• 전기의세계
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• 제23권6호
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• pp.49-55
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• 1974

Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

• Journal of Astronomy and Space Sciences
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• 제19권2호
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• pp.123-132
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• 2002

다목적 실용위성 1호는 고도 685km, $98^{\circ}$의 궤도 경사각를 가지며, 탑재된 이온층 측정 센서(Ionospheric Measurement Sensor)로 전자 온도와 전자 밀도를 측정하였다. 이 관측 자료로부터 22:50LT인 밤 시간에 $+60^{\circ}~-60^{\circ}$의 저위도 지역에서 자기적으로 안정한 상태(Kp <4)의 계절별 전자 밀도와 전자 온도의 분포를 구하였다. 관측 결과, 전자 온도와 전자 밀도의 분포는 계절과 경도에 따라 변화를 나타냈다. 대체로 전자 밀도는 자기 적도 부근에서 높아지고, 전자 온도는 낮아지는 경향을 보였다. 봄, 가을에는 전자 밀도와 온도 모두 자기 적도를 중심으로 대칭적으로 분포하였다. 그러나 여름에는 전체적으로 북반구 쪽으로 이동하여 전자 밀도의 극대점과 전자 온도의 극소점이 자기 적도 북쪽에 위치하였고, 겨울에는 이와 반대의 변화를 나타냈다. 또한, 각 계절에서 경도에 따라서도 전자 온도와 밀도 분포의 차이를 보였다. 이러한 차이가 생기는 원인은 경도와 계절에 따라 달라지는 F층의 중성 바람이 이온층 플라즈마에 영향을 주는 것에 의해 설명될 수 있다. 이 관측에서 얻은 전자온도와 밀도의 분포는 IRI95모델을 이용해 구한 분포와 차이를 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.234-234
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• 2011

Electron-neutral collision frequency is one of the important parameters in the plasma physics and in industrial plasma engineering. We can understand the momentum, energy, and charge transport properties of the plasma using electron-neutral collision frequency.[1] The wave-cutoff method is a diagnostic method for the electron density measurement, but the cutoff peak value depends on gas pressure. The wave-cutoff signal becomes unclear as increasing gas pressure. The reason of pressure dependence is that the electron-neutral collision disturbs electron motion so that microwave can propagate through plasma at plasma frequency.[2] Using the pressure dependence of wave-cutoff method we can find the electron-neutral collision frequency. At first we tried to confirm this method using well known gas such as Ar. The cutoff signal decrease as increasing gas pressure (the simulation result). The wave-cutoff signal is unclear at a gas pressure of 500 mTorr. (electron density $1.0{\times}10^{10}/cm^3$, electron temperature 1.7 eV, electron -neutral collision frequency~1 GHz). In this condition, the electron-neutral collision frequency is closed to the wave-cutoff frequency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.525-525
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• 2013

Low temperature plasma diagnosis is one of the big issues in laboratory scale or processing industry. One of the most powerful techniques of plasma diagnostics is the use of the scattering of electromagnetic radiation from the plasma. Electron temperature and density are important parameters for understanding the information of plasmas in the plasma processing industry. Laser scattering experiments on plasma can provide a substantial amount of information about plasma parameters such as the electron density ne, the electron temperature Te, and the neutral density nn and temperature Tn. Thomson scattering spectroscopy is used several method, in accordance with detector type. Commonly, Thomson scattering is used several notch filter to separate expanded wavelength. Since using a spectrometer with surface relief grating or notch filter, the system of the measurement will be complicated and bigger. In this study, using VPHG (Volume Phase Holographic Grating) in order to install the simple and cheap system. VPHG has the advantage of the system installation, because it can be Transmission Type. The diffraction efficiency and dispersion angle of VPHG is higher than the surface relief grating relatively. For a wavelength and bandwidth selection, Using a slit or mask to select a rejection wavelength instead of notch filter.

• 한국진공학회지
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• 제12권1호
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• pp.64-69
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• 2003

원자력산업용 소재로 사용되는 가돌로니엄 (Gd, 원자번호 64) 금속을 20 kW 내외의 고출력 전자빔을 이용하여 용융시키고, 그 용융면의 온도 분포를 측정하였다 광학 필터들과 렌즈구경 크기를 조절하여 용융면에서 발생하는 방사강도를 ccd 카메라로 받아들이고 실시간으로 컴퓨터에 저장하였다. 이 방법을 이용하여 전자빔의 출력에 따른 용융면의 크기를 실시간으로 모니터 할 수 있어 안정적인 전자빔의 동작이 가능하였다 그리고 가돌로니엄 금속 용융면을 흑체복사로 가정하고 Planck's law를 적용한 결과는 적외선 온도계로 측정한 결과보다 동일한 전자빔 출력에서 100~$200^{\circ}C$ 높은 값을 보였다.

• 한국전기전자재료학회논문지
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• 제29권1호
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• pp.11-16
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• 2016

The conduction behavior and electron concentration change in a-IGZO thin-films according to the RTA (rapid thermal annealing) were studied. The electrical characteristics of TFTs (thin-film-transistors) annealed by different temperatures were measured. The sheet resistance, electron concentration, and oxygen vacancy of a-IGZO film were measured by the four-point-probe-measurement, hall-effect-measurement, and XPS analysis. The RTA process increased the driving current of IGZO TFTs but the VTH shifted to the negative direction at the same time. When the RTA temperature is higher than $250^{\circ}C$, the leakage current at off-state increased significantly. This is attributed to the increase of oxygen vacancy resulting in the increase of electron concentration. We demonstrate that the RTA is a promising process to adjust the VTH of TFT because the RTA process can easily modify the electron concentration and control the conductivity of IGZO film with short process time.

• 천문학회지
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• 제37권5호
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• pp.543-546
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• 2004

The inverse Compton scattering of the cosmic microwave background (CMB) radiation with electrons in the intracluster medium which has a temperature gradient, was examined by the third-order perturbation theory of the Compton scattering. A new type of the spectrum distortion of the CMB was found and named as gradient T Sunyaev-Zel'dovich effect (gradT SZE). The spectrum has an universal shape. There is a zero distortion point, the cross over frequency, at 326GHz. When the hotter region locates closer to an observer, the intensity becomes brighter than the CMB in the frequency region lower than the cross over frequency and fainter than the CMB in the frequency region higher than the cross over frequency. When the cooler region locates closer to an observer, the distorted part of the spectrum has an opposite sign to the above case. The amplitude of the spectrum distortion does not de-pend on the electron density and depends on the heat conductivity and the total temperature variation along a line of sight. Therefore, the gradT SZE provides an unique opportunity to measure thermally nonequilibrium electron momentum distribution function in the ICM and combined with the X-ray measurements of the electron temperature distribution provides an opportunity of direct measurement of the heat conductivity in the ICM.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.332-332
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• 2011

The extreme ultraviolet (EUV) radiation, whose wavelength is from 120 nm down to 10 nm, and the energy from 10 eV up to 124 eV, is widely utilized such as in photoelectron spectroscopy, solar imaging, especially in lithography and soft x-ray microscopy. In this study, we have investigated the plasma diagnostics as well as the debris characteristics between the two types of dense plasma focusing devices with coaxial electrodes of Mather and hypocycloidal pinch (HCP), respectively. The EUV emission intensity, electron temperature and plasma density have been investigated in these cylindrical focused plasma along with the debris characteristics. An input voltage of 5 kV has been applied to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas at pressure ranged from 1 mTorr and 180 mTorr. The inner surface of the cathode was covered by polyacetal insulator. The central anode electrode has been made of tin. The wavelength of the EUV emission has been measured to be in the range of 6~16 nm by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission has also been measured by the spectrometer with the wavelength range of 200~1,100 nm. The electron temperature and plasma density have been measured by the Boltzmann plot and Stark broadening methods, respectively, under the assumption of local thermodynamic equilibrium (LTE).

• 한국표면공학회지
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• 제32권3호
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• pp.385-388
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• 1999

Electron field emission properties from various CVD diamond films were studied. Diamond films were synthesized by microwave plasma CVD at 1173K and at 673K substrates temperature and pulse microwave plasma CVD at 1173K. B-doped diamond film was synthesized by microwave plasma CVD at 1173K also. Estimation by SEM, both the non-doped diamond film and B-doped diamond film which were synthesized at 1173K substrate temperature were $2~3\mu\textrm{m}$ in diameter and nucleation densities were $10^{8}{\;}numbers/\textrm{cm}^2$ order. The diamond film synthesized at 673K was $0.2\mu\textrm{m}$ in diameter and nucleation densities was 109 numbers/cm2 order. The diamond film synthesized by pulse microwave plasma CVD at 1173K was $0.2\mu\textrm{m}$ in diameter and nucleation density was $10^{9}{\;}numbers/\textrm{cm}^2$ order either. From the result of electron field emission measurement, electron field emission at $20V/\mu\textrm{m}$ from CVD diamond film synthesized by pulse microwave plasma CVD was $37.3\mu\textrm{A}/\textrm{cm}^2$ and the diamond film showed the best field emission property comparison with other CVD diamond.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.63-66
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• 1995

The ohmic characterization of Au/Te/Au/n-GaAs structure is investigated by the application of x-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the results of XRD measurement show the sharpening of the Au-Ga peak and the increasing of the intensity of Au peak due to the crystallization. At 400$^{\circ}C$, which is the ohmic onset point, Ga$_2$Te$_3$peak gets evident and GaAs regrowth peak appears for the samples annealed at 500$^{\circ}C$. The variation of shottky contact to ohmic contact is confirmed by the I-V curve transition. The specific contact resistance of 3.8x10$\^$-5/$\Omega$-$\textrm{cm}^2$ is obtained for the sample annealed at 500$^{\circ}C$ and above 600$^{\circ}C$ the specific contact resistance increased due to the decomposition of GaAs substrate.