• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.447-452
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• 1998

The selective dry etching of GaAs to Al\ulcornerGa\ulcornerAs using $BCI_3/SF_6$ gas mixture in electron cyclotron resonance(ECR) plasma is investigated. A selectivity of GaAs to AlGaAs of more than 100 and maximum etch rate of GaAs are obtained at a gas ratio $SF_6/BCI_3+SF_6$ of 25%. We verified the formation of $AlF_3$ on $Al_{0.25}Ga_{0.75}As$from the Auger spectra which enhanced the etch selectivity. In order to investigate surface damage of AlGaAs caused by ECR plasma, we performed a low temperature photoluminescence(PL) measurement as a function of RF power. As the RF power. As the RF power increases, the PL intensity decreases monotonically from 50 to 100 Wand then repidly decreases until 250 W. This behavior is due to surface damage by plasma treatment. This dry etching technique using $BCI_3/SF_6$ gas mixture in ECR plasma is suitable for gate recess formation on the GaAs based pseudomorphic high electron mobility transistor(PHEMT)

• 한국전기전자재료학회논문지
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• 제11권5호
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• pp.365-370
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• 1998

We studied a electrical properties in GaAs/AlGaAs/InGaAs pseudomorphic high electron mobility transistors(PHEMT s) recessed by electron cyclotron resonance(ECR) plasma and wet etching. Using the $NH_4OH$ solution, a nonvolatile AlF$_3$layer formed on AlGaAs surface after selective gate recess is effectively eliminated. Also, we controlled threshold voltage($V_th$) using $H_3PO_4$ etchant. We have fabricated a device with 540 mS/mm maximum transconductance and -0.2 V threshold voltage by using $NH_4OH$ and $H_3PO_4$dip after ECR gate recessing. In a 2-finger GaAs PHEMT with a gate length of 0.2$\mu m$ and width of 100 $\mu m$, a current gain of 15 dB at 10 GHz and a maximum cutoff frequency of 58.9 GHz have been obtained from the measurement of current gain as a function of frequency at 12mA $I_{dss}$ and 2 V souce-drain voltage.

• 한국진공학회지
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• 제18권3호
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• pp.186-196
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• 2009

하이퍼써멀 영역의 에너지 ($1{\sim}100\;eV$), 특히, 50 eV 이하의 에너지를 갖는 높은($10^{16}$ particles/$cm^2\;s$ 이상) 플럭스의 이온빔을 직접 인출하기는 어렵지만, 이온을 중성화한 중성입자빔 경우에는 가능하다. 높은 플럭스의 하이퍼써멀 중성입자빔을 생성하고 효율적으로 수송하기 위해서는 낮은 플라즈마 운전압력(0.3 mTorr 이하)에서도 높은 이온밀도($10^{11}\;cm^{-3}$ 이상)를 유지할 수 있는 대면적 플라즈마 발생원이 요구된다. 이러한 하이퍼써멀 중성입자빔의 생성을 위해 요구되는 플라즈마 발생원을 구현하기 위해서는 자기장에 의한 전자가둠 방식이 도입되어야 하는데, 영구자석을 이용한 다양한 자기장 구조를 갖는 Electron Cyclotron Resonance (ECR) 플라즈마 발생 방식이 하나의 해결 방법이 될 수 있음을 제안하였다. 여기에는 마그네트론 구조를 갖는 자기장을 채택한 평면형 ECR 플라즈마 발생 방식과 원통형 플라즈마 용기 외벽 둘레에 영구자석 어레이를 설치하여 축방향 자기장을 형성하고 용기 중심부에 전자를 가두는 원통형 방식이 있다. 두 경우 모두 기본적으로 mirror field 구조에 의한 전자 가둠을 기반으로 하고 전자의 drift에 의해 더욱 효율적으로 전자를 플라즈마 공간에 가두는 방식을 도입하고 있어서 낮은 운전압력에서도 높은 밀도의 플라즈마를 발생시키고 유지할 수 있다.

• 한국초전도ㆍ저온공학회논문지
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• 제18권2호
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• pp.25-29
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• 2016

High charge state electron cyclotron resonance (ECR) ion source is important on the performance of heavy ion accelerators. In this paper, a low temperature superconductor (LTS) was used to make a hexapole coil for an 18-GHz ECR ion source. Several hexapole structures, including racetrack, graded racetrack, and saddle were implemented and analyzed for the hexapole-in-solenoid ECR ion source system. Under the appropriate radial confinement field, the smaller outer radius of hexapole can be better for the solenoid design. Saddle hexapole was selected by comparing the wire length, maximum outer radius of the hexapole, the Lorentz force at the end part of the hexapole and the maximum magnetic field in the coil. Based on saddle hexapole, a new design for hexapoles, the snake hexapole, was developed in this paper. By comparative analysis of the Lorentz force at the end part of the saddle and snake hexapoles, the snake hexapole is much better in the ECR ion source system. The suggested design for the ECR ion source with the snake hexapole is presented in this paper.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.224-225
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• 2011

전자 사이클로트론 공명 이온원(Electron Cyclotron Resonance Ion Source; ECR 이온원)을 사용하여 다가(multi-charged) 이온빔을 인출하고 이온들을 분리하였다. 사용된 ECR 이온원은 그림 1과 같은 구조를 가진다. 그림 1에서 축자장을 만드는 자석(axial magnet)은 세 뭉치의 상전도 전자석으로, 그리고 육극자장을 만드는 자석(hexapole magnet)은 영구자석으로 되어 있으며 14.5 GHz 고주파는 도파관을 통하여 용기의 축과 평행한 방향으로 입사된다. 헬륨, 아르곤, 메탄(CH4), 이산화탄소(CO2)를 사용하여 빔 인출 및 이온 분리 실험을 진행하였으며, 본 논문에서는 운전조건의 최적화 과정을 수행하기 전에 진행된 초기 실험결과들에 대하여 논의한다. 그림 2는 헬륨을 사용한 경우의 질량 스펙트럼이다.

• 한국초전도ㆍ저온공학회논문지
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• 제18권2호
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• pp.37-41
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• 2016

This paper presents the developed quench analysis code and protection circuit design for a superconducting magnet system of 28GHz electron cyclotron resonance (ECR) ion source. The superconducting magnet is composed of a hexapole magnet and four solenoid magnets located outside of the hexapole one. All magnets are wound with NbTi composite wire and impregnated by epoxy. By using the developed characteristic analysis code, the normal zone resistance, decaying current and temperature rising can be estimated during quench. Also, the stored magnetic energy is successfully consumed from the series resistor of the designed protection circuit. The analytical results are compared with the experimental results to verify the developed quench analysis code and protection circuit.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.386-388
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• 1996

Low dielectric constant fluorinated oxide (SiOF) films were deposited using SiF$_4$/O$_2$/SiH$_4$mixtures by electron cyclotron resonance chemical vapor deposition (ECR CVD). Chemical composition of SiOF films was investigated by Fourier transform infrared spectroscopy (FT-lR). The fluorine content in the SiOF film observed by X-ray photoelectron spectroscopy (XPS). The dielectric constant decreased with increasing of the SiF$_4$ flow rate about 8sccm. The SiOF film, deposited with SiF$_4$=8 sccm, exhibited a F content of 5 atomic % and a relative dielectric constant 3.45. For evaluating SiOF films stability, humidity tests were performed.

• 한국세라믹학회지
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• 제42권2호
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• pp.94-98
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• 2005

[ $RuO_2$ ]는 DRAM과 FRAM소자에서 고유전 capacitors의 저전극물질로서 폭넓게 연구되고 있다. 본 연구에서는 XRD, SEM, AFM 분석 등을 통하여 금속유기 화학 증착법(MOCVD)으로 $RuO_2$ 증착시 핵생성에 영향을 미치는 수소, 산소, 아르곤 ECR플라즈마 전처리 효과를 조사하였으며, 아르곤 ECR플라즈마 전처리의 경우 가장 높은 핵생성 밀도를 나타내었다. ECR 플라즈마 전처리를 통한 $RuO_2$의 핵생성 향상 메카니즘은 아르곤이나 수소 ECR 플라즈마는 TiN막 표면의 질소나 산소원자를 제거하고 따라서 TiN막 표면은 Ti-rich TiN으로 바뀌게 되는 것이다.

• 전자공학회논문지A
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• 제32A권3호
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• 한국군사과학기술학회지
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• 제6권3호
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• pp.44-53
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• 2003

Cu/C films were prepared at room temperature under $Cu(hfac)_2-Ar-H_2$ atmosphere in order to obtain metallized polymer by using ECR-MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. The room temperature MOCVD on polymer substrate could be possible by collaboration of ECR and a DC bias. Structural analysis of the films by ECR was found that fine copper grains embedded in an amorphous polymer matrix with indistinctive interfacial layer. The increase in $H_2$ contents brought on copper-rich film formation with low electric resistance. On the other hand carbon-rich films with low sheet electric resistance were prepared in argon atmosphere. The electric sheet resistance of Cu/C films with good interfacial property were controlled at $10^8$~$10^0$ Ohm/sq. ranges by the $H_2$/Ar mole ratio and the shielding effectiveness of the film showed maximum up to 45dB in the our experimental range.