• Journal of Environmental Science International
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• v.27 no.7
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• pp.611-620
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• 2018

In this study, a metal-organic framework (MOF) material $NH_2$-MIL-101(Fe) was synthesized using the solvothermal method, and characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), UV-visible spectrophotometry, field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM), and surface area measurements. The XRD pattern of the synthesized $NH_2$-MIL-101(Fe) was similar to the previously reported patterns of MIL-101 type materials, which indicated the successful synthesis of $NH_2$-MIL-101(Fe). The FT-IR spectrum showed the molecular structure and functional groups of the synthesized $NH_2$-MIL-101(Fe). The UV-visible absorbance spectrum indicated that the synthesized material could be activated as a photocatalyst under visible light irradiation. FE-SEM and TEM images showed the formation of hexagonal microspindle structures in the synthesized $NH_2$-MIL-101(Fe). Furthermore, the EDS spectrum indicated that the synthesized material consisted of Fe, N, O, and C elements. The synthesized $NH_2$-MIL-101(Fe) was then employed as an adsorbent and photocatalyst for the removal of Indigo carmine and Rhodamine B from aqueous solutions. The initial 30 min of adsorption for Indigo carmine and Rhodamine B without light irradiation achieved removal efficiencies of 83.6% and 70.7%, respectively. The removal efficiencies thereafter gradually increased with visible light irradiation for 180 min, and the overall removal efficiencies for Indigo carmine and Rhodamine B were 94.2% and 83.5%, respectively. These results indicate that the synthesized MOF material can be effectively applied as an adsorbent and photocatalyst for the removal of dyes.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.63-77
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• 1998

The oxidation of NiAl(110) was investigated in the temperature regime between 300K and 1300 K using LEED (low energy electron diffraction), TPD (temperature programmed desorption) and HREELS (high resolution electron energy loss spectroscopy). The adsorption of N2O and O2 up to reconstructions. Stepwise annealing of the oxygen-saturated sample from 600 K to 1300K in UHV (ultra-high vacuum,) results in firstly the onset of randomly oriented then finally fairly well-ordered. 5 ${\AA}$ Al2O3 film with quasi-hexagonal periodicity. Ordered thicker oxide films of 18-30 ${\AA}$ seem to be grown on this interfacial oxide layer by direct oxidation of sample at elevated temperature between 1150 and 1300 K because of the LEED pattern consisting of new broad hexagonal spots and the previous 5 ${\AA}$ spots. Although the periodicity of surface oxygen arrays shows no significant change from an hexagonal close-packing, the O-O distance changes from ∼3.0 ${\AA}$ film to ∼2.9 ${\AA}$ for thicker oxides. with the appearance of Auger parameter, for the 5${\AA}$ film can be described better as an interfacial oxide layer. The observation of three symmetric phonon peaks can be also a supporting evidence for this phase assignment since thicker oxide films on the Same Ni2Al3(110) show somewhat different phonon structure much closer to that of the ${\gamma}$-Al2O3. The adsorption/desorption of methanol further proves the preparation of less-defective and/or oxygen-terminated Al2O3 films showing ordered phase transitions with the change of oxide thickness between 5 ${\AA}$ to 30 ${\AA}$.

• Nuclear Engineering and Technology
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• v.54 no.3
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• pp.1062-1070
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• 2022

In the present communication, pure and stable α-Bismuth Oxide (Bi₂O₃) nanoparticles (NPs) were synthesized by low temperature solution combustion method using urea as a fuel and calcined at 500℃. The synthesized sample was characterized by using powder X-ray Diffraction (PXRD), Scanning Electron Microscopy (SEM), Energy dispersive X-ray analysis (EDAX), Transmission Electron Microscopy (TEM), Fourier Transform Infrared Spectroscopy (FTIR) and UV-Visible absorption spectroscopy. The PXRD pattern confirms the formation of mono-clinic, stable and low temperature phase α-Bi₂O₃. The direct optical energy band gap was estimated by using Wood and Tauc's relation which was found to be 2.81 eV. The characterized sample was studied for X-ray/gamma ray shielding properties in the energy range 0.081-1.332 MeV using NaI (Tl) detector and multi channel analyzer (MCA). The measured shielding parameters agrees well with the theory, whereas, slight deviation up to 20% is observed below 356 keV. This deviation is mainly due to the influence of atomic size of the target medium. Furthermore an accurate theory is necessary to explain the interaction of X-ray/gamma ray with the NPs.The present work opens new window to use this facile, economical, efficient, low temperature method to synthesize nanomaterials for X-ray/gamma ray shielding purpose.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.162-165
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• 2011

In this paper, $CuInSe_2$ thin film was prepared by use of the co-evaporation method with the variation of the substrate temperature in the range of $100^{\circ}C$ to $400^{\circ}C$. The film was annealed at $300^{\circ}C$ for an hour in a vacuum chamber at $3{\times}10-4$ Pa. After annealing, the thin film prepared at the substrate temperatures of $100^{\circ}C$ and $200^{\circ}C$ was observed. The XRD (x-ray diffraction) pattern of sample prepared at $100^{\circ}C$ showed the single phase formation of $CuInSe_2$. However, at $200^{\circ}C$, there was no apparent difference in the XRD pattern except a variation in the intensity of the peak. As the annealing treatment of substrate improved the crystal structure of the film, it affected to the increase of an electron mobility, resulted in an increase in conductivity and a decrease in resistance. As a results, when the substrate temperature was at $200^{\circ}C$ and $300^{\circ}C$, the sheet resistance was 1.534 $\Omega/\Box$ and 1.554 $\Omega/\Box$, respectively, and the resistivity was $1.76{\times}10-6\;{\Omega}{\cdot}cm$ and $1.7210-6\;{\Omega}{\cdot}cm$, respectively. From the absorption spectrum measurements, there was no variation between the before and after annealing conductions. And it means that the annealing step does not affect the thickness of the thin film.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.20-24
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• 2017

Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated $Cu_2ZnSn(S_xSe_{1-x})_4$ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.

• Journal of the Korean Society of Food Science and Nutrition
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• v.26 no.1
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• pp.17-24
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• 1997

The effects of steeping on the physicochemical and gelatinization characteristics of glutinous rice flour and its starch were studied. Steeping conditions were 1 day at 25"C,7 days at 2iC and 7 days at 35"C. Crude protein, lipid and ash content were decreased br steeping. It was observed with scanning electron microscopy that endosperm cell wall of glutinous rice flour was diminished by steeping. Although morphology of the glutinous rice starch granules was not affected, the size was decreased by steeping. Density and water binding capacity(WBC) of glutinous rice flour and its starch were changed by steeping. X-ray diffraction pattern of glutinous rice starch was A type and was not affected by steeping. Swelling power of glutinous rice flour and its starch was increased but solubility was decreased by steeping. In Brabender amylographic examination, peak viscosity of untreated glutinous rice flour was very low and increased enormously by steeping resulting in the similar Brabender viscosity pattern to its starch. The gelatinization temperature examined by X-ray diffractometry was lowered by steeping. And the degree of gelatinization under the conclusion temperature increased with increasing of steeping Period and temperature.mperature.

• Korean Journal of Food Science and Technology
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• v.19 no.1
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• pp.18-22
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• 1987

Starch granules of cow pea were oval with their sizes of $6-22{\mu}$m. X-ray diffraction pattern of starch granules showed some crystallinity at $2{\theta}$ $15^{\circ}$, $17.1^{\circ}$, $18.1^{\circ}$, $22.9^{\circ}$. The blue value of starch was 0.370, amylose contents 28.1% and water binding capacity 70.6%. Swelling power of the starch increased rapidly from $65^{\circ}C$ to $75^{\circ}C$ thereafter increased less rapidly. Solubility showed the same pattern as the swelling power. Optical transmittance of 0.2% starch suspension was increased rapidly from $70^{\circ}C$ and the gelatinization between $70^{\circ}C$ and $90^{\circ}C$ was single stage. Amylogram of 4% starch solution showed no peak viscosity but 6% starch solution showed peak viscosity.

• Journal of Electrochemical Science and Technology
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• v.12 no.3
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• pp.346-357
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• 2021

In recent years, supercapacitors have been developed rapidly as a rechargeable energy storage device. And the performance of supercapacitors is depending on electrode materials, the preparation method and performance of electrode materials have become the primary goal of scientific development. This study synthesizes Co₃O₄@MnO₂@PPy cathode material with porous pattern core-shell structure by hydrothermal method and electrodeposition. The result samples are characterized by X-ray diffraction transmission/scanning electron microscope, and X-ray photoelectron spectroscopy. Electrochemical evaluation reveals that electrochemical performance is significantly enhanced by PPy depositing. The specific capacitance of Co₃O₄@MnO₂@PPy is 977 F g^-1 at 1 A g^-1, the capacitance retention rate of 105%. Furthermore, the electrochemical performance of Co₃O₄@MnO₂@PPy//AC asymmetric supercapacitor assembles with AC as the negative electrode material is significantly better than that of MnO₂//AC and Co₃O₄@MnO₂//AC. The capacity of Co₃O₄@MnO₂@PPy//AC is 102.78 F g^-1. The capacity retention rate is still 120% for 5000 charge-discharge cycles.

• Korean Journal of Materials Research
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• v.10 no.7
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• pp.478-481
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• 2000

Single phase $Pb(Mg_{1/3}Nb_{2/3})O_3$ ceramics doped by 10 mol% of electron donors such as $La^3,\; Pr^{3+,4+},\; Nd^{3+},\; Sm^{3+}$, were synthesized and their B-site cationic ordering structures were investigated by XRD and TEM. In the XRD patterns, only fundamental reflections were observed for the undoped $Pb(Mg_{1/3}Nb_{2/3})O_3$, while the (h/2 $\textsc{k}$/2ι/2)(h,$\textsc{k}$,ι all odd) superlattice reflections resulting from the 1:1 ordering induced unit cell doubling were also observed for the donor-doped $Pb(Mg_{1/3}Nb_{2/3})O_3$. In the TEM selected area diffraction patterns, the (h/2 k/2 l/2)(h,k,l all odd) superlattice reflection spots as well as the fundamental reflection spots were observed for all the samples, but the relative intensities of the superlattice reflection spots to the fundamental reflection spots were significantly enhanced by the donor-doping. In the TEM dark-field images, antiphase boundaries were observed only for the donor-doped $Pb(Mg_{1/3}Nb_{2/3})O_3$. It was therefore experimentally verified that doping by electron donors such as $La^3,\; Pr^{3+,4+},\; Nd^{3+},\; Sm^{3+}$, enhances the B-site cationic 1:1 ordering in $Pb(Mg_{1/3}Nb_{2/3})O_3$. These experimental results were interpreted in terms of the charge compensation mechanism.