electrochemical Science and Technology
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    • v.9 no.2
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    • pp.118-125
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    • 2018
  • Herein we report on the selective synthesis and direct growth of nanostructures using an aqueous chemical growth route. Specifically, Al-doped ZnO (AZO) nanoflakes (NFs) are vertically grown on indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) sheets at low temperature and ambient environment. The morphological, optical, and electrical properties of the NFs are investigated as a function of the Al content. Furthermore, these AZO-NFs are integrated into perovskite solar devices as the electron transport layer (ETL) and the fabricated devices are tested for photovoltaic performance. It was determined that the doping of AZO-NFs significantly increases the performance metrics of the solar cells, mainly by increasing the short-circuit current of the devices. The observed enhancement is primarily attributed to the improved conductivity of the doped AZO-NF, which facilitates charge separation and reduces recombination. Further, our flexible solar cells fabricated through this low temperature process demonstrate an acceptable reproducibility and stability when exposed to a mechanical bending test.

Influence of Electrode and Thickness of Organic Layer to the Emission Spectra in Microcavity Organic Light Emitting Diodes (마이크로캐비티 OLED의 전극과 유기물층 두께가 발광 스펙트럼에 미치는 영향)

  • Kim, Chang-Kyo;Han, Ga-Ram;Kim, Il-Yeong;Hong, Chin-Soo
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.11
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    • pp.1183-1189
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    • 2012
  • Organic light-emitting diodes (OLEDs) using microcavity effect have attracted great attention because they can reduce the width of emission spectra from organic materials, and enhance brightness from the same material. We demonstrate the simulation results of the radiation properties from top-emitting organic light-emitting diodes (TE-OLEDs) with microcavity structures based on the general electromagnetic theory. Organic materials such as N,N'-di (naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB) as a hole transport layer and tris (8-hydroxyquinoline) ($Alq_3$) as emitting and electron transporting layer are used to form the OLEDs. The organic materials were sandwiched between anode such as Ni or Au and cathode such as Al, Ag, or Al:Ag. The devices were characterized with electroluminescence phenomenon. We confirmed that the simulation results are consistent with experimental results.

One-dimensional Bi-Te core/shell structure grown by a stress-induced method for the enhanced thermoelectric properties

  • Kang, Joo-Hoon;Ham, Jin-Hee;Lee, Woo-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.47-47
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    • 2009
  • The formation of variable one-dimensional structures including core/shell structure is of particular significance with respect to potential applications for thermoelectric devices with the enhanced figure of merit ($ZT=S2{\sigma}T/{\kappa}$). We report the fabrication of Bi-Te core/shell nanowire based on a novel stress induced method. Fig. 1 schematically shows the nanowire fabrication process. Bi nanowires are grown on the Si substrate by the stress-induced method, and then Te is evaporated on the Bi nanowires. Fig. 2 is a transmission electron microscopy image clearly showing a core/shell structure for which effective phonon scattering and quantum confinement effect are expected. Electrical conductivity of the core/shell nanowire was measured at the temperatures from 4K to 300K, respectively. Our results demonstrate that Bi-Te core/shell nanowire can be grown successfully by the stress-induced method. Based on the result of electrical transport measurement and characteristic morphology of rough surface, Seebeck coefficient and thermal conductivity of Bi-Te core/shell nanowires are presented.

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Optical properties of undoped and $Zn_4SnSe_6$ and $Zn_4SnSe_6:Co^{2+}$ Single Crystals ($Zn_4SnSe_6$$Zn_4SnSe_6:Co^{2+}$단결정의 광학적 특성연구)

  • Kim, Nam-Oh;Kim, Hyung-Gon;Kim, Byung-Chul;Kim, Myeong-Soo;Oh, Guem-Kon
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1599-1602
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    • 2002
  • $Zn_4SnSe_6$ and $Zn_4SnSe_6:Co^{2+}$ single crystals were by the chemical transport reaction method. They crystallized in the monoclinic structure. The direct energy band gaps of the $Zn_4SnSe_6$ and $Zn_4SnSe_6:Co^{2+}$ single crystals at 289K were found to be 2.146eV and 2.042eV. Optical absorption due to impurity in the $Zn_4SnSe_6:Co^{2+}$ single crystal was observed and described as originating from the electron transition between energy leveles of $Co^{2+}$ sited at $T_d$ symmetry point.

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Development of polypropylene-clay nanocomposite with supercritical $CO_2$ assisted twin screw extrusion

  • Hwang, Tae-Yong;Lee, Sang-Myung;Ahn, Young-Joon;Lee, Jae-Wook
    • Korea-Australia Rheology Journal
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    • v.20 no.4
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    • pp.235-243
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    • 2008
  • The aim of this study is to explore the possibility of incorporating supercritical carbon dioxide ($scCO_2$) into twin screw extrusion process for the production of polypropylene-clay nanocomposite (PPCN). The $CO_2$ is used as a reversible plasticizer which is expected to rapidly transport polymeric chains into the galleries of clay layers in its supercritical condition inside the extruder barrel and to expand the gallery spacings in its sub-critical state upon emerging from die. The structure and properties of the resulting PPCNs are characterized using wide-angle X-ray diffraction (WAXD), transmission electron microscopy (TEM), rheometry, thermogravimetry and mechanical testing. In the processing of the PPCNs with $scCO_2$, optimum $scCO_2$ concentration and screw speed which maximized the degree of intercalation of clay layers were observed. The WAXD result reveals that the PP/PP-g-MA/clay system treated with $scCO_2$ has more exfoliated structure than that without $scCO_2$ treatment, which is supported by TEM result. $scCO_2$ processing enhanced the thermal stability of PPCN hybrids. From the measurement of linear viscoelastic property, a solid-like behavior at low frequency was observed for the PPCNs with high concentration of PP-g-MA. The use of $scCO_2$ generally increased Young's modulus and tensile strength of PPCN hybrids.

Heteroepitaxial Structure of ZnO Films Deposited on Graphene, $SiO_2$ and Si Substrates

  • Pak, Sang-Woo;Cho, Seong-Gook;Kim, Eun-Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.309-309
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    • 2012
  • Heteroepitaxial growth remains as one of the continuously growing interests, because the heterogeneous crystallization on different substrates is a common feature in the fabrication processes of many semiconductor materials and devices, such as molecular beam epitaxy, pulsed laser deposition, sputtering, chemical bath deposition, chemical vapor deposition, hydrothermal synthesis, vapor phase transport and so on [1,2]. By using the R.F. sputtering system, ZnO thin films were deposited on graphene 4 and 6 mono layers, which is grown on 400 nm and 600 nm $SiO_2$ substrates, respectively. The ZnO thin layer was deposited at various temperatures by using a ZnO target. In this experimental, the working power and pressure were $3{\times}10^{-3}$ Torr and 50 W, respectively. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen and argon gas flows were controlled around 5 and 10 sccm by using a mass flow controller system, respectively. The structural properties of the samples were analyzed by XRD measurement. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system. The surface morphologies were observed using field emission scanning electron microscope (FE-SEM).

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Transport Properties of Polypyrrole Films Doped with Sulphonic Acids

  • Basavaraja, C.;Kim, Na-Ri;Jo, Eun-Ae;Pierson, R.;Huh, Do-Sung;Venkataraman, A.
    • Bulletin of the Korean Chemical Society
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    • v.30 no.11
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    • pp.2701-2706
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    • 2009
  • The polymer blends containing polypyrrole (PPy) and the sulphonic acids such as β-naphthalene sulfonic acid (NSA), camphor sulfonic acid (CSA), and dodecylbenzenesulfonic acid (DBSA) were synthesized by in situ deposition technique in an aqueous media using ammonium per sulfate (APS) as an initiator. The obtained films were characterized by scanning electron microscopy (SEM), and the thermal behavior of these polymer blends was analyzed by thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). The temperature-dependent (DC) conductivity of the obtained films shows a semiconducting behavior with a negative temperature coefficient of resistivity (TCR). The conductivity data were also analyzed through Mott’s equation, which provides the variable range hopping model in three dimensions. The parameters such as density of states at the Fermi energy, hopping energy, and hopping distance were calculated for PPy, PPy-NSA, PPy-CSA, and PPy-DBSA films, and the data were compared.

Composition and interface quality control of AlGaN/GaN heterostructure and their 2DEG transport properties

  • Kee, Bong;Kim, H.J.;Na, H.S.;Kwon, S.Y.;Lim, S.K.;Yoon, Eui-Joon
    • Journal of Korean Vacuum Science & Technology
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    • v.4 no.3
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    • pp.81-85
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    • 2000
  • The effects of $NH_3$ flow rate and reactor pressure on Al composition and the interface of AlGaN/GaN heterostructure were studied. Equilibrium partial pressure of Ga and Al over AiGaN alloy was calculated as a function of growth pressure, $NH_3$flow rate and temperature. It was found equilbrium vapor pressure of Al is significantly lower than that of Ga, thus, the alloy composition mainly controlled by Ga partial pressure. We believe that more decomposition of Ga occur at lower $NH_3$ flow rate and higher growth pressure leads to preferred Al incorporation into AlGaN. The alloy composition gradient became larger at AlGaN/GaN heterointerface at higher reactor pressures, higher Al composition and low $NH_3$ flow rate. This composition gradient lowered sheet carrier concentration and electron mobility as well. We obtained an AlGaN/GaN heterostructure with sheet carrier density of ${\sim}2{\times}10^{13}cm^{-2}$ and mobility of 1250 and 5000 $cm^2$/Vs at 300 K and 100 K, respectively.

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Structural and optical properties of ZnO nanostructures with various distance condition by vapor phase transport (기상이동법으로 간격 변화에 따라 성장한 산화아연 나노구조의 구조적, 광학적 특성)

  • Kim, So-A-Ram;Kim, Min-Su;Nam, Gi-Ung;Park, Hyeong-Gil;Yun, Hyeon-Sik;Im, Jae-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.243-244
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    • 2012
  • 산화아연 나노구조를 금을 금속촉매로 사용하여 실리콘 기판위에 기상이동법으로 성장하였다. 성장할 때 소스(source)와 기판 사이의 거리는 5에서 50 mm로 변화를 주며 아르곤과 산소 분위기에서 $900^{\circ}C$로 성장하였다. 산화아연 나노구조의 구조적 및 광학적 특성을 조사하기 위해 field-emission scanning electron microscopy, X-ray diffraction (XRD), 그리고 photoluminescence (PL)를 이용하였다. 산화아연 나노구조는 나노선과 나노입자의 형태로 성장하였다. 산화아연 나노구조의 광학적 특성은 소스와 기판사이의 거리가 가까울수록 향상되었다. 특히, 소스와 기판사이의 거리가 5 mm 일 때, 산화아연 나노선이 관찰되었으며 XRD 와 PL 분석에서 나타난 반가폭 (full width at half maximum)은 $0.061^{\circ}$ 와 96 meV로써 가장 작았다. 산화아연 나노선은 산화아연 나노입자와 비교하여, 결정성 및 광학적 특성이 우수하였다.

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