• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.490-496
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• 2015

We have grown AlN/GaN heterostructure which is a promising candidate for mm-wave applications. For the growth of the high quality very thin AlN barrier, indium was introduced as a surfactant at the growth temperature varied from 750 to $1070^{\circ}C$, which results in improving electrical properties of two-dimensional electron gas (2DEG). The heterostructure with barrier thickness of 7 nm grown at of $800^{\circ}C$ exhibited best Hall measurement results; such as sheet resistance of $215{\Omega}/{\Box}$electron mobility of $1430cm^2/V{\cdot}s$, and two-dimensional electron gas (2DEG) density of $2.04{\times}10^{13}/cm^2$. The high electron mobility transistor (HEMT) was fabricated on the grown heterostructure. The device with gate length of $0.2{\mu}m$ exhibited excellent DC and RF performances; such as maximum drain current of 937 mA/mm, maximum transconductance of 269 mS/mm, current gain cut-off frequency of 40 GHz, and maximum oscillation frequency of 80 GHz.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1985년도 하계학술회의논문집
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• pp.215-218
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• 1985

In this paper, The electron drift velocity was measured from an experimental study of the open end heat pipe system by induced current method as alkali metal vapour was generated in ordinary region of a drift tube. The test condition was alkali metal vapour range from 3.6 to 20.1(Torr), temperature of 667 to 755(K), and E/N of $1{\times}10^{-16}$ to $1{\times}10^{-15}(v.cm^2)$. The results of this study were obtained essentially the same as the extrapolated prediction curve for electron drift velocity in the alkali metal Vapour of J. Lucas et 31 with range of E/N: $1{\times}10^{-17}$ to $1{\times}10^{-16}(v.cm^2)$, and the electron drift velocity was obtained the result an increase in alkali to E/N range from E/N $2.8{\times}10^{-17}$ to $5.6{\times}10^{-16}(v.cm^2)$ (E/N From 2.8 to 50 Td).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.184-185
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• 2007

We investigated the growth behaviors of ZnO epilayers on sapphire substrates fabricated sing RF magnetron puttering and RTA. The effects of deposition temperature and oxygen partial pressure in plasma on the structural and electrical properties were measured by XRD, AFM, SEM, and Hall effect measurement. It was found that ZnO thin films became denser and smoother with increasing deposition temperature and $O_2$ content in the puttering gas. ZnO thin film of oxygen and argon with a ratio of 5:5 had an electron concentration of $8.048{\times}10^{18}cm^{-3}$, resistivity of $0.0141{\Omega}{\cdot}Cm$, and mobility of $55.07cm^2/V{\cdot}s$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.33-36
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• 1999

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin-films were prepared on Pt/Ti/Si0$_2$/Si substrates by RF magnetron sp-uttering method. We investigated electric and dielectric properties of BST thin-films with various ann-ealing temperature using in-sute RTA. Deposition conditions of BST films were set substrate temperat-ure, 30$0^{\circ}C$ and working gas ratio, Ar:O$_2$=90:10. After BST films deposited, we fabricated a capacitor of MIM structure with Al top electrode for measurement. Post-annealing using RTA performed at 40$0^{\circ}C$, $600^{\circ}C$, 80$0^{\circ}C$ for 60 sec, respectively. Also we exacted crystallization and composition of BST thin-films by XRD analysis. In measurement result, this capacitors showed a dielectric constant of about 200 at 1MHz and leakage current density of 5$\times$10$^{-8}$ A/$\textrm{cm}^2$ at 1.5V Microstructure of BST thin-films exhibited effective quality in low-temperature annealed 71ms than high-temperature annealed 71ms.s.s.

• Nuclear Engineering and Technology
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• 제8권1호
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• pp.9-17
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• 1976

고준위 전자선량을 측정하기 위하여 두께 0.1mm인 polycarbonate 필름을 선정하여 선량계 특성을 조사하였다. 선량범위는 1.0-130Mrad이며 도정곡선을 이용하여 200Mrad까지도 측정할 수 있었고 측정요차는 3.5% 이내였다. 330nm데서 측정한 농도는 실온에서는 조사후 1일 동안에 약 7-13% 감소하였으며 그 후의 감소율은 매우 적어 약 0.6%/일 였다. 조사후의 농도변화는 흡수선량, 보존온도 및 파장에 따라 상이하였기 때문에 조사후 경과시간 및 보존온도와 조사시의 온도에 관한 효과를 검토하였다. 이 선량계를 사용할때에는 농도 변화의 오차를 줄이기 위해서는 1일후에 농도를 측정하거나 혹은 10$0^{\circ}C$에서 1시간 열 처리가 필요하였다.

• 분석과학
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• 제8권4호
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• pp.477-480
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• 1995

Isotopic-spectral method [I] was applicated for determination of carbon in silicate materials (pure silica, guartz glasses, geological probs etc.). Isotopic heterogeneous balancing of carbon in gaseous phase and solid samples was carried out at the temperature of $1500-1900^{\circ}K$. Spectroscopic measuring of isotope concentration in a balanced gas was made using the electron-vibrational band heads of CO molecules excited in HF discharge. Limits of detection of carbon concentrations appear to be $n^*10^{-6}$.

• 보존과학연구
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• 통권15호
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• pp.1-20
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• 1994

A typology was established for 15 pottery artefacts at Chejuisland. Conjectured methods of manufacture were confirmed by radiography X-ray diffraction. Scanning electron microscopy etc. The compositions and mineralogy of $500^{\circ}C$ to $1200^{\circ}C$ was measured and compared with those of microstructure. The mechanism of sintering was impurity-initiated, liquid-phase sintering. The making, firing, and sometimes exploding of the figurines may have been the prime function of the pottery at this site rather than being manufactured as permanent, portable object.

• 약학회지
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• 제12권3_4호
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• pp.41-49
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• 1968

The optimum reaction conditions for the preparation of the precipitated calcium carbonate of an average particle size of 0.05.mu. in diameter was set in which the Box-Wilson Plan was applied. The reaction conditions are as follows; 1) concentration of milk of lime; 6.56% w/w 2) temperature; 14.24.deg. C #) velocity of carbon dioxide introducing; 1.95l/min. The crystal form was found that of calcite in X-ray diffraction analysis. The particle size was determined by the sedimentation volume measurement. The shape was identified by the elctron micro-diffraction pattern and the electron microscopic photographs.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2005년도 추계학술발표회
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• pp.899-900
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• 2005

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 춘계학술대회
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• pp.786-788
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• 2013

몰리브덴(Molybdenum) 박막은 높은 전기전도성을 가진 금속으로 CIGS계 태양전지의 후면전극으로 많이 사용되고 있다. 스퍼터링법을 통해 증착되는 몰리브덴 박막의 경우, 전기 전도성 및 기판과의 밀착성은 스퍼터 전력 및 압력과 같은 공정 조건에 따라 변화된다. 본 연구에서는 DC 마그네트론 스퍼터링법을 이용하여 몰리브덴 박막을 Ar 가스 분위기에서 압력별로 증착하였다. SEM(scanning electron microscope), XRD(X-ray Diffraction), 4-point probe, 광반사율, Hall measurement를 이용하여 박막의 전기적, 구조적 특성을 분석하였다.