• Title/Summary/Keyword: electrode thickness

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Preparationand Characterization of Rutile-anatase Hybrid TiO2 Thin Film by Hydrothermal Synthesis

  • Kwon, Soon Jin;Song, Hoon Sub;Im, Hyo Been;Nam, Jung Eun;Kang, Jin Kyu;Hwang, Taek Sung;Yi, Kwang Bok
    • Clean Technology
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    • v.20 no.3
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    • pp.306-313
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    • 2014
  • Nanoporous $TiO_2$ films are commonly used as working electrodes in dye-sensitized solar cells (DSSCs). So far, there have been attempts to synthesize films with various $TiO_2$ nanostructures to increase the power-conversion efficiency. In this work, vertically aligned rutile $TiO_2$ nanorods were grown on fluorinated tin oxide (FTO) glass by hydrothermal synthesis, followed by deposition of an anatase $TiO_2$ film. This new method of anatase $TiO_2$ growth avoided the use of a seed layer that is usually required in hydrothermal synthesis of $TiO_2$ electrodes. The dense anatase $TiO_2$ layer was designed to behave as the electron-generating layer, while the less dense rutile nanorods acted as electron-transfer pathwaysto the FTO glass. In order to facilitate the electron transfer, the rutile phase nanorods were treated with a $TiCl_4$ solution so that the nanorods were coated with the anatase $TiO_2$ film after heat treatment. Compared to the electrode consisting of only rutile $TiO_2$, the power-conversion efficiency of the rutile-anatase hybrid $TiO_2$ electrode was found to be much higher. The total thickness of the rutile-anatase hybrid $TiO_2$ structures were around $4.5-5.0{\mu}m$, and the highest power efficiency of the cell assembled with the structured $TiO_2$ electrode was around 3.94%.

Characteristics and Fabrication of Complementary Electrochromic Device ( I ) (상보형 일렉트로크로믹 소자의 제조 및 특성 ( I ))

  • Lee, S.Y.;Seo, D.K.;Kim, Y.H.;Cho, T.Y.;Chun, H.G.
    • Journal of Sensor Science and Technology
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    • v.6 no.1
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    • pp.24-34
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    • 1997
  • In this study, two different types of complementary electrochromic devices using amorphous $WO_{3}$ films as a working electrode, $V_{2}O_{5}$ film and NiO film as counter electrodes respectively were investigated. For the devices using amorphous and crystalline $V_{2}O_{5}$ films of $100{\sim}150nm$ thickness with $ITO/WO_{3}/LiClO_{4}-PC/V_{2}O_{5}/ITO$ structure, an optical modulation of $50{\sim}60%$ were obtained at a potential range of $1{\sim}2V$. It has been shown that transmittance and reflectance of light could be electrically controlled by low applied voltage. For the devices with $ITO/WO_{3}/LiClO_{4}-PC/NiO/ITO$ structure in which NiO film was deposited by a RF reactive sputtering, the optical modulation in visible light region (${\lambda}=550nm$) and in near infrared light region (${\lambda}=850nm$) were 25% and 30%, respectively.

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Morphology Control of Nanostructured Graphene on Dielectric Nanowires

  • Kim, Byeong-Seong;Lee, Jong-Un;Son, Gi-Seok;Choe, Min-Su;Lee, Dong-Jin;Heo, Geun;Nam, In-Cheol;Hwang, Seong-U;Hwang, Dong-Mok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.375-375
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    • 2012
  • Graphene is a sp2-hybridized carbon sheet with an atomic-level thickness and a wide range of graphene applications has been intensely investigated due to its unique electrical, optical, and mechanical properties. In particular, hybrid graphene structures combined with various nanomaterials have been studied in energy- and sensor-based applications due to the high conductivity, large surface area and enhanced reactivity of the nanostructures. Conventional metal-catalytic growth method, however, makes useful applications difficult since a transfer process, used to separate graphene from the metal substrate, should be required. Recently several papers have been published on direct graphene growth on the two dimensional planar substrates, but it is necessary to explore a direct growth of hierarchical nanostructures for the future graphene applications. In this study, uniform graphene layers were successfully synthesized on highly dense dielectric nanowires (NWs) without any external catalysts. We also demonstrated that the graphene morphology on NWs can be controlled by the growth parameters, such as temperature or partial pressure in chemical vapor deposition (CVD) system. This direct growth method can be readily applied to the fabrication of nanoscale graphene electrode with designed structures because a wide range of nanostructured template is available. In addition, we believe that the direct growth growth approach and morphological control of graphene are promising for the advanced graphene applications such as super capacitors or bio-sensors.

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Electrical and Chemical Properties of ultra thin RT-MOCVD Deposited Ti-doped $Ta_2O_5$

  • Lee, S. J.;H. F. Luan;A. Mao;T. S. Jeon;Lee, C. h.;Y. Senzaki;D. Roberts;D. L. Kwong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.4
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    • pp.202-208
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    • 2001
  • In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

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Effects of Al2O3 Coating on BiVO4 and Mo-doped BiVO4 Film for Solar Water Oxidation

  • Arunachalam, Maheswari;Yun, Gun;Lee, Hyo Seok;Ahn, Kwang-Soon;Heo, Jaeyeong;Kang, Soon Hyung
    • Journal of Electrochemical Science and Technology
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    • v.10 no.4
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    • pp.424-432
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    • 2019
  • Planar BiVO4 and 3 wt% Mo-doped BiVO4 (abbreviated as Mo:BiVO4) film were prepared by the facile spin-coating method on fluorine doped SnO2(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO4 film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al2O3 layer, the ultra-thin Al2O3 layer with a thickness of approximately 2 nm was deposited on BiVO4 film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO4 and Mo:BiVO4 films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al2O3 layer, the Al2O3 coated BiVO4 (Al2O3/BiVO4) film exhibited enhanced photoelectrochemical performance in 0.5 M Na2SO4 solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as VRHE) than BiVO4 film (0.12 mA/㎠ at 1.23 VRHE). Moreover, Al2O3 coating on the Mo:BiVO4 film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 VRHE) than the Mo:BiVO4 film (0.86 mA/㎠ at 1.23 VRHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO4 film and Al2O3/Mo:BiVO4 film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (VFB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al2O3 coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al2O3 layer.

Study on Design of ZnO-Based Thin-Film Transistors With Optimal Mechanical Stability (ZnO 기반 박막트랜지스터의 기계적 안정성 확보에 관한 연구)

  • Lee, Deok-Kyu;Park, Kyung-Yea;Ahn, Jong-Hyun;Lee, Nae-Eung;Kim, Youn-Jea
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.35 no.1
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    • pp.17-22
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    • 2011
  • ZnO-based thin-film transistors (TFTs) have been fabricated and the mechanical characteristics of electric circuits, such as stress, strain, and deformation are analyzed by the finite element method (FEM). In this study, a mechanical-stability design guide for such systems is proposed; this design takes into account the stress and deformation of the bridge to estimate the stress distribution in an $SiO_2$ film with 0 to 5% stretched on 0.5-${\mu}m$-thick. The predicted buckle amplitude of $SiO_2$ bridges agrees well with experimental results within 0.5% error. The stress and strain at the contact point between bridges and a pad were measured in a previous structural analysis. These structural analysis suggest that the numerical measurement of deformation, SU-8 coating thickness for Neutral Mechanical Plane (NMP) and ITO electrode size on a dielectric layer was useful in enhancing the structural and electrical stabilities.

Characteristics and Fabrication of Thermal Oxidized-SnO2 (SnO2 열산화감지막의 제작 및 특성)

  • Kang, Bong-Hwi;Lee, Duk-Dong
    • Journal of Sensor Science and Technology
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    • v.11 no.6
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    • pp.342-349
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    • 2002
  • New formation technique of metal oxide sensing film was proposed m this paper. Silicon wafer with Pt electrodes was used as a substrate for depositing metal Sn film. Metal Sn was deposited in the state of not continuous film but only island state. The samples were prepared to obtain the optimal condition of metal Sn deposition. The resistances of deposited Sn onto Pt electrodes amounted to $1\;k{\Omega}$, $5\;k{\Omega}$, $10\;k{\Omega}$ and $50\;k{\Omega}$, respectively. Also The sample with $1,500\;{\AA}$ thickness of Sn was prepared m order to compare sensing properties between conventional type and proposing type. After deposition of metal Sn, $SnO_2$ was formed by thermal oxidation method for 3 hrs. in $O_2$ ambient at $700^{\circ}C$. Surface morphology, crystal structure and surface roughness of oxidized-sensing film were examined by SEM, XRD, and AFM, respectively. From the results of these analyses, the optimal deposition condition of Sn was that the Pt electrode resistance became $10\;k{\Omega}(300\;{\AA})$. Also, the sensing characteristics of fabricated sensing film for various concentrations of butane, propane and carbon monoxide gases were measured at he operating temperatures of $250^{\circ}C$, $300^{\circ}C$ and $350^{\circ}C$, respectively. Although catalyst as not added to the sensing film, it has exhibited the high sensitivity to all the test gases.

Pallidotomy Guided by MRI and Microrecording for Parkinson's Disease (파킨슨환자의 자기공명영상과 미세전극기록을 이용한 담창구 파괴술)

  • Lee, Kyung Jin;Son, Hyung Sun;Park, Sung Chan;Cho, Kyung Keun;Park, Hae Kwan;Choi, Chang Rak
    • Journal of Korean Neurosurgical Society
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    • v.30 no.1
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    • pp.41-46
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    • 2001
  • Objective : The exact position of the lesion during the pallidotomy is critical to obtain the clinical improvement of parkinson's disease without damage to surrounding structure. Ventriculogrphy, CT(computed tomograpy) or MRI(magnetic resonance imaging) have been used to determine the initial coordinates of stereotactic target for pallidotomy. The goal of this study was to determine whether microelectrode recording significantly improves the neurophysiologic localization of the target obtained from MRI. Methods : Twenty patients were studied. They underwent a unilateral pallidotomy. Leksell frame was applied and T1 axial images parallel to the AC-PC(anterior commissure-posterior commissure) plane using a 1.5 Tesla MRI with 3mm slice thickness were obtained. Anteroposterior coordinate of target was chosen at 2mm in front of the midcommissural point and lateral coordinate between 19 and 22mm from the midline. The vertical coordinate was calculated on coronal slice using a fast spin echo inversion recovery sequence(FSEIR) related to the position of the choroidal fissure and ranged over 4-5mm below the AC-PC plane. Confirmation of the anatomical target was done on axial slices using the same FSEIR sequence . Microrecording was done at the pallidum contralateral to the symptomatic side using an electrode with a tip diameter of $1{{\mu}m}$ diameter tip and 1.1-1.4 mOhm impedance at 1000Hz. Electrophysiologic localization of the target was also confirmed intraoperatively by macrostimulation. Results : Microrecording techniques were reliable to define the transition from the base of the pallidum which was characterized by the disappearance of spike activity and by the change of the audible background activity. Signals from high amplitude neurons firing at 200-400Hz were recorded in the pallidal base. X, Y and Z coordinates of target obtained from the MRI were within 1mm from the X, Y, Z coordinates obtained with microrecording in 16 patients (80%), 15 patients(75%), 10 patients(50%) respectively. The difference of Y coordinate between on MRI and on microrecording was 4mm in only one patient. Conclusion : The MRI was accurate to localize the target within 1mm of the error from microrecording target in 70% of the patients. 4mm discrepancy was observed only once. We conclude that MRI alone can be used to determine the target for pallidotomy in most patients. However, microrecording technique can still be extremely valuable in patents with aberrant anatomy or unusual MRI coordinates. We also consider physiologic confirmation of the target using macrostimulation to be mandatory in all cases.

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Robust 1D inversion of large towed geo-electric array datasets used for hydrogeological studies (수리지질학 연구에 이용되는 대규모 끄는 방식 전기비저항 배열 자료의 1 차원 강력한 역산)

  • Allen, David;Merrick, Noel
    • Geophysics and Geophysical Exploration
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    • v.10 no.1
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    • pp.50-59
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    • 2007
  • The advent of towed geo-electrical array surveying on water and land has resulted in datasets of magnitude approaching that of airborne electromagnetic surveying and most suited to 1D inversion. Robustness and complete automation is essential if processing and reliable interpretation of such data is to be viable. Sharp boundaries such as river beds and the top of saline aquifers must be resolved so use of smoothness constraints must be minimised. Suitable inversion algorithms must intelligently handle low signal-to-noise ratio data if conductive basement, that attenuates signal, is not to be misrepresented. A noise-level aware inversion algorithm that operates with one elastic thickness layer per electrode configuration has been coded. The noise-level aware inversion identifies if conductive basement has attenuated signal levels so that they are below noise level, and models conductive basement where appropriate. Layers in the initial models are distributed to span the effective depths of each of the geo-electric array quadrupoles. The algorithm works optimally on data collected using geo-electric arrays with an approximately exponential distribution of quadrupole effective depths. Inversion of data from arrays with linear electrodes, used to reduce contact resistance, and capacitive-line antennae is plausible. This paper demonstrates the effectiveness of the algorithm using theoretical examples and an example from a salt interception scheme on the Murray River, Australia.

Quasi-monochromatic Parallel Radiography Achieved with a Polycapillary Plate

  • Sato, Eiichi;Komatsu, Makoto;Hayasi, Yasuomi;Tanaka, Etsuro;Mori, Hidezo;Kawai, Toshiaki;Ichimaru, Toshio;Takayama, Kazuyoshi;Ido, Hideaki
    • Proceedings of the Korean Society of Medical Physics Conference
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    • 2002.09a
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    • pp.418-421
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    • 2002
  • Fundamental study on quasi-monochromatic parallel radiography using a polycapillary plate and a plane-focus x-ray tube is described. The x-ray generator consists of a negative high-voltage power supply, a filament (hot cathode) power supply, and an x-ray tube. The negative high-voltage is applied to the cathode electrode, and the transmission type target (anode) is connected to the ground potential. The maximum voltage and current of the power supply were -100 kV (peak value) and 3.0 mA, respectively. In this experiment, the tube voltage was regulated from 20 to 25 kV, and the tube current was regulated by the filament temperature and ranged from 1.0 to 3.0 mA. The exposure time is controlled in order to obtain optimum film density, and the focal spot diameter was about 10 mm. The polycapillary plate is J5022-21 made by Hamamatsu Photonics Inc., and the outside and effective diameters are 87 and 77 mm, respectively. The thickness and the hole diameter of the polycapillary are 1.0 mm and 25 ${\mu}$m, respectively. The x-rays from the tube are formed into parallel beam by the polycapillary, and the radiogram is taken using an industrial x-ray film of Fuji IX 100 without using a screen. In the measurement of image resolution, we employed three brass spacers of 2, 30, and 60 mm in height. By the test chart, the resolution fell according to increases in the spacer height without using a polycapillary. In contrast, the resolution slightly fell with corresponding increases in the height by the polycapillary. In angiography, fine blood vessels of about 100 ${\mu}$m are clearly visible.

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