• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.260-260
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• 2009

In high-efficiency crystalline silicon solar cell, If high-efficiency solar cells are to be commercialized, It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper are applied widely in various electronic manufactures as easily formation is available by plating. Ni is shown to be a suitable barrier to Cu diffusin as well as desirable contact metal to silicon. Nickel monosilicide has been suggested as a suitable silicide due to its lower resistivitym lower sintering temperature and lower layer stress than $TiSi_2$. In this paper, Nickel as a seed layer and diffusion barrier is plated by electroless plating to make nickel monosilicide.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.128-129
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• 2013

Plasma 공정 부품의 경우, 기존 Anodizing 제품의 문제점을 개선하기 위해, 내마모, 내부식 특성이 우수한 NiWP를 적용하였다. 합금도금 종류에 따라 NiWP, NiWPB, NiWPS Electreolss laeyr 형성 후에 내부식 특성 거동 분석을 실시하였다. 그 결과 NiWP Electreoless layer가 높은 내부식 특성을 보였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.40-40
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.45-45
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• 1993

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.71-71
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• 2003

• Proceedings of the KWS Conference
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• 2002.05a
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• pp.272-275
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• 2002

• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.146-147
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• 2001

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.82-82
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• 1998

• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.202-206
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• 2005

The present investigation provides an electromagnetic radiation absorptive composition which comprises silver-coated ferrite microspheres dispersed in silicon rubber matrix for the aim of thin microwave absorber in GHz frequencies. Ni-Zn ferrite spheres with $50{\mu}m$ size in average were prepared by spray-drying and sintering at $1130^{\circ}C$. Conductive silver layer was plated on ferrite spheres by electroless plating. Conductive Ni-Zn ferrite sphere with uniform silver layer were obtained in the concentration of 10 g/L $AgNO_3$ per 20 g ferrite spheres. For this powder, electrical resistance is reduced as low as $10^{-2}\~10^{-3}\;\Omega$. The most sensitive material parameters with silver plating is real and imaginary parts of complex permittivity. The conductive Ni-Zn ferrite spheres have large values of dielectric constant. Due to this high dielectric constant of microspheres, matching thickness is reduced to as low as 2 mm at the frequency of 7 GHz, which is much thinner than conventional ferrite absorbers.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.51-56
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• 2014

The reliability of solder joint is significantly affected by the property of surface finish. This paper reports on a study of high speed shear energy and failure mode for Sn-4.0wt%Ag-0.5wt%Cu (SAC405) solder joints with the time of Pd activation. The nodule size of electroless Ni-P deposit increased with increasing the time of Pd activation. The roughness (Ra) of electroless Ni-P deposit decreased with increasing the time of Pd activation. Then, with $HNO_3$ vapor, the quasi-brittle and brittle mode of SAC405 solder joint decreased with increasing the time of Pd activation. This results indicate that the increase in the Pd activation time for Electroless Ni/ Electroless Pd/ Immersion Au (ENEPIG) surface finish play a critical role for improving the robustness of SAC405 solder joint.