• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1875-1878
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• 2005

It is not efficient and scarcely out of the question to use commercial expensive electron beam lithography system widely used for semiconductor fabrication process for the manufacturing application field of various devices in the small business scope. Then scanning electron microscope based electron beam machining system is maybe regarded as a powerful model can be used for it simply. To get a complete suite of thus proper system, column unit build up with electron beam gun head unit is necessarily required more than anything else to modify scanning electron microscope. In this study, various components included ceramic isolation plate and main body which are essentially constructed for electron beam gun head unit are designed and manufactured. And this electron beam gun head unit will be used for next connected study in the development step of scanning electron microscope based electron beam machining system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.151.2-151.2
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• 2016

We characterized the n-type organic field-effect transistors (OFETs) with non-conjugated polyelectrolytes (NPEs) interlayers as the electron injection layer. Novel NPEs with various ions (Cl-, Br-, I-) improved the electron mobility from $5.06{\times}10^{-3}$ to $2.10{\times}10^{-2}cm^2V^{-1}s^{-1}$ in OFETs based [6,6]-Phenyl-$C_{61}$-butyric acid methyl ester (PCBM) when $PEIEH^+I^-$ spin-cast from 0.6% solution was deposited onto the PCBM layer. Reduced electron injection barrier (${\phi}_e$) at NPE/metal electrode interface was induced by dipole formation and led to increase the electron injection and transport. These findings are important for understanding how NPEs function in devices, the improvement of device performance, and the design of new materials for use in optoelectronic devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.832-834
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• 1992

Using the PECVD method, the silicon nitride films were deposited by changing the $SiH_4/NH_3$ gas flow ratio from 0.2 to 1.4 at an interval of 0.2, AES, FTIR, and Spectroscopic Ellipsomter were used to analyze the film composition and structure, the refractive index, and the deposition rate. Also the C-V analysis was used to estimate the memory performance in the capacitor type MNOS memory devices, which utilized native oxide as the tunneling barrier, with the silicon nitride by the above deposition conditions. As a result, it was confirmed that the performance of MNOS memory devices with PECVD silicon nitride was comparable to that with LPCVD or APCVD silion nitride.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권2호
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• pp.37-41
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• 2001

In this study, organic electroluminescent devices with the ITO/TPD/Alq$_3$/cathode structure, using various materials of Al, Mg:Ag, Al:Li, MgF$_2$/Al, and LiF/Al as cathodes, were fabricated. We investigated the electrical and optical properties of the devices as follow: current density-voltage(J-V), luminance-voltage(L-V) and luminous efficiency-voltage curves. The bilayer cathodes with LiF/Al and MgF$_2$/Al exhibited better device performance than the other cathodes. It is considered that the improved performance of the organic electroluminescent devices is attributable to the lowering of driving voltage caused by the enhanced electron injection. The alkaline-earth fluorides are desirable materials to improve the performance of the EL devices with the Al cathode, and high luminous efficiency was achieved.

• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2005년도 생물공학의 동향(XVI)
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• pp.18-18
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• 2005

Photoinduced electron transport process in nature such as photoelectric conversion and long-range electron transfer in photosynthetic organisms are known to occur not only very efficiently but also unidirectionally through the functional groups of biomolecules. The basic principles in the development of new functional devices can be inspired from the biological systems such as molecular recognition, electron transfer chain, or photosynthetic reaction center. By mimicking the organization of the biological system, molecular electronic devices can be realized $artificially^{1)}$. The nano-fabrication technology of biomolecules was applied to the development of nano-protein chip for simultaneously analyzing many kinds of proteins as a rapid tool for proteome research. The results showed that the self-assembled protein layer had an influence on the sensitivity of the fabricated bio-surface to the target molecules, which would give us a way to fabricate the nano-protein chip with high sensitivity. The results implicate that the biosurface fabrication using self-assembled protein molecules could be successfully applied to the construction of nanoscale bio-photodiode and nano-protein chip based on electrical detection.

• 한국진공학회지
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• 제10권2호
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• pp.257-261
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• 2001

InGaAs/GaAs 초격자 구조들 사이에 InAs/GaAs 양자점을 MBE로 성장하고 광특성을 측정한 결과 매우 균일한 양자점을 얻을 수 있었다. Self-consistent한 이론 계산으로부터 얻은 p-i-n 구조의 최적 조건으로 단일광자구조를 성장하고 단일광자소자를 e-beam lithography를 이용하여 제작하였다. 전기적 특성인 I-V곡선에서 나타난 전기 이력현상으로부터 단일 전자와 단일 정공이 다른 전압에서 투과하여 단일 전자-정공 재결합 현상이 나타나고 있음을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.37-38
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• 2008

In this paper, we have developed Organic light-emitting devices(OLEDs) using various thicknesses of new electron transport layer. The device structure of ITO/ 2-TNATA(15nm)/ DPVBi(40nm)/ New ETL(20nm,60nm,100nm)/ LiF(0.5nm)/Al(100nm) has been used. The operating voltage of the device was almost independent of the new ETL thickness, due to its high electron conducting property. For example, the operating voltages of the devices with 20nm and 60nm layers are almost 5V at a current density $200mA/cm^2$. The device with the new ETL shows the low turn-on of 2.5V.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.513-516
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• 2008

The luminance efficiency of the red organic light-emitting devices fabricated utilizing a double electron transport layer (ETL) consisting of an Al-doped and an undoped layer was investigated. The Al atoms existing in the ETL acted as hole blocking sites, resulting in an increase in the luminance efficiency.

• ETRI Journal
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• 제17권2호
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• pp.11-19
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• 1995

The plasma densities generated from a semiconductor bridge (SCB) device employing a capacitor discharge firing set have been measured by a novel diagnostic technique employing a microwave resonator probe. The spatial resolution of the probe is comparable to the separation between the two wires of the transmission lines (${\approx}$3 mm). This method is superior to Langmuir probes in this application because Langmuir probe measurements are affected by sheath effects, small bridge area, and unknown fraction of multiple ions. Measured electron densities are related to the land material and input energy. Although electron densities in the plasma generated by aluminum or tungsten-land SCB devices show a general tendency to increase steadily with power, at the higher energies, the electron densities generated from tungsten-land SCB devices are found to remain constant.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.706-709
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• 2002

We investigated the effect of lithium 8-hydroxyquinolinolatolithium (Liq) as an electron injection layer on the performance of organic light emitting devices (OLEDs) and optimized the device efficiency by varying thickness of Liq layer. The device with 1nm Liq layer showed significant enhancement of the device performance and device lifetime. We also compared $Znq_2$ and LiBBOX with Liq as an electron injection layer.