• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.82-84
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• 2002

Dimensionally stable anode(DSA) can be used for the electrowinning of non-ferrous metal like as a Zn, and electrolysis of sea water. $MnO_2$ electrode satisfies the requirements of DSA, and has a good cycle life and a low overpotential for oxygen evolution. $MnO_2$ electrodes coated with DMF and PVDF based on Pb alloy produced at several compositions and dry temperatures. The viscosity of solvent used as a binder of $MnO_2$ powder increased with the increasing PVDF contents. When the ratio of PVDF to BMF with the 5 times dipping at the solution mixed with PVDF and DMF was 1/9, the coating thickness was $150{\mu}m$. When the ratio of PVDF to $MnO_2$ was lower than 1/6, the electrode didn't show any reaction irrespective of the concentrations of DMF. However, When the ratio of PVDF to $MnO_2$ was higher than 1/6, the electrode showed a constant current reactions and homogeneous cyclic voltammetry even though at a high cycle. The reason for the high current and homogeneous cyclic voltammetry is the good catalytic reactions of $MnO_2$ powder in electrode. The reactions of Pb electrode coated with $MnO_2$ and PVDF based on the pure Pb electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.12
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• pp.152-158
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• 2001

In this paper, we have developed an electro discharge machine for micro drilling driven by a voice coil actuator. Because the voltage signal of the electro-discharging circuit shows a lot of peaks and valleys, the active type low-pass filtering technique is adopted to get the average of the signal. Since the motion of the voice coil is precisely controlled by the error value between the object voltage value and the measured one, it is possible to prevent the mechanical contact between the rotating electrode and the workpiece and to maintain the appropriate machining conditions during the process. The electro-chemical machining technology was also adopted to make small diameter electrodes. Pure water is used as a dielectric. The machining procedure is performed to verify the feasibility of the developed system. It takes about 10 seconds to drill the ${\phi}m$100${\mu}m$ hole to the 100${\mu}m$ thickness stainless steel plate. The machining time depends on the values of the resister and the capacitor. There may exist the optimal values of time constant and the tendency is displayed In the appendix.

• Current Optics and Photonics
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• v.3 no.1
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• pp.66-71
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• 2019

Application of liquid crystal (LC) materials to a flexible device is challenging because the bending of LC displays easily causes change in thickness of the LC layer and orientation of LCs, resulting in deterioration in a displayed image quality. In this work, we demonstrate a prototype device combining a flexible polymer substrate and an optically isotropic LC-polymer composite in which the device consists of interdigitated in-plane switching electrodes deposited on a flexible colorless polyimide substrate and the composite consisting of nano-sized LC droplets in a polymer matrix. The device can keep good electro-optic characteristics even when it is in a bending state because the LC orientation is not disturbed in both voltage-off and -on states. The proposed device shows a high potential to be applicable for future flexible LC devices.

• Journal of the Korean Applied Science and Technology
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• v.35 no.4
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• pp.1338-1347
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• 2018

In this study, Ti-mesh based electrodes were fabricated for the application of anode to the electrolysis process for wastewater treatment using Pd electroless plating method. The removal performance of the prepared Pd / Ti-mesh electrode was evaluated as representative dye RO16, and the durability and performance were maximized by varying the electrode manufacturing conditions. As a result, it was confirmed that the coating condition had no significant effect on the performance, and that the heat treatment process greatly affected the performance and the durability was improved. In addition, we tried to maximize performance and durability by complexing Ir, Ru, and Ta. However, as the thickness of the layer increased due to the limitation of the coating method, the resistance increased and the performance decreased accordingly.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.1
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• pp.17-33
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• 2022

Ti₃C₂T_X MXene, first reported by Naguib et al. in 2011, has attracted tremendous attention due to its excellent hydrophilicity, electrical conductivity, and mechanical/chemical stability. Since MXene is a two-dimensional material with a thickness of few nanometers, which ensure its flexibility. In last few years, due to these properties many researchers used Ti₃C₂T_X MXene into various fields such as flexible smart sensors, energy harvesting/storage devices, supercapacitors and electromagnetic interference shielding systems. In this review article, we have briefly discussed the various synthesis processes and characteristics of Ti₃C₂T_X MXene. Moreover, we reviewed the latest development of Ti₃C₂T_X MXene as flexible electrode material to be used into different applications.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.60-64
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• 2023

In this study, the electrical contact resistance characteristics between graphene and metals, which is one of important factors for the performance of graphene-based devices, were compared. High-quality graphene was synthesized by chemical vapor deposition (CVD) method, and Al, Cu, Ni, and Ti as electrode materials were deposited on the graphene surface with equal thickness of 50 nm. The contact resistances of graphene transferred to SiO₂/Si substrates and metals were measured by the transfer length method (TLM), and the average contact resistances of Al, Cu, Ni, and Ti were found to be 345 Ω, 553 Ω, 110 Ω, and 174 Ω, respectively. It was found that Ni and Ti, which form chemical bonds with graphene, have relatively lower contact resistances compared to Al and Cu, which have physical adsorption properties. The results of this study on the electrical properties between graphene and metals are expected to contribute to the realization of high-performance graphene-based devices including electronics, optoelectronic devices, and sensors by forming low contact resistance with electrodes.

• Journal of the Korean Geotechnical Society
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• v.34 no.10
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• pp.29-38
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• 2018

The slime formed at the bottom of the borehole causes the excessive displacement and loss of the bearing capacity of the drilled shaft. In this study, the slime meter is developed for the evaluation of the slime based on the electrical properties of the fluid and the slime in the borehole. The slime meter is composed of a probe instrumented with electrodes and temperature sensor and a frame with rotary encoder, so that the slime meter profiles the electrical resistivity compensated with temperature effect along the depth. For the application of the slime meter, three field tests are conducted at a borehole with a diameter of 3 m and a depth of 46.9 m with different testing time and locations. For all the tests, the experimental results show that while electrical resistivities are constantly measured in the fluid, the electrical resistivities sharply increase at the surface of the slime. Therefore, the slime thicknesses are estimated by the differences in the depths of the slime surface and the ground excavation. The experimental results obtained at the same testing point with different testing time show that the estimated thickness of the slime increases by the elapsed time. Also, the estimated slime at the side of the borehole is thicker than that at the center of the borehole. As the slime meter estimates the slime in the borehole by measuring the electrical resistivity with simple equipment, the slime meter may be effectively used for the evaluation of the slime formed at the bottom of the borehole.