• Title/Summary/Keyword: electron transfer layer

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Nanoscale Protein Chip based on Electrical Detection

  • Choi, Jeong-Woo
    • 한국생물공학회:학술대회논문집
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    • 2005.04a
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    • pp.18-18
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    • 2005
  • Photoinduced electron transport process in nature such as photoelectric conversion and long-range electron transfer in photosynthetic organisms are known to occur not only very efficiently but also unidirectionally through the functional groups of biomolecules. The basic principles in the development of new functional devices can be inspired from the biological systems such as molecular recognition, electron transfer chain, or photosynthetic reaction center. By mimicking the organization of the biological system, molecular electronic devices can be realized $artificially^{1)}$. The nano-fabrication technology of biomolecules was applied to the development of nano-protein chip for simultaneously analyzing many kinds of proteins as a rapid tool for proteome research. The results showed that the self-assembled protein layer had an influence on the sensitivity of the fabricated bio-surface to the target molecules, which would give us a way to fabricate the nano-protein chip with high sensitivity. The results implicate that the biosurface fabrication using self-assembled protein molecules could be successfully applied to the construction of nanoscale bio-photodiode and nano-protein chip based on electrical detection.

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Characteristics of Tin Oxide Thin Film Grown by Atomic Layer Deposition and Spin Coating Process as Electron Transport Layer for Perovskite Solar Cells (원자층 증착법과 용액 공정법으로 성장한 전자 수송층 산화주석 박막의 페로브스카이트 태양전지 특성)

  • Ki Hyun Kim;Sung Jin Chung;Tae Youl Yang;Jong Chul Lim;Hyo Sik Chang
    • Korean Journal of Materials Research
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    • v.33 no.11
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    • pp.475-481
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    • 2023
  • Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO2 applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 ℃. PSC using ALD SnO2 as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO2 showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO2 layer was 0.75 mA/cm2 higher than that of the spin coated SnO2. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO2. Therefore ALD SnO2 is a candidate as a ETL for use in PSC vacuum deposition.

Nature of Surface and Bulk Defects Induced by Epitaxial Growth in Epitaxial Layer Transfer Wafers

  • Kim, Suk-Goo;Park, Jea-Gun;Paik, Un-Gyu
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.4
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    • pp.143-147
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    • 2004
  • Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

White Light-Emitting Electroluminescent Device with a Mixed Single Emitting Layer Structure (혼합 발광층을 이용한 백색 전계발광소자의 발광특성)

  • 김주승;서부완;구할본;조재철;박복기
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.606-609
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    • 1999
  • We fabricated white light-emitting diode which have a mixed single emitting layer containing poly(N-vinylcarbazole), trois(8-hydroxyquinoline)aluminum and poly(3-hexylthiophene) and investigated the emission properties of it. It is possible to obtain a blue light from poly(N-vinylcarbazole). green light from tris(8-hydroxyquinoline)aluminum and red light from poly(3-hexylthiophene). The fabricated device emits white light with slight orange light. We think that the energy transfer in a mixed layer occurred from PVK to Alq₃ and P3HT resulted in decreasing the blue light intensity from PVK. We find that the efficiency of the white light electroluminescent device can be improved by injecting electron more effectively and blue light need to improve the color purity of white light.

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Pore Size Control of a Highly Transparent Interfacial Layer via a Polymer-assisted Approach for Dye-sensitized Solar Cells

  • Lee, Chang Soo;Lee, Jae Hun;Park, Min Su;Kim, Jong Hak
    • Korean Chemical Engineering Research
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    • v.57 no.3
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    • pp.392-399
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    • 2019
  • A highly transparent interfacial layer (HTIL) to enhance the performance of dye-sensitized solar cells (DSSCs) was prepared via a polymer-assisted (PA) approach. Poly(vinyl chloride)-graft-poly(oxyethylene methacrylate) (PVC-g-POEM) was synthesized via atom-transfer radical polymerization (ATRP) and was used as a sacrificial template. The PVC-g-POEM graft copolymer induced partial coordination of a hydrophilic titanium isopropoxide (TTIP) sol-gel solution with the POEM domain, resulting in microphase separation, and in turn, the generation of mesopores upon calcination. These phenomena were confirmed using Fourier-transform infrared (FT-IR) spectroscopy, UV-visible light transmittance spectroscopy, scanning electron microscopy (SEM), and X-ray diffraction (XRD) analysis. The DSSCs incorporating HTIL60/20 (consisting of a top layer with a pore size of 60 nm and a bottom layer with a pore size of 20 nm) exhibited the best overall conversion efficiency (6.36%) among the tested samples, which was 25.9% higher than that of a conventional blocking layer (BL). DSSC was further characterized using the Nyquist plot and incident-photon to electron conversion efficiency (IPCE) spectra.

Bond Distortion and Electron States in Charged $C_{60}{^2-}$

  • Fu, Rong-Tang;Fu, Rou-Li;Lee, Kee-Hag;Sun, Xin;Ye, Hong-Juan
    • Bulletin of the Korean Chemical Society
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    • v.14 no.6
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    • pp.740-743
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    • 1993
  • By considering both electron-electron and electron-lattice interactions, the effect of charge transfer on the bond structure and electronic states of $C_{60}$ is studied without configuration limitation. The results show that the electron-electron interaction does not eliminate the layer structure of the bond distortion and the self-trapping of transferred electrons. For charged ${C_{60}}^{2-}$, there exist two localized electronic states, which possess laminar wave functions, and four nonequivalent groups of carbon atoms, which induce a fine-structure in the NMR spectrum line.

Enhanced Efficiency of Nanoporous-layer-covered TiO2 NanotubeArrays for Front Illuminated Dye-sensitized Solar Cells

  • Kang, Soon-Hyung;Lee, Soo-Yong;Kim, Jae-Hong;Choi, Chel-Jong;Kim, Hyunsoo;Ahn, Kwang-Soon
    • Journal of Electrochemical Science and Technology
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    • v.7 no.1
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    • pp.52-57
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    • 2016
  • Nanoporous-layer-covered TiO2 nanotube arrays (Type II TNTs) were fabricated by two-step electrochemical anodization. For comparison, conventional TiO2 nanotube arrays (Type I TNTs) were also prepared by one-step electrochemical anodization. Types I and II TNTs were detached by selective etching and then transferred successfully to a transparent F-doped SnO2 (FTO) substrate by a sol-gel process. Both FTO/Types I and II TNTs allowed front side illumination to exhibit incident photon-to-current efficiencies (IPCEs) in the long wavelength region of 300 to 750 nm without the absorption of light by the iodine-containing electrolyte. The Type II TNT exhibited longer electron lifetime and faster charge transfer than the Type I TNT because of its relatively fewer defect states. These beneficial effects lead to a high overall energy conversion efficiency (5.32 %) of the resulting dye-sensitized solar cell.

Direct printing of organic single crystal nanowire arrays by using Liquid-bridge-mediated nanotransfer molding

  • Oh, Hyun-S.;Baek, Jang-Mi;Sung, Myung-M.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.473-473
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    • 2011
  • In recent years, organic thin film transistors OTFTs based on conductive-conjugated molecules have received significant attention. We report a fabrication of organic single crystal nanowires that made on Si substrates by liquid bridge-mediated nanotransfer molding (LB-nTM) with polyurethane acrylate (PUA) mold. LB-nTM is based on the direct transfer of various materials from a stamp to a substrate via a liquid bridge between them. In liquid bridge-transfer process, the liquid layer serves as an adhesion layer to provide good conformal contact and form covalent bonding between the organic single crystal nanowire and the Si substrate. Pentacene is the most promising organic semiconductors. However pentacene has insolubility in organic solvents so pentacene OTFTs can be achieved with vacuum evaporation system. However 6, 13-bis (triisopropylsilylethynyl) (TIPS) pentacene has high solubility in organic solvent that reported by Anthony et al. Furthermore, the substituted rings in TIPS-pentacene interrupt the herringbone packing, which leads to cofacial ${\pi}-{\pi}$ stacking. The patterned TIPS-Pentacene single crystal nanowires have been investigated by Atomic force microscopy (AFM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and electrical properties.

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Simultaneous Transfer and Patterning of CVD-Grown Graphene with No Polymeric Residues by Using a Metal Etch Mask

  • Jang, Mi;Jeong, Jin-Hyeok;Trung, T.Q.;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.642-642
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    • 2013
  • Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

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Electrochemical Characteristics of Water-Soluble Phosphate-Functionalized Naphthalene- and Perylene-Bisimides and Their Zirconium Bisphosphate Multilayers on ITO Electrode

  • Cho, Kwang Je;Kim, Yeong Il;Shim, Hyun Kwan
    • Journal of the Korean Chemical Society
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    • v.63 no.1
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    • pp.37-44
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    • 2019
  • N,N'-bis(ethyldihydrogen phosphate)-1,4,5,8-naphthalene bis(dicarboximide) (EPNI) and N,N'-bis(ethyldihydrogen phosphate)-3,4,9,10-perylene bis(dicarboximide) (EPPI) and their zirconium bisphosphate multilayers (Zr-EPNI and Zr-EPPI), that had been briefly reported by us, were further investigated in terms of their electrochemical properties. EPNI in aqueous solution showed typical two reversible reductions at ITO electrode but the reductions were strongly dependent on solution pH while EPPI showed only an irreversible reduction. The single and mixed multilayers of Zr-EPNI and Zr-EPPI were well constructed on ITO electrode by the alternate adsorptions of zirconium ion and the bisimides. While Zr-EPNI multilayer on ITO electrode showed single broad reversible reduction with $E_{1/2}=-0.68V$, Zr-EPPI gave two separated reductions at $E_{1/2}=-0.54$ and -0.81 V vs SCE, quite differently from the solution properties. The average layer densities of the multilayers were estimated as $1.5{\times}10^{-10}$ and $2.3{\times}10^{-10}mol/cm^2$ for Zr-EPNI and Zr-EPPI, respectively. Both the monolayers of Zr-EPNI and Zr-EPPI could not completely block the electron transfer between $Fe(CN){_6}^{3-}$ in solution and ITO electrode but 3-5 layers of Zr-EPNI and Zr-EPPI could block it completely and mediated the one-way electron transfer at the potential shifted to their reduction potentials. When the monolayer of zirconium 1,10-decanediylbisphosphonate (Zr-DBP) was used as a sublayer of Zr-EPNI and Zr-EPPI layers, the mediated electron transfer became prominent without any direct electron transfer.