• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.6
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• pp.812-819
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• 2012

Interference and jamming are becoming increasing concern to a radar system nowdays. AESA(Active Electronically Steered Array) antennas and adaptive beamforming(ABF), in which antenna beam patterns can be modified to reject the interference, offer a potential solution to overcome the problems encountered. In this paper, we've developed a planar active phased array radar system, in which ABF, target detection and tracking algorithm operate in real-time. For the high output power and the low noise figure of the antenna, we've designed the S-band TRMs based on GaN HEMT. For real-time processing, we've used wavelenth division multiplexing technique on fiber optic communication which enables rapid data communication between the antenna and the signal processor. Also, we've implemented the HW and SW architecture of Real-time Signal Processor(RSP) for adaptive beamforming that uses SMI(Sample Matrix Inversion) technique based on MVDR(Minimum Variance Distortionless Response). The performance of this radar system has been verified by near-field and far-field tests.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.199-202
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• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.99-100
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• 2006

Silicon-on-insulator(SOI) MOSFET with SiGe/Si heterostructure channel is an attractive device due to its potent use for relaxing several limits of CMOS scaling, as well as because of high electron and hole mobility and low power dissipation operation and compatibility with Si CMOS standard processing. SOI technology is known as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage roll-off issues in sub-deca nano-scale devices. For the forthcoming generations, the combination of SiGe heterostructures and SOI can be the optimum structure, so that we have developed SOI n-MOSFETs with SiGe/Si heterostructure channel grown by reduced pressure chemical vapor deposition. The SOI n-MOSFETs with a SiGe/Si heterostructure are presented and their DC characteristics are discussed in terms of device structure and fabrication technology.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 1999.04a
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• pp.149-156
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• 1999

In the United States (U.S.), the monitored natural attenuation (MNA) approach has been used as an alternative remedial option for organic and inorganic compounds retained in soil and dissolved in groundwater. The U.S. Environmental Protection Agency (EPA) defines the MNA as“in-situ naturally-occurring processes include biodegradation, diffusion, dilution, sorption, volatilization, and/or chemical and biochemical stabilization of contaminants and reduce contaminant toxicity, mobility or volume to the levels that are protective of human health and the environment”. The Department of Soil Environment. National Institute Environmental Research (NIER) is in the process for demonstrating the MNA approach as a potential remedial option for the BTEX contaminated site in Uiwang City. The project is charactering the research site in terms of the nature and extend of contamination, biological degradation rate, and geochemical and hydrological properties. The microbial-degradation rate and effectiveness of nutrient and redox supplements will be determined through laboratory batch and column tests. The geochemical process will be monitored for determining the concentration changes of chemical species involved in the electron transfer processes that include methanogenesis, sulfate and iron reduction, denitrification, and aerobic respiration. Through field works, critical soil and hydrogeologic parameters will be acquired to simulate the effects of dispersion, advection, sorption, and biodegradation on the fate and transport of the dissolved-phase BTEX plume using Bioplume III model. The objectives of this multi-years research project are (1) to evaluate the MNA approach using the BTEX contaminated site in Uiwang City, (2) to establish a standard protocol for future application of the approach, (3) to investigate applicability of the passive approach as a secondary treatment remedy after active treatments. In this presentation, the overall picture and philosophy behind the MNA approach will be reviewed. Detailed discussions of the site characterization/monitoring plans and risk-based decision-making processes for the demonstration site will be included.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.664-671
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• 2017

A composite material was prepared for the bipolar plates of phosphoric acid fuel cells(PAFC) by hot pressing a flake type natural graphite powder as a filler material and a fluorine resin as a binder. Average particle sizes of the powders were 610.3, 401.6, 99.5, and $37.7{\mu}m$. The density of the composite increased from 2.25 to $2.72g/cm^3$ as the graphite size increased from 37.7 to $610.3{\mu}m$. The anisotropy ratio of the composite increased from 1.8 to 490.9 as the graphite size increased. The flexural strength of the composite decreased from 15.60 to 8.94MPa as the graphite size increased. The porosity and the resistivity of the composite showed the same tendencies, and decreased as the graphite size increased. The lowest resistivity and porosity of the composite were $1.99{\times}10^{-3}{\Omega}cm$ and 2.02 %, respectively, when the graphite size was $401.6{\mu}m$. The flexural strength of the composite was 10.3MPa when the graphite size was $401.6{\mu}m$. The lowest resistance to electron mobility was well correlated with the composite with lowest porosity. It was possible the flaky large graphite particles survive after the hot pressing process.

• Nuclear Engineering and Technology
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• v.43 no.6
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• pp.567-572
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• 2011

A sensitivity analysis of the methods used to evaluate the transport properties of a CdZnTe detector was performed using two different radiations (${\alpha}$ particle and gamma-ray) emitted from an $^{241}Am$ source. The mobility-lifetime products of the electron-hole pair in a planar CZT detector ($5{\times}5{\times}2\;mm^3$) were determined by fitting the peak position as a function of biased voltage data to the Hecht equation. To verify the accuracy of these products derived from ${\alpha}$ particles and low-energy gamma-rays, an energy spectrum considering the transport property of the CZT detector was simulated through a combination of the deposited energy and the charge collection efficiency at a specific position. It was found that the shaping time of the amplifier module significantly affects the determination of the (${\mu}{\tau}$) products; the ${\alpha}$ particle method was stabilized with an increase in the shaping time and was less sensitive to this change compared to when the gamma-ray method was used. In the case of the simulated energy spectrum with transport properties evaluated by the ${\alpha}$ particle method, the peak position and tail were slightly different from the measured result, whereas the energy spectrum derived from the low-energy gamma-ray was in good agreement with the experimental results. From these results, it was confirmed that low-energy gamma-rays are more useful when seeking to obtain the transport properties of carriers than ${\alpha}$ particles because the methods that use gamma-rays are less influenced by the surface condition of the CZT detector. Furthermore, the analysis system employed in this study, which was configured by a combination of Monte Carlo simulation and the Hecht model, is expected to be highly applicable to the study of the characteristics of CZT detectors.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.28 no.3
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• pp.273-282
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• 2018

Objectives: Dustiness of nanomaterials is considered as exposure index of essential material. Research on dustiness of nanomaterial is needed to control exposure in workplaces. Method: Dustiness measurement using vortex shaker were installed in the laboratory. Nanomaterials, 1 g, was put in the glass test tube and shaked using vortex shaker. Aerosol dispersed was measured using scanning mobility particle sizer(SMPS) and optical particle counter(OPC). Mass concentration using PVC filter and cassette was measured and TEM grid sampling was conducted. Total particle concentration and size distribution were calculated. Image and chemical composition of particles in the air were observed using transmission electron microscopy and energy dispersive X-ray spectrometer. Eleven different test nanomaterials were used in the study. Results: Rank of mass concentration and particle number concentration were coincided in most cases. Rank of nanomateirals with low concentration were not coincided. Two types of fumed silica had the highest mass concentration and particle number concentration. Indium tin oxide, a mixture of indium oxide and tin oxide, had high mass concentration and particle number concentration. Indium oxide had very low mass concentration and particle number concentration. Agglomeration of nanoparticles in the air were observed in TEM analysis and size distribution. In this study, mass concentration and particle number concentration were coincided and two index can be used together. The range of dustiness in particle number concentration were too wide to measure in one method. Conclusion: Particle number concentration ranged from low concentration to high concentration depend on type of nanomaterial, and varied by preparation and amount of nanomaterial used. Further study is needed to measure dustiness of all nanomaterial as one reference method.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.209-209
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• 2010

금(Au) 또는 은(Ag) 금속 나노입자의 모양, 크기, 분포 상태를 조절하여 가시광선과 적외선, 자외선 영역에서 강한 표면 플라즈몬 효과을 이용할 수 있는데, 최근 이러한 금속 나노입자의 표면플라즈몬 효과를 이용하여 태양광 소자의 성능을 향상시키는 연구가 매우 활발하게 이루어지고 있다. 그 중, 높은 효율과 낮은 제작비용 그리고 간단한 공정과정의 장점을 갖고 있어서 크게 주목 받고 있는 염료감응태양전지에서도 금(Au) 또는 은(Ag) 금속 나노입자을 이용하기 위한 많은 연구가 진행되고 있다. 그 예로, Au가 코팅된 $TiO_2$ 기반의 염료감응태양전지구조를 제작하여, 입사된 빛이 표면플라즈몬 효과를 통해, Au에서 여기된 전자들이 Au/$TiO_2$ 사에의 schottky 장벽을 통과하여 $TiO_2$의 전도대 전자들의 밀도가 증가하여, charge carrier generating rate을 높여 소자의 광변환 효율의 향상을 증명하였다. 이에 본 연구에서는, $TiO_2$보다 높은 전자 이동도(mobility)와 직선통로(direct path way)의 장점을 갖고 있는 ZnO nanorod에서의 charge carrier generating rate을 높일 수 있도록, 비교적 가격이 저렴한 Ag nanoparticle을 코팅하였다. ZnO nanorod 제작은 낮은 온도에서 간단하게 성장시킬 수 있는 hydrothermal 방법을 이용하였다. 기판위에 RF magnetron 스퍼터를 이용하여 AZO seed layer를 증착한 후, zinc nitrate $Zn(NO_3)_2{\cdot}6H_2O$과 hexamethylentetramines (HMT)으로 혼합된 용액을 사용해 ZnO nanorods를 성장시켰다. 이 후, Ag를 형성할 수 있도록 열증기증착법을 이용하여 코팅하였다. Ag의 증착시간에 따른 ZnO nanorods에서의 코팅된 구조와 형태를 관찰하기 위해 field emission scanning electron microscopy (FE-SEM)을 이용하여 측정하였으며, 결정성을 조사하기 위해 X-ray diffraction (XRD)을 이용하여 분석하였다. 또한 입사된 빛에 의해, 여기된 ZnO 전도대 전자들이 다시 재결합을 통해 방출되는 photoluminescence 양을 scanning PL 장비를 통해 측정하여 Ag가 코팅된 ZnO nanorod의 광특성을 분석하였다.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.5
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• pp.325-333
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• 2021

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

• Journal of IKEEE
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• v.23 no.2
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• pp.425-430
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• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.